IXTA08N100P IXTP08N100P IXTY08N100P PolarTM Power MOSFET VDSS ID25 = 1000V = 0.8A ≤ 20Ω Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 0.8 A IDM TC = 25°C, Pulse Width Limited by TJM 1.5 A IA EAS TC = 25°C TC = 25°C 0.8 80 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 42 W -55 ... +150 150 -55 ... +150 °C °C °C S Maximum Ratings TJ TJM Tstg (TAB) TL 1.6mm (0.062) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 TO-252 2.50 3.00 0.35 g g g (TO-220) TO-220 (IXTP) G (TAB) D S TO-252 (IXTY) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z International Standard Packages Avalanche Rated Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 50μA 2.0 IGSS z z V 4.0 V VGS = ±20V, VDS = 0V ±50 nA IDSS VDS = VDSS, VGS= 0V 3 100 μA μA RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 20 Ω TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 17 Easy to Mount Space Savings High Power Density Applications z z z z z Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99865C(04/09) IXTA08N100P IXTP08N100P IXTY08N100P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS= 30V, ID = 0.5 • ID25, Note 1 0.35 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-220 (IXTP) Outline 0.60 S 240 18 3.6 pF pF pF 19 37 35 34 ns ns ns ns VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 11.3 1.7 6.7 nC nC nC (TO-220) 0.50 3.0 °C/W °C/W Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 50Ω (External) Source-Drain Diode Pins: 1 - Gate 2 - Drain Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 0.8 A ISM Repetitive, Pulse Width Limited by TJM 2.4 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 0.8A, -di/dt = 100A/μs VR = 100V, VGS = 0V 750 ns TO-252 (IXTY) Outline Note 1: Pulse Test, t ≤ 300 μs; Duty Cycle, d ≤ 2%. Pins: Dim. TO-263 (IXTA) Outline 1 - Gate 3 - Source Millimeter Min. Max. 2,4 - Drain Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA08N100P IXTP08N100P IXTY08N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 0.8 1.2 VGS = 10V 7V 0.7 VGS = 10V 7V 1.0 0.5 ID - Amperes ID - Amperes 0.6 6V 0.4 0.3 0.8 6V 0.6 0.4 0.2 5V 0.2 5V 0.1 0 0.0 0 2 4 6 8 10 12 14 16 0 18 5 10 25 30 35 3.0 0.8 VGS = 10V 7V 0.7 VGS = 10V 2.6 RDS(on) - Normalized 0.6 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 0.4A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 6V 0.5 0.4 0.3 5V 0.2 2.2 I D = 0.8A 1.8 I D = 0.4A 1.4 1.0 0.6 0.1 0 0.2 0 5 10 15 20 25 30 35 40 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 0.4A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 0.9 2.6 VGS = 10V 2.4 0.8 TJ = 125ºC 2.2 0.7 2.0 0.6 ID - Amperes RDS(on) - Normalized 15 VDS - Volts VDS - Volts 1.8 1.6 0.5 0.4 0.3 1.4 0.2 1.2 TJ = 25ºC 1.0 0.1 0 0.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA08N100P IXTP08N100P IXTY08N100P Fig. 7. Input Admittance Fig. 8. Transconductance 0.9 1.0 0.8 0.9 0.8 0.7 25ºC g f s - Siemens 0.7 0.6 ID - Amperes TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 0.5 0.4 0.3 0.6 125ºC 0.5 0.4 0.3 0.2 0.2 0.1 0.1 0.0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 0.1 0.2 0.3 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 0.5 0.6 0.7 0.8 0.9 Fig. 10. Gate Charge 2.4 10 2.2 9 2 VDS = 500V I D = 0.4A 8 I G = 1mA 1.8 7 1.6 VGS - Volts IS - Amperes 0.4 ID - Amperes 1.4 1.2 1 6 5 4 TJ = 125ºC 0.8 3 0.6 TJ = 25ºC 2 0.4 1 0.2 0 0 0.4 0.5 0.6 0.7 0.8 0 0.9 1 2 VSD - Volts 3 4 5 6 7 8 9 10 11 12 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1,000 10.0 f = 1MHz 100 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 10 1.0 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.1 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_08N100P (1A) 04-02-08-A