NOT RECOMMENDED FOR NEW DESIGN USE DMN62D1LFD DMN62D0LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) Max ID TA = +25°C 2Ω @ VGS = 4V 310mA 2.5Ω @ VGS = 2.5V 295mA BVDSS 60V Features and Benefits NEW PRODUCT Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: X1-DFN1212-3 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiPdAu over Copper leadframe. Solderable per MILSTD-202, Method 208 e4 Terminal Connections: See Diagram Weight: 0.005 grams (Approximate) DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Drain G pin S Body Diode D Gate G ESD PROTECTED Bottom View Top View Gate Protection Diode Pin-Out Top View Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN62D0LFD-7 DMN62D0LFD-13 Notes: Compliance Standard Standard Case X1-DFN1212-3 X1-DFN1212-3 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information K63 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) K63 YM Date Code Key Year 2007 Code U Month Code Jan 1 2008 V Feb 2 DMN62D0LFD Document number: DS36359 Rev. 3 - 3 2009 W Mar 3 2010 X Apr 4 2011 Y May 5 2012 Z Jun 6 2013 A Jul 7 1 of 6 www.diodes.com Aug 8 2014 B Sep 9 2015 C Oct O 2016 D Nov N 2017 E Dec D September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN62D1LFD DMN62D0LFD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V ID 310 260 mA IDM 1.0 A Symbol Max Unit PD 0.48 W RθJA 265 °C/W TJ, TSTG -55 to +150 °C TA = +25°C TA = +70°C Continuous Drain Current (Note 5) VGS = 4.0V Pulsed Drain Current (Note 6) (10µs Pulse, Duty Cycle = 1%) NEW PRODUCT Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage Symbol Min Typ Max Unit BVDSS 60 — — V VGS = 0V, ID = 250μA IDSS — — 1.0 μA VDS = 60V, VGS = 0V — — ±100 nA VGS = ±5V, VDS = 0V — — ±500 nA VGS = ±10V, VDS = 0V — — ±2.0 μA VGS = ±15V, VDS = 0V 0.6 — 1.0 V VDS = VGS, ID = 250μA — 1.3 2 — 1.4 2.5 — 1.8 3 IGSS Test Condition ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance VGS(TH) RDS(ON) VGS = 4V, ID = 100mA Ω VGS = 2.5V, ID = 50mA VGS = 1.8V, ID = 50mA — 2.4 — Forward Transfer Admittance |Yfs| — 1.8 — S VDS = 10V, ID = 200mA Diode Forward Voltage VSD — 0.8 1.3 V VGS = 0V, IS = 115mA Input Capacitance Ciss — 31 — Output Capacitance Coss — 4.3 — pF Reverse Transfer Capacitance Crss — 3.0 — VDS = 25V, VGS = 0V, f = 1.0MHz Gate Resistance Rg — 99 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 0.5 — Gate-Source Charge Qgs — 0.09 — nC Gate-Drain Charge VGS = 4.5V, VDS = 10V, ID = 250mA VGS = 1.5V, ID = 10mA DYNAMIC CHARACTERISTICS (Note 8) Qgd — 0.07 — Turn-On Delay Time tD(ON) — 2.6 — ns Turn-On Rise Time tR — 2.1 — ns Turn-Off Delay Time tD(OFF) — 18 — ns tF — 8.7 — ns Turn-Off Fall Time Notes: VGS = 10V, VDS = 30V, RL = 150Ω, RG = 25Ω, ID = 200mA 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN62D0LFD Document number: DS36359 Rev. 3 - 3 2 of 6 www.diodes.com September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN62D1LFD 0.5 DMN62D0LFD 0.5 VGS = 10V VDS = 5.0V ID, DRAIN CURRENT (A) 0.4 VGS = 4.0V VGS = 3.5V 0.3 VGS = 3.0V VGS = 2.5V 0.2 VGS = 2.0V VGS = 1.5V TA = 150°C TA = 85°C TA = 125°C 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 2.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ) ( E C N A T S IS E R -N O E C R U O S -N IA R D , )N 2.3 2.1 VGS = 2.5V 1.9 1.7 0 3.0 VGS = 4.5V 1.5 1.3 VGS = 10V 1.1 0.9 0 0.5 1.0 1.5 2.0 VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2.5 3.0 V GS = 4.5V TA = 150°C 2.5 TA = 125°C 2.0 TA = 85°C 1.5 TA = 25°C 1.0 TA = -55°C 0.5 O (S D 0.7 R 0.5 0 0.1 0.2 0.3 0.4 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.5 2.4 2.0 VGS = 4V ID = 200mA 1.6 VGS = 2.5V ID = 100mA 1.2 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMN62D0LFD Document number: DS36359 Rev. 3 - 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 0 T A = 25°C TA = -55°C VGS = 1.2V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 0.1 0.4 )A ( T N E 0.3 R R U C N IA 0.2 R D ,D I 0.1 ID, DRAIN CURRENT (A) VGS = 4.5V 0 0 0.1 0.2 0.3 0.4 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 0.5 3.0 2.5 VGS = 2 .5V ID = 100mA 2.0 VGS = 4 V ID = 200mA 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com September 2017 © Diodes Incorporated )V ( E G A T 1.0 L O V D L O H S 0.8 E R H T E T A G 0.6 , h) 0.4 ) A ( T N E R 0.3 R U C E C R 0.2 U O S ,S I 0.1 DMN62D0LFD IS, SOURCE CURRENT (A) 0.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 ID = 1mA ID = 250µA (tS G TA = 25°C V 0.4 -50 0 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Junction Temperature 100 0 0.3 0.6 0.9 1.2 1.5 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 VGS , GATE-SOURCE V GS GATE THRESHOLDVOLTAGE VOLTAGE (V) (V) CT, JUNCTION CAPACITANCE (pF) Ciss 10 Coss Crss f = 1MHz 1 0 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN USE DMN62D1LFD 8 4 2 0 40 VDS = 10V ID = 250mA 6 0 0.2 0.4 0.6 0.8 1.0 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 1.2 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 R JA(t) = r(t) * R JA R JA = 256°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Figure 11 Transient Thermal Resistance DMN62D0LFD Document number: DS36359 Rev. 3 - 3 4 of 6 www.diodes.com September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN62D1LFD DMN62D0LFD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1212-3 A A1 A3 X1-DFN1212-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 D 1.15 1.25 1.20 E 1.15 1.25 1.20 e 0.80 L 0.25 0.35 0.30 All Dimensions in mm Seating Plane D NEW PRODUCT e b1(2x) E L(3x) b Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1212-3 X Dimensions Value (in mm) C 0.80 X 0.42 X1 0.32 Y 0.50 Y1 0.50 Y2 1.50 Y X1 (2x) Y2 Y1 (2x) C DMN62D0LFD Document number: DS36359 Rev. 3 - 3 5 of 6 www.diodes.com September 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN62D1LFD DMN62D0LFD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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