BSC065N06LS5 MOSFET OptiMOSTMPower-Transistor,60V SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Table1KeyPerformanceParameters Parameter Value Unit S1 8D VDS 60 V S2 7D RDS(on),max 6.5 mΩ S3 6D ID 64 A G4 5D QOSS 19 nC QG(0V..4.5V) 10 nC Type/OrderingCode Package BSC065N06LS5 PG-TDSON-8 1) Marking 065N06LS RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-09-30 OptiMOSTMPower-Transistor,60V BSC065N06LS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.0,2016-09-30 OptiMOSTMPower-Transistor,60V BSC065N06LS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 64 41 15 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 256 A TC=25°C - - 21 mJ ID=40A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 46 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Device on PCB, 6 cm2 cooling area1) Values Min. Typ. Max. RthJC - 1.6 2.7 K/W - RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2016-09-30 OptiMOSTMPower-Transistor,60V BSC065N06LS5 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.7 2.3 V VDS=VGS,ID=20µA - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 5.3 7.2 6.5 9.2 mΩ VGS=10V,ID=32A VGS=4.5V,ID=16A Gate resistance1) RG - 1.2 1.8 Ω - Transconductance gfs 32 63 - S |VDS|>2|ID|RDS(on)max,ID=32A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 1.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1400 1800 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 300 390 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 16 28 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 5 - ns VDD=30V,VGS=10V,ID=32A, RG,ext=3Ω Rise time tr - 3 - ns VDD=30V,VGS=10V,ID=32A, RG,ext=3Ω Turn-off delay time td(off) - 14 - ns VDD=30V,VGS=10V,ID=32A, RG,ext=3Ω Fall time tf - 3 - ns VDD=30V,VGS=10V,ID=32A, RG,ext=3Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 4.4 - nC VDD=30V,ID=32A,VGS=0to4.5V Qg(th) - 2.4 - nC VDD=30V,ID=32A,VGS=0to4.5V Gate to drain charge Qgd - 3.3 5 nC VDD=30V,ID=32A,VGS=0to4.5V Switching charge Qsw - 5.3 - nC VDD=30V,ID=32A,VGS=0to4.5V Gate charge total Qg - 10 13 nC VDD=30V,ID=32A,VGS=0to4.5V Gate plateau voltage Vplateau - 3.1 - V VDD=30V,ID=32A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 18 - nC VDS=0.1V,VGS=0to10V Qoss - 19 25.5 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2016-09-30 OptiMOSTMPower-Transistor,60V BSC065N06LS5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 39 A TC=25°C - 156 A TC=25°C - 0.9 1.2 V VGS=0V,IF=32A,Tj=25°C trr - 24 48 ns VR=30V,IF=32,diF/dt=100A/µs Qrr - 14 28 nC VR=30V,IF=32,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.0,2016-09-30 OptiMOSTMPower-Transistor,60V BSC065N06LS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 50 80 40 60 ID[A] Ptot[W] 30 40 20 20 10 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 102 0.5 10 µs 100 ZthJC[K/W] ID[A] 0.2 100 µs 101 1 ms 10 ms 0.1 0.05 0.02 10-1 DC 0.01 100 10-1 10-1 single pulse 100 101 102 10-2 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2016-09-30 OptiMOSTMPower-Transistor,60V BSC065N06LS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 250 15 3V 3.2 V 5V 200 12 3.5 V 4V 4.5 V 4.5 V ID[A] RDS(on)[mΩ] 150 4V 100 9 5V 7V 6 10 V 3.5 V 50 3 3.2 V 3V 0 2.8 V 0.0 0.5 1.0 1.5 0 2.0 0 50 100 VDS[V] 150 200 250 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 250 120 200 80 150 gfs[S] ID[A] 25 °C 150 °C 100 40 50 0 0 2 4 6 8 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.0,2016-09-30 OptiMOSTMPower-Transistor,60V BSC065N06LS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 12 3 11 10 9 8 2 max 200 µA VGS(th)[V] RDS(on)[mΩ] 7 6 typ 5 4 20 µA 1 3 2 1 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=32A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25°C max 150°C max Ciss 102 IF[A] C[pF] 103 Coss 102 101 101 Crss 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.0,2016-09-30 OptiMOSTMPower-Transistor,60V BSC065N06LS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 8 30 V 25 °C 101 7 100 °C 125 °C 12 V 48 V IAV[A] VGS[V] 6 5 4 0 10 3 2 1 10-1 100 101 102 103 0 0 5 tAV[µs] 10 15 20 25 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=32Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2016-09-30 OptiMOSTMPower-Transistor,60V BSC065N06LS5 5PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.0,2016-09-30 OptiMOSTMPower-Transistor,60V BSC065N06LS5 Figure2OutlineFootprint(TDSON-8) Final Data Sheet 11 Rev.2.0,2016-09-30 OptiMOSTMPower-Transistor,60V BSC065N06LS5 RevisionHistory BSC065N06LS5 Revision:2016-09-30,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-09-30 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.0,2016-09-30