BVDSS = 100 V RDS(on) typ = 30 mΩ HRLD370N10K / HRLU370N10K ID = 25 A 100V N-Channel Trench MOSFET D-PAK FEATURES I-PAK 2 Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 53 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 mΩ (Typ.) @VGS=10V 1 1 2 3 3 HRLD370N10K HRLU370N10K 1.Gate 2. Drain 3. Source Lower RDS(ON) : 33 mΩ (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25℃ unless otherwise specified Parameter Drain-Source Voltage Value Units 100 V Drain Current – Continuous (TC = 25℃) 25 * A Drain Current – Continuous (TC = 100℃) 17.5 * A IDM Drain Current – Pulsed 88 * A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) 80 mJ EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ Power Dissipation (TA = 25℃)* 3 W PD Power Dissipation (TC = 25℃) - Derate above 25℃ 48 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ID (Note 1) 0.32 W/℃ -55 to +175 ℃ 300 ℃ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case -- 3.1 RθJA Junction-to-Ambient* -- 50 RθJA Junction-to-Ambient -- 110 Units ℃/W * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,December 2014 HRLD370N10K_HRLU370N10K December 2014 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 1.0 -- 2.4 V Static Drain-Source On-Resistance VGS = 10 V, ID = 12 A -- 30 37 mΩ VGS = 4.5 V, ID = 10 A -- 33 42 mΩ Forward Transconductance VDS = 15, ID = 12 A -- 60 -- S VGS = 0 V, ID = 250 ㎂ 100 -- -- V VDS = 80 V, VGS = 0 V -- -- 1 ㎂ VDS = 80 V, TJ = 125℃ -- -- 100 ㎂ VGS = ±20 V, VDS = 0 V -- -- ±100 ㎁ -- 2500 -- ㎊ -- 140 -- ㎊ -- 100 -- ㎊ -- 1.4 -- Ω -- 24 -- ㎱ -- 20 -- ㎱ -- 135 -- ㎱ -- 25 -- ㎱ -- 53 -- nC -- 7 -- nC -- 13 -- nC Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 50 V, ID = 12 A, RG = 6 Ω VDS = 80 V, ID = 12 A, VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 25 ISM Pulsed Source-Drain Diode Forward Current -- -- 88 VSD Source-Drain Diode Forward Voltage IS = 12 A, VGS = 0 V -- -- 1.1 V trr Reverse Recovery Time -- 50 -- ㎱ Qrr Reverse Recovery Charge IS = 12 A, VGS = 0 V diF/dt = 100 A/μs -- 70 -- nC A Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=11A, VDD=25V, RG=25Ω, Starting TJ =25°C ◎ SEMIHOW REV.A0,December 2014 HRLD370N10K_HRLU370N10K Electrical Characteristics TJ=25 °C 100 VGS Top : 15 V 10 V 8V 7V 6V 5V 4V 3.5 V Bottom : 3 V ID, Drain Current [A] ID, Drain Current [A] 102 101 * Notes : 1. 300us Pulse Test 2. TC = 25oC 10 175oC 25oC 1 * Notes : 1. VDS= 15V 2. 300us Pulse Test 0.1 100 0 101 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 200 160 120 VGS = 4.5V 80 VGS = 10V 40 10 175oC 25oC 1 * Notes : 1. VGS= 0V 2. 300us Pulse Test ∗ Note : TJ = 25oC 0 0 20 40 60 80 100 0.1 0.0 0.4 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 2000 1500 * Note ; 1. VGS = 0 V 2. f = 1 MHz 1000 Coss 500 1.6 10 8 6 4 2 VDS = 80V ID = 12A Crss 0 10-1 2.0 12 VGS, Gate-Source Voltage [V] Capacitances [pF] 3000 1.2 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 3500 0.8 VSD, Source-Drain Voltage [V] ID, Drain Current [A] 100 101 0 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 60 ◎ SEMIHOW REV.A0,December 2014 HRLD370N10K_HRLU370N10K Typical Characteristics (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 ∗ Note : 1. VGS = 0 V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 12 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 25 Operation in This Area is Limited by R DS(on) 2 10 20 ID, Drain Current [A] 1 ms 10 ms 101 DC 100 * Notes : 1. TC = 25 oC 15 10 5 2. TJ = 175 oC 3. Single Pulse 10-1 10-1 100 101 0 25 102 50 75 100 125 150 175 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area ZθJC(t), Thermal Response ID, Drain Current [A] 100 µs Figure 10. Maximum Drain Current vs Case Temperature D=0.5 * Notes : 1. ZθJC(t) = 3.1 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 100 0.2 0.1 0.05 0.02 0.01 10-1 -5 10 PDM t1 single pulse -4 10 -3 10 -2 10 -1 10 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,December 2014 HRLD370N10K_HRLU370N10K Typical Characteristics HRLD370N10K_HRLU370N10K Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,December 2014 HRLD370N10K_HRLU370N10K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,December 2014 HRLD370N10K_HRLU370N10K Package Dimension TO-252 (Ass’y GZSM) ◎ SEMIHOW REV.A0,December 2014 HRLD370N10K_HRLU370N10K Package Dimension TO-251 (Ass’y GZSM) ◎ SEMIHOW REV.A0,December 2014 HRLD370N10K_HRLU370N10K Package Dimension TO-251 (Ass’y CLD) ◎ SEMIHOW REV.A0,December 2014