CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. Package Type : 440117, 4401 33 PN: CGHV145 00 Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 545 540 530 530 530 W Gain 16.4 16.3 16.2 16.2 16.2 dB 69 69 68 66 65 % Drain Efficiency Note: Measured in the CGHV14500-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 41 dBm. 15 Rev 3.1 – July 20 Features • Reference design amplifier 1.2 - 1.4 GHz Operation • FET tuning range UHF through 1800 MHz • 530 W Typical Output Power • 16 dB Power Gain • 68% Typical Drain Efficiency • <0.3 dB Pulsed Amplitude Droop • Internally pre-matched on input, unmatched output Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 125 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 84 mA 25˚C Maximum Drain Current1 IDMAX 36 A 25˚C Soldering Temperature2 TS 245 ˚C τ 40 in-oz Screw Torque CW Thermal Resistance, Junction to Case RθJC 0.47 ˚C/W PDISS = 334 W, 65˚C 3 Pulsed Thermal Resistance, Junction to Case RθJC 0.28 ˚C/W PDISS = 334 W, 500 µsec, 10%, 85˚C Pulsed Thermal Resistance, Junction to Case4 RθJC 0.31 ˚C/W PDISS = 334 W, 500 µsec, 10%, 85˚C TC -40, +130 ˚C PDISS = 334 W, 500 µsec, 10% 3 Case Operating Temperature5 Note: Current limit for long term, reliable operation Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV14500P 4 Measured for the CGHV14500F 5 See also, the Power Dissipation De-rating Curve on Page 5 1 2 Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 83.6 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 500 mA Saturated Drain Current IDS 62.7 75.2 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 83.6 mA DC Characteristics (TC = 25˚C) 1 2 RF Characteristics3 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted) Output Power POUT 422 530 – W VDD = 50 V, IDQ = 500 mA, PIN = 41 dBm Drain Efficiency DE 63 68 – % VDD = 50 V, IDQ = 500 mA, PIN = 41 dBm Power Gain GP 15.25 16.2 – dB VDD = 50 V, IDQ = 500 mA, PIN = 41 dBm Pulsed Amplitude Droop D – -0.3 – dB VDD = 50 V, IDQ = 500 mA Output Mismatch Stress VSWR – 5:1 – Y No damage at all phase angles, VDD = 50 V, IDQ = 500 mA, PIN = 41 dBm Pulsed Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV14500-AMP. Pulse Width = 500 μS, Duty Cycle = 10%. Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV14500 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. -CGHV14500 CGHV14500 Typical Sparameters Typical Sparameters VDDVdd = 50= V, 500 mAmA 50IDQ V, =Idq = 500 25 20 15 Magnitude (dB) 10 5 0 -5 -10 -15 S(2,1) S(1,1) -20 -25 S(2,2) 1 1.1 1.2 1.3 1.4 Frequency (GHz) 1.5 1.6 Figure 2. - CGHV14500 Typical RF Results CGHV14500 Typical VDD = 50 V, I = 500 mA,RF PINResults = 41 dBm Vdd = 50 V,DQ Idq = 500 mA, Pin = 41 dBm Tcase = 25°C, Pulse Width = 500 µs, = 10 10%% Tcase = 25 deg C, Pulse Width = 500 us,Duty DutyCycle Cycle = 700 80 DrainEfficiency Efficiency Drain 70 Output Power Output Power (W) 500 60 OutputDrain Power Efficiency 400 50 Output Power Gain 300 40 Drain Efficiency Gain 200 Gain 100 0 1.1 1.2 1.2 1.3 30 Gain Gain 20 1.3 Frequency (GHz) 1.4 1.4 1.5 Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV14500 Rev 3.0 Gain (dB) & Drain Efficiency (%) 600 1.5 10 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 3. - CGHV14500 Typical RF Results VDD = 50 V, IDQ = 500 mA,RFPResults = 41 dBm CGHV14500 Typical IN VddPulse = 50 V,Width Idq = 500 mA, µs, Pin =Duty 41 dBm Tcase = 85°C, = 500 Cycle = 10 % Tcase = 85 deg C, Pulse Width = 500 us, Duty Cycle = 10 % 700 80 70 Drain Efficiency Output Power (W) 500 60 400 50 Output Power Gain Output Power Drain Efficiency 300 40 200 30 Gain 100 0 1.1 1.2 1.2 1.3 Gain (dB) & Drain Efficiency (%) 600 20 1.3 Frequency (GHz) 1.4 