UTC MPSA194G-T92-A-B Pnp epitaxial silicon transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MPSA194
PNP SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR

1
DESCRIPTION
TO-92
The UTC MPSA194 is designed for high voltage low power
switching applications especially for use in telephone and
telecommunication circuits.

FEATURES
* Collector-Emitter Voltage: VCEO=400V
* Power Dissipation: 1.0W

1
TO-92NL
APPLICATIONS
* Telephone Circuit
* Telecommunication Circuit

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MPSA194L-T92-C-B
MPSA194G-T92-C-B
MPSA194L-T92-C-K
MPSA194G-T92-C-K
MPSA194L-T92-A-B
MPSA194G-T92-A-B
MPSA194L-T92-A-K
MPSA194G-T92-A-K
MPSA194L-T9N-B
MPSA194G-T9N-B
MPSA194L-T9N-K
MPSA194G-T9N-K
Note: Pin assignment: B: Base
C: Collector
E: Emitter

Package
TO-92
TO-92
TO-92
TO-92
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
B
C
E
B
C
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
MARKING INFORMATION
TO-92NL
1
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MPSA194

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
-400
V
Collector to Emitter Voltage
VCEO
-400
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current
IC
-800
mA
Collector Dissipation (TA=25C)
PC
1.0
W
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TJ =25C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collect Cut-off Current
Collect Cut-off Current
Emitter Cut-off Current
DC Current Gain
SYMBOL
BVCBO
BVCEO
ICBO
ICEO
IEBO
hFE
Base-Emitter Saturation Voltage
VBE(SAT)
Collector-Emitter Saturation Voltage
VCE(SAT)
Output Capacitance
Current Gain Bandwidth Product
COB
fT
TEST CONDITIONS
IC =-100µA, IE =0A
IC =-1mA, IB =0A
VCB =-400 V, IE =0A
VCB =-200 V, VBE =0V
VEB = -6 V, IC =0A
VCE =-10 V ,IC =-1mA
VCE =-10 V ,IC =-20mA
VCE =-10 V ,IC =-80mA
IC =-20mA, IB =- 2mA
IC =-20mA, IB =- 4mA
IC =-80mA, IB =- 2mA
VCB =-20 V, IE =0A, f =1MHz
VCE =-20V, IE =-10A, f =1MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
-400
-400
50
50
40
TYP MAX UNIT
V
V
-10
µA
-1
µA
-0.2
µA
800
-0.9
-0.2
-1.2
30
10
V
V
V
pF
MHZ
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Collector Current , IC(mA)
Collector Current , IC(µA)
Collector Current , IC(mA)

Collector Current , IC(mA)
Emitter Current , IE(µA)
MPSA194
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
QW-R201-026.E
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MPSA194
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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