ON FAN7080M-GF085 Half bridge gate driver Datasheet

Features
Description









The FAN7080-GF085 is a half-bridge gate drive IC w ith
reset input and adjustable dead time control. It is
designed for high voltage and high speed driving of
MOSFET or IGBT, w hich operates up to 600 V. ON
Semiconductor's high-voltage process and commonmode noise cancellation technique provide stable
operation in the high side driver under high-dV/dt noise
circumstances. An advanced level-shift circuit allow s
high-side gate driver operation up to V S=-5 V (typical) at
V BS=15 V. Logic input is compatible w ith standard
CMOS outputs. The UVLO circuits for both channels
prevent from malfunction w hen V CC and V BS are low er
than the specified threshold voltage. Combined pin
function for dead time adjustment and reset shutdow n
make this IC packaged w ith space saving SOIC-8
Package. Minimum source and sink current capability of
output driver is 250 mA and 500 mA respectively, w hich
is suitable for junction box application and half and full
bridge application in the motor drive system.


Automotive Qualified to AEC Q100
Floating Channel for Bootstrap Operation to +600 V
Tolerance to Negative Transient Voltage on VS Pin
VS-pin dv/dt Immune
Gate Drive Supply Range from 5.5 V to 20 V
Under-Voltage Lockout (UVLO)
CMOS Schmitt-triggered Inputs w ith Pull-dow n
High Side Output In-phase w ith Input
IN input is 3.3 V/5 V Logic Compatible and
Available on 15 V Input
Matched Propagation Delay for both Channels
Dead Time Adjustable
Applications


Junction Box
Half and full bridge application in the motor drive
system Related Product Resources
Figure 1.
8-Lead, SOIC, Narrow Body
Ordering Information
Part Number
Operating
Temperature Range
Package
-40°C ~ 125°C
8-Lead, Small Outline Integrated Circuit (SOIC),
JEDEC MS-012, .150 inch Narrow Body
FAN7080M-GF085
FAN7080MXGF085
© 2012 Semiconductor Components Industries, LLC.
September-2017, Rev.2
Packing Method
Tube
Tape & Reel
Publication Order Number:
FAN7080-GF085/D
FAN7080-GF085 — Half Bridge Gate Driver
FAN7080-GF085
Half Bridge Gate Driver
FAN7080-GF085 — Half Bridge Gate Driver
Typical Application
Up to 600V
VCC
1
IN
2
VCC
VB
IN
HO
8
7
To Load
R1
VDT
SHUTDOWN
/DEAD TIME
3
4
SD/DT
VS
COM
LO
6
5
R2
VDT = Vdd*R2 / (R1+R2). Vdd is output voltage of Microcontroller.
The operating range that allows a VDT range of 1.2~3.3V.
When pulled lower than VDT [Typ. 0.5V] the device is shutdown.
Care must be taken to avoid below threshold spikes on pin 3 that can cause undesired shut down of the IC.
For this reason the connection of the components between pin 3 and ground has to be as short as possible.
And a capacitor (Typ. 0.02µF )between pin3 and COM can prevent this spike. This pin can not be left
floating for the same reason.
Figure 2.
Typical Application
Block Diagram
VCC
VB
UVLO
R
vreg
IN
500kΩ
PULSE
GENERATOR
DEADTIME
CONTROL
PULSE
FILTER
R
Q
HO
S
VS
vreg
VCC
VCC
UVLO
SD/DT
DELAY
LO
500kΩ
COM
Figure 3.
Block Diagram
www.onsemi.com
2
1
2
3
4
Figure 4.
VCC
VB
IN
HO
SD/DT
VS
COM
LO
8
7
6
5
Pin Assignm ent (Top Through View )
Pin Descriptions
Pin #
Name
I/O
Pin Function Description
1
V CC
P
Driver Supply Voltage
2
IN
I
Logic input for high and low side gate drive output
3
/SD/DT
I
Shutdow n Input and dead time setting
4
COM
P
Ground
5
LO
A
Low side gate drive output for MOSFET Gate connection
6
VS
A
High side floating offset for MOSFET Source connection
7
HO
A
High side drive output for MOSFET Gate connection
8
VB
P
Driver Output Stage Supply
www.onsemi.com
3
FAN7080-GF085 — Half Bridge Gate Driver
Pin Configuration
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
VS
High-Side Floating Offset Voltage
Min.
Max.
Unit
V B-25
V B+0.3
V
VB
High-Side Floating Supply Voltage
-0.3
625
V
V HO
High-Side Floating Output Voltage
V S-0.3
V B+0.3
V
V LO
Low -Side Floating Output Voltage
-0.3
V cc+0.3
V
V CC
Supply Voltage
-0.3
25
V
V IN
Input Voltage for IN
-0.3
V CC+0.3
V
+1
mA
0.625
W
200
°C/W
150
°C
150
°C
IIN
Input Injection Current
PD
(2.3)
Pow er Dissipation
(1)
θJA
Thermal Resistance, Junction to Ambient
TJ
Junction Temperature
TSTG
Storage Temperature
ESD
(2)
-55
Human Body Model (HBM)
1000
Charge Device Model (CDM)
500
V
Notes:
1. Guaranteed by design. Full function, no latchup. Tested at 10 V and 17 V.
2. The Thermal Resistance and pow er dissipation rating are measured per below conditions:
JESD51-2: Integral circuits thermal test method environmental conditions, natural convection/Still Air
JESD51-3: Low effective thermal conductivity test board for leaded surface-mount packages.
3. Do not exceed pow er dissipation (PD) under any circumstances.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance. ON Semiconductor does not recommend
exceeding them or designing to Absolute Maximum Ratings.
Symbol
(4)
VB
Parameter
Min.
Max.
Unit
High-Side Floating Supply Voltage (DC) Transient: -10 V at 0.1 µS
V S+6
V S+20
V
VS
High-Side Floating Supply Offset Voltage (DC)
Transient: -25 V(max.) at 0.1 µS at V BS < 25 V
-5
600
V
V HO
High-Side Output Voltage
VS
VB
V
V LO
Low -Side Output Voltage
0
V CC
V
V CC
Supply Voltage for Logic Input
5.5
20
V
V IN
Logic Input Voltage
0
V CC
V
50
V/nS
dv/dt
TPULSE
Allow able Offset Voltage Slew Rate
Minimum Pulse Width
(5)
(5,6)
1100
(6)
FS
Sw itching Frequency
TA
Operating Ambient Temperature
-40
Notes:
4. The V S offset is tested w ith all supplies based at 15 V differential
5. Guaranteed by design.
6. When V DT = 1.2 V. Refer to Figures 5, 6, 7 and 8.
www.onsemi.com
4
nS
200
KHz
125
°C
FAN7080-GF085 — Half Bridge Gate Driver
Absolute Maximum Ratings
Unless otherw ise specified -40°C ≤ TA ≤ 125°C, V CC = 15 V, V BS=15 V, V S = 0 V, CL =1 nF
Symbol
Parameter
Conditions
Min.
Typ. Max.
