AP9971GS
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
BVDSS
60V
RDS(ON)
36mΩ
ID
G
25A
S
Description
AP4604 series are from Advanced Power innovated design and
AP9971
silicon
and
silicon
process
process
technology
technology
to toachieve
achievethe
the lowest
lowest possible onon-resistance
resistance
andand
fastfast
switching
switching
performance.
performance.
It provides
It provides
the designer
the
with an extreme
for device
use in for
a wide
of power
designer
with anefficient
extremedevice
efficient
use range
in a wide
range
of power applications.
applications.
The TO-220
preferred
for for
all commercialTO-263 package
packageis iswidely
widely
preferred
all commercialindustrial through
throughholehole
applications.
lowresistance
thermal and
applications.
The lowThe
thermal
resistance
and
low
packagetocost
contribute popular
to the worldwide
low package
cost
contribute
the worldwide
package.
popular package.
G
D
S
TO-263(S)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
.
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
25
A
ID@TC=100℃
Drain Current, VGS @ 10V
16
A
80
A
39
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
3
Value
Units
3.2
℃/W
40
℃/W
1
201508271
AP9971GS
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
60
-
-
V
VGS=10V, ID=18A
-
-
36
mΩ
VGS=4.5V, ID=12A
-
-
50
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=18A
-
35
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=18A
-
16
28
nC
Qgs
Gate-Source Charge
VDS=48V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
9
-
ns
tr
Rise Time
ID=18A
-
32
-
ns
td(off)
Turn-off Delay Time
RG=1.2Ω
-
22
-
ns
tf
Fall Time
VGS=10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
1250 2000
pF
Coss
Output Capacitance
VDS=25V
Crss
Rg
-
160
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
120
-
pF
Gate Resistance
f=1.0MHz
-
1.8
3.6
Ω
Min.
Typ.
IS=25A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=18A, VGS=0V,
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971GS
100
100
o
60
V G =4.0V
40
60
5.0V
40
V G =4.0V
20
20
0
0
0
2
4
6
8
10
0
12
4
8
12
16
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
2.4
I D =18A
I D =18A
V G =10V
T C =25 o C
30
.
Normalized RDS(ON)
2.0
40
RDS(ON) (mΩ)
10V
8.0V
7.0V
6.0V
80
ID , Drain Current (A)
80
ID , Drain Current (A)
o
T C =150 C
10V
80V
7.0V
6.0V
5.0V
T C = 25 C
1.6
1.2
20
0.8
0.4
10
2
4
6
8
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
20
I D =250uA
1.6
Normalized VGS(th)
IS(A)
16
12
T j =150 o C
T j =25 o C
8
4
1.2
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9971GS
f=1.0MHz
10
3000
VGS , Gate to Source Voltage (V)
I D =18A
V DS =48V
2500
8
C (pF)
2000
6
1500
4
C iss
1000
2
500
C oss
C rss
0
0
0
8
16
24
0
32
20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
60
80
Fig 8. Typical Capacitance Characteristics
100
10
100us
1
.
1ms
10ms
100ms
0.1
T C =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthjc)
1
Operation in this area
limited by RDS(ON)
ID (A)
40
V DS ,Drain-to-Source Voltage (V)
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
28
60
V DS =5V
T j =25 o C
ID , Drain Current (A)
ID , Drain Current (A)
50
21
14
T j =150 o C
40
30
20
7
10
0
0
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP9971GS
50
100
T j =25 o C
40
PD, Power Dissipation(W)
RDS(ON) (mΩ)
80
60
V GS =5V
40
30
20
10
20
V GS =10V
0
0
0
20
40
60
80
0
100
50
100
150
T C , Case Temperature( o C)
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
2
I D =1mA
Normalized BVDSS
1.6
1.2
.
0.8
0.4
0
-100
-50
T
0
j
50
100
150
, Junction Temperature ( o C)
Fig 15. Normalized BVDSS v.s. Junction
5
AP9971GS
MARKING INFORMATION
9971GS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6