GeneSiC GR80MT12D Silicon carbide power mosfet Datasheet

GR80MT12D
1200 V SiC MOSFET
Silicon Carbide Power MOSFET
VDS
ID @25 °C
RDS(ON)
N-Channel Enhancement Mode
Features
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=
=
=
1200 V
36 A
80 mΩ
Package
150 °C Maximum Operating Temperature
High blocking voltage with low On-resistance
Low output capacitance and gate charge
Normally-OFF operation at all temperatures
Halogen free, RoHS complaint
12
TO-247-3L
Advantages
Applications
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Reduced switching losses and minimum gate ringing
High system efficiency
Increased power density
Increased system switching frequency
3
EV Battery Chargers
Switched-Mode
Mode Power Supply (SMPS)
Solar Inverters
Renewable Energy
Motor Drives
Induction Heating
Uninterruptible Power Supply (UPS)
Maximum Ratings at TC = 25 °C, unless otherwise specified
Parameter
Drain - Source Voltage
Gate - Source Voltage (dynamic) 1
Gate - Source Voltage (static) 2
Operating Junction and Storage
Temperature
Symbol
VDSmax
VGSmax
VGSop
Conditions
VGS = 0 V, ID = 10 µA
AC (f > 1 Hz)
Static
TJ, Tstg
Value
1200
-10/+25
10/+25
-5/+20
5/+20
Unit
V
V
V
-55
55 to +150
°C
Electrical Characteristics at T C = 25 °C, unless otherwise specified
Parameter
Drain - Source Breakdown Voltage
Gate Threshold Voltage
Drain - Source Leakage Current
Gate - Source Leakage Current
Drain - Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
V(BR)DSS
VGS = 0 V, ID = 10 μA
VDS = VGS, ID = 5 mA
VDS = VGS, ID = 5 mA , TJ = 150 °C
VDS = 1200 V, VGS = 0 V
VDS = 1200 V, VGS = 0 V, TJ = 150 °C
VGS = 20 V, VDS = 0 V
VGS = 20 V, ID = 20 A
VGS = 20 V, ID = 20 A, TJ = 150 °C
VGS = 0 V, VDS = 1000 V
f = 1 MHz
VAC = 25 mV
VGS(th)
IDSS
IGSS
RDS(on)
Ciss
Coss
Crss
Min.
1200
Value
Typical
Max.
Unit
V
2.6
2.
1.8
1.
0.2
0.
4
V
μA
100
80
110
1000
000
85
7
nA
mΩ
pF
pF
pF
Reverse Diode Characteristics at T C = 25 °C, unless otherwise specified
Parameter
Diode Forward Voltage
Continuous Diode Forward Current
2018 Mar. Rev1.1
Symbol
VSD
IS
Conditions
Min.
VGS = -4 V, ID = 10 A
VGS = -4 V, ID = 10 A, TJ = 150 °C
VGS = -4 V
http://www.genesicsemi.com
http://www.genesicsemi.com/sic_transistors/mosfet/
Value
Typical
3.3
3.1
Max.
Unit
V
40
A
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