PROCESS CP373 MOSFET Transistor N-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 39 x 27 MILS Die Thickness 7.5 MILS Gate Bonding Pad Area 6.5 x 6.5 MILS Source Bonding Pad Area 30 x 20 MILS Top Side Metalization Al - 40,000Å Back Side Metalization Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å GEOMETRY GROSS DIE PER 8 INCH WAFER 43,500 PRINCIPAL DEVICE TYPE CMPDM303NH CTLDM303N-M832DS R1 (10-October 2012) w w w. c e n t r a l s e m i . c o m PROCESS CP373 Typical Electrical Characteristics R1 (10-October 2012) w w w. c e n t r a l s e m i . c o m