DMN90H2D2HCTI N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Features BVDSS (@ TJ Max) (Note 7) RDS(ON) ID TC = +25°C 1000V 2.2Ω@VGS = 10V 6A Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Mechanical Data Applications Motor Control Backlighting DC-DC Converters Power Management Functions Case: ITO220AB (Type TH) Case Material: Molded Plastic, “Green” Molding Compound, UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 1.85 grams (Approximate) ITO220AB (Type TH) Bottom View Top View Equivalent Circuit Top View Pin Out Configuration Ordering Information (Note 4) Part Number DMN90H2D2HCTI Notes: Case ITO220AB (Type TH) Packaging 50 Pieces/Tube 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 90H2D2H =Manufacturer’s Marking 90H2D2H = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 16 = 2016) WW or WW= Week Code (01 to 53) YYWW DMN90H2D2HCTI Document number: DS38826 Rev. 4 - 2 1 of 7 www.diodes.com September 2016 © Diodes Incorporated DMN90H2D2HCTI ADVANCED INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Notes 5) VGS = 10V (Note 6) Pulsed Drain Current Avalanche Current, L = 60mH (Note 7) Avalanche Energy, L = 60mH (Note 7) Symbol VDSS VGSS TC = +25°C TC = +100°C Value 900 ±30 6 4 24 3.5 360 ID IDM IAS EAS Unit V V A A A mJ Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Symbol TC = +25°C TC = +100°C TC = +25°C Unit PD Max 40 14 RθJC TJ, TSTG 3.6 -55 to +150 °C/W °C W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 900 1 VGS = 0V, ID = 250µA IDSS V Zero Gate Voltage Drain Current µA VDS = 900V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage IGSS 100 nA VGS = ±30V, VDS = 0V Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance VGS(TH) 3 4 5 V VDS = VGS, ID = 250µA RDS(ON) 2.2 1.2 Ω V VGS = 10V, ID = 3A VSD 1.7 0.85 Ciss Coss Crss 1487 113 1 pF 4.7 VDS = 25V, f = 1MHz, VGS = 0V Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 720V, ID = 6A, VGS = 10V ns VDD = 450V, VGS = 10V, Rg = 25Ω, ID = 6A ns µC IF = 6A, dI/dt = 100A/μs Gate Resistance Rg Total Gate Charge Qg 20.3 Gate-Source Charge Gate-Drain Charge Qgs 6.4 Qgd Turn-On Delay Time tD(ON) 6.1 39 Turn-On Rise Time tR 49 Turn-Off Delay Time tD(OFF) 51 Reverse Transfer Capacitance Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VGS = 0V, IS = 6A tF 31 tRR 607 QRR 8.1 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Drain current limited by maximum junction temperature. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. DMN90H2D2HCTI Document number: DS38826 Rev. 4 - 2 2 of 7 www.diodes.com September 2016 © Diodes Incorporated DMN90H2D2HCTI 2 5.0 VGS = 7.0V VGS = 8.0V 3.5 VGS = 10.0V VGS = 6.0V 3.0 2.5 2.0 1.5 VGS = 5.5V 0.5 VDS = 10V 1.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 4.0 1.0 1.6 1.4 1.2 1 0.8 125℃ 0.6 85℃ 0.4 VGS = 5.0V 150℃ 0.2 0.0 -55℃ 2 4 6 8 VDS, DRAIN-SOURCE VOLTAGE (V) 10 0 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 8 Figure 2. Typical Transfer Characteristic 7 3 2.5 2 VGS = 10V 1.5 1 0.5 0 0 1 2 3 4 5 6 7 8 ID, DRAIN-SOURCE CURRENT Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 3 VGS = 10V,ID = 3A 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 5. On-Resistance