HMC943ALP5DE v11.0518 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 34 GHz Typical Applications Features The HMC943ALP5DE is ideal for: Saturated Output Power: +33 dBm @ 23% PAE • Point-to-Point Radios High Output IP3: +41 dBm • Point-to-Multi-Point Radios High Gain: 23 dB • VSAT DC Supply: +5.5V @ 1300 mA • Military & Space No External Matching Required 32 Lead 5 x 5 mm SMT Package: 25 mm² Functional Diagram General Description The HMC943ALP5DE is a four stage pHEMT MMIC 1.5 Watt Power Amplifier which operates between 24 and 34 GHz. The HMC943ALP5DE provides 23 dB of gain, and +33 dBm of saturated output power and 23% PAE from a +5.5V supply. The high output IP3 of +41 dBm makes the HMC943ALP5DE ideal for microwave radio applications. A power Detector output is also available The HMC943ALP5DE amplifier I/Os are internally matched to 50 Ohms and is packaged in a leadless QFN 5 x 5 mm surface mount package and requires no external matching components. Electrical Specifications, TA = +25° C, Vd1 - Vd8 = +5.5V, Idd = 1300 mA [1] Parameter Min. Frequency Range Gain 20 Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Typ. Max. Min. 24 - 26.5 23 Max. Min. 19.5 19.5 Max. Units GHz 22.5 dB 0.04 0.044 dB/ °C 10 9 8 dB 32 22.5 Typ. 31.5 - 34 0.032 12 29 Typ. 26.5 - 31.5 10 28 31 29 13 dB 32 dBm 33 32 32.5 dBm Output Third Order Intercept (IP3)[2] 41.5 37 36 dBm Total Supply Current (Idd) 1300 1300 1300 mA [1] Adjust VG1 or VG2 between -2 to 0V to achieve Idd = 1300 mA typical. [2] Measurement taken at +5.5V @ 1300 mA, Pout / Tone = +22 dBm 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC943ALP5DE v11.0518 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 34 GHz 30 20 26 10 0 18 14 -10 10 -20 20 22 24 26 28 30 32 FREQUENCY (GHz) S21 34 36 23 38 24 25 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) S11 +25 C S22 +85 C -40 C Output Return Loss vs. Temperature Input Return Loss vs. Temperature 0 0 -4 -4 RETURN LOSS (dB) RETURN LOSS (dB) 22 -8 -12 -8 -12 -16 -16 -20 -20 23 24 25 26 27 28 29 30 31 32 33 23 34 24 25 26 FREQUENCY (GHz) +25 C +85 C +25 C -40 C P1dB vs. Temperature 27 28 29 30 FREQUENCY (GHz) 31 32 +85 C 33 34 Amplifiers - Linear & Power - SMT Gain vs. Temperature 30 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss vs. Frequency -40 C P1dB vs. Supply Voltage (Idd) 36 38 34 36 34 32 P1dB (dBm) P1dB (dBm) 38 30 28 26 32 30 28 26 24 24 22 22 20 20 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) +25 C +85 C 34 24 25 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) +5.0V +5.5V +6.0V -40 C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2 HMC943ALP5DE v11.0518 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 34 GHz P1dB vs. Supply Current (Idd) Psat vs. Temparature 38 38 36 34 Psat (dBm) P1dB (dBm) 34 32 30 28 32 30 28 26 26 24 24 22 22 20 20 24 25 26 27 28 29 30 31 32 33 34 24 25 26 27 FREQUENCY (GHz) 1200 mA 1300 mA 29 Psat vs. Supply Voltage 31 32 33 34 +85 C -40 C Psat vs. Supply Current 38 36 36 34 34 32 32 Psat (dBm) 38 30 28 30 28 26 26 24 24 22 22 20 20 24 25 26 27 28 29 30 31 FREQUENCY (GHz) +5.0V 32 +5.5V 33 24 34 25 26 27 28 29 30 31 FREQUENCY (GHz) 1200 mA +6.0V 32 1300 mA 33 34 1400 mA Output IP3 vs. Supply Current, Pout/Tone = +22 dBm 50 50 45 45 40 40 IP3 (dBm) IP3 (dBm) 30 1400 mA Output IP3 vs. Temperature, Pout/Tone = +22 dBm 35 30 35 30 25 25 20 20 15 15 24 25 26 27 28 29 30 31 32 33 34 24 25 26 27 +25 C +85 C 28 29 30 31 32 33 34 FREQUENCY (GHz) FREQUENCY (GHz) 3 28 FREQUENCY (GHz) +25 C Psat (dBm) Amplifiers - Linear & Power - SMT 36 -40 C 1200mA 1300mA 1400 mA For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC943ALP5DE v11.0518 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 34 GHz 60 45 50 40 40 35 30 30 20 25 10 20 0 15 15 24 25 26 27 28 29 30 31 32 33 16 17 21 22 23 24 25 28 GHz 30 GHz 34 GHz +6.0V Output IM3 @ Vdd = +6V 60 60 50 50 40 40 IM3 (dBc) IM3 (dBc) 20 24 GHz 26 GHz +5.5V Output IM3 @ Vdd = +5.5V 30 30 20 20 10 10 0 0 15 16 17 18 19 20 21 22 23 24 15 25 16 17 18 19 20 21 22 23 24 25 Pout/TONE (dBm) Pout/TONE (dBm) 24 GHz 26 GHz 28 GHz 30 GHz 24 GHz 26 GHz 34 GHz 28 GHz 30 GHz 34 GHz Power Compression @ 29 GHz Power Compression @ 24 GHz 36 1775 32 1550 32 1700 28 1500 28 1625 24 1450 24 1550 20 1400 20 1475 16 1350 16 1400 12 1300 12 1325 8 1250 8 1250 4 1200 4 1175 0 1150 0 2 4 6 8 10 12 14 Pout(dBm), GAIN(dB), PAE(%) 1600 1100 0 0 2 INPUT POWER (dBm) Pout Gain Idd (mA) 36 Idd (mA) Pout(dBm), GAIN(dB), PAE(%) 19 Pout/TONE (dBm) FREQUENCY (GHz) +5.0V 18 34 Amplifiers - Linear & Power - SMT Output IM3 @ Vdd = +5V 50 IM3 (dBc) IP3 (dBm) Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm 4 6 8 10 12 INPUT POWER (dBm) PAE Idd Pout Gain PAE Idd For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 4 HMC943ALP5DE v11.0518 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 34 GHz Reverse Isolation 1850 32 1775 28 1700 24 1625 20 1550 16 1475 12 1400 8 1325 4 1250 -60 0 1175 -70 0 2 4 6 8 10 -10 ISOLATION (dB) Pout(dBm), GAIN(dB), PAE(%) 0 36 Idd (mA) -20 -30 -40 -50 27 12 28 29 INPUT POWER (dBm) Pout Gain PAE 31 Gain & Power vs. Supply Current @ 26 GHz 33 34 +85 C -40 C Gain & Power vs. Supply Voltage @ 26 GHz 38 Gain (dB), P1dB (dBm), Psat (dBm) 38 36 34 32 30 28 26 24 22 36 34 32 30 28 26 24 22 20 20 1100 1200 Gain 1300 5 1400 5.5 6 Vdd (V) P1dB Gain Psat Gain & Power vs. Supply Current @ 32 GHz P1dB Psat Gain & Power vs. Supply Voltage @ 32 GHz 38 Gain (dB), P1dB (dBm), Psat (dBm) 38 Gain (dB), P1dB (dBm), Psat (dBm) 32 Idd Idd (mA) 36 34 32 30 28 26 24 22 36 34 32 30 28 26 24 22 20 20 1100 1200 1300 1400 5 5.5 Idd (mA) Gain 5 30 FREQUENCY (GHz) +25 C Gain (dB), P1dB (dBm), Psat (dBm) Amplifiers - Linear & Power - SMT Power Compression @ 34 GHz P1dB 6 Vdd (V) Psat Gain P1dB Psat For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC943ALP5DE v11.0518 Detector Voltage vs. Output Power at Various Temparatures - 24 GHz Detector Voltage vs. Output Power at Various Frequencies 10 Vref-Vdet (V) Vref-Vdet (V) 10 1 0.1 1 0.1 10 16 22 28 34 40 10 16 24 GHz 29 GHz +25 C 34 GHz Detector Voltage vs. Output Power at Various Temparatures - 29 GHz 34 40 +85 C -40 C 10 Vref-Vdet (V) Vref-Vdet (V) 28 Detector Voltage vs. Output Power at Various Temparatures - 34 GHz 10 1 0.1 22 OUTPUT POWER (dBm) OUTPUT