Micross MIMMF1000Y010DK1 100v 1000a fred module rohs compliant Datasheet

MIMMF1000Y010DK1
100V 1000A FRED Module
RoHS Compliant
PRODUCT FEATURES
Ultrafast Reverse Recovery Time
Soft Reverse Recovery Characteristics
Low Reverse Recovery Loss
Low Forward Voltage
High Surge Current Capability
Low Inductance Package
APPLICATIONS
Inversion Welder
Uninterruptible Power Supply (UPS)
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
Power Factor Correction (PFC) Circuit
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
VR
Maximum D.C. Reverse Voltage
100
V
VRRM
Maximum Repetitive Reverse Voltage
100
V
TC=125°C, Per Diode
500
A
TC=125°C, Per Moudle
1000
A
TC=125°C, 20KHz, Per Moudle
700
A
RMS Forward Current
TC=125°C, Per Diode
700
A
Non-Repetitive Surge
1/2 Cycle , 50Hz, Sine
5000
A
Forward Current
1/2 Cycle , 60Hz, Sine
6000
A
TJ=45°C, t=10ms, 50Hz, Sine
125
KA2s
TJ=45°C, t=8.3ms, 60Hz, Sine
180
KA2s
2080
W
IF(AV)
IF(RMS)
IFSM
Average Forward Current
I2t
I2t (For Fusing)
PD
Power Dissipation
TJ
Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Torque
Module-to-Sink
Recommended(M6)
3~4.7
N·m
Torque
Module Electrodes
Recommended(M6)
3~4.7
N·m
RθJC
Thermal Resistance
Junction-to-Case, Per Diode
0.06
°C /W
92
g
Weight
MIMMF1000Y010DK1
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
VR=100V
--
--
1
mA
VR=100V, TJ=125°C
--
--
20
mA
IF=500A
--
1.0
1.30
V
IF=500A, TJ=125°C
--
--
1.25
V
IRM
Reverse Leakage Current
VF
Forward Voltage
trr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs
--
71
--
ns
trr
Reverse Recovery Time
VR=50V, IF=500A
--
220
--
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-200A/μs, TJ=25°C
--
31
--
A
trr
Reverse Recovery Time
VR=50V, IF=500A
--
300
--
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-200A/μs, TJ=125°C
--
50
--
A
800
400
600
300
trr (ns)
500
IF (A)
1000
TJ =125°C
200
400
TJ =25°C
0
0.5
200
400
600
800
1000
diF/dt(A/μs)
Figure2. Reverse Recovery Time vs diF/dt
VR=50V
TJ =125°C
12
IF=1000A
150
IF=500A
IF=250A
Qrr (μc)
IRRM (A)
0
15
VR=50V
TJ =125°C
200
9
100
50
3
400
600
1000
800
diF/dt(A/μs)
Figure3. Reverse Recovery Current vs diF/dt
200
IF=1000A
IF=500A
6
0
0
IF=500A
100
1
1.5
2.5
2
VF(V)
Figure1. Forward Voltage Drop vs Forward Current
250
IF=1000A
IF=250A
200
0
0
VR=50V
TJ =125°C
0
IF=250A
0
200
400
600
800
1000
diF/dt(A/μs)
Figure4. Reverse Recovery Charge vs diF/dt
MIMMF1000Y010DK1
1.5
1
1.2
-1
10
ZthJC (K/W)
0.9
Kf
trr
IRRM
0.6
Qrr
10-3
0.3
0.0
0
10-2
25
50
100 125 150
75
TJ (°C)
Figure5. Dynamic Parameters vs Junction Temperature
-4
10
Duty
0.5
0.2
0.1
0.05
Single Pulse
-1
10-4
10-3
10-2
10
1
Rectangular Pulse Duration (seconds)
Figure6. Transient Thermal Impedance
Dimensions (mm)
Figure7. Package Outline
Similar pages