Variation with Junction Temperature DMN90H2D2HCTI Document number: DS38826 Rev. 4 - 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 25℃ 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCED INFORMATION 4.5 6 5 4 3 2 ID = 3A 1 0 0 5 10 15 20 25 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 30 6 5 4 3 2 1 VGS = 10V, ID = 3A 0 150 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature September 2016 © Diodes Incorporated 4.5 5 Is, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 5 6 4 VGS = 10V, ID = 0.6A 3 2 1 3.5 3 2.5 2 TJ = 85oC 1.5 TJ = 125oC 1 0 TJ = 25oC TJ = 150oC TJ = -55oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. Gate Threshold Variation vs. Junction Temperature 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8. Diode Forward Voltage vs. Current 10 100000 150℃ 8 10000 1000 125℃ 100 6 VGS (V) IDSS, LEAKAGE CURRENT (nA) VGS = 0V 4 0.5 -50 VDS = 720V, ID = 6A 4 85℃ 25℃ 10 2 1 0 0 0 100 200 300 400 500 600 700 800 900 VDS, Drain-SOURCE VOLTAGE (V) Figure 9. Typical Drain-Source Leakage Current vs. Voltage 10000 2 4 6 8 10 12 14 16 18 Qg (nC) Figure 10. Gate Charge 20 22 100 f=1MHz RDS(ON) Limited Ciss PW =1µs 1000 ID, DRAIN CURRENT (A) CT, JUNCTION CAPACITANCE (pF) ADVANCED INFORMATION DMN90H2D2HCTI 100 Coss 10 1 10 1 PW =10µs PW =100µs 0.1 TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS= 10V Crss 0 0.01 0 20 40 60 80 100 120 140 160 180 200 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance DMN90H2D2HCTI Document number: DS38826 Rev. 4 - 2 1 PW =1ms PW =10ms PW =100ms PW =1s 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 1000 Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com September 2016 © Diodes Incorporated DMN90H2D2HCTI r(t), TRANSIENT THERMAL RESISTANCE ADVANCED INFORMATION 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t) = r(t) * RθJC RθJC = 5℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-06 DMN90H2D2HCTI Document number: DS38826 Rev. 4 - 2 1E-05 0.0001 0.001 0.01 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7 www.diodes.com 0.1 1 10 September 2016 © Diodes Incorporated DMN90H2D2HCTI Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCED INFORMATION ITO220AB (Type TH) E A A1 Q5 Q1 Q4 H1 Aa Q Ab 02 D Da Ea 01(4x) b2 L1 b2a A2 b L C e E1 01 K1 Ea DMN90H2D2HCTI Document number: DS38826 Rev. 4 - 2 01 6 of 7 www.diodes.com Q5 ITO220AB (Type TH) Dim Min Max Typ A 4.50 4.90 4.70 A1 2.34 2.74 2.54 A2 2.63 2.89 2.76 Q1 1.00 REF Q3 Aa Ab 0.30 0.60 0.56 b 0.75 0.90 0.80 b2 1.23 1.38 1.28 Q2 b2a 1.25 1.45 1.35 c 0.45 0.60 0.50 D 15.47 16.27 15.87 Da 7.55 8.05 7.80 e 2.54 BSC E 9.86 10.46 10.16 E1 9.26 9.66 9.46 Ea 7.70 8.30 8.00 Eb 9.76 10.34 10.04 H1 6.70 REF L 12.58 13.38 12.98 L1 2.81 3.05 2.93 K1 0.65 0.75 0.70 Q 9.40 REF Q1 1.00 2.00 1.50 Q2 13.50 14.30 13.90 Q3 3.15 3.45 3.30 Q4 5.15 5.65 5.40 Q5 6.70 7.30 7.00 ØP 3.06 3.40 3.18 ØP1 1.40 1.60 1.50 ØP2 0.95 1.05 1.00 ØP3 3.30 3.60 3.45 θ1 3º 7º 5º θ2 45º R 0.50 REF DEP 0.05 0.15 0.10 All Dimensions in mm September 2016 © Diodes Incorporated DMN90H2D2HCTI IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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