POWER (dBm) 1 0.1 10 16 22 28 34 40 10 16 +85 C 28 34 40 OUTPUT POWER (dBm) OUTPUT POWER (dBm) +25 C 22 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 34 GHz -40 C +25 C +85 C -40 C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 6 HMC943ALP5DE v11.0518 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 34 GHz Idd vs. Vgg1, Representative of a Typical Device 1550 0.2 1400 0 1250 -0.2 1100 IDD (mA) -0.4 Igg1 (mA) -0.6 -0.8 24 GHz 26 GHz 28 GHz 30 GHz 32 GHz 34 GHz -1 -1.2 800 650 350 -1.4 200 -1.6 50 -1.8 0 3 6 9 12 -100 15 -2 INPUT POWER (dBm) -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 Vgg1 (V) Power Dissipation @ 5.5V, 1300 mA 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 INPUT POWER (dBm) Max Pdis @ 85C 24GHz 26GHz 7 950 500 POWER DISSIPATION (W) Amplifiers - Linear & Power - SMT Igg1 vs. Input Power 27GHz 28GHz 29GHz 8 9 10 11 30GHz 31GHz 34GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC943ALP5DE v11.0518 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 34 GHz Junction Temperature to Maintain minimum 1 Million Hour MTTF 175 °C Nominal Junction Temperature (T=85 °C, Vdd = 5.5 V) 146 °C 260 °C Thermal Resistance (channel to ground paddle) 8.6 °C/W Class 0B, 150V Operating Temperature -40 to +85 °C Drain Bias Voltage (Vd) +6.5V RF Input Power (RFIN) +20 dBm Continuous Pdiss (T= 85 °C) (derate 117 mW/°C above 85 °C) 10.5 W Storage Temperature -40 to +125 °C Max Peak Reflow Temperature ESD Sensitivity (HBM) Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only, functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 32-Lead Lead Frame Chip Scale Package, Premolded Cavity [LFCSP_CAV] 5 x 5 mm Body and 1.35 mm Package Height (CG-32-1) Dimensions shown in millimeters Outline Drawing 0 -10 DETAIL A (JEDEC 95) 5.10 5.00 SQ 4.90 -30 PIN 1 INDICATOR -40 0.30 0.25 0.18 24 3.15 3.00 SQ 2.85 EXPOSED PAD 4.81 REF SQ -70 (SEE DETAIL A) 1 0.50 BSC -60 PIN 1 INDICATOR AREA OPTIONS 32 25 -50 -80 28 29 30 31 32 33 34 +25 C +85 C 6° BSC 8 17 FREQUENCY (GHz) 0.55 0.50 0.35 TOP VIEW -40 C 16 BOTTOM VIEW 1.53 1.35 1.15 COPLANARITY 0.08 SIDE VIEW SEATING PLANE 9 0.50 MIN 3.50 REF FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. 01-25-2017-A 27 PKG-004844 ISOLATION (dB) -20 Amplifiers - Linear & Power - SMT Reliability Information Absolute Maximum Ratings 32-Lead Lead Frame Chip Scale Package, Premolded Cavity [LFCSP_CAV] 5 mm × 5 mm and 1.35 mm Package Height (CG-32-1) Dimensions shown in millimeters. ORDERING GUIDE Model Temperature Range MSL Rating Package Description Package Option Package Marking [1] HMC943ALP5DE −40°C to +85°C MSL3 [2] 32-Lead LFCSP_CAV CG-32-1 H943A XXXX [1] 4 - Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 8 HMC943ALP5DE v11.0518 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 34 GHz 9 Pin Descriptions Pin Number Function Description 1, 3, 5, 8, 9, 16, 17, 20, 22, 24, 25, 32 GND These pins and package bottom must be connected to RF/DC ground. 2, 6, 7, 14, 23, 27 N/C These pins are not connected internally;however, all data shown herein was measured with these pins connected to RF/DC ground externally. 