Unit
V CC and V BS Supply Characteristics
V CCUV+
V BSUV+
V CC and V BS Supply Under-Voltage
Positive going Threshold
V CCUVV BSUV-
V CC and V BS Supply Under-Voltage
Negative going Threshold
2.8
3.6
V
V CCUVH
V BSUVH
V CC and V BS Supply Under-Voltage
Hysteresis
0.2
0.6
V
tDUVCC
tDUVBS
Under-Voltage Lockout Response Time
4.2
5.5
V CC: 6 V2.5 V or 2.5 V6 V
0.5
20
V BS: 6 V2.5 V or 2.5 V6 V
0.5
20
ILK
Offset Supply Leakage Current
V B = V S = 600 V
IQBS
Quiescent V BS Supply Current
V IN = 0 or 5 V, V SDT = 1.2 V
IQCC
Quiescent V CC Supply Current
VIN = 0 or 5 V, V SDT = 1.2 V
20
20
V
µs
50
µA
75
150
µA
350
1000
µA
Input Characteristics
V IH
High Logic level Input Voltage
V IL
Low Logic Level Input Voltage
2.7
IIN+
Logic Input High Bias Current
V IN = 5 V
IIN-
Logic Input Low Bias Current
V IN = 0 V
V DT
V DT Dead Time Setting Range
V
0.8
V
10
50
µA
0
2
µA
5.0
V
1.2
V SD
V SD Shutdow n Threshold Voltage
RSDT
High Logic Level Resistance for /SD /DT
V SDT = 5 V
ISDT-
Low Logic Level Input bias Current for
/SD /DT
V SDT = 0 V
100
0.8
1.2
V
500
1100
kΩ
1
2
µA
Output Characteristics
V OH(HO)
High Level Output Voltage (V CC - V HO)
IO = 0
0.1
V
V OL(HO)
Low Level Output Voltage (V HO)
IO = 0
0.1
V
IO+(HO)
Output High, Short-Circuit Pulse Current
250
300
mA
IO-(HO)
Output Low , Short-Circuit Pulse Current
500
600
mA
ROP(HO)
RON(HO)
60
Equivalent Output Resistance
30
Ω
V OH(LO)
High Level Output Voltage (V B – V LO)
IO = 0
0.1
V
V OL(LO)
Low Level Output Voltage (V LO)
IO = 0
0.1
V
IO+(LO)
Output High, Short-Circuit Pulse Current
250
IO-(LO)
Output Low , Short-Circuit Pulse Current
500
ROP(LO)
RON(LO)
mA
mA
60
Equivalent Output Resistance
30
www.onsemi.com
5
Ω
FAN7080-GF085 — Half Bridge Gate Driver
Electrical Characteristics
Unless otherw ise specified -40°C ≤ TA ≤ 125°C, V CC = 15 V, V BS=15 V, V S = 0 V, CL =1 nF
Symbol
Parameter
tON
Turn-On Propagation Delay
tOFF
Turn-Off Propagation Delay
(7)
Conditions
Min.
Typ.
Max.
Unit
V S=0 V
750
1500
ns
V S=0 V
130
250
ns
tR
Turn-On Rise Time
40
150
ns
tF
Turn-Off Fall Time
25
400
ns
DT
Dead Time, LS Turn-off to HS Turn-on
and HS Turn-on to LS Turn-off
V IN = 0 or 5 V at VDT = 1.2 V
250
650
1200
V IN = 0 or 5 V at VDT = 1.2 V
1600
2100
2600
35
110
ns
DT1 – DT2 at VDT = 1.2 V
MDT
Dead Time Matching Time
MTON
Delay Matching, HS and LS Turn-on
VDT = 1.2 V
25
110
ns
MTOFF
Delay Matching, HS and LS Turn-off
VDT = 1.2 V
15
60
ns
180
330
ns
tSD
FS1
FS2
DT1 – DT2 at VDT = 3.3 V
Shutdow n Propagation Delay
Sw itching Frequency
300
V CC = V BS = 20 V
200
V CC = V BS = 5.5 V
200
Notes:
7. tON includes DT
Typical Waveforms
Figure 5.
Figure 6.
Figure 7.
Short Pulse Width Test Circuit and Pulse Width Waveform
Abnorm al Output Waveform w ith Pulse
Width
Recom m endation of Pulse w idth Output
Waveform
www.onsemi.com
6
Figure 8.
Pulse Width vs. VDT
ns
Khz
FAN7080-GF085 — Half Bridge Gate Driver
Dynamic Electrical Characteristics
IN
SD/DT
HO
LO
Figure 9.
Input/Output Tim ing Diagram
Figure 10. Dead Tim e vs. V DT
(V CC=V BS=15 V, -40°C < TJ < 125°C)
SD
50%
tsd
HO
LO
Figure 11.
Sw itching Tim e Waveform Definitions
90%
Figure 12.
Shutdow n Waveform Definitions
Figure 14.
