UTC MJE13003DL-T60-K High voltage fast-switching npn power transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MJE13003D
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
„
DESCRIPTION
The UTC MJE13003D is a NPN Power Transistor. It is
intended to be used in applications requiring medium voltage
capability and high switching speeds.
FEATURES
„
* Fast-Switching And High Voltage Capability
* Dynamic Parameters With Low Spread
* High Reliability
* Integrated Antiparallel Collector-Emitter Diode
„
INTERNAL SCHEMATIC DIAGRAM
C (2)
B (1)
E (3)
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13003DL-T60-K
MJE13003DG-T60-K
MJE13003DL-T92-B
MJE13003DG-T92-B
MJE13003DL-T92-K
MJE13003DG-T92-K
MJE13003DL-T92-R
MJE13003DG-T92-R
MJE13003DL-TA3-T
MJE13003DG-TA3-T
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-126
TO-92
TO-92
TO-92
TO-220
1
B
B
B
B
B
Pin Assignment
2
C
C
C
C
C
3
E
E
E
E
E
Packing
Bulk
Tape Box
Bulk
Tape Reel
Tube
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MJE13003D
„
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector- Emitter Voltage (VBE =0)
VCES
700
V
Collector-Emitter Voltage (IB =0)
VCEO
400
V
Emitter-Base Voltage (IC=0, IB=0.75A, tP<10μS)
VEBO
9
V
Collector Current
IC
1.5
A
Collector Peak Current (tP<5ms)
ICM
3
A
Base Current
IB
0.75
A
Base Peak Current (tP<5ms)
IBM
1.5
A
TO-126
40
Power Dissipation (TC=25°C)
TO-92
PD
30
W
TO-220
70
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage (Note)
Collector Cut-Off Current
SYMBOL
BVEBO
VCEO(SUS)
ICES
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
Base-Emitter Saturation Voltage (Note)
VBE(SAT)
hFE
DC Current Gain
Resistive Load
Rise Time
Storage Time
Fall Time
Inductive Load Storage Time
tR
tS
tF
tS
VF
Diode Forward Voltage
Note: Pulse Test: Pulse duration≤300μs, Duty cycle≤2 %
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
IE =10mA, IC=0
IC=10mA, IB=0
VCE =700V,VBE =0
IC=0.5 A, IB=0.1 A
IC=1 A, IB=0.25 A
IC=1.5 A, IB=0.5 A
IC=0.5 A, IB=0.1 A
IC=1 A, IB=0.25 A
IC=0.5A, VCE =5 V
IC=1 A, VCE =5 V
VCC=125 V, IC=1 A,
IB1=0.2 A, IB2=-0.2 A
tP=25μs
IC=1 A, IB1=0.2 A,VBE =-5 V,
L=50mH, VCLAMP=300V
IF=0.5 A
MIN
9
400
8
5
TYP MAX UNIT
18
V
V
1
mA
0.5
V
1
V
3
V
1
V
1.2
V
51
30
1
μs
4
μs
0.7
μs
0.8
μs
1.5
V
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Preliminary
NPN SILICON TRANSISTOR
TEST CIRCURTS
Inductive Load Switching Test Circuit
(3)
IC
(1)
IB
VCE
RBB(2)
VBB
VClamp
+
VCC
Notes: 1. Fast Electronic Switch
2. Non-Inductive Resistor
3. Fast Recovery Rectifier
Resistive Load Switching Test Circuit
IC
(1)
RC(2)
IB
VCE
RBB(2)
VBB
+
VCC
Notes: 1. Fast Electronic Switch
2. Non-Inductive Resistor
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJE13003D
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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