4 RFIN RF signal input. This pad is AC coupled and matched to 50 Ohms over the operating frequency range. 18 VREF Reference diode used for temperature compensation of VDET RF output power measurements. Used in combination with VDET, this voltage provides temperature compensation to VDET RF output power measurements. See Figure B for the VREF interface schematic.. VDET Detector diode used for measurement of the RF output power. Detection via this pin requires the application of a DC bias voltage through an external series resistor. Used in combination with VREF, the difference voltage VREF-VDET is a temperature compensated DC voltage proportional to the RF output power. See Figure A for the VDET interface schematic. 19 Interface Schematic VDET Gate control for amplifier. External bypass capacitors of 100 pF, 0.01 µF, and 4.7 µF are required on each. 10, 31 VG1, VG2 NOTE: VG1 & VG2 are internally connected. So external bias can be applied to either VG1 or VG2 11 - 13, 15, 26, 28 - 30 VD2, VD4, VD6, VD8, VD7, VD5, VD3, VD1 Drain bias for the amplifier. External bypass capacitors of 100 pF, 0.01 µF, and 4.7 µF are required on each. 21 RFOUT RF signal output. This pad is AC coupled and matched to 50 ohms over the operating frequency range. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC943ALP5DE v11.0518 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 34 GHz Application Circuit N C28 4.7UF GND C18 10000PF GND C8 100PF GND VD5 VD1 P N C29 4.7UF GND C19 10000PF GND C9 100PF C7 100PF GND C17 10000PF GND C27 4.7UF GND N N P C20 10000PF GND C10 100PF C6 100PF GND C16 10000PF GND C26 4.7UF GND P J3 1 3 5 7 9 GND N GND 1 2 3 4 5 6 7 8 J7 GND NC GND RFIN GND NC NC GND U1 HMC943ALP5DE GND NC GND RFOUT GND VDET VREF GND 24 23 22 21 20 19 18 17 J2 R2 VDET 40.2K VREF GND GND VG VD2 VD4 VD6 NC VD8 GND RFIN PAD GND VG VD1 VD3 VD5 NC VD7 GND PAD 32 31 30 29 28 27 26 25 GND J3 2 4 6 8 10 VD7 VD5 VD3 VD1 VG1 VD7 VG1 C30 4.7UF P GND RFOUT VDD6 R1 9 10 11 12 13 14 15 16 40.2K GND VD8 VG2 N C21 4.7UF P GND C11 10000PF GND C1 100PF GND C5 100PF GND C15 10000PF C25 4.7UF GND J4 2 4 6 8 10 12 14 VG2 VD2 VD4 VD6 VD8 VREF VDD6 P N GND J4 1 3 5 7 9 11 13 VDET GND VD2 P N VD6 C22 4.7UF GND C12 10000PF GND C2 100PF GND C4 100PF GND C14 10000PF C24 4.7UF GND P N GND VD4 P N C23 4.7UF GND C13 10000PF GND C3 100PF GND J5 THRUCAL Amplifiers - Linear & Power - SMT VD3 P J6 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 10 HMC943ALP5DE v11.0518 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 34 GHz Amplifiers - Linear & Power - SMT Evaluation PCB ASSEMBLY NOTE: ATTACH HEATSINK USING SN96 SOLDER TO THE SECONDARY SIDE OF THE PCB. List of Materials for Evaluation PCB EV1HMC943ALP5D [1] Item Description J7, J2, J5, J6 SRI, K Connectors J3, J4 DC Pins C1 - C10 100 pF Capacitors, 0402 Pkg. C11 - C20 10000 pF Capacitors, 0402 Pkg. C21 - C30 4.7 µF Capacitors, Case A Pkg. R1, R2 40.2K Resistors, 0402Pkg U1 HMC943ALP5DE Power Amplifier PCB [2] 042915 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Analog Devices upon request. [2] Circuit Board Material: Rogers 4350 or Arlon FR4 11 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D