Dead Tim e Waveform Definitions
PWM(LO)
50%
50%
PWM(HO)
LO
HO
10%
MTON
MTOFF
90%
LO
Figure 13.
HO
Delay Matching Waveform Definitions
www.onsemi.com
7
FAN7080-GF085 — Half Bridge Gate Driver
Typical Performance Characteristics
Figure 15. Turn-on Delay Tim e of HO vs.
Tem perature (V CC=V BS=15 V, CL=1 nF)
Figure 16. Turn-on Delay Tim e of HO vs. V BS Supply
Voltage (V CC=15 V, CL=1 nF, TA=25°C)
Figure 17. Turn-on Delay Tim e of LO vs.
Tem perature (V CC=V BS=15 V, CL=1 nF)
Figure 18. Turn-on Delay Tim e of LO vs. V BS Supply
Voltage (V CC=15 V, CL=1 nF, TA=25°C)
Figure 19. Turn-off Delay Tim e of HO vs.
Tem perature (V CC=V BS=15 V, CL=1 nF)
Figure 20. Turn-off Delay Tim e of HO vs. V BS Supply
Voltage (V CC=15 V, CL=1 nF, TA=25°C)
www.onsemi.com
8
FAN7080-GF085 — Half Bridge Gate Driver
Typical Performance Characteristics
Figure 21. Turn-off Delay Tim e of LO vs.
Tem perature (V CC=V BS=15 V, CL=1 nF)
Figure 22. Turn-off Delay Tim e of LO vs. V BS Supply
Voltage (V CC=15 V, CL=1 nF, TA=25°C)
Figure 23. Turn-on Rise Tim e of HO vs.
Tem perature (V CC=V BS=15 V, CL=1 nF)
Figure 24. Turn-on Rise Tim e of HO vs. V BS Supply
Voltage (V CC=15 V, CL=1 nF, TA=25°C)
Figure 25. Turn-on Rise Tim e of LO vs.
Tem perature (V CC=V BS=15 V, CL=1 nF)
Figure 26. Turn-on Rise Tim e of LO vs. V BS Supply
Voltage (V CC=15 V, CL=1 nF, TA=25°C)
www.onsemi.com
9
FAN7080-GF085 — Half Bridge Gate Driver
Typical Performance Characteristics
Figure 27. Turn-off Fall Tim e of HO vs.
Tem perature (V CC=V BS=15 V, CL=1 nF)
Figure 28. Turn-off Fall Tim e of HO vs. V BS Supply
Voltage (V CC=15 V, CL=1 nF, TA=25°C)
Figure 29. Turn-off Fall Tim e of LO vs.
Tem perature (V CC=V BS=15 V, CL=1 nF)
Figure 30. Turn-off Fall Tim e of LO vs.
Tem perature (V CC=V BS=15 V, CL=1 nF)
Figure 31.
Figure 32.
Logic Low Input Voltage vs.
Tem perature
www.onsemi.com
10
Logic High Input Voltage vs.
Tem perature
FAN7080-GF085 — Half Bridge Gate Driver
Typical Performance Characteristics
Figure 33. High Level Output of HO vs.
Tem perature (V CC=V BS=15 V)
Figure 34.
High Level Output of HO vs. V BS Supply
Voltage (V CC=15 V, TA=25°C)
Figure 35. High Level Output of LO vs.
Tem perature (V CC=V BS=15 V)
Figure 36.
High Level Output of LO vs. V BS Supply
Voltage (V CC=15 V, TA=25°C)
Figure 37. Low Level Output of HO vs.
Tem perature (V CC=V BS=15 V)
Figure 38.
Low Level Output of HO vs. V BS Supply
Voltage (V CC=15 V, TA=25°C)
www.onsemi.com
11
FAN7080-GF085 — Half Bridge Gate Driver
Typical Performance Characteristics
Figure 39. Low Level Output of LO vs.
Tem perature (V CC=V BS=15 V)
Figure 40.
Low Level Output of LO vs. V CC Supply
Voltage (V CC=15 V, TA=25°C)
Figure 41. Offset Supply Leakage Current vs.
