CYSTEKEC MTEF1P15AV8-0-T6-G P-channel enhancement mode power mosfet Datasheet

Spec. No. : C896V8
Issued Date : 2015.12.16
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTEF1P15AV8
BVDSS
-150V
-5.4A @ VGS=-10V, TC=25°C
ID
0.52Ω @ VGS=-10V, ID=-1.4A
RDSON(Typ)
0.56Ω@ VGS=-6V, ID=-1A
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTEF1P15AV8
DFN3×3
Pin 1
G:Gate S:Source D:Drain
Ordering Information
Device
MTEF1P15AV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTEF1P15AV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896V8
Issued Date : 2015.12.16
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V
Continuous Drain Current @ TC=100°C, VGS=-10V
Continuous Drain Current @ TA=25°C, VGS=-10V
Continuous Drain Current @ TA=70°C, VGS=-10V
Pulsed Drain Current
TC=25℃
Continuous Source-Drain Diode Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=-10A, VGS=-10V
TC=25℃
TC=70℃
Maximum Power Dissipation
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
Symbol
Limits
VDS
VGS
-150
±30
-5.4
-3.4
-1.3
-1.0
-16
-5.4
-10
50
42
27
2.1
1.3
-55~+150
ID
*3
*3
IDM
IS
IAS
EAS
*1, 2
*4
PD
*3
*3
Tj, Tstg
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient
Thermal Resistance, Junction-to-case
Symbol
Rth,j-a
Rth,j-c
*3
Typ
50
2.5
Maximum
60
3
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 135°C/W when mounted on minimum pad of 2 oz. copper.
4. 100% tested by conditions of L=1mH, VGS=-10V, IAS=-7A, VDD=-25V
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
ΔBVDSS/ΔTJ
ΔVGS(th)/ ΔTJ
VGS(th)
IGSS
IDSS
RDS(ON)
GFS
MTEF1P15AV8
*1
*1
Min.
Typ.
Max.
Unit
-150
-2
-
-106
6
0.52
0.56
2.8
-4
±100
-1
-10
0.68
0.79
-
V
mV/°C
V
nA
μA
Ω
S
Test Conditions
VGS=0V, ID=-250μA
ID=-250μA
VDS =VGS, ID=-250μA
VGS=±30V, VDS=0V
VDS =-120V, VGS =0V
VDS =-120V, VGS =0V, TJ=55°C
VGS =-10V, ID=-1.4A
VGS =-6V, ID=-1A
VDS =-10V, ID=-1.4A
CYStek Product Specification
CYStech Electronics Corp.
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf
*1, 2
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
10.5
3.1
2.9
9.8
16.6
31.4
28.4
571
29
17
-
-
-0.77
28
33
-5.4
-16
-1.2
-
Spec. No. : C896V8
Issued Date : 2015.12.16
Revised Date :
Page No. : 3/9
nC
VDS=-75V, ID=-5.4A,VGS=-10V
ns
VDS=-75V, ID=-1A, VGS=-10V, RG=6Ω
pF
VDS=-30V, VGS=0V, f=1MHz
A
TC=25°C
V
ns
nC
IF=-1A, VGS=0V
IF=-1A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTEF1P15AV8
CYStek Product Specification
Spec. No. : C896V8
Issued Date : 2015.12.16
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-I D, Drain Current(A)
10V,9V,8V,7V,6V
8
6
5V
4
2
1.2
1
0.8
ID=-250μA,
VGS=0V
0.6
-VGS=4V
0.4
0
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
12
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
0.8
-VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(Ω)
1.0
VGS=-6V
0.6
0.4
VGS=-10V
0.2
Tj=25°C
VGS=0V
1
0.8
Tj=150°C
0.6
0.4
0.2
0.0
0.01
0.1
1
-ID, Drain Current(A)
0
10
2
4
6
8
-IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1.2
2.4
1
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(Ω)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-1.4A
0.8
0.6
0.4
0.2
2
VGS=-10V, ID=-1.4A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 0.52Ω typ.
0
0
0
MTEF1P15AV8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C896V8
Issued Date : 2015.12.16
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
Crss
C oss
1.4
1.2
ID=-1mA
1
0.8
ID=-250μA
0.6
0.4
10
0
5
10 15 20 25 30 35 40
-VDS, Drain-Source Voltage(V)
45
-75 -50 -25
50
50
75 100 125 150 175
Gate Charge Characteristics
10
100
VDS=-75V
-VGS, Gate-Source Voltage(V)
RDS(ON)
Limited
10
-I D, Drain Current(A)
25
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
100μs
1
1ms
10ms
0.1
100ms
1s
10
DC
TA=25°C, Tj=150°, VGS=-10V
RθJA=60°C/W, Single Pulse
0.01
8
VDS=-50V
6
VDS=-100V
4
2
ID=-5.4A
0
0.001
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
0
1000
Forward Transfer Admittance vs Drain Current
-I D, Maximum Drain Current(A)
0.1
MTEF1P15AV8
4
6
8
Qg, Total Gate Charge(nC)
10
12
1.5
1
0.01
0.001
2
Maximum Drain Current vs Junction Temperature
10
GFS, Forward Transfer Admittance(S)
0
VDS=-10V
Pulsed
Ta=25°C
1.2
0.9
0.6
0.3
VGS=-10V, RθJA=60°C/W
0
0.01
0.1
1
-ID, Drain Current(A)
10
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896V8
Issued Date : 2015.12.16
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
150
10
Peak Transient Power (W)
VDS=-10V
-ID, Drain Current(A)
8
6
4
2
0
0
2
4
6
-VGS , Gate-Source Voltage(V)
8
10
TJ(MAX) =150°C
TA=25°C
RθJA=60°C/W
120
90
60
30
0
0.0001 0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
Transient Thermal Response Curves
1
r (t), Normalized Effective Transient Thermal
Response
D=0.5
0.1
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=60°C/W
0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTEF1P15AV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896V8
Issued Date : 2015.12.16
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTEF1P15AV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896V8
Issued Date : 2015.12.16
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTEF1P15AV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896V8
Issued Date : 2015.12.16
Revised Date :
Page No. : 9/9
DFN3×3 Dimension
Marking:
D D
D D
EF1P
15A
Date
Code
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
*: Typical
Millimeters
Min.
Max.
0.605
0.850
0.152 REF
0.000
0.050
2.900
3.100
2.300
2.600
2.900
3.100
3.150
3.450
1.535
1.935
DIM
A
A1
A2
D
D1
E
E1
E2
Inches
Min.
Max.
0.026
0.033
0.006 REF
0.000
0.002
0.114
0.122
0.091
0.102
0.114
0.122
0.124
0.136
0.060
0.076
DIM
b
e
L
L1
L2
L3
H
θ
Millimeters
Min.
Max.
0.200
0.400
0.550
0.750
0.300
0.500
0.180
0.480
0.000
0.100
0.000
0.100
0.315
0.515
9°
13°
Inches
Min.
Max.
0.008
0.016
0.022
0.030
0.012
0.020
0.007
0.019
0.000
0.004
0.000
0.004
0.012
0.020
9°
13°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTEF1P15AV8
CYStek Product Specification
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