STL5NK65Z N-CHANNEL 650V - 1.5Ω - 4.2A PowerFLAT™ Zener-Protected SuperMESH™Power MOSFET PRELIMINARY DATA TYPE STLNK65Z ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID (1) Pw (1) 650 V < 1.8 Ω 4.2 A 75 W TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. PowerFLAT™(5x5) (Chip Scale Package) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ LIGHTING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STL5NK65Z L5NK65Z PowerFLAT™ (5x5) TAPE & REEL April 2002 1/6 STL5NK65Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Parameter Value Unit Drain-source Voltage (VGS = 0) 650 V Drain-gate Voltage (RGS = 20 kΩ) 650 V VGS Gate- source Voltage ± 30 V ID (2) Drain Current (continuous) at TC = 25°C (Steady State) Drain Current (continuous) at TC = 100°C 0.76 0.48 A A IDM (2) 3 A PTOT (2) Total Dissipation at TC = 25°C (Steady State) 2.5 W PTOT (1) Total Dissipation at TC = 25°C (Steady State) 75 W Derating Factor (2) 0.02 W/°C Peak Diode Recovery voltage slope 4.5 V/ns –55 to 150 °C dv/dt (4) Tstg Tj Drain Current (pulsed) Storage Temperature Max. Operating Junction Temperature THERMAL DATA Symbol Rthj-F Parameter Thermal Resistance Junction-Foot (Drain) Rthj-amb (2) Thermal Resistance Junction-ambient Note: 1. 2. 3. 4. Max. Unit 1.67 °C/W 50 °C/W The value is rated according to Rthj-F. When Mounted on FR-4 Board of 1inch2, 2 oz Cu Pulse width limited by safe operating area ISD<4.2A, di/dt<300A/µs, VDD<V(BR)DSS , TJ<TJMAX AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 4.2 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 190 mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/6 STL5NK65Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2.1 A 1.5 1.8 Ω Typ. Max. Unit V(BR)DSS 650 Unit 3 V DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS = 10 V, ID = 2.1 A VDS = 25V, f = 1 MHz, VGS = 0 Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480 V Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 5 S 680 80 17 pF pF pF 98 pF 4 Ω SWITCHING Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tf td(off) tf Turn-on Delay Time Fall Time Turn-off Delay Time Fall Time VDD = 325 V, ID = 2.1 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 20 15 140 40 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 520V, ID = 4.2 A, VGS = 10V 25 4.4 13.7 35 nC nC nC Typ. Max. Unit 0.76 3 A A 1.6 V ns ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 0.76 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4.2 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Min. 375 1.76 10 ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/6 STL5NK65Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STL5NK65Z PowerFLAT™(5x5) MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. A 0.90 A1 MIN. TYP. MAX. 1.00 0.035 0.039 0.02 0.05 0.001 0.002 b 0.43 0.51 0.58 0.017 0.020 0.023 c 0.64 0.71 0.79 0.025 0.028 0.031 D 5.00 0.197 E 5.00 0.197 E2 e 2.49 2.57 1.27 2.64 0.098 0.101 0.104 0.050 5/6 STL5NK65Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 6/6