ON NIMD6001ANR2G Dual n-channel driver Datasheet

NIMD6001N, NIMD6001AN
Dual N-Channel Driver with
Diagnostic Output
60 V, 3 A, 110 mW
NIMD6001N/AN is a dual 3 Amp low-side switch with an
integrated common disable input and drain diagnostic output. Pulling
the Disable pin low will override any applied gate voltages and turn off
both FET switches. Should either Drain-Source voltage exceed
approximately 50 V, a logic 1 (> 3 V) will be asserted on the
Diagnostic/Feedback pin. Internal isolation diodes permit the Disable
and Diagnostic/ Feedback pins of multiple devices to be
interconnected in a “wired-OR” configuration without additional
components.
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3.0 AMPERES
60 VOLTS
RDS(on) = 110 mW
SOIC−8
CASE 751
Features
MARKING DIAGRAM
RDSON 110 mW Maximum at VGS = 10 V
Avalanche Energy Specified
Gate Drive Disable Input
Drain-Source Voltage Diagnostic Feedback Output
Electrically Isolated Drains for Low Crosstalk
Internal Resistors Limit Peak Transient gate Current
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Source 1
Gate 1
Source 2
Gate 2
• Automotive Injector Driver
• Solenoid / Relay Driver
Rating
Symbol
Value
Unit
Drain−to−Source Voltage (DC, sustained)
VDSS
60
Vdc
Gate−to−Source Voltage
VGS
"20
Vdc
Single Pulse Drain-to-Source
Avalanche Energy
VDD = 60 V; VGS = 10 V; IPK = 2.6 A;
L = 76 mH; Start Tj = 25°C
Operating Junction Temperature
Storage Temperature
ID
November, 2011 − Rev. 6
3
4
6
5
Drain 1
Disable
Drain 2
Diag/Fbk
1
8
2
7
3
6
4
5
A
3.3
3.0
ID
10
A
EAS
258
mJ
TJ
−55 − 150
°C
TSTG
−55 − 150
°C
INTERNAL DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2011
7
(Note: Microdot may be in either location)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Single Pulse Drain Current
Pulse duration = 80 ms
8
2
(Top View)
D6001x = Specific Device Code
x = N or A
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
Applications
Continuous Drain Current
VGS = 10 V, RqJA = 55°C/W
VGS = 5.0 V, RqJA = 55°C/W
1
D6001x
AYWWG
G
•
•
•
•
•
•
•
•
1
ORDERING INFORMATION
Device
Package
Shipping
NIMD6001NR2G
SOIC−8
(Pb−Free)
2500/Tape & Reel
NIMD6001ANR2G
SOIC−8
2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NIMD6001N/D
NIMD6001N, NIMD6001AN
PIN DESCRIPTIONS
Pin #
Symbol
Description
1
S1
FET 1 Source and Body
2
G1
FET 1 Gate
3
S2
FET 2 Source and Body
4
G2
FET 2 Gate
5
Diag/Fbk
6
D2
7
Disable
8
D1
Diagnostic Feedback − This pin will be logic high when either FET Drain-Source voltage exceeds the Drain
Diagnostic threshold.
FET 2 Drain
Gate Disable − Pull this pin low to disable both FETs. A logic low will override voltage applied to G1 or G2.
FET 1 Drain
THERMAL RESISTANCE
Parameter
Symbol
Value
Units
Junction-to-Ambient − min. pad footprint (Notes 1 and 2)
RqJA
96
°C/W
Junction-to-Ambient − 1″ Cu pad (Notes 1 and 3)
RqJA
75
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Typ
V(BR)DSS
VGS = 0 V; ID = 5 mA
60
67
Zero Gate Voltage Drain Current
(Note 1)
IDSS
VGS = 0 V; VDS = 15 V
VGS = 0 V; VDS = 15 V; TA = 150°C
Gate Input Current
IGSS
VGS = ±20 V; VDS = 0 V
Gate Threshold Voltage
VGS(TH)
VDS = VGS; ID = 250 mA
Static Drain-to-Source On-Resistance
RDS(ON)
VGS = 10 V; ID = 3.3 A
Static Drain-to-Source On-Resistance
RDS(ON)
VGS = 5 V; ID = 3.0 A
Parameter
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
10
80
20
250
mA
−100
±25
+100
nA
1.0
1.7
3.0
60
110
mW
72
130
mW
150
175
pF
150
170
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS (Note 1)
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
Total Gate Charge
25
30
RG
8
15
kW
Qg(TOT)
8.3
9.0
nC
1.1
1.6
4.2
5
Gate-to-Source Gate Charge
Qgs
Gate-to-Drain Miller Charge
Qgd
1.
2.
3.
4.
VGS = 0 V; VDS = 15 V;
f = 75 kHz
VGS = 0 V to 5 V; VDD = 30 V;
ID = 3.3 A; IG = 1.0 mA,
These values are established by statistical characterization and may not be tested.
Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 40 sq. mm; 1 oz.)
Surface-mounted on FR4 board using 1 sq. inch heat spreader (Cu area = 625 sq. mm, 2 oz.)
Refer to Figure 1 for definition of switching characteristics symbols.
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2
NIMD6001N, NIMD6001AN
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
6.0
8.0
ms
SWITCHING CHARACTERISTICS (Notes 1 and 4)
Turn-On Time
T(on)
Turn-On Delay
Td(on)
Rise Time
Tr
1.7
VGS = 10 V; VDD = 30 V;
ID = 3.3 A, Ext. RGS = 47 W
3.9
Turn-Off Time
T(off)
24
Turn-Off Delay
Td(off)
15
Tf
9.0
Fall Time
28
BODY DIODE
VSD
VGS = 0 V, ISD = 3.3 A
1.25
V
VFBK
VDS = 35 V,
RFBK-SOURCE = 51 kW
1.7
V
VFBK(HI)
VDS = 60 V,
RFBK-SOURCE = 51 kW
3.0
5.5
V
VDS threshold voltage for logical High
VDSFBK(HI)
Ramp VDS positive until
VFBK = 3.5 V
45
65
V
VDS threshold voltage for logical Low
VDSFBK(LOW)
Ramp VDS negative until
VFBK = 0.8 V
25
45
V
Gate Drive Disable Input Voltage,
Gate Enable
VDIS(HI)
VDIS ≥ 3.0 V, VGS = 5 V,
ID = 3.0 A
3
Gate Drive Disable Input Voltage,
Gate Disable
VDIS(LOW)
VDIS ≤ 0.4 V, VGS = VDS = 10 V,
ID ≤ 250 mA; Tj = 150°C (Note 1)
Source-Drain Forward On Voltage
0.85
DIAGNOSTIC FEEDBACK (Note 1)
Feedback voltage
Feedback Logical High voltage
DISABLE (Note 1)
1.
2.
3.
4.
These values are established by statistical characterization and may not be tested.
Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 40 sq. mm; 1 oz.)
Surface-mounted on FR4 board using 1 sq. inch heat spreader (Cu area = 625 sq. mm, 2 oz.)
Refer to Figure 1 for definition of switching characteristics symbols.
Figure 1. Switching Characteristics Waveforms and Symbols
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3
V
0.4
V
NIMD6001N, NIMD6001AN
TYPICAL ELECTRICAL CHARACTERISTICS
7
10
5
4
3.0 V
3
2
1
RDS(on), DRAIN−SOURCE RESISTANCE (W)
0
8
TJ = 125°C
6
TJ = 25°C
4
2
TJ = −40°C
2.5 V
0
0.5
1.0
1.5
0
2.0
1.5
3.0
3.5
4.0
Figure 2. Drain Current vs. Drain−Source
Voltage and Gate−Source Voltage
Figure 3. Transfer Function (pulsed). Pulse
duration = 80 ms, duty cycle < 0.5%; VDS = 2 V
100
VGS = 5 V, ID = 3 A
80
VGS = 10 V, ID = 3.3 A
60
40
20
0
−40 −20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
1.0
0.9
0.8
IS = 3 A
0.7
0.6
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Drain−Source On Resistance vs.
Junction Temperature
Figure 5. Body Diode Forward Voltage vs.
Junction Temperature
5
2.5
VFBK, DIAGNOSTIC/FEEDBACK
VOLTAGE (V)
3.0
ID, DRAIN CURRENT (mA)
2.5
VGS, GATE−SOURCE VOLTAGE (V)
120
TJ = 25°C
2.0
1.5
1.0
0.5
0
2.0
VDS, DRAIN−SOURCE VOLTAGE (V)
VSD, SOURCE−DRAIN FORWARD VOLTAGE (V)
ID, DRAIN CURRENT (A)
6
ID, DRAIN−CURRENT (A)
VGS = 3.5 V
0
10
20
30
40
50
60
4
3
2
1
0
70
TJ = 25°C
0
10
20
30
40
50
60
VDS, DRAIN−SOURCE VOLTAGE (V)
VDS, DRAIN−SOURCE VOLTAGE (V)
Figure 6. Off−State Drain Current vs.
Drain−Source Voltage (includes feedback
network current)
Figure 7. Diagnostic Feedback Voltage vs.
Drain−Source Voltage
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4
70
NIMD6001N, NIMD6001AN
10
1000
Emax (mJ)
ILmax (A)
TJstart = 25°C
TJstart = 150°C
1
TJstart = 25°C
100
TJstart = 150°C
10
10
100
10
100
LOAD INDUCTANCE (mH)
LOAD INDUCTANCE (mH)
Figure 8. Single Pulse Maximum Switch−off
Current vs. Load Inductance
Figure 9. Single Pulse Maximum Switching
Energy vs. Load Inductance
Figure 10. Single Pulse Peak Drain Current and
Avalanche Energy Test Circuit
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NIMD6001N, NIMD6001AN
TYPICAL THERMAL RESPONSE CHARACTERISTICS
RqJA, PEAK JUNCTION THERMAL
TRANSIENT RESPONSE (°C/W)
1000
100
D = 0.8
0.5
10
0.2
0.1
1
0.04
0.02
0.01
0.1
SINGLE PULSE
0.00001
0.0001
0.001
0.1
0.01
ON−TIME PULSE WIDTH (s)
1
10
100
1000
100
1000
100
1000
Figure 11. Single Channel Active; Mounted on Minimum−Pad Board
RqJA, PEAK JUNCTION THERMAL
TRANSIENT RESPONSE (°C/W)
1000
100
10
1
0.1
D = 0.8
0.5
0.2
0.1
0.04
0.02
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
ON−TIME PULSE WIDTH (s)
1
10
Figure 12. Single Channel Active; Mounted on 1 Sq. Inch Copper Spreader
RqJA, PEAK JUNCTION THERMAL
TRANSIENT RESPONSE (°C/W)
1000
100
D = 0.8
0.5
0.2
0.1
10
0.04
0.02
0.01
1
0.1
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
ON−TIME PULSE WIDTH (s)
1
10
Figure 13. Both Channels Active; Mounted on Minimum−Pad Board
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NIMD6001N, NIMD6001AN
TYPICAL THERMAL RESPONSE CHARACTERISTICS
RqJA, PEAK JUNCTION THERMAL
TRANSIENT RESPONSE (°C/W)
1000
100
10
1
0.1
D = 0.8
0.5
0.2
0.1
0.04
0.02
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
ON−TIME PULSE WIDTH (s)
1
10
100
1000
100
1000
100
1000
Figure 14. Both Channels Active; Mounted on 1 Sq. Inch Copper Spreader
RqJA, PEAK JUNCTION THERMAL
TRANSIENT RESPONSE (°C/W)
1000
100
D = 0.8
0.5
0.2
0.1
10
0.04
0.02
0.01
1
0.1
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
ON−TIME PULSE WIDTH (s)
1
10
Figure 15. Channels Alternatively Active; Mounted on Minimum−Pad Board
RqJA, PEAK JUNCTION THERMAL
TRANSIENT RESPONSE (°C/W)
1000
100
10
1
0.1
D = 0.8
0.5
0.2
0.1
0.04
0.02
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
ON−TIME PULSE WIDTH (s)
1
10
Figure 16. Channels Alternatively Active; Mounted on 1 Sq. Inch Copper Spreader
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7
NIMD6001N, NIMD6001AN
TYPICAL APPLICATION CIRCUIT
C1
C2
C3
C4
+VDD
FBK
D1
S1
Injector 1
Disable
G1
D2
S2
Injector 4
U1
G2
C1
Diag
NIMD6001/A
S1
D1
Injector 2
C4
C2
C3
Disable
G1
CONTROLLER
FBK
D2
S2
Injector 3
U2
G2
Diag
NIMD6001/A
Master
Disable
Figure 17. 4 Cylinder Engine Fuel Injection
• 4-Cycle engine; 1 injector pulse during intake stroke
• To optimize transient thermal resistance of the
• Cylinder firing order is 1-3-4-2
• The coincident FBK pulse will be missing if any
NIMD6001/A devices, the injector drive pulses are
alternated between U1 and U2.
injector is open or shorted.
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8
NIMD6001N, NIMD6001AN
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
Y
M
M
1
4
−Y−
K
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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NIMD6001N/D
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