IKB30N65EH5 Highspeedswitchingseries5thgeneration TRENCHSTOPTM5highspeedswitchingIGBTcopackedwithfullrated currentRAPID1antiparalleldiode FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQG •IGBTcopackedwithfullratedcurrentRAPID1fastantiparallel diode •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C PotentialApplications: •EnergyGeneration -SolarStringInverter -SolarMicroInverter •IndustrialPowerSupplies -IndustrialSMPS -IndustrialUPS •MetalTreatment -Welding •EnergyDistribution -EnergyStorage •Infrastructure–Charge -Charger G E ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 KeyPerformanceandPackageParameters Type IKB30N65EH5 Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 30A 1.65V 175°C K30EEH5 PG-TO263-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IC 55.0 35.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs - 90.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25°Cvaluelimitedbybondwire Tc=100°C IF 40.0 39.5 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTc=25°C PowerdissipationTc=100°C Ptot 188.0 94.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.80 K/W Diode thermal resistance, junction - case Rth(j-c) - - 1.00 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) - - 65 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) - - 40 K/W Datasheet 3 V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - VGE=15.0V,IC=30.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.65 1.85 1.95 2.10 - - 1.45 1.42 1.39 1.70 - 3.2 4.0 4.8 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=30.0A Tvj=25°C Tvj=125°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.30mA,VCE=VGE Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - 1400 50 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=30.0A - 39.5 - S V ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1800 - - 55 - - 7 - - 70.0 - nC - 7.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=30.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 24 - ns - 28 - ns - 159 - ns - 25 - ns - 0.87 - mJ - 0.30 - mJ - 1.17 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25°C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, RG(on)=22.0Ω,RG(off)=22.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 4 V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=22.0Ω,RG(off)=22.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. - 20 - ns - 16 - ns - 160 - ns - 27 - ns - 0.35 - mJ - 0.09 - mJ - 0.44 - mJ - 75 - ns - 0.70 - µC - 12.0 - A - -600 - A/µs - 57 - ns - 0.50 - µC - 14.0 - A - -570 - A/µs DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=30.0A, diF/dt=850A/µs Tvj=25°C, VR=400V, IF=15.0A, diF/dt=900A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 23 - ns - 29 - ns - 180 - ns - 20 - ns - 1.16 - mJ - 0.37 - mJ - 1.53 - mJ - 21 - ns - 16 - ns - 195 - ns - 21 - ns - 0.57 - mJ - 0.15 - mJ - 0.72 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=150°C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, RG(on)=22.0Ω,RG(off)=22.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=150°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, RG(on)=22.0Ω,RG(off)=22.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration DiodeCharacteristic,atTvj=150°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=150°C, VR=400V, IF=30.0A, diF/dt=850A/µs Tvj=150°C, VR=400V, IF=15.0A, diF/dt=850A/µs dirr/dt 6 - 110 - ns - 1.80 - µC - 23.5 - A - -700 - A/µs - 90 - ns - 1.30 - µC - 20.0 - A - -720 - A/µs V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration 200 60 180 50 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 160 140 120 100 80 60 40 30 20 40 10 20 0 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[°C] 90 80 80 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 70 VGE=18V 15V 12V 10V 50 8V 40 7V 6V 30 5V 20 125 150 175 VGE=18V 15V 60 12V 10V 50 8V 40 7V 6V 30 5V 20 4V 10 0 100 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 90 60 75 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 70 50 4V 10 0 1 2 3 4 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=25°C) Datasheet 0 1 2 3 4 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=150°C) 7 V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration 90 2.50 Tj=25°C Tj=150°C VCEsat,COLLECTOR-EMITTERSATURATION[V] 80 IC,COLLECTORCURRENT[A] 70 60 50 40 30 20 10 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 8.5 IC=7.5A IC=15A IC=30A 0 VGE,GATE-EMITTERVOLTAGE[V] 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 5. Typicaltransfercharacteristic (VCE=20V) Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 100 10 1 0 10 20 30 40 50 60 70 80 100 10 1 90 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG=22Ω,Dynamictestcircuitin Figure E) Datasheet 5 15 25 35 45 55 65 RG,GATERESISTOR[Ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=30A,Dynamictestcircuitin Figure E) 8 V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration 6.0 typ. t,SWITCHINGTIMES[ns] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr 100 10 1 25 50 5.5 75 100 125 150 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 175 0 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=30A,RG=22Ω,Dynamictestcircuitin Figure E) 50 75 100 125 150 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.3mA) 7 2.50 Eoff Eon Ets Eoff Eon Ets 2.25 E,SWITCHINGENERGYLOSSES[mJ] 6 E,SWITCHINGENERGYLOSSES[mJ] 25 Tvj,JUNCTIONTEMPERATURE[°C] 5 4 3 2 2.00 1.75 1.50 1.25 1.00 0.75 0.50 1 0.25 0 0 10 20 30 40 50 60 70 80 90 0.00 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG=22Ω,Dynamictestcircuitin Figure E) Datasheet 5 15 25 35 45 55 65 RG,GATERESISTOR[Ω] Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=30A,Dynamictestcircuitin Figure E) 9 V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration 1.8 2.00 Eoff Eon Ets 1.75 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.50 1.25 1.00 0.75 0.50 0.25 0.2 0.0 Eoff Eon Ets 25 50 75 100 125 150 0.00 200 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=30A,RG=22Ω,Dynamictestcircuitin Figure E) 300 350 400 450 500 Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=0/15V, IC=30A,RG=22Ω,Dynamictestcircuitin Figure E) 16 1E+4 130V 520V Cies Coes Cres 14 12 1000 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 250 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 8 6 100 4 10 2 0 0 10 20 30 40 50 60 70 1 80 QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=30A) Datasheet 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 10 V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration 1 Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 D=0.5 0.2 0.1 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 ri[K/W]: 9.3E-3 0.242715 0.373613 0.158334 0.014318 1.9E-3 τi[s]: 1.6E-5 3.4E-4 2.7E-3 0.014105 0.204769 2.877416 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 0.05 0.1 i: 1 2 3 4 5 6 ri[K/W]: 0.014545 0.309949 0.475571 0.182319 0.01682 2.2E-3 τi[s]: 1.6E-5 3.4E-4 2.6E-3 0.01432 0.201605 2.700794 1 0.001 1E-7 1E-6 tp,PULSEWIDTH[s] 0.01 0.1 1 2.00 Tj=25°C, IF = 30A Tj=150°C, IF = 30A 140 Tj=25°C, IF = 30A Tj=150°C, IF = 30A 1.75 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 0.001 Figure 18. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 150 130 120 110 100 90 80 70 1.50 1.25 1.00 0.75 0.50 0.25 60 600 700 800 900 1000 0.00 500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 19. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) Datasheet 1E-4 tp,PULSEWIDTH[s] Figure 17. IGBTtransientthermalimpedance (D=tp/T) 50 500 1E-5 600 700 800 900 1000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 20. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) 11 V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration 30.0 25.0 22.5 20.0 17.5 15.0 12.5 10.0 -200 -300 -400 -500 -600 -700 -800 7.5 5.0 500 Tj=25°C, IF = 30A Tj=150°C, IF = 30A -100 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irrm,REVERSERECOVERYCURRENT[A] 27.5 0 Tj=25°C, IF = 30A Tj=150°C, IF = 30A 600 700 800 900 -900 500 1000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalpeakreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 900 1000 1.9 1.8 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 800 2.0 Tj=25°C Tj=150°C 70 60 50 40 30 20 IF=15A IF=30A IF=60A 1.7 1.6 1.5 1.4 1.3 1.2 10 1.1 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 1.0 VF,FORWARDVOLTAGE[V] Figure 23. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 700 Figure 22. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 90 80 600 diF/dt,DIODECURRENTSLOPE[A/µs] 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 24. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 12 V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration Package Drawing PG-TO263-3 MAX 4.57 0.25 0.85 1.15 0.65 1.40 9.45 7.90 10.31 8.60 MIN 4.30 0.00 0.65 0.95 0.33 1.17 8.51 7.10 9.80 6.50 2.54 5.08 2 14.61 2.29 0.70 1.00 16.05 9.30 4.50 10.70 3.65 1.25 Datasheet MAX 0.180 0.010 0.033 0.045 0.026 0.055 0.372 0.311 0.406 0.339 MIN 0.169 0.000 0.026 0.037 0.013 0.046 0.335 0.280 0.386 0.256 Z8B00003324 0 0 5 5 0.100 0.200 2 15.88 3.00 1.60 1.78 16.25 9.50 4.70 10.90 3.85 1.45 0.575 0.090 0.028 0.039 0.632 0.366 0.177 0.421 0.144 0.049 13 7.5mm 0.625 0.118 0.063 0.070 0.640 0.374 0.185 0.429 0.152 0.057 30-08-2007 01 V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.1 2018-01-11 IKB30N65EH5 Highspeedswitchingseries5thgeneration RevisionHistory IKB30N65EH5 Revision:2018-01-11,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2018-01-11 Final data sheet Datasheet 15 V2.1 2018-01-11 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2018. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.