DMN3016LDV DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary RDS(ON) max ID max TC = +25°C 12mΩ @ VGS = 10V 21A 17mΩ @ VGS = 4.5V 18A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: PowerDI3333-8 (Type UXC) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Power Management Functions Analog Switch PowerDI3333-8 (Type UXC) D1 D2 D1 D1 D2 D2 G2 S2 S1 G1 G1 G2 PIN1 S1 Top View S2 Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number DMN3016LDV-7 DMN3016LDV-13 Notes: Case PowerDI3333-8 (Type UXC) PowerDI3333-8 (Type UXC) Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCED INFORMATION BVDSS 30V Features SD6 C60 SD6 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 for 2016) WW = Week Code (01 to 53) PowerDI is a registered trademark of Diodes Incorporated. DMN3016LDV Document number: DS38744 Rev. 2 - 2 1 of 7 www.diodes.com July 2016 © Diodes Incorporated DMN3016LDV Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage ADVANCED INFORMATION Continuous Drain Current, VGS = 10V (Note 7) Steady State ID Value 30 ±20 21 17 IS IDM IAS EAS 70 22 24 TC = +25°C TC = +70°C Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (380μs pulse, Duty cycle = 1%) Avalanche Current (L = 0.1mH) (Note 8) Avalanche Energy (L = 0.1mH) (Note 8) Unit V V A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) RθJA Total Power Dissipation (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics Value 0.9 134 78 1.8 70 41 15 -55 to +150 RθJA RθJC TJ, TSTG Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) 1.4 RDS(ON) - VSD - 2.0 12 17 1.0 V Static Drain-Source On-Resistance 9.5 14 0.70 VDS = VGS, ID = 250μA VGS = 10V, ID = 7A VGS = 4.5V, ID = 7A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd - 1184 137 107 3.0 9.5 21 3.8 4.1 4.5 3.3 14 3.6 9.3 2.5 - Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: tD(ON) tR tD(OFF) tF tRR QRR mΩ V Test Condition pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, ID = 12A ns VDD = 15V, VGS = 10V, RL = 1.5Ω, RG = 3Ω ns nC IF = 12A, di/dt = 500A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. PowerDI is a registered trademark of Diodes Incorporated. DMN3016LDV Document number: DS38744 Rev. 2 - 2 2 of 7 www.diodes.com July 2016 © Diodes Incorporated DMN3016LDV 30.0 30 VGS = 4.0V VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5.0V 25 VGS = 3.5V 20.0 15.0 VGS = 3.0V VGS = 10V 10.0 VGS = 2.5V 5.0 20 15 10 5 0.0 0 0 0.5 1 1.5 2 2.5 3 0 TJ = 25oC TJ = -55oC 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 5 Figure 2. Typical Transfer Characteristic 100 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 20.00 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) TJ = 85oC TJ = 150oC TJ = 125oC 18.00 16.00 VGS = 4.5V 14.00 12.00 10.00 8.00 VGS = 10V 6.00 4.00 2.00 0.00 90 80 70 60 50 40 30 20 ID = 12A 10 0 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2 0.02 VGS = 10V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCED INFORMATION 25.0 TJ = 150oC 0.015 TJ = 125oC TJ = 85oC 0.01 TJ = 25oC TJ = -55oC 0.005 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs Drain Current and Temperature 1.8 1.6 1.4 VGS = 4.5V, ID = 5A 1.2 1 0.8 VGS = 10V, ID = 10A 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature PowerDI is a registered trademark of Diodes Incorporated. DMN3016LDV Document number: DS38744 Rev. 2 - 2 3 of 7 www.diodes.com July 2016 © Diodes Incorporated 3 0.02 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.03 VGS = 4.5V, ID = 5A 0.01 VGS = 10V, ID = 10A 2.5 2 ID = 1mA 1.5 ID = 250µA 1 0.5 0 0 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature -25 -50 30 f = 1MHz CT, JUNCTION CAPACITANCE (pF) 25 IS, SOURCE CURRENT (A) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Junction Temperature 10000 VGS = 0V 20 15 TJ = 150oC TJ = 125oC 10 TJ = 85oC 5 TJ = 25oC Ciss 1000 Coss 100 Crss TJ = -55oC 0 10 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 1.2 0 10 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 30 100 RDS(ON) Limited 8 4 VDS = 15V, ID = 12A PW =10s PW =1s 0.1 0.01 0 2 4 6 8 10 12 14 16 Qg (nC) Figure 11. Gate Charge 18 20 PW = 100µs DC 1 2 0 PW =1ms 10 ID, DRAIN CURRENT (A) 6 VGS (V) ADVANCED INFORMATION DMN3016LDV 22 TJ(Max)=150℃ TC=25℃ PW =100ms Single Pulse DUT on 1*MRP Board PW =10ms VGS=10V 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 PowerDI is a registered trademark of Diodes Incorporated. DMN3016LDV Document number: DS38744 Rev. 2 - 2 4 of 7 www.diodes.com July 2016 © Diodes Incorporated DMN3016LDV 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCED INFORMATION D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t)=r(t) * RθJA RθJA=134℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance PowerDI is a registered trademark of Diodes Incorporated. DMN3016LDV Document number: DS38744 Rev. 2 - 2 5 of 7 www.diodes.com July 2016 © Diodes Incorporated DMN3016LDV Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UXC) D A A1 E1 E a ADVANCED INFORMATION D1 c L E3 E4 E2 k1 D2 k PowerDI3333-8 (Type UXC) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 0.90 1.30 1.10 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 1.60 2.00 1.80 E3 0.95 1.35 1.15 E4 0.10 0.30 0.20 e 0.65 L 0.30 0.50 0.40 k 0.50 0.90 0.70 k1 0.13 0.53 0.33 a 0° 12° 10° All Dimensions in mm L b e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UXC) X3 X2 Y2 X1 G1 G Y1 Y3 Dimensions Value (in mm) C 0.650 G 0.230 G1 0.600 X 0.420 X1 1.200 X2 2.370 X3 2.630 Y 0.600 Y1 1.900 Y2 2.400 Y3 3.600 Y C X PowerDI is a registered trademark of Diodes Incorporated. DMN3016LDV Document number: DS38744 Rev. 2 - 2 6 of 7 www.diodes.com July 2016 © Diodes Incorporated DMN3016LDV IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com PowerDI is a registered trademark of Diodes Incorporated. DMN3016LDV Document number: DS38744 Rev. 2 - 2 7 of 7 www.diodes.com July 2016 © Diodes Incorporated