Tem perature (V CC=V BS=600 V)
Figure 42. Offset Supply Leakage Current vs.
V B Boost Voltage(V CC=15 V, TA=25°C)
Figure 43. V BS Supply Current vs.
Tem perature (V BS=15 V)
Figure 44. V CC Supply Current vs.
Tem perature (V CC=15 V)
www.onsemi.com
12
FAN7080-GF085 — Half Bridge Gate Driver
Typical Performance Characteristics
Figure 46. Logic Low Input Current vs.
Tem perature (V IN=5 V)
Figure 45. Logic High Input Current vs.
Tem perature (V IN=5 V)
Figure 47.
V CC Under-Voltage Threshold (+) vs.
Tem perature
Figure 48.
V CC Under-Voltage Threshold (-) vs.
Tem perature
Figure 49.
V BS Under-Voltage Threshold (+) vs.
Tem perature
Figure 50.
V BS Under-Voltage Threshold (-) vs.
Tem perature
www.onsemi.com
13
FAN7080-GF085 — Half Bridge Gate Driver
Typical Performance Characteristics
Figure 51. Output Source Current of HO vs.
Tem perature (V CC=V BS=15 V)
Figure 52. Output Sink Current of HO vs.
Tem perature (V CC=V BS=15 V
Figure 53. Output Source Current of LO vs.
Tem perature (V CC=V BS=15 V)
Figure 54. Output Sink Current of LO vs.
Tem perature (V CC=V BS=15 V
Figure 55.
Logic Low Input Current of SD/DT vs.
Tem perature
Figure 56.
www.onsemi.com
14
Shutdow n Threshold Voltage vs.
Tem perature
FAN7080-GF085 — Half Bridge Gate Driver
Typical Performance Characteristics
Figure 58. Deadtim e Matching Tim e vs.
Tem perature (V CC=V BS=15 V, V DT=1.2 V)
Figure 57. Deadtim e vs. Tem perature
(V CC=V BS=15 V, V DT=1.2 V)
Figure 59.
Turn-on Delay Matching vs. Tem perature
(V CC=V BS=15 V, V DT=1.2 V)
Figure 61.
Shutdow n Propagation Delay vs.
Tem perature
Figure 60. Turn-off Delay Matching vs.
Tem perature (V CC=V BS=15 V, V DT=1.2 V)
Figure 62. Maxim um vs. Negative Offset Voltage
vs. Tem perature (V CC=V BS=15 V)
www.onsemi.com
15
FAN7080-GF085 — Half Bridge Gate Driver
Typical Performance Characteristics
4.90±0.10
0.65
A
(0.635)
5
8
B
1.75
6.00±0.20
PIN ONE
INDICATOR
5.60
3.90±0.10
1
4
1.27
1.27
0.25
C B A
LAND PATTERN RECOMMENDATION
SEE DETAIL A
0.175±0.075
0.22±0.03
C
1.75 MAX
0.10
0.42±0.09
OPTION A - BEVEL EDGE
(0.86) x 45°
R0.10
GAGE PLANE
R0.10
OPTION B - NO BEVEL EDGE
0.36
NOTES:
8°
0°
SEATING PLANE
0.65±0.25
(1.04)
DETAIL A
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS.
D) LANDPATTERN STANDARD: SOIC127P600X175-8M
E) DRAWING FILENAME: M08Arev16
SCALE: 2:1
8-Lead, Sm all Outline Integrated Circuit (SOIC), JEDEC MS-012, .150 inch Narrow Body
www.onsemi.com
16
FAN7080-GF085 — Half Bridge Gate Driver
Physical Dimensions
FAN7080-GF085 — Half Bridge Gate Driver
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the
United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A
listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make
changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for
use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or
any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax : 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: [email protected]
N. Amer ican Technical Support: 800-282-9855 Toll Free
USA/Canada.
Eur ope, Middle East and Afr ica Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81-3-5817-1050
www.onsemi.com
17
ON Semiconductor Website: www.onsemi.com
Or der Litserature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative