HLDD120N03 N-Channel Enhancement Mode Power MOSFET Description Features The HLDD120N03 uses advanced trench technology □ VDS =30V,ID =120A and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application □ □ □ Power switchingapplication Hard switched and high frequencycircuits □ RDS(ON)：4.5mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Uninterruptible powersupply Marking and pin assignment N-Channel MOSFET Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter a ymbol Limit Drain-Source Voltage VDS 30 0 Gate-Source Voltage VGS ±20 2 ID 120 2 Drain Current-Continuous Drain Current-Continuous(TC=100℃) D (100℃) Pulsed Drain Current Maximum Power Dissipation Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range 8 Unit A IDM 400 0 PD 120 2 EAS 350 mJ TJ,TSTG -55 To 175 ℃ Thermal Characteristic (Note 2) Thermal Resistance,Junction-to-Case www.hldic.com RθJC Page 1 1.25 ℃/W 2017 . H1.0 HLDD120N03 Package Marking and Ordering Information Part NO. Marking Package HLDD120N03 D120N03 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 - - V Zero Gate Voltage Drain Current IDSS 0 VDS== 30V,VGS 0V - 1 μA Gate-Body Leakage Current IGSS 0 VGS=±20V,V = DS 0V - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.6 3 V Drain-Source On-State Resistance RDS(ON) A VGS= =10V, ID 20A 3.5 4.5 mΩ gFS 0A VDS= =10V,ID 20A - - S Off Characteristics On Characteristics (Note 3) Forward Transconductance 1 Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz 4120 PF 498 PF 456 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-Off Delay Time VGS=10V,VDS=20V td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd RL=0.75Ω,RGEN=3Ω - 11 - nS - 10 - nS - 38 - nS - 11 - nS VGS=10V,VDS=15V,ID=20A 79 nC 9 nC 18 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD 0 V= GS=0V,IS 20A - 1.2 V Diode Forward Current (Note 2) IS - - 120 A Reverse Recovery Time trr TJ = 25°C, IF =60A 58 - nS 115 - nC Reverse Recovery Charge Qrr Forward Turn-On Time ton (Note3) di/dt = 100A/μs - Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω www.hldic.com Page 2 2017 . H1.0 HLDD120N03 Test circuit 1）EAS test Circuits 2）Gate charge test Circuit: 3）Switch Time Test Circuit： www.hldic.com Page 3 2017 . H1.0 HLDD120N03 ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(Ω) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current www.hldic.com Figure 6 Source- Drain Diode Forward Page 4 2017 . H1.0 C Capacitance (pF) Normalized BVdss HLDD120N03 TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.hldic.com Page 5 2017 . H1.0 HLDD120N03 TO-252 Package Information www.hldic.com Page 6 2017 . H1.0