Diodes DMT6002LPS-13 60v n-channel enhancement mode mosfet Datasheet

DMT6002LPS
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
BVDSS
60V
Features
RDS(ON) Max
ID
TC = +25°C
(Note 9)
2mΩ @ VGS = 10V
100A
3mΩ @ VGS = 6V
100A




100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Thermally Efficient Package – Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses



<1.1mm Package Profile – Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it


ideal for high efficiency power management applications.






Switching
Synchronous Rectification
DC-DC Converters
Case: PowerDI5060-8 (Type K)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8 (Type K)
Pin1
Bottom View
Top View
Internal Schematic
S
D
S
D
S
D
G
D
Top View
Pin Configuration
Ordering Information (Note 4)
Part Number
DMT6002LPS-13
Notes:
Case
PowerDI5060-8 (Type K)
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
D
D
D
=Manufacturer’s Marking
T6002LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
T6002LS
YY WW
S
S
S
G
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DMT6002LPS
Document number: DS39090 Rev. 1 - 2
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DMT6002LPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
TC = +25°C
(Note 9)
TC = +70°C
Continuous Drain Current, VGS = 10V (Note 6)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 3mH
Avalanche Energy, L = 3mH
Value
60
±20
100
ID
TC = +25°C
Unit
V
V
A
IDM
IS
IAS
EAS
100
200
100
14
294
A
A
A
mJ
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.3
55
167
0.9
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
—
—
—
—
—
—
1
±100
V
µA
nA
VGS = 0V, ID = 250µA
VDS = 48V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
—
1.5
2.2
—
3
2
3
1.2
V
Static Drain-Source On-Resistance
1
—
—
—
VDS = VGS, ID = 250µA
VGS = 10V, ID = 50A
VGS = 6V, ID = 50A
VGS = 0V, IS = 50A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6555
2264
187
0.7
130.8
63.6
20.8
29.4
11.2
10.8
44
19.5
61.8
123
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
mΩ
V
Test Condition
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 30V, ID = 50A
ns
VDD = 20V, VGS = 10V,
ID = 50A, Rg = 2.5Ω
ns
nC
IF = 50A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
POWERDI is a registered trademark of Diodes Incorporated.
DMT6002LPS
Document number: DS39090 Rev. 1 - 2
September 2016
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DMT6002LPS
30
100.0
VGS = 4.0V
VGS=4.5V
VGS = 5.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
80.0
VDS = 5V
25
VGS = 10.0V
60.0
VGS = 3.5V
40.0
20.0
20
15
125℃
10
85℃
5
VGS = 3.0V
25℃
150℃
-55℃
0
0.0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
4
VGS = 4.5V
2
VGS = 10V
1
0
0
20
40
60
80
ID, DRAIN-SOURCE CURRENT (A)
100
9
8
7
6
5
4
3
ID = 90A
2
1
0
2
0.003
150℃
125℃
85℃
25℃
-55℃
0
20
40
60
80
100
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
Document number: DS39090 Rev. 1 - 2
8
10
12
14
16
18
20
2.2
2
1.8
VGS = 10V, ID = 50A
1.6
1.4
1.2
1
0.8
VGS = 4.5V, ID = 50A
0.6
0.4
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DMT6002LPS
6
Figure 4. Typical Transfer Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
VGS = 10V
0
4
VGS, GATE-SOURCE VOLTAGE (V)
0.004
0.001
4
10
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.002
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
3
1
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(mΩ)
0
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (℃)
150
Figure 6. On-Resistance Variation with Temperature
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0.005
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
DMT6002LPS
0.004
VGS = 4.5V, ID = 50A
0.003
0.002
VGS = 10V, ID = 50A
0.001
0
-50
-25
0
25
50
75
100
125
2.4
2.2
2
ID = 1mA
1.8
1.6
1.4
ID = 250μA
1.2
1
0.8
0.6
0.4
150
-50
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
50
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Ambient
Temperature
CT, JUNCTION CAPACITANCE (pF)
100000
VGS = 0V
IS, SOURCE CURRENT (A)
-25
40
30
TA = 85oC
20
TA = 125oC
TA = 25oC
TA = 150oC
10
TA = -55oC
f=1MHz
Ciss
10000
Coss
1000
Crss
100
10
0
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
Figure 9. Diode Forward Voltage vs. Current
40
Figure 10. Typical Junction Capacitance
10
1000
RDS(ON) Limited
ID, DRAIN CURRENT (A)
8
VGS (V)
35
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
6
VDS = 30V, ID = 50A
4
2
0
100
30
60
90
120
PW =1ms
1
150
Qg (nC)
Figure 11. Gate Charge
POWERDI is a registered trademark of Diodes Incorporated.
DMT6002LPS
Document number: DS39090 Rev. 1 - 2
PW =10µs
PW =100µs
10
0.1
0
PW =1µs
TJ(Max) = 175℃
TC = 25℃
Single Pulse
DUT on Infinite Heatsink
VGS= 10V
0.1
PW =10ms
PW =100ms
DC
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
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DMT6002LPS
r(t), TRANSIENT THERMAL RESISTANCE
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
RθJC(t) = r(t) * RθJC
RθJC = 0.93℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
1
10
Figure 13. Transient Thermal Resistance
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DMT6002LPS
Document number: DS39090 Rev. 1 - 2
September 2016
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DMT6002LPS
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8 (Type K)
D
D1
0(4x)
c
x
E1
A1
E
Seating Plane
y
e
C
1
Ø 1.000 Depth 0.07± 0.030
01(4x)
b1(8x)
b(8x)
DETAIL A
e/2
1
L
D2
E2
k
b2(2x)
L4
A
M
DETAIL A
La
PowerDI5060-8
(Type K)
Dim
Min
Max
Typ
A
0.90
1.10 1.00
A1
0
0.05 0.02
b
0.33
0.51 0.41
b1
0.300 0.366 0.333
b2
0.20
0.35 0.25
c
0.23
0.33 0.277
D
5.15 BSC
D1
4.85
4.95 4.90
D2
3.98
E
6.15 BSC
E1
5.75
5.85 5.80
E2
3.56 3.725 3.66
E
1.27BSC
k
1.27
L
0.51
0.71 0.61
La
0.51 0.675 0.61
L1
0.05
0.20 0.175
L4
0.125
M
3.50
3.71 3.605
x
1.400
y
1.900
θ
10°
12°
11°
θ1
6°
8°
7°
All Dimensions in mm
L1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8 (Type K)
X2
Y1
Dimensions
C
G
G1
X
X1
X2
Y
Y1
Y2
Y3
Y2
Y3
X1
G1
Y
C
X (8x)
G
POWERDI is a registered trademark of Diodes Incorporated.
DMT6002LPS
Document number: DS39090 Rev. 1 - 2
Value
(in mm)
1.270
0.660
0.820
0.610
3.910
4.420
1.270
1.020
3.810
6.610
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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Copyright © 2016, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated.
DMT6002LPS
Document number: DS39090 Rev. 1 - 2
September 2016
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