ZSELEC DSR0.3G 1.0a surface mount glass passivated diode Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
DSR0.3A – DSR0.3M
1.0A SURFACE MOUNT GLASS PASSIVATED DIODE
Mechanical Data
!
!
!
!
!
!
0.10-0.30
1.4± 0.15
1.9± 0.1
! Glass passivated device
! Ideally Suited for Automatic Assembly
SOD - 123FL
! Low Forward Voltage Drop, High Efficiency
! Surge Overload Rating to 2 5 A Peak
Cathode Band
Top View
! Low Power Loss
! Ultra-Fast Recovery Time
! Plastic Case Material has UL Flammability
! Classification Rating 94V-O
2.8 ± 0.1 1.0±0.2
Features
0.6±0.25
Case: SOD-123FL, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.01 grams (approx.)
Lead Free: For RoHS / Lead Free Version
3.7±0.2
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TL = 100°C
Symbol
DSR
0.3A
DSR
0.3B
DSR
0.3D
DSR
0.3G
DSR
0.3J
DSR
0.3K
DSR
0.3M
UNITS
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
800
V
IO
1.0
A
IFSM
25
A
@IF = 1.0A
VFM
1.3
V
@TA = 25°C
@TA = 100°C
IRM
10
500
µA
Cj
15
pF
RJL
30
°C/W
Tj, TSTG
-65 to +150
°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@TA=25°C unless otherwise specified
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
DSR0.3A – DSR0.3M
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Z ibo Seno Electronic Engineering Co., Ltd.
DSR0.3A – DSR0.3M
1.0
10
IF, INSTANTANEOUS FWD CURRENT (A)
I(AV), AVERAGE FWD RECTIFIED CURRENT (A)
0.8
0.6
0.4
0.2
Single phase half-wave
60 Hz resistive or inductive load
0
25
50
75
100
125
150
175
1.0
0.1
Tj = 25°C
Pulse width = 300 µs
0.01
200
30
1.2
1.4
0.6
0.8
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
20
10
Tj = 25°C
f = 1MHz
10
1
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
100
1
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
trr
50Ω NI (Non-inductive)
(-)
10Ω NI
Device
Under
Test
(+)
+0.5A
(-)
0A
Pulse
Generator
(Note 2)
50V DC
Approx
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
DSR0.3A – DSR0.3M
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