1.4 1.5 1.5 10 Figure 4. - CGHV14500 Typical CW RF Results VDD = 50 V, IDQ = 500 mA, PIN = 40 dBm, Tcase = 50°C CGHV14500F CW RF Results Vdd = 50 V, Idq = 500 mA, Pin = 40 dBm, Tcase = 50 C 500 80 450 Output Power 70 Output Power (W) 60 350 Drain Efficiency 300 50 250 200 150 40 Pout Gain 30 Drain Eff Gain 20 100 10 50 0 1.10 Gain (dB) and Drain Efficiency (%) 400 1.15 1.20 1.25 1.30 1.35 1.40 1.45 0 1.50 Frequency (GHz) Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV14500 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 900 0.3 - j0.3 2.1 + j1.4 1000 0.3 - j0.4 2.0 +j0.7 1100 0.6 - j0.4 1.8 + j0.9 1200 0.8 - j0.7 1.5 + j0.9 1300 1.1 - j0.7 1.3 + j0.7 1400 1.2 - j0.1 1.2 + j0.5 1500 1.8 - j0.1 1.1 + j0.4 Note 1. VDD = 50 V, IDQ = 500 mA in the 440117 package Note 2. Optimized for power gain, PSAT and Drain Efficiency Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability CGHV14500 Power Dissipation De-rating Curve CGHV14500 Transient PowerDissipation Dissipation De-Rating Curve Curve Figure 5. - CGHV14500 Transient Power De-Rating 400 350 Pill - 500 µs 10% Power Dissipation (W) 300 250 Note 1 200 Flange - CW 150 Flange - 500 us 10 % Pill - 500 us 10 % 100 Flange - CW Pill - CW 50 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature ( C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV14500 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV14500-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, 1%, 562 OHMS 1 R2 RES, 5.1 OHM, +/-1%, 1/16W, 0603 1 R3 RES, 1/16W, 0603, 1%, 4700 OHMS 1 L1 INDUCTOR, CHIP, 6.8 nH, 0603 SMT 1 CAP, 27pF, +/- 5%, 250V, 0805, ATC 600F 2 C1, C23 CAP, 2.0pF, +/- 0.1pF, 0603, ATC 1 C3, C4 C2 CAP, 1.5pF, +/-0.05pF, 250V, 0805, ATC 600F 2 C5,C6 CAP, 1.8pF, +/-0.1pF, 250V, 0805, ATC 600F 2 C7,C8 CAP, 4.3pF, +/-0.1pF, 250V, 0805, ATC 600F 2 C9,C10 CAP, 7.5pF, +/-0.1pF, 250V, 0805, ATC 600F 2 C11,C24 CAP, 47pF,+/-5%, 250V, 0805, ATC 600F 2 C12,C25 CAP, 100pF, +/-5%, 250V, 0805, ATC 600F 2 C13,C26 CAP, 33000PF, 0805,100V, X7R 2 CAP 10uF 16V TANTALUM 1 C15,C16 CAP, 5.6pF, +/-0.1pF, 250V, 0805, ATC 600F 2 C17,C18 CAP, 3.6pF, +/-0.1pF, 250V, 0805, ATC 600F 2 C19,C20 CAP, 2.0pF, +/-0.1pF, 250V, 0805, ATC 600F 2 C21,C22 C14 CAP, 0.7pF, +/-0.05pF, 0805, ATC 600F 2 C27 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C28 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1 J1,J2 CONN, SMA, PANEL MOUNT JACK, FL 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2 1 PCB, RO4350B, 0.020’ MIL THK, CGHV14500, 1.2-1.4GHZ 1 CGHV14500 1 Q1 CGHV14500-AMP Demonstration Amplifier Circuit Pill - 1ms 20% Flange - 1ms 20% Note 1 Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV14500 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV14500-AMP Demonstration Amplifier Circuit Outline CGHV14500-AMP Demonstration Amplifier Circuit Schematic Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV14500 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV14500F (Package Type — 440117) Product Dimensions CGHV14500P (Package Type — 440133) Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV14500 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV14500F Type Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Type Value Units 1.4 GHz 500 W F = Flanged P = Package - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV14500 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV14500F GaN HEMT Each CGHV14500P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV14500F-TB CGHV14500F-AMP Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV14500 Rev 3.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV14500 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf