ELM GD25LQ80 8m-bit serial flash Datasheet

http://www.elm-tech.com
GD25LQ80
DATASHEET
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
- Content 1. FEATURES
Page
-------------------------------------------------------------------------------------------------
2. GENERAL DESCRIPTION
4
-----------------------------------------------------------------------------
5
--------------------------------------------------------------------------
6
4. DEVICE OPERATION
----------------------------------------------------------------------------------
7
5. DATA PROTECTION
------------------------------------------------------------------------------------
8
6. STATUS REGISTER
-------------------------------------------------------------------------------------
10
3. MEMORY ORGANIZATION
7. COMMANDS DESCRIPTION
-------------------------------------------------------------------------
11
7.1. Write Enable (WREN) (06H)
-----------------------------------------------------------------------
15
7.2. Write Disable (WRDI) (04H)
-----------------------------------------------------------------------
16
7.3. Write Enable for Volatile Status Register (50H)
--------------------------------------------------
17
------------------------------------------------------
18
--------------------------------------------------------------
19
--------------------------------------------------------------------
20
7.4. Read Status Register (RDSR) (05H or 35H)
7.5. Write Status Register (WRSR) (01H)
7.6. Read Data Bytes (READ) (03H)
7.7. Read Data Bytes at Higher Speed (Fast Read) (0BH)
-------------------------------------------
20
7.8. Dual Output Fast Read (3BH)
----------------------------------------------------------------------
21
7.9. Quad Output Fast Read (6BH)
----------------------------------------------------------------------
22
7.10. Dual I/O Fast Read (BBH)
--------------------------------------------------------------------------
22
7.11. Quad I/O Fast Read (EBH)
--------------------------------------------------------------------------
23
7.12. Quad I/O Word Fast Read (E7H)
------------------------------------------------------------------
25
7.13. Set Burst with Wrap (77H)
--------------------------------------------------------------------------
27
7.14. Page Program (PP) (02H)
----------------------------------------------------------------------------
27
7.15. Quad Page Program (32H)
---------------------------------------------------------------------------
29
-----------------------------------------------------------------------------
30
7.16. Sector Erase (SE) (20H)
7.17. 32KB Block Erase (BE) (52H)
---------------------------------------------------------------------
31
7.18. 64KB Block Erase (BE) (D8H)
---------------------------------------------------------------------
32
--------------------------------------------------------------------------
33
---------------------------------------------------------------------
34
7.19. Chip Erase (CE) (60/C7H)
7.20. Deep Power-Down (DP) (B9H)
7.21. Release from Deep Power-Down and Read Device ID (RDI) (ABH)
-------------------------
35
7.22. Read Manufacture ID/Device ID (REMS) (90H)
-------------------------------------------------
37
7.23. Read Manufacture ID/Device ID Dual I/O (92H)
------------------------------------------------
38
7.24. Read Manufacture ID/Device ID Quad I/O (94H)
-----------------------------------------------
39
------------------------------------------------------------------
40
7.26. Program/Erase Suspend (PES) (75H)
--------------------------------------------------------------
41
7.27. Program/Erase Resume (PER) (7AH)
--------------------------------------------------------------
42
7.25. Read Identification (RDID) (9FH)
59 - 2
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.28. Erase Security Registers (44H)
----------------------------------------------------------------------
43
------------------------------------------------------------------
44
----------------------------------------------------------------------
45
-------------------------------------------------------------------------
46
-----------------------------------------------------------------------
47
7.33. Enable QPI (38H)
------------------------------------------------------------------------------------
47
7.34. Disable QPI (FFH)
-----------------------------------------------------------------------------------
48
7.29. Program Security Registers (42H)
7.30. Read Security Registers (48H)
7.31. Set Read Parameters (C0H)
7.32. Burst Read With Wrap (0CH)
7.35. Enable Reset (66H) and Reset (99H)
---------------------------------------------------------------
49
---------------------------------------------------------------
50
-------------------------------------------------------------------------------------
50
----------------------------------------------------------------------------------
50
8. ELECTRICAL CHARACTERISTICS
8.1. Power-ON timing
8.2. Initial delivery state
8.3. Data retention and endurance
8.4. Latch up characteristics
8.5. Absolute maximum ratings
-----------------------------------------------------------------------
50
-----------------------------------------------------------------------------
50
-------------------------------------------------------------------------
51
8.6. Capacitance measurement conditions
-------------------------------------------------------------
51
8.7. DC characteristics
-----------------------------------------------------------------------------------
52
8.8. AC characteristics
-----------------------------------------------------------------------------------
53
9. ORDERING INFORMATION
-------------------------------------------------------------------------
55
10. PACKAGE INFORMATION
---------------------------------------------------------------------------
56
10.1. Package SOP8 150MIL
-----------------------------------------------------------------------------
56
10.2. Package SOP8 208MIL
-----------------------------------------------------------------------------
57
10.3. Package USON8 (4x3MM)
------------------------------------------------------------------------
58
10.4. Package WSON8 (6x5MM)
------------------------------------------------------------------------
59
59 - 3
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
1. FEATURES
♦ 8M-bit Serial Flash
♦ Program/Erase Speed
- 1024K-byte
- 256 bytes per programmable page
♦ Standard, Dual, Quad SPI, QPI
- Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
- Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
- Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
- QPI: SCLK, CS#, IO0, IO1, IO2, IO3
♦ High Speed Clock Frequency
- 120MHz for fast read with 30PF load
- Dual I/O Data transfer up to 240Mbits/s
- Quad I/O Data transfer up to 480Mbits/s
- QPI Mode Data transfer up to 480Mbits/s
- Continuous Read With 8/16/32/64-byte Wrap
♦ Software/Hardware Write Protection
- Write protect all/portion of memory via software
- Enable/Disable protection with WP# pin
- Top or Bottom, Sector or Block selection
- Page Program time: 0.4ms typical
- Sector Erase time: 60ms typical
- Block Erase time: 0.3/0.5s typical
- Chip Erase time: 7s typical
♦ Flexible Architecture
- Sector of 4K-byte
- Block of 32/64K-byte
- Erase/Program Suspend/Resume
♦ Low Power Consumption
- 20mA maximum active current
- 5μA maximum power down current
♦ Advanced security Features
- 4*256-Byte Security Registers With OTP Lock
♦ Single Power Supply Voltage
- Full voltage range: 1.65~1.95V
♦ Minimum 100,000 Program/Erase Cycles
59 - 4
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
2. GENERAL DESCRIPTION
The GD25LQ80 (8M-bit) SPI flash supports the standard Serial Peripheral Interface (SPI), and supports the
Dual/Quad SPI and QPI mode: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and
I/O3 (HOLD#). The Dual I/O data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data
is transferred with speed of 480Mbits/s.
Connection Diagram
8-LEAD SOP
8-LEAD USON/WSON
Pin Description
Pin Name
I/O
CS#
SO (IO1)
WP# (IO2)
I
I/O
I/O
Chip Select Input
Data Output (Data Input Output 1)
Write Protect Input (Data Input Output 2)
I/O
Ground
Data Input (Data Input Output 0)
VSS
SI (IO0)
SCLK
HOLD# (IO3)
VCC
Description
I
I/O
Serial Clock Input
Hold Input (Data Input Output 3)
Power Supply
Block Diagram
Write Control
Logic
Status
Register
HOLD#(IO3)
SCLK
CS#
SPI
Command &
Control Logic
High Voltage
Generators
Page Address
Latch/Counter
Write Protect Logic
and Row Decode
WP#(IO2)
Flash
Memory
Column Decode And
256-Byte Page Buffer
SI(IO0)
SO(IO1)
Byte Address
Latch/Counter
59 - 5
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
3. MEMORY ORGANIZATION
GD25LQ80
Each device has
Each block has
Each sector has
Each page has
1M
64/32K
4K
256
bytes
4K
256/128
16
-
pages
256
16/8
-
-
sectors
16/32
-
-
-
blocks
Uniform Block Sector Architecture
GD25LQ80 64K Bytes Block Sector Architecture
Block
Sector
15
255
-----
0FF000H
-----
0FFFFFH
-----
240
239
0F0000H
0EF000H
0F0FFFH
0EFFFFH
14
----224
-----
----0E0000H
-----
----0E0FFFH
-----
-----
-------------
-------------
-------------
-----
--------47
--------02F000H
--------02FFFFH
2
----32
----020000H
----020FFFH
31
01F000H
01FFFFH
----16
----010000H
----010FFFH
15
----0
00F000H
----000000H
00FFFFH
----000FFFH
1
0
Address range
59 - 6
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
4. DEVICE OPERATION
SPI Mode
Standard SPI
The GD25LQ80 feature a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (CS#),
Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are supported. Input data is
latched on the rising edge of SCLK and data shifts out on the falling edge of SCLK.
Dual SPI
The GD25LQ80 supports Dual SPI operation when using the “Dual Output Fast Read” and “Dual I/O Fast
Read” (3BH and BBH) commands. These commands allow data to be transferred to or from the device at two
times the rate of the standard SPI. When using the Dual SPI command the SI and SO pins become bidirectional
I/O pins: IO0 and IO1.
Quad SPI
The GD25LQ80 supports Quad SPI operation when using the “Quad Output Fast Read”, “Quad I/O Fast
Read”, “Quad I/O Word Fast Read” (6BH, EBH, E7H) commands. These commands allow data to be transferred
to or from the device at four times the rate of the standard SPI. When using the Quad SPI command the SI and
SO pins become bidirectional I/O pins: IO0 and IO1, and WP# and HOLD# pins become IO2 and IO3. Quad
SPI commands require the non-volatile Quad Enable bit (QE) in Status Register to be set.
QPI
The GD25LQ80 supports Quad Peripheral Interface (QPI) operations only when the device is switched
ftom Standard/Dual/Quad SPI mode to QPI mode using the “Enable the QPI (38H)” command. The QPI
mode utilizes all four IO pins to input the command code. Standard/Dual/Quad SPI mode and QPI mode are
exclusive. Only one mode can be active at any given times. “Enable the QPI (38H)” and “Disable the QPI (FFH)”
commands are used to switch between these two modes. Upon power-up and after software reset using “Reset
(99H)” command, the default state of the device is Standard/Dual/Quad SPI mode. The QPI mode requires the
non-volatile Quad Enable bit (QE) in Status Register to be set.
Hold
The HOLD# signal goes low to stop any serial communications with the device, but doesn’t stop the operation
of write status register, programming, or erasing in progress.
The operation of HOLD, need CS# keep low, and starts on falling edge of the HOLD# signal, with SCLK
signal being low (if SCLK is not being low, HOLD operation will not start until SCLK being low). The HOLD
condition ends on rising edge of HOLD# signal with SCLK being low (If SCLK is not being low, HOLD
operation will not end until SCLK being low).
The SO is high impedance, both SI and SCLK don’t care during the HOLD operation, if CS# drives high
during HOLD operation, it will reset the internal logic of the device. To re-start communication with chip, the
HOLD# must be at high and then CS# must be at low.
59 - 7
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Figure 1. Hold Condition
CS#
SCLK
HOLD#
HOLD
HOLD
5. DATA PROTECTION
The GD25LQ80 provides the following data protection methods:
♦ Write Enable (WREN) command: The WREN command is set the Write Enable Latch bit (WEL). The WEL
bit will return to reset by the following situation:
- Power-Up / Write Disable (WRDI) / Write Status Register (WRSR)
- Page Program (PP) / Sector Erase (SE) / Block Erase (BE) / Chip Erase (CE)
♦ Software Protection Mode: The Block Protect (BP4, BP3, BP2, BP1 and BP0) bits define the section of the
memory array that can be read but not change.
♦ Hardware Protection Mode: WP# going low to protected the BP0~BP4 bits and SRP0~1 bits.
♦ Deep Power-Down Mode: In Deep Power-Down Mode, all commands are ignored except the Release from
Deep Power-Down Mode command.
Table 1. GD25LQ80 Protected area size (CMP=0)
Status Register Content
BP4 BP3 BP2 BP1 BP0
×
×
0
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
1
1
0
0
1
0
0
0
1
0
0
1
0
1
0
1
0
0
1
0
1
1
0
1
1
0
0
0
×
1
0
1
×
×
1
1
×
1
0
0
0
1
1
0
0
1
0
1
0
0
1
1
1
0
1
0
×
1
1
0
0
1
1
1
0
1
0
1
1
0
1
1
1
1
1
0
×
Memory Content
Blocks
NONE
15
14 to 15
12 to 15
8 to 15
0
0 to 1
0 to 3
0 to 7
0 to 15
0 to 15
15
15
15
15
0
0
0
0
Addresses
NONE
0F0000H-0FFFFFH
0E0000H-0FFFFFH
0C0000H-0FFFFFH
080000H-0FFFFFH
000000H-00FFFFH
000000H-01FFFFH
000000H-03FFFFH
000000H-07FFFFH
000000H-0FFFFFH
000000H-0FFFFFH
0FF000H-0FFFFFH
0FE000H-0FFFFFH
0FC000H-0FFFFFH
0F8000H-0FFFFFH
000000H-000FFFH
000000H-001FFFH
000000H-003FFFH
000000H-007FFFH
59 - 8
Density
NONE
64KB
128KB
256KB
512KB
64KB
128KB
256KB
512KB
1MB
1MB
4KB
8KB
16KB
32KB
4KB
8KB
16KB
32KB
Portion
NONE
Upper 1/16
Upper 1/8
Upper 1/4
Upper 1/2
Lower 1/16
Lower 1/8
Lower 1/4
Lower 1/2
ALL
ALL
Top Block
Top Block
Top Block
Top Block
Bottom Block
Bottom Block
Bottom Block
Bottom Block
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Table 1a. GD25LQ80 Protected area size (CMP=1)
Status Register Content
Memory Content
BP4 BP3 BP2 BP1 BP0
Blocks
Addresses
Density
Portion
×
×
0
0
0
ALL
000000H-0FFFFFH
1M
ALL
0
0
0
0
1
0 to 14
000000H-0EFFFFH
960KB
Lower 15/16
0
0
0
1
0
0 to 13
000000H-0DFFFFH
896KB
Lower 7/8
0
0
0
1
1
0 to 11
000000H-0BFFFFH
768KB
Lower 3/4
0
0
1
0
0
0 to 7
000000H-07FFFFH
512KB
Lower 1/2
0
1
0
0
1
1 to 15
010000H-0FFFFFH
960KB
Upper 15/16
0
1
0
1
0
2 to 15
020000H-0FFFFFH
896KB
Upper 7/8
0
1
0
1
1
4 to 15
040000H-0FFFFFH
768KB
Upper 3/4
0
1
1
0
0
8 to 15
080000H-0FFFFFH
512KB
Upper 1/2
0
×
1
0
1
NONE
NONE
NONE
NONE
×
×
1
1
×
NONE
NONE
NONE
NONE
1
0
0
0
1
0 to 15
000000H-0FEFFFH
1020KB
Lower 255/256
1
0
0
1
0
0 to 15
000000H-0FDFFFH
1016KB
Lower 127/128
1
0
0
1
1
0 to 15
000000H-0FBFFFH
1008KB
Lower 63/64
1
0
1
0
×
0 to 15
000000H-0F7FFFH
992KB
Lower 31/32
1
1
0
0
1
0 to 15
001000H-0FFFFFH
1020KB
Upper 255/256
1
1
0
1
0
0 to 15
002000H-0FFFFFH
1016KB
Upper 127/128
1
1
0
1
1
0 to 15
004000H-0FFFFFH
1008KB
Upper 63/64
1
1
1
0
×
0 to 15
008000H-0FFFFFH
992KB
Upper 31/32
Note:
1. X=don’t care
2. If any erase or program command specifies a memory that contains protected data portion, this command will
be ignored.
59 - 9
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
6. STATUS REGISTER
S15
SUS1
S14
CMP
S13
LB3
S12
LB2
S11
LB1
S10
SUS2
S9
QE
S8
SRP1
S7
SRP0
S6
BP4
S5
BP3
S4
BP2
S3
BP1
S2
BP0
S1
WEL
S0
WIP
The status and control bits of the Status Register are as follows:
WIP bit.
The Write In Progress (WIP) bit indicates whether the memory is busy in program/erase/write status register
progress. When WIP bit sets to 1, means the device is busy in program/erase/write status register progress, when
WIP bit sets 0, means the device is not in program/erase/write status register progress.
WEL bit.
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the
internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status
Register, Program or Erase command is accepted.
BP4, BP3, BP2, BP1, BP0 bits.
The Block Protect (BP4, BP3, BP2, BP1 and BP0) bits are non-volatile. They define the size of the area to be
software protected against Program and Erase commands. These bits are written with the Write Status Register
(WRSR) command. When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to 1, the relevant memory
area (as defined in Table1). becomes protected against Page Program (PP), Sector Erase (SE) and Block
Erase (BE) commands. The Block Protect (BP4, BP3, BP2, BP1 and BP0) bits can be written provided that
the Hardware Protected mode has not been set. The Chip Erase (CE) command is executed, only if the Block
Protect (BP4, BP3, BP2, BP1 and BP0) are set to “None protected”.
SRP1, SRP0 bits.
The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status register. The
SRP bits control the method of write protection: software protection, hardware protection, power supply lockdown or one time programmable protection.
SRP1 SRP0 #WP
Status Register
Description
0
0
×
Software Protected
The Status Register can be written to after a Write Enable
command, WEL=1.(Default)
0
1
0
Hardware Protected
WP# = 0, the Status Register locked and can not be written to.
0
1
1
Hardware Unprotected
1
0
×
Power Supply
Lock-Down(1)
1
1
×
WP# = 1, the Status Register is unlocked and can be written to
after a Write Enable command, WEL=1.
Status Register is protected and can not be written to again until
the next Power-Down, Power-Up cycle.
One Time Program(1) Status Register is permanently protected and can not be written to.
NOTE:
(1). When SRP1, SRP0=(1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state.
59 - 10
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
QE bit.
The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad operation.
When the QE bit is set to 0 (Default) the WP# pin and HOLD# pin are enable. When the QE pin is set to 1,
the Quad IO2 and IO3 pins are enabled. (The QE bit should never be set to 1 during standard SPI or Dual SPI
operation if the WP# or HOLD# pins are tied directly to the power supply or ground).
LB3, LB2, LB1 bits.
The LB3, LB2, LB1 bits are non-volatile One Time Program (OTP) bits in Status Register (S13-S11) that
provide the write protect control and status to the Security Registers. The default state of LB3-LB1 are 0,
the security registers are unlocked. The LB3-LB1 bits can be set to 1 individually using the Write Register
instruction. The LB3-LB1 bits are One Time Programmable, once its set to 1, the Security Registers will become
read-only permanently.
CMP bit.
The CMP bit is a non-volatile Read/Write bit in the Status Register (S14). It is used in conjunction the BP4BP0 bits to provide more flexibility for the array protection. Please see the Status registers Memory Protection
table for details. The default setting is CMP=0.
SUS1, SUS2 bits.
The SUS1 and SUS2 bits are read only bit in the status register (S15 and S10) that are set to 1 after executing an
Program/Erase Suspend (75H) command (The Erase Suspend will set the SUS1 to 1, and the Program Suspend
will set the SUS2 to 1). The SUS1 and SUS2 bits are cleared to 0 by Program/Erase Resume (7AH) command
as well as a power-down, power-up cycle.
7. COMMANDS DESCRIPTION
All commands, addresses and data are shifted in and out of the device, beginning with the most significant bit
on the first rising edge of SCLK after CS# is driven low. Then, the one-byte command code must be shifted in
to the device, most significant bit first on SI, each bit being latched on the rising edges of SCLK.
See Table2, every command sequence starts with a one-byte command code. Depending on the command, this
might be followed by address bytes, or by data bytes, or by both or none. CS# must be driven high after the last
bit of the command sequence has been shifted in. For the command of Read, Fast Read, Read Status Register or
Release from Deep Power-Down, and Read Device ID, the shifted-in command sequence is followed by a dataout sequence. CS# can be driven high after any bit of the data-out sequence is being shifted out.
For the command of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write
Enable, Write Disable or Deep Power-Down command, CS# must be driven high exactly at a byte boundary,
otherwise the command is rejected, and is not executed. That is CS# must driven high when the number of clock
pulses after CS# being driven low is an exact multiple of eight. For Page Program, if at any time the input byte
is not a full byte, nothing will happen and WEL will not be reset.
59 - 11
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Table 2. Commands (Standard/Dual/Quad SPI)
Command Name
Byte 1
Byte 2
Write Enable
Write Disable
Volatile SR Write Enable
Read Status Register
Read Status Register-1
Write Status Register
Read Data
Fast Read
Dual Output Fast Read
06H
04H
50H
05H
35H
01H
03H
0BH
3BH
(S7-S0)
(S15-S8)
(S7-S0)
A23-A16
A23-A16
A23-A16
Dual I/O Fast Read
BBH
A23-A8 (2)
Quad Output Fast Read
6BH
Quad I/O Fast Read
EBH
Quad I/O Word Fast Read (7)
E7H
A23-A16
A23-A0
M7-M0 (4)
A23-A0
M7-M0 (4)
A23-A16
A23-A16
A23-A16
A23-A16
A23-A16
Page Program
Quad Page Program
Sector Erase
Block Erase (32K)
Block Erase (64K)
Chip Erase
Enable QPI
Enable Reset
Reset
Set Burst with Wrap
Program/Erase Suspend
Program/Erase Resume
Deep Power-Down
Release From Deep
Power-Down,
And Read Device ID
02H
32H
20H
52H
D8H
C7/60H
38H
66H
99H
77H
75H
7AH
B9H
ABH
Release From Deep
ABH
Power-Down
Manufacturer/Device ID
90H
Manufacturer/Device ID
92H
by Dual I/O
Manufacturer/Device ID
94H
by Quad I/O
Read Identification
9FH
(8)
Erase Security Registers
44H
Program Security Registers (8) 42H
Read Security Registers (8)
48H
Byte 3
Byte 4
Byte 5
Byte 6
n-Bytes
(continuous)
(continuous)
(S15-S8)
A15-A8
A15-A8
A15-A8
A7-A0
M7-M0 (2)
A15-A8
A7-A0
A7-A0
A7-A0
(D7-D0)
dummy
dummy
(Next byte) (continuous)
(D7-D0) (continuous)
D7-D0 (1) (continuous)
(D7-D0) (1)
A7-A0
(continuous)
dummy
(D7-D0) (3) (continuous)
dummy (5)
(D7-D0) (3)
(continuous)
dummy (6)
(D7-D0) (3)
(continuous)
A15-A8
A15-A8
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
A7-A0
A7-A0
(D7-D0) Next byte
(D7-D0) (3)
dummy
dummy
dummy
(ID7-ID0)
dummy
dummy
A7-A0,
M[7:0]
W6-W4
A23-A8
A23-A0,
M[7:0]
(M7-M0)
A23-A16
A23-A16
A23-A16
(continuous)
00H
(M7- M0) (ID7-ID0) (continuous)
(M7-M0)
(continuous)
(ID7-ID0)
(M7-M0)
dummy
(continuous)
(ID7-ID0)
(ID15- ID8) (ID7- ID0)
(continuous)
A15-A8
A7-A0
A15-A8
A7-A0
(D7-D0)
(D7-D0)
A15-A8
A7-A0
dummy
(D7-D0)
59 - 12
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Table 2a. Commands (QPI)
Command Name
Byte 1
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
Clock Number
(0, 1)
(2, 3)
(4, 5)
(6, 7)
(8, 9)
(10, 11)
(S7-S0)
(S15-S8)
(S7-S0)
A23-A16
A23-A16
A23-A16
A23-A16
(S15-S8)
A15-A8
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
A7-A0
(D7-D0)
Next byte
P7-P0
A23-A16
A23-A16
A23-A16
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
dummy
dummy
M7-M0
(D7-D0)
(D7-D0)
(D7-D0)
dummy
dummy
dummy
(ID7- ID0)
dummy
(M7-M0)
dummy
(ID15- ID8)
00H
(ID7- ID0)
(M7- M0)
Write Enable
06H
Volatile SR Write Enable
50H
Write Disable
04H
Read Status Register
05H
Read Status Register-1
35H
Write Status Register
01H
Page Program
02H
Sector Erase
20H
Block Erase (32K)
52H
Block Erase (64K)
D8H
Chip Erase
C7/60H
Program/Erase Suspend
75H
Program/Erase Resume
7AH
Deep Power-Down
B9H
Set Read Parameters
C0H
Fast Read
0BH
Burst Read with Wrap
0CH
Quad I/O Fast Read
EBH
Release From Deep Power-Down,
ABH
and Read Device ID
Manufacturer/Device ID
90H
Read Identification
9FH
Disable QPI
FFH
Enable Reset
66H
Reset
99H
(ID7-ID0)
NOTE:
(1) Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
(2) Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8
IO1 = A23, A21, A19, A17, A15, A13, A11, A9
A6, A4, A2, A0, M6, M4, M2, M0
A7, A5, A3, A1, M7, M5, M3, M1
(3) Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3,…..)
59 - 13
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
(4) Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
(5) Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0,…)
IO1 = (x, x, x, x, D5, D1,…)
IO2 = (x, x, x, x, D6, D2,…)
IO3 = (x, x, x, x, D7, D3,…)
(6) Fast Word Read Quad I/O Data
IO0 = (x, x, D4, D0,…)
IO1 = (x, x, D5, D1,…)
IO2 = (x, x, D6, D2,…)
IO3 = (x, x, D7, D3,…)
(7) Fast Word Read Quad I/O Data: the lowest address bit must be 0.
(8) Security Registers Address:
Security Register0: A23-A16=00H, A15-A8=00H, A7-A0=Byte Address;
Security Register1: A23-A16=00H, A15-A8=10H, A7-A0=Byte Address;
Security Register2: A23-A16=00H, A15-A8=20H, A7-A0=Byte Address;
Security Register3: A23-A16=00H, A15-A8=30H, A7-A0=Byte Address.
(9) QPI Command, Address, Data input/output format:
CLK #0 1
IO0 = C4, C0,
IO1 = C5, C1,
IO2 = C6, C2,
IO3 = C7, C3,
2 3
A20, A16,
A21, A17,
A22, A18,
A23, A19,
4
5
A12, A8,
A13, A9,
A14, A10,
A15, A11,
6 7
A4, A0,
A5, A1,
A6, A2,
A7, A3,
8
9
D4, D0,
D5, D1,
D6, D2,
D7, D3,
10 11
D4, D0
D5, D1
D6, D2
D7, D3
Table of ID Definitions:
GD25LQ80
Operation Code
M7-M0
ID15-ID8
ID7-ID0
9FH
C8
60
14
90H
ABH
C8
13
13
59 - 14
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.1. Write Enable (WREN)(06H)
The Write Enable (WREN) command is for setting the Write Enable Latch (WEL) bit. The Write Enable Latch
(WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE),
Write Status Register (WRSR) and Erase/Program Security Registers command. The Write Enable (WREN)
command sequence: CS# goes low → sending the Write Enable command → CS# goes high.
Figure 2. Write Enable Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
Command
06H
High-Z
Figure 2a. Write Enable Sequence Diagram (QPI)
CS#
SCLK
0
1
Command
06H
IO0
IO1
IO2
IO3
59 - 15
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.2. Write Disable (WRDI) (04H)
The Write Disable command is for resetting the Write Enable Latch (WEL) bit. The Write Disable command
sequence: CS# goes low → Sending the Write Disable command → CS# goes high. The WEL bit is reset by
following condition: Power-up and upon completion of the Write Status Register, Page Program, Sector Erase,
Block Erase, Chip Erase, Erase/Program Security Registers and Reset commands.
Figure 3. Write Disable Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
Command
04H
High-Z
Figure 3a. Write Disable Sequence Diagram (QPI)
CS#
SCLK
0
1
Command
04H
IO0
IO1
IO2
IO3
59 - 16
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.3. Write Enable for Volatile Status Register (50H)
The non-volatile Status Register bits can also be written to as volatile bits. This gives more flexibility to
change the system configuration and memory protection schemes quickly without waiting for the typical nonvolatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. The Write Enable for
Volatile Status Register command must be issued prior to a Write Status Register command. The Write Enable
for Volatile Status Register command will not set the Write Enable Latch bit, it is only valid for the Write Status
Register command to change the volatile Status Register bit values.
Figure 4. Write Enable for Volatile Status Register Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
Command(50H)
SI
SO
High-Z
Figure 4a. Write Enable for Volatile Status Register Sequence Diagram (QPI)
CS#
SCLK
0
1
Command
50H
IO0
IO1
IO2
IO3
59 - 17
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.4. Read Status Register (RDSR) (05H or 35H)
The Read Status Register (RDSR) command is for reading the Status Register. The Status Register may be read
at any time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles
is in progress, it is recommended to check the Write In Progress (WIP) bit before sending a new command to
the device. It is also possible to read the Status Register continuously. For command code “05H”, the SO will
output Status Register bits S7~S0. The command code “35H”, the SO will output Status Register bits S15~S8.
Figure 5. Read Status Register Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
Command
05H or 35H
High-Z
7
S7~S0 or S15~S8 out
6 5 4 3 2 1 0
7
S7~S0 or S15~S8 out
6 5 4 3 2 1 0
7
MSB
MSB
Figure 5a. Read Status Register Sequence Diagram (QPI)
CS#
SCLK
0
1
2
3
4
5
Command
05H or 35H
IO0
4
0
4
0
4
IO1
5
1
5
1
5
IO2
6
2
6
2
6
IO3
7
3
7
3
7
S7-S0 or S15-S8 out
59 - 18
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.5. Write Status Register (WRSR) (01H)
The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it
can be accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable
(WREN) command has been decoded and executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) command has no effect on S15, S14, S10, S1 and S0 of the Status Register.
CS# must be driven high after the eighth or sixteen bit of the data byte has been latched in. If not, the Write
Status Register (WRSR) command is not executed. If CS# is driven high after eighth bit of the data byte, the
CMP and QE and SRP1 bits will be cleared to 0. As soon as CS# is driven high, the self-timed Write Status
Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status
Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP)
bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is
completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4,
BP3, BP2, BP1 and BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table1. The Write Status Register (WRSR) command also allows the user to set or reset the Status Register Protect
(SRP1 and SRP0) bits in accordance with the Write Protect (WP#) signal. The Status Register Protect (SRP1
and SRP0) bits and Write Protect (WP#) signal allow the device to be put in the Hardware Protected Mode. The
Write Status Register (WRSR) command is not executed once the Hardware Protected Mode is entered.
Figure 6. Write Status Register Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
8
Command
SI
01H
Status Register in
MSB
SO
2
3
4
5
6
7
1
0 15 14 13 12 11 10 9
8
High-Z
Figure 6a. Write Status Register Sequence Diagram (QPI)
CS#
SCLK
0
1
2
3
4
5
Command
01H
IO0
4
0
12
8
IO1
5
1
13
9
IO2
6
2 14
10
IO3
7
3
15 11
Status Register in
59 - 19
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.6. Read Data Bytes (READ) (03H)
The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), each bit being latched-in
during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being
shifted out, at a Max frequency fR, during the falling edge of SCLK. The first byte addressed can be at any
location. The address is automatically incremented to the next higher address after each byte of data is shifted
out. The whole memory can, therefore, be read with a single Read Data Bytes (READ) command. Any Read
Data Bytes (READ) command, while an Erase, Program or Write cycle is in progress, is rejected without having
any effects on the cycle that is in progress.
Figure 7. Read Data Bytes Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
8
Command
03H
High-Z
9 10
28 29 30 31 32 33 34 35 36 37 38 39
24-bit address
23 22 21
3
2
1
0
MSB
MSB
7
6
5
Data Out1
4 3 2 1
Data Out2
0
7.7. Read Data Bytes at Higher Speed (Fast Read) (0BH)
The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by
a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then
the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC,
during the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically
incremented to the next higher address after each byte of data is shifted out.
Figure 8. Read Data Bytes at Higher Speed Sequence Diagram
59 - 20
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Fast Read (0BH) in QPI mode
The Fast Read command is also supported in QPI mode. In QPI mode, the number of dummy clocks is
configured by the “Set Read Parameters (C0H)” command to accommodate a wide range application with
different needs for either maximum Fast Read frequency or minimum data access latency. Depending on the
Read Parameter Bits P[5:4] setting, the number of dummy clocks can be configured as either 4/6/8.
Figure 8a. Read Data Bytes at Higher Speed Sequence Diagram (QPI)
CS#
0
SCLK
1
2
3
4
5
6
7
Command
0BH
IO0
A23-16 A15-8
20 16 12 8
A7-0
4 0
IO1
21 17 13
9
5
IO2
22 18 14 10
IO3
23 19 15 11
8
9
10 11 12 13
IOs switch from
Input to output
Dummy*
4
0
4
0
4
0
4
1
5
1
5
1
5
1
5
6
2
6
2
6
2
6
2
6
7
3
7
3
7
3
7
3
7
Byte1
Byte2
*"Set Read Parameters" Command (C0H)
can set the number of dummy clocks
7.8. Dual Output Fast Read (3BH)
The Dual Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, each bit
being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle
from SI and SO. The command sequence is shown in followed Figure9. The first byte addressed can be at any
location. The address is automatically incremented to the next higher address after each byte of data is shifted
out.
Figure 9. Dual Output Fast Read Sequence Diagram
59 - 21
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.9. Quad Output Fast Read (6BH)
The Quad Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, each bit
being latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle
from IO3, IO2, IO1 and IO0. The command sequence is shown in followed Figure10. The first byte addressed
can be at any location. The address is automatically incremented to the next higher address after each byte of
data is shifted out.
Figure 10. Quad Output Fast Read Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
7
8
9 10
Command
SI(IO0)
24-bit address
6BH
High-Z
WP#(IO2)
High-Z
HOLD#(IO3)
High-Z
SCLK
3
23 22 21
SO(IO1)
CS#
28 29 30 31
2
1
0
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Dummy Clocks
SI(IO0)
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7 3 7 3 7 3 7 3 7
Byte1 Byte2 Byte3 Byte4
7.10. Dual I/O Fast Read (BBH)
The Dual I/O Fast Read command is similar to the Dual Output Fast Read command but with the capability
to input the 3-byte address (A23-0) and a “Continuous Read Mode” byte 2-bit per clock by SI and SO, each bit
being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle
from SI and SO. The command sequence is shown in followed Figure11. The first byte addressed can be at any
location. The address is automatically incremented to the next higher address after each byte of data is shifted
out.
Dual I/O Fast Read with “Continuous Read Mode”
The Dual I/O Fast Read command can further reduce command overhead through setting the “Continuous
Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M5-4)
=(1, 0), then the next Dual I/O Fast Read command (after CS# is raised and then lowered) does not require the
BBH command code. The command sequence is shown in followed Figure11. If the “Continuous Read Mode”
bits (M5-4) do not equal (1, 0), the next command requires the first BBH command code, thus returning to
normal operation. A “Continuous Read Mode” Reset command can be used to reset (M5-4) before issuing normal
command.
59 - 22
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Figure 11. Dual I/O Fast Read Sequence Diagram (M5-4 ≠ (1, 0))
CS#
0
SCLK
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
6
4
2
0
6
5
3
1
7
Command
SI(IO0)
BBH
SO(IO1)
7
A23-16
4
2
0
6
5
3
1
7
A15-8
4
2
0
6
5
3
1
7
A7-0
4
2
0
5
3
1
M7-0
CS#
SCLK
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
SI(IO0)
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
SO(IO1)
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
Byte1
Byte2
Byte3
Byte4
Figure 11a. Dual I/O Fast Read Sequence Diagram (M5-4 = (1, 0 ))
CS#
SCLK
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
6
4
2
0
6
4
2
0
6
4
2
0
6
5
3
1
7
5
3
1
7
5
3
1
7
7
A23-16
A15-8
A7-0
4
2
0
5
3
1
M7-0
CS#
SCLK
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
SI(IO0)
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
SO(IO1)
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
Byte1
Byte2
Byte3
Byte4
7.11. Quad I/O Fast Read (EBH)
The Quad I/O Fast Read command is similar to the Dual I/O Fast Read command but with the capability to
input the 3-byte address (A23-0) and a “Continuous Read Mode” byte and 4-dummy clock 4-bit per clock
by IO0, IO1, IO3, IO4, each bit being latched in during the rising edge of SCLK, then the memory contents
are shifted out 4-bit per clock cycle from IO0, IO1, IO2, IO3. The command sequence is shown in followed
Figure12. The first byte addressed can be at any location. The address is automatically incremented to the next
higher address after each byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be
set to enable for the Quad I/O Fast read command.
59 - 23
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Quad I/O Fast Read with “Continuous Read Mode”
The Quad I/O Fast Read command can further reduce command overhead through setting the “Continuous
Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M5-4)
= (1, 0), then the next Quad I/O Fast Read command (after CS# is raised and then lowered) does not require the
EBH command code. The command sequence is shown in followed Figure12a. If the “Continuous Read Mode”
bits (M5-4) do not equal to (1, 0), the next command requires the first EBH command code, thus returning
to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M5-4) before issuing
normal command.
Figure 12. Quad I/O Fast Read Sequence Diagram (M5-4 ≠ (1, 0))
CS#
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
0
SCLK
1
2
3
4
5
6
7
Command
SI(IO0)
EBH
A23-16 A15-8 A7-0
M7-0
Dummy
Byte1 Byte2
Figure 12a. Quad I/O Fast Read Sequence Diagram (M5-4 = (1, 0))
CS#
8
9 10 11 12 13 14 15
0
1
2
3
4
5
6
7
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
A23-16 A15-8 A7-0 M7-0
Dummy
Byte1 Byte2
Quad I/O Fast Read with “8/16/32/64-Byte Wrap Around” in Standard SPI mode
The Quad I/O Fast Read command can be used to access a specific portion within a page by issuing “Set Burst
with Wrap” (77H) commands prior to EBH. The “Set Burst with Wrap” (77H) command can either enable or
disable the “Wrap Around” feature for the following EBH commands. When “Wrap Around” is enabled, the
data being accessed can be limited to either an 8/16/32/64-byte section of a 256-byte page. The output data
starts at the initial address specified in the command, once it reaches the ending boundary of the 8/16/32/64-byte
section, the output will wrap around the beginning boundary automatically until CS# is pulled high to terminate
the command.
59 - 24
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill
the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands.
The “Set Burst with Wrap” command allows three “Wrap Bits” W6-W4 to be set. The W4 bit is used to enable
or disable the “Wrap Around” operation while W6-W5 is used to specify the length of the wrap around section
within a page.
Quad I/O Fast Read (EBH) in QPI mode
The Quad I/O Fast Read command is also supported in QPI mode. See Figure12b. In QPI mode, the number
of dummy clocks is configured by the “Set Read Parameters (C0H)” command to accommodate a wide range
application with different needs for either maximum Fast Read frequency or minimum data access latency.
Depending on the Read Parameter Bits P[5:4] setting, the number of dummy clocks can be configured as either
4/6/8. In QPI mode, the “Continuous Read Mode” bits M7-M0 are also considered as dummy clocks. “Continuous
Read Mode” feature is also available in QPI mode for Quad I/O Fast Read command. “Wrap Around” feature is
not available in QPI mode for Quad I/O Fast Read command. To perform a read operation with fixed data length
wrap around in QPI mode, a dedicated “Burst Read with Wrap” (0CH) command must be used.
Figure 12b. Quad I/O Fast Read Sequence Diagram (M5-4 = (1, 0) QPI)
CS#
SCLK
0
1
2
3
4
5
6
7
8
9
10 11 12 13
14
IOs switch from
Input to output
Command
EBH
IO0
20 16 12
8
4
0
4
0
4
0
4
0
4
IO1
21 17 13
9
5
1
5
1
5
1
5
1
5
IO2
22 18 14 10
6
2
6
2
6
2
6
2
6
IO3
23 19 15 11
7
3
7
3
7
3
7
3
7
A23-16
A15-8
A7-0 M7-0*
Byte1
Byte2 Byte3
*"Set Read Parameters"
Command (C0H) can
set the number of
dummy clocks
7.12. Quad I/O Word Fast Read (E7H)
The Quad I/O Word Fast Read command is similar to the Quad I/O Fast Read command except that the lowest
address bit (A0) must equal 0 and only 2-dummy clock. The command sequence is shown in followed Figure13.
The first byte addressed can be at any location. The address is automatically incremented to the next higher
address after each byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to
enable for the Quad I/O Word Fast read command.
Quad I/O Word Fast Read with “Continuous Read Mode”
The Quad I/O Word Fast Read command can further reduce command overhead through setting the “Continuous
Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M5-4) =
(1, 0), then the next Quad I/O Word Fast Read command (after CS# is raised and then lowered) does not require
the E7H command code. The command sequence is shown in followed Figure13. If the “Continuous Read
Mode” bits (M5-4) do not equal to (1, 0), the next command requires the first E7H command code, thus returning to
59 - 25
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
normal operation. A “Continuous Read Mode” Reset command can be used to reset (M5-4) before issuing
normal command.
Figure 13. Quad I/O Word Fast Read Sequence Diagram (M5-4 ≠ (1, 0))
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
Command
SI(IO0)
E7H
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Byte3
Figure 13a. Quad I/O Word Fast Read Sequence Diagram (M5-4 = (1, 0))
CS#
8
9 10 11 12 13 14 15
0
1
2
3
4
5
6
7
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Byte3
Quad I/O Word Fast Read with “8/16/32/64-Byte Wrap Around” in Standard SPI mode
The Quad I/O Word Fast Read command can be used to access a specific portion within a page by issuing “Set
Burst with Wrap” (77H) commands prior to E7H. The “Set Burst with Wrap” (77H) command can either enable
or disable the “Wrap Around” feature for the following E7H commands. When “Wrap Around” is enabled, the
data being accessed can be limited to either an 8/16/32/64-byte section of a 256-byte page. The output data
starts at the initial address specified in the command, once it reaches the ending boundary of the 8/16/32/64-byte
section, the output will wrap around the beginning boundary automatically until CS# is pulled high to terminate
the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill
the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands.
The “Set Burst with Wrap” command allows three “Wrap Bits” W6-W4 to be set. The W4 bit is used to enable
or disable the “Wrap Around” operation while W6-W5 is used to specify the length of the wrap around section
within a page.
59 - 26
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.13. Set Burst with Wrap (77H)
The Set Burst with Wrap command is used in conjunction with “Quad I/O Fast Read” and “Quad I/O Word
Fast Read” command to access a fixed length of 8/16/32/64-byte section within a 256-byte page, in standard SPI
mode.
The Set Burst with Wrap command sequence: CS# goes low → Send Set Burst with Wrap command → Send
24 dummy bits → Send 8 bits “Wrap bits” → CS# goes high.
W6, W5
W4=0
W4=1 (default)
Wrap Around
Wrap Length
Wrap Around
Wrap Length
0, 0
Yes
8-byte
No
N/A
0, 1
1, 0
1, 1
Yes
Yes
Yes
16-byte
32-byte
64-byte
No
No
No
N/A
N/A
N/A
If the W6-W4 bits are set by the Set Burst with Wrap command, all the following “Quad I/O Fast Read” and
“Quad I/O Word Fast Read” command will use the W6-W4 setting to access the 8/16/32/64-byte section within
any page. To exit the “Wrap Around” function and return to normal read operation, another Set Burst with Wrap
command should be issued to set W4=1. In QPI mode, the “Burst Read with Wrap (0CH)” command should be
used to perform the Read Operation with “Wrap Around” feature. The Wrap Length set by W5-W4 in Standard
SPI mode is still valid in QPI mode and can also be re-configured by “Set Read Parameters (C0H) command.
Figure 14. Set Burst with Wrap Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
x
x
x
x
x
x
4
x
SO(IO1)
x
x
x
x
x
x
5
x
WP#(IO2)
x
x
x
x
x
x
6
x
HOLD#(IO3)
x
x
x
x
x
x
x
x
SCLK
Command
SI(IO0)
77H
W6-W4
7.14. Page Program (PP) (02H)
The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command must
previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program
command.
The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three
address bytes and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all zero,
all transmitted data that goes beyond the end of the current page are programmed from the start address of the
same page (from the address whose 8 least significant bits (A7-A0) are all zero). CS# must be driven low for the
entire duration of the sequence. The Page Program command sequence: CS# goes low → sending Page Program
59 - 27
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
command → 3-byte address on SI → at least 1 byte data on SI→ CS# goes high. The command sequence is
shown in Figure15. If more than 256 bytes are sent to the device, previously latched data are discarded and the
last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256 data bytes
are sent to device, they are correctly programmed at the requested addresses without having any effects on the
other bytes of the same page. CS# must be driven high after the eighth bit of the last data byte has been latched
in; otherwise the Page Program (PP) command is not executed.
As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the
Page Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress
(WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is
completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Page Program (PP) command applied to a page which is protected by the Block Protect (BP4, BP3, BP2,
BP1 and BP0) is not executed.
Figure 15. Page Program Sequence Diagram
Figure 15a. Page Program Sequence Diagram (QPI)
2
3
4
5
6
7
8
9
10 11 12 13
519
1
518
0
517
SCLK
516
CS#
Command
A23-16 A15-8
20 16 12 8
A7-0
4 0
Byte1
Byte2
Byte3
IO0
4
0
4
0
4
0
4
0
4
0
IO1
21 17 13
9
5
1
5
1
5
1
5
1
5
1
5
1
IO2
22 18 14 10
6
2
6
2
6
2
6
2
6
2
6
2
IO3
23 19 15 11
7
3
7
3
7
3
7
3
7
3
7
3
02H
59 - 28
Byte255 Byte256
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.15. Quad Page Program (32H)
The Quad Page Program command is for programming the memory using four pins: IO0, IO1, IO2 and IO3.
To use Quad Page Program the Quad enable in status register Bit9 must be set (QE = 1). A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the
Page Program command. The Quad Page Program command is entered by driving CS# Iow, followed by the
command code (32H), three address bytes and at least one data byte on IO pins.
The command sequence is shown in Figure 16. If more than 256 bytes are sent to the device, previously latched
data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page.
If less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without
having any effects on the other bytes of the same page. CS# must be driven high after the eighth bit of the last
data byte has been latched in, otherwise the Quad Page Program (PP) command is not executed.
As soon as CS# is driven high, the self-timed Quad Page Program cycle (whose duration is tPP) is initiated.
While the Quad Page Program cycle is in progress, the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Quad Page Program
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable
Latch (WEL) bit is reset.
A Quad Page Program command applied to a page which is protected by the Block Protect (BP4, BP3, BP2,
BP1 and BP0) is not executed.
Figure 16. Quad Page Program Sequence Diagram
CS#
1
0
SCLK
2
3
4
5
6
8
7
24-bit address
Command
0
4
0
4
0
4
0
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
7
3
537
542
543
Byte1 Byte2
0 4
538
SI(IO0)
28 29 30 31 32 33 34 35 36 37 38 39
9 10
23 22 21
32H
2
3
1
MSB
SO(IO1)
540
541
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
SCLK
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
Byte11 Byte12
59 - 29
536
539
CS#
Byte256
Byte253
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.16. Sector Erase (SE) (20H)
The Sector Erase (SE) command is for erasing the all data of the chosen sector. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase (SE)
command is entered by driving CS# low, followed by the command code, and 3-byte address on SI. Any address
inside the sector is a valid address for the Sector Erase (SE) command. CS# must be driven low for the entire
duration of the sequence.
The Sector Erase command sequence: CS# goes low → sending Sector Erase command → 3-byte address on
SI → CS# goes high. The command sequence is shown in Figure17. CS# must be driven high after the eighth bit
of the last address byte has been latched in; otherwise the Sector Erase (SE) command is not executed. As soon
as CS# is driven high, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector
Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the self-timed Sector Erase cycle, and is 0 when it is completed. At
some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Sector Erase
(SE) command applied to a sector which is protected by the Block Protect (BP4, BP3, BP2, BP1 and BP0) bits (see
Table1 & Table1a) is not executed.
Figure 17. Sector Erase Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
8
7
9
24 Bits Address
Command
SI
29 30 31
23 22
MSB
20H
1
2
0
Figure 17a. Sector Erase Sequence Diagram (QPI)
CS#
SCLK
0
1
2
3
4
5
6
7
Command
20H
A23-16 A12-8
A7-0
IO0
20 16 12
8
4
0
IO1
21 17 13
9
5
1
IO2
22 18 14 10 6
2
IO3
23 19 15 11 7
3
59 - 30
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.17. 32KB Block Erase (BE) (52H)
The 32KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit. The 32KB Block Erase
(BE) command is entered by driving CS# low, followed by the command code, and three address bytes on SI.
Any address inside the block is a valid address for the 32KB Block Erase (BE) command. CS# must be driven
low for the entire duration of the sequence.
The 32KB Block Erase command sequence: CS# goes low → sending 32KB Block Erase command → 3-byte
address on SI→ CS# goes high. The command sequence is shown in Figure18. CS# must be driven high after
the eighth bit of the last address byte has been latched in; otherwise the 32KB Block Erase (BE) command is not
executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated.
While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write In
Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when
it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is
reset. A 32KB Block Erase (BE) command applied to a block which is protected by the Block Protect (BP4,
BP3, BP2, BP1 and BP0) bits (see Table1 & Table1a) is not executed.
Figure 18. 32KB Block Erase Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
8
7
9
24 Bits Address
Command
SI
29 30 31
23 22
MSB
52H
1
2
0
Figure 18a. 32KB Block Erase Sequence Diagram (QPI)
CS#
SCLK
0
1
2
3
4
5
6
7
Command
52H
A23-16 A12-8
A7-0
IO0
20 16 12
8
4
0
IO1
21 17 13
9
5
1
IO2
22 18 14 10 6
2
IO3
23 19 15 11 7
3
59 - 31
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.18. 64KB Block Erase (BE) (D8H)
The 64KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit. The 64KB Block Erase
(BE) command is entered by driving CS# low, followed by the command code, and three address bytes on SI.
Any address inside the block is a valid address for the 64KB Block Erase (BE) command. CS# must be driven
low for the entire duration of the sequence.
The 64KB Block Erase command sequence: CS# goes low → sending 64KB Block Erase command → 3-byte
address on SI → CS# goes high. The command sequence is shown in Figure19. CS# must be driven high after
the eighth bit of the last address byte has been latched in; otherwise the 64KB Block Erase (BE) command is not
executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated.
While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write In
Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when
it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is
reset. A 64KB Block Erase (BE) command applied to a block which is protected by the Block Protect (BP4,
BP3, BP2, BP1 and BP0) bits (see Table1 & Table1a) is not executed.
Figure 19. 64KB Block Erase Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
8
7
9
24 Bits Address
Command
SI
29 30 31
23 22
MSB
D8H
2
1
0
Figure 19a. 64KB Block Erase Sequence Diagram (QPI)
CS#
SCLK
0
1
2
3
4
6
5
7
Command
A23-16 A15-8
A7-0
IO0
20 16 12
8
4
0
IO1
21 17 13
9
5
1
IO2
22 18 14 10
6
2
IO3
23 19 15 11
7
3
D8H
59 - 32
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.19. Chip Erase (CE) (60/C7H)
The Chip Erase (CE) command is erased the all data of the chip. A Write Enable (WREN) command must
previously have been executed to set the Write Enable Latch (WEL) bit. The Chip Erase (CE) command is
entered by driving CS# Low, followed by the command code on Serial Data Input (SI). CS# must be driven Low
for the entire duration of the sequence.
The Chip Erase command sequence: CS# goes low → sending Chip Erase command → CS# goes high. The
command sequence is shown in Figure20. CS# must be driven high after the eighth bit of the command code
has been latched in, otherwise the Chip Erase command is not executed. As soon as CS# is driven high, the selftimed Chip Erase cycle (whose duration is tCE) is initiated. While the Chip Erase cycle is in progress, the Status
Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Chip Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle
is completed, the Write Enable Latch (WEL) bit is reset. The Chip Erase (CE) command is executed only if all
Block Protect (BP4, BP3, BP2, BP1 and BP0) bits are set to “None protected”. The Chip Erase (CE) command
is ignored if one or more sectors are protected.
Figure 20. Chip Erase Sequence Diagram
CS#
SCLK
SI
0
1
2
3
4
5
6
7
Command
60H or C7H
Figure 20a. Chip Erase Sequence Diagram (QPI)
CS#
SCLK
0
1
Instruction
IO0
C7H/60H
IO1
IO2
IO3
59 - 33
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.20. Deep Power-Down (DP) (B9H)
Executing the Deep Power-Down (DP) command is the only way to put the device in the lowest consumption
mode (the Deep Power-Down Mode). It can also be used as an extra software protection mechanism, while
the device is not in active use, since in this mode, the device ignores all Write, Program and Erase commands.
Driving CS# high deselects the device, and puts the device in the Standby Mode (if there is no internal cycle
currently in progress). But this mode is not the Deep Power-Down Mode. The Deep Power-Down Mode can
only be entered by executing the Deep Power-Down (DP) command. Once the device has entered the Deep
Power-Down Mode, all commands are ignored except the Release from Deep Power-Down and Read Device
ID (RDI) command. This releases the device from this mode. The Release from Deep Power-Down and Read
Device ID (RDI) command also allows the Device ID of the device to be output on SO.
The Deep Power-Down Mode automatically stops at Power-Down, and the device always Power-Up in
the Standby Mode. The Deep Power-Down (DP) command is entered by driving CS# low, followed by the
command code on SI. CS# must be driven low for the entire duration of the sequence.
The Deep Power-Down command sequence: CS# goes low → sending Deep Power-Down command → CS#
goes high. The command sequence is shown in Figure21. CS# must be driven high after the eighth bit of the
command code has been latched in; otherwise the Deep Power-Down (DP) command is not executed. As soon
as CS# is driven high, it requires a delay of tDP before the supply current is reduced to ICC2 and the Deep PowerDown Mode is entered. Any Deep Power-Down (DP) command, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 21. Deep Power-Down Sequence Diagram
CS#
SCLK
SI
tDP
0 1 2 3 4 5 6 7
Command
Stand-by mode Deep Power-down mode
B9H
Figure 21a. Deep Power-Down Sequence Diagram (QPI)
CS#
SCLK
IO0
0
tDP
1
Command
B9H
IO1
IO2
IO3
Stand-by mode
59 - 34
Deep Power-down mode
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
7.21. Release from Deep Power-Down and Read Device ID (RDI) (ABH)
http://www.elm-tech.com
The Release from Power-Down and Read Device ID is a multi-purpose command. It can be used to release the
device from the Power-Down state or obtain the devices electronic identification (ID) number.
To release the device from the Power-Down state, the command is issued by driving the CS# pin low, shifting
the instruction code “ABH” and driving CS# high as shown in Figure22. Release from Power-Down will take
the time duration of tRES1 (See AC Characteristics) before the device will resume normal operation and other
command are accepted. The CS# pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the Power-Down state, the command is initiated by
driving the CS# pin low and shifting the instruction code “ABH” followed by 3-dummy byte. The Device ID
bits are then shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure23.
The Device ID value for the GD25LQ80 is listed in Manufacturer and Device Identification table. The Device
ID can be read continuously. The command is completed by driving CS# high.
When used to release the device from the Power-Down state and obtain the Device ID, the command is the
same as previously described, and shown in Figure23, except that after CS# is driven high it must remain high
for a time duration of tRES2 (See AC Characteristics). After this time duration the device will resume normal
operation and other command will be accepted. If the Release from Power-Down/Device ID command is issued
while an Erase, Program or Write cycle is in process (when WIP equal 1) the command is ignored and will not
have any effects on the current cycle.
Figure 22. Release Power-Down Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
t RES1
7
Command
SI
ABH
Deep Power-down mode
Stand-by mode
Figure 22a. Release Power-Down Sequence Diagram (QPI)
CS#
SCLK
IO0
0
1
tRES1
Command
ABH
IO1
IO2
IO3
Deep Power-down mode
59 - 35
Stand-by mode
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Figure 23. Release Power-Down and Read Device ID Sequence Diagram
Figure 23a. Release Power-Down and Read Device ID Sequence Diagram (QPI)
CS#
SCLK
0
1
Command
ABH
2
3
4
5
6
7
tRES2
8
IOs switch from
Input to Output
3 Dummy Bytes
IO0
4
0
IO1
5
1
IO2
6
2
IO3
7 3
Device
ID
Deep Power-down mode
59 - 36
Stand-by mode
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.22. Read Manufacture ID/Device ID (REMS) (90H)
The Read Manufacturer/Device ID command is an alternative to the Release from Power-Down/Device ID
command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID.
The command is initiated by driving the CS# pin low and shifting the command code “90H” followed by a
24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on
the falling edge of SCLK with most significant bit (MSB) first as shown in Figure24. If the 24-bit address is
initially set to 000001H, the Device ID will be read first.
Figure 24. Read Manufacture ID/Device ID Sequence Diagram
Figure 24a. Read Manufacture ID/Device ID Sequence Diagram (QPI)
CS#
SCLK
0
1
2
3
4
6
5
Command
9
8
7
10
IOs switch from
Input to Output
IO0
20 16 12
8
A7-0
(00H)
4 0
IO1
21 17 13
9
5
1
5
1
5
1
IO2
22 18 14 10
6
2
6
2
6
2
IO3
23 19 15
7
3
7
3
7
3
90H
A23-16 A15-8
11
4
0
4
0
MID
59 - 37
Device
ID
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.23. Read Manufacture ID/Device ID Dual I/O (92H)
The Read Manufacturer/Device ID Dual I/O command is an alternative to the Release from Power-Down/
Device ID command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID by
dual I/O.
The command is initiated by driving the CS# pin low and shifting the command code “92H” followed by a
24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on
the falling edge of SCLK with most significant bit (MSB) first as shown in Figure25. If the 24-bit address is
initially set to 000001H, the Device ID will be read first.
Figure 25. Read Manufacture ID/Device ID Dual I/O Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
6
4
2
0
6
5
3
1
7
Command
SI(IO0)
92H
SO(IO1)
7
A23-16
4
2
0
6
5
3
1
7
A15-8
4
2
0
6
5
3
1
7
A7-0
4
2
0
5
3
1
M7-0
CS#
SCLK
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SI(IO0)
6
SO(IO1)
7
4
2
0
6
4
2
0
6
5
3
1
7
5
3
1
7
MFR ID
Device ID
4
2
0
6
4
2
0
6
5
3
1
7
5
3
1
7
MFR ID
(Repeat)
Device ID
(Repeat)
59 - 38
4
2
0
6
4
2
0
5
3
1
7
5
3
1
MFR ID
(Repeat)
Device ID
(Repeat)
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.24. Read Manufacture ID/Device ID Quad I/O (94H)
The Read Manufacturer/Device ID Quad I/O command is an alternative to the Release from Power-Down/
Device ID command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID by
quad I/O.
The command is initiated by driving the CS# pin low and shifting the command code “94H” followed by a
24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on
the falling edge of SCLK with most significant bit (MSB) first as shown in Figure26. If the 24-bit address is
initially set to 000001H, the Device ID will be read first.
Figure 26. Read Manufacture ID/Device ID Quad I/O Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
4
0
4
0
4
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
SCLK
Command
SI(IO0)
94H
A23-16 A15-8 A7-0 M7-0
Dummy
MFR ID DID
CS#
SCLK
24 25 26 27 28 29 30 31
SI(IO0)
4
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
HOLD#(IO3) 7
3
7
3
7
3
7
3
MFR ID DID MFR ID DID
(Repeat)(Repeat)(Repeat)(Repeat)
59 - 39
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.25. Read Identification (RDID) (9FH)
The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed by
two bytes of device identification. The device identification indicates the memory type in the first byte, and the
memory capacity of the device in the second byte. The Read Identification (RDID) command while an Erase
or Program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. The Read
Identification (RDID) command should not be issued while the device is in Deep Power-Down Mode.
The device is first selected by driving CS# to low. Then, the 8-bit command code for the command is shifted
in. This is followed by the 24-bit device identification, stored in the memory, being shifted out on Serial Data
Output, each bit being shifted out during the falling edge of Serial Clock. The command sequence is shown in
Figure27. The Read Identification (RDID) command is terminated by driving CS# to high at any time during
data output. When CS# is driven high, the device is put in the Standby Mode. Once in the Standby Mode, the
device waits to be selected, so that it can receive, decode and execute commands.
Figure 27. Read Identification ID Sequence Diagram
CS#
0
SCLK
SI
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
7
6
9FH
SO
MSB
CS#
Manufacturer ID
5 4 3 2 1
0
16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
SCLK
SI
7
SO
Memory Type ID15-ID8
6 5 4 3 2 1 0
MSB
Capacity ID7-ID0
6 5 4 3 2 1
7
0
MSB
Figure 27a. Read Identification ID Sequence Diagram (QPI)
CS#
SCLK
0
1
2
3
4
5
6
IOs switch from
Input to Output
Command
9FH
IO0
4
0
12
8
4
0
IO1
5
1
13
9
5
1
IO2
6
2
14 10 6
2
IO3
7
3
15 11 7
3
MID
59 - 40
ID15-8 ID7-0
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.26. Program/Erase Suspend (PES) (75H)
The Program/Erase Suspend command “75H”, allows the system to interrupt a page program or sector/block
erase operation and then read data from any other sector or block. The Write Status Register command (01H)
and Erase Security Registers (44H, 42H) and Erase commands (20H, 52H, D8H, C7H, 60H) and Page Program
command are not allowed during Program/Erase suspend. Program/Erase Suspend is valid only during the page
program or sector/block erase operation. A maximum of time of “tsus” (See AC Characteristics) is required to
suspend the program/erase operation.
The Program/Erase Suspend command will be accepted by the device only if the SUS2/SUS1 bit in the Status
Register equal to 0 and WIP bit equal to 1 while a Page Program or a Sector or Block Erase operation is ongoing. If the SUS2/SUS1 bit equal to 1 or WIP bit equal to 0, the Suspend command will be ignored by the
device. The WIP bit will be cleared form 1 to 0 within “tsus” and the SUS2/SUS1 bit will be set from 0 to 1
immediately after Program/Erase Suspend. A power-off during the suspend period will reset the device and
release the suspend state. The command sequence is show in Figure28.
Figure 28. Program/Erase Suspend Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
tSUS
Command
75H
High-Z
Accept read command
Figure 28a. Program/Erase Suspend Sequence Diagram (QPI)
CS#
SCLK
IO0
0
1
tSUS
Command
75H
IO1
IO2
IO3
Accept Read
59 - 41
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.27. Program/Erase Resume (PER) (7AH)
The Program/Erase Resume command must be written to resume the program or sector/block erase operation
after a Program/Erase Suspend command. The Program/Erase command will be accepted by the device only if
the SUS2/SUS1 bit equal to 1 and the WIP bit equal to 0. After issued the SUS2/SUS1 bit in the status register
will be cleared from 1 to 0 immediately, the WIP bit will be set from 0 to 1 within 200ns and the Sector or
Block will complete the erase operation or the page will complete the program operation. The Program/Erase
Resume command will be ignored unless a Program/Erase Suspend is active. The command sequence is show in
Figure29.
Figure 29. Program/Erase Resume Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
Command
SI
7AH
SO
Resume Erase/Program
Figure 29a. Program/Erase Resume Sequence Diagram (QPI)
CS#
SCLK
IO0
0
1
Command
7AH
IO1
IO2
IO3
Resume previously suspended
program or Erase
59 - 42
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.28. Erase Security Registers (44H)
The GD25LQ80 provides three 256-byte Security Registers which can be erased and programmed individually.
These registers may be used by the system manufacturers to store security and other important information
separately from the main memory array.
The Erase Security Registers command is similar to Sector/Block Erase command. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit.
The Erase Security Registers command sequence: CS# goes low → sending Erase Security Registers command
→ CS# goes high. The command sequence is shown in Figure30. CS# must be driven high after the eighth bit
of the command code has been latched in; otherwise the Erase Security Registers command is not executed.
As soon as CS# is driven high, the self-timed Erase Security Registers cycle (whose duration is tSE) is initiated.
While the Erase Security Registers cycle is in progress, the Status Register may be read to check the value of the
Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Erase Security Registers
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable
Latch (WEL) bit is reset. The Security Registers Lock Bit (LB3-1) in the Status Register can be used to OTP
protect the security registers. Once the LB bit is set to 1, the Security Registers will be permanently locked; the
Erase Security Registers command will be ignored.
Address
A23-16
A15-12
A11-8
A7-0
Security Register #1
00H
0001
0000
Do not care
Security Register #2
Security Register #3
00H
00H
0010
0011
0000
0000
Do not care
Do not care
Figure 30. Erase Security Registers command Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
8
44H
29 30 31
24 Bits Address
Command
SI
9
23 22
MSB
59 - 43
2
1
0
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.29. Program Security Registers (42H)
The Program Security Registers command is similar to the Page Program command. It allows from 1 to 256
bytes Security Registers data to be programmed. A Write Enable (WREN) command must previously have been
executed to set the Write Enable Latch (WEL) bit before sending the Program Security Registers command. The
Program Security Registers command is entered by driving CS# Low, followed by the command code (42H),
three address bytes and at least one data byte on SI. As soon as CS# is driven high, the self-timed Program
Security Registers cycle (whose duration is tPP) is initiated. While the Program Security Registers cycle is in
progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in
Progress (WIP) bit is 1 during the self-timed Program Security Registers cycle, and is 0 when it is completed. At
some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
If the Security Registers Lock Bit (LB3-1) is set to 1, the Security Registers will be permanently locked.
Program Security Registers command will be ignored.
Address
A23-16
A15-12
A11-8
A7-0
Security Register #1
00H
0001
0000
Byte Address
Security Register #2
00H
0010
0000
Byte Address
Security Register #3
00H
0011
0000
Byte Address
Figure 31. Program Security Registers command Sequence Diagram
CS#
5
6
7
8
24-bit address
3
23 22 21
2
Data Byte 1
0 7
1
MSB
6
5
4
3
2
1
2078
42H
2079
Command
SI
28 29 30 31 32 33 34 35 36 37 38 39
9 10
2076
4
2077
3
2075
2
1
0
0
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2072
MSB
CS#
2073
1
2074
0
SCLK
SCLK
SI
Data Byte 3
Data Byte 2
7
MSB
6
5
4
3
2
1
0 7
6
5
4
3
2
MSB
Data Byte 256
1
0
7
6
5
4
3
2
MSB
59 - 44
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.30. Read Security Registers (48H)
The Read Security Registers command is similar to Fast Read command. The command is followed by a
3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then
the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC,
during the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically
incremented to the next higher address after each byte of data is shifted out. Once the A9-A0 address reaches the
last byte of the register (Byte 3FFH), it will reset to 000H, the command is completed by driving CS# high.
Address
A23-16
A15-12
A11-8
A7-0
Security Register #0
Security Register #1
Security Register #2
00H
00H
00H
0000
0001
0010
0000
0000
0000
Byte Address
Byte Address
Byte Address
Security Register #3
00H
0011
0000
Byte Address
Figure 32. Read Security Registers command Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
8
7
28 29 30 31
24-bit address
Command
SI
9 10
48H
23 22 21
3
2
1
0
High-Z
SO
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
SI
SO
Dummy Byte
7
6
5
4
3
2
1
0
7 6
MSB
59 - 45
Data Out1
5 4 3 2
1
0
Data Out2
7 6 5
MSB
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.31. Set Read Parameters (C0H)
In QPI mode the “Set Read Parameters (C0H)” command can be used to configure the number of dummy
clocks for “Fast Read (0BH)”, “Quad I/O Fast Read (EBH)” and “Burst Read with Wrap (0CH)” command, and
to configure the number of bytes of “Wrap Length” for the “Burst Read with Wrap (0CH)” command. The “Wrap
Length” is set by W5-4 bit in the “Set Burst with Wrap (77H)” command. This setting will remain unchanged
when the device is switched from Standard SPI mode to QPI mode.
P5-P4
Dummy Clocks
Maximum Read Freq.
P1-P0
Wrap Length
00
4
80MHz
00
8-byte
01
10
11
4
6
8
80MHz
120MHz
120MHz
01
10
11
16-byte
32-byte
64-byte
Figure 33. Set Read Parameters command Sequence Diagram
CS#
SCLK
0
1
Command
C0H
2
3
Read
Parameters
IO0
P4 P0
IO1
P5 P1
IO2
P6 P2
IO3
P7 P3
59 - 46
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.32. Burst Read with Wrap (0CH)
The “Burst Read with Wrap (0CH)” command provides an alternative way to perform the read operation with
“Wrap Around” in QPI mode. This command is similar to the “Fast Read (0BH)” command in QPI mode, except
the addressing of the read operation will “Wrap Around” to the beginning boundary of the “Wrap Around” once
the ending boundary is reached. The “Wrap Length” and the number of dummy clocks can be configured by the
“Set Read Parameters (C0H)” command.
Figure 34. Burst Read with Wrap command Sequence Diagram
CS#
0
SCLK
1
2
3
4
6
5
7
8
9
10 11 12 13
14
IOs switch from
Input to output
Command
0CH
IO0
20 16 12
8
4
0
4
0
4
0
4
IO1
21 17 13
9
5
1
5
1
5
1
5
IO2
22 18 14 10
6
2
6
2
6
2
6
23 19 15 11
7
3
7
3
7
3
7
IO3
A23-16
A15-8
A7-0
Dummy* Byte1
Byte2 Byte3
*"Set Read Parameters" Command (C0H)
can set the number of dummy clocks
7.33. Enable QPI (38H)
The device support both Standard/Dual/Quad SPI and QPI mode. The “Enable QPI (38H)” command can
switch the device from SPI mode to QPI mode. See the command Table 2a for all support QPI commands. In
order to switch the device to QPI mode, the Quad Enable (QE) bit in Status Register-1 must be set to 1 first,
and “Enable QPI (38H)” command must be issued. If the QE bit is 0, the “Enable QPI (38H)” command will
be ignored and the device will remain in SPI mode. When the device is switched from SPI mode to QPI mode,
the existing Write Enable Latch and Program/Erase Suspend status, and the Wrap Length setting will remain
unchanged.
Figure 35. Enable QPI mode command Sequence Diagram
CS#
SCLK
SI
0
1
2
3
4
5
6
7
Command
38H
59 - 47
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.34. Disable QPI (FFH)
To exit the QPI mode and return to Standard/Dual/Quad SPI mode, the “Disable QPI (FFH)” command must
be issued. When the device is switched from QPI mode to SPI mode, the existing Write Enable Latch and
Program/Erase Suspend status, and the Wrap Length setting will remain unchanged.
Figure 36. Disable QPI mode command Sequence Diagram
CS#
SCLK
0
1
Command
FFH
IO0
IO1
IO2
IO3
59 - 48
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.35. Enable Reset (66H) and Reset (99H)
If the Reset command is accepted, any on-going internal operation will be terminated and the device will return
to its default power-on state and lose all the current volatile settings, such as Volatile Status Register bits, Write
Enable Latch status (WEL), Program/Erase Suspend status, Read Parameter setting (P7-P0), Continuous Read
Mode bit setting (M7-M0) and Wrap Bit Setting (W6-W4).
The “Enable Reset (66H)” and the “Reset (99H)” commands can be issued in either SPI or QPI mode. The “Reset
(99H)”command sequence as follow: CS# goes low → Sending Enable Reset command → CS# goes high
→ CS# goes low → Sending Reset command → CS# goes high. Once the Reset command is accepted by the
device, the device will take approximately tRST=30µs to reset. During this period, no command will be accepted.
Data corruption may happen if there is an on-going or suspended internal Erase or Program operation when
Reset command sequence is accepted by the device. It is recommended to check the BUSY bit and the SUS bit
in Status Register before issuing the Reset command sequence.
Figure
37. Enable Reset and Reset command Sequence Diagram
Figure 38. Enable Reset and Reset command Sequence Diagram
7.34.
ReadFigure
Serial
Flash
Discoverable
(5AH) Diagram (QPI)
37a.
Enable
Reset and ResetParameter
command Sequence
CS#
SCLK
0
0
1
Command
66H
1
Command
99H
IO0
IO1
IO2
IO3
59 - 49
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
8. ELECTRICAL CHARACTERISTICS
8.1. Power-On Timing
Figure 38. Power-On Timing Sequence Diagram
Table 3. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min
tVSL
VCC(min) To CS# Low
10
tPUW
VWI
Time Delay From VCC(min) To Write Instruction
Write Inhibit Voltage VCC(min)
1
1
Max
Unit
us
10
1.4
ms
V
8.2. Initial Delivery State
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH). The Status
Register contains 00H (all Status Register bits are 0).
8.3. Data Retention and Endurance
Parameter
Minimum Pattern Data Retention Time
Erase/Program Endurance
Test Condition
Min
Unit
150°C
10
Years
125°C
-40 to 85°C
20
100K
Years
Cycles
8.4. Latch Up Characteristics
Parameter
Input Voltage Respect To VSS On I/O Pins
VCC Current
59 - 50
Min
Max
-1.0V
VCC+1.0V
-100mA
100mA
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
8.5. Absolute Maximum Ratings
Parameter
Value
Unit
-40 to 85
°C
-55 to 125
°C
Output Short Circuit Current
200
mA
Applied Input/Output Voltage
-0.6 to VCC+0.4
V
VCC
-0.6 to VCC+ 0.4
V
Ambient Operating Temperature
Storage Temperature
Maximum Negative
Maximum
Overshoot
Negative
Waveform
Overshoot Waveform
0V
0V
-0.6V
-0.6V
20ns
Maximum Positive
Maximum
Overshoot
Positive
Waveform
Overshoot Waveform
20ns
2.35V
2.35V
1.95V
1.95V
20ns
20ns
8.6. Capacitance Measurement Conditions
Symbol
CIN
COUT
CL
Parameter
Min
Typ
Max
Unit
Conditions
6
8
pF
pF
VIN=0V
VOUT=0V
5
0.2VCC to 0.8VCC
pF
ns
V
0.3VCC to 0.7VCC
0.5VCC
V
V
Input Capacitance
Output Capacitance
Load Capacitance
Input Rise And Fall time
Input Pulse Voltage
Input Timing Reference Voltage
30
Output Timing Reference Voltage
Figure 39. Input Test Waveform and Measurement Level
0.8VCC
0.2VCC
Input timing reference level
0.7VCC
0.3VCC
Output timing reference level
AC Measurement Level
0.5VCC
Note: Input pulse rise and fall time ara<5ns
59 - 51
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
8.7. DC Characteristics
(T= -40°C~85°C, VCC=1.65~1.95V)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit.
ILI
Input Leakage Current
±2
μA
ILO
Output Leakage Current
±2
μA
ICC1
Standby Current
CS#=VCC, VIN=VCC or VSS
20
40
μA
ICC2
Deep Power-Down Current
CS#=VCC, VIN=VCC or VSS
1
5
μA
CLK=0.1VCC/0.9VCC at 120MHz,
Q=Open(*1,*2,*4 I/O)
15
20
mA
CLK=0.1VCC/0.9VCC at 80MHz,
Q=Open(*1,*2,*4 I/O)
13
18
mA
25
25
mA
mA
25
25
0.3VCC
mA
mA
V
VCC+0.4
0.2
V
V
V
ICC3
Operating Current (Read)
ICC4
ICC5
Operating Current (PP)
CS#=VCC
Operating Current (WRSR) CS#=VCC
ICC6
ICC7
VIL
Operating Current (SE)
Operating Current (BE)
Input Low Voltage
VIH
VOL
VOH
Input High Voltage
Output Low Voltage
Output High Voltage
CS#=VCC
CS#=VCC
-0.5
0.7VCC
IOL=100μA
IOH=-100μA
VCC-0.2
59 - 52
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
8.8. AC Characteristics
Symbol
(T= -40°C~85°C, VCC=1.65~1.95V, CL=30pf)
Parameter
Min.
fC
Serial Clock Frequency For: 0BH, 3BH, BBH, 6BH, EBH, E7H
DC.
fC
Serial Clock Frequency For:
0BH, 0CH, EBH with QPI mode (4 & 6 & 8 Dummy clocks)
DC.
fR
Serial Clock Frequency For: Read(03H)
DC.
tCLH
tCLL
Serial Clock High Time
Serial Clock Low Time
Typ.
Max.
Unit.
120
MHz
80/120/120 MHz
80
MHz
4
4
ns
ns
tCLCH Serial Clock Rise Time (Slew Rate)
0.2
V/ns
tCHCL Serial Clock Fall Time (Slew Rate)
tSLCH CS# Active Setup Time
0.2
5
V/ns
ns
tCHSH CS# Active Hold Time
tSHCH CS# Not Active Setup Time
5
5
ns
ns
tCHSL CS# Not Active Hold Time
5
ns
tSHSL CS# High Time (Read/Write)
tSHQZ Output Disable Time
20
ns
ns
tCLQX Output Hold Time
tDVCH Data In Setup Time
1.2
2
ns
ns
tCHDX Data In Hold Time
2
ns
tHLCH Hold# Low Setup Time (Relative to Clock)
tHHCH Hold# High Setup Time (Relative to Clock)
tCHHL Hold# High Hold Time (Relative to Clock)
5
5
5
ns
ns
ns
tCHHH Hold# Low Hold Time (Relative to Clock)
tHLQZ Hold# Low To High-Z Output
tHHQX Hold# Low To Low-Z Output
5
ns
ns
ns
6
6
6
tCLQV Clock Low To Output Valid
tWHSL Write Protect Setup Time Before CS# Low
7
20
tSHWL Write Protect Hold Time After CS# High
tDP CS# High To Deep Power-Down Mode
tRES1 CS# High To Standby Mode Without Electronic Signature Read
tRES2 CS# High To Standby Mode With Electronic Signature Read
tSUS CS# High To Next Command After Suspend
tW
Write Status Register Cycle Time
tPP
tSE
tBE
Page Programming Time
Sector Erase Time
Block Erase Time(32K Bytes/64K Bytes)
tCE
Chip Erase Time(GD25LQ80)
59 - 53
100
ns
ns
20
20
ns
μs
μs
5
20
20
15
μs
μs
ms
0.4
60
0.3/0.5
2.4
500
1.0/1.2
ms
ms
s
7
15
s
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Figure 40. Serial Input Timing
tSHSL
CS#
tCHSL
SCLK
tSLCH
tDVCH
tCHSH
MSB
SO
High-Z
tCHCL
tCLCH
tCHDX
SI
tSHCH
LSB
Figure 41. Output Timing
CS#
tCLH
SCLK
tCLQV
tCLQX
tCLQV
tSHQZ
tCLL
tCLQX
LSB
SO
SI
Least significant address bit (LIB) in
Figure 42. Hold Timing
CS#
SCLK
SO
tCHHL
tHLCH
tCHHH
tHLQZ
tHHCH
tHHQX
HOLD#
SI do not care during HOLD operation.
59 - 54
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
9. ORDERING INFORMATION
GD 25 LQ 80 x I G x
Packing Type
Y: Tray
R: Tape & Reel
Green Code
G: Pb Free & Halogen Free Green Package
Temperature Range
I: Industrial(-40°C to +85°C)
Package Type
T: SOP8 150mil
S: SOP8 208mil
N: USON8 (4×3mm)
W: WSON8 (6×5mm)
Density
80: 8Mb
Series
LQ: 1.8V, 4KB Uniform Sector
Product Family
25: SPI Interface Flash
59 - 55
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
10. PACKAGE INFORMATION
10.1. Package SOP8 150MIL
8
�
5
E1
E
L
1
4
L1
C
D
A2
A1
b
e
A
Seating plane
0.10
Dimensions
Symbol
Unit
E1
e
L
L1
θ
ɑ
ß
5.80 3.80
-
0.40
0.85
0°
6°
11°
Nom
4.90 6.00 3.90 1.27
1.06
Max 1.75 0.25 1.55 0.51 0.25 5.03 6.20 4.00
0.90 1.27
Min 0.053 0.002 0.053 0.012 0.006 0.188 0.228 0.149 - 0.016 0.033
8°
0°
7°
8°
6°
12°
13°
11°
Nom
- 0.016 - 0.193 0.236 0.154 0.050 0 0.042
Max 0.069 0.010 0.061 0.020 0.010 0.198 0.244 0.158 - 0.035 0.050
Note: Both package length and width do not include mold flash.
8°
7°
8°
12°
13°
Min
mm
A
A1
A2
b
1.35
0.05
1.35 0.31
c
D
0.15
4.77
E
Inch
59 - 56
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
10.2. Package SOP8 208MIL
8
�
5
E1
E
L1
L
1
4
C
D
A2
Dimensions
Symbol
A1
b
e
A
A
A1
A2
b
C
D
E
E1
e
L
L1
θ
2.16
0.05
0.15
0.25
1.70
1.80
1.91
0.31
0.41
0.51
0.18
0.21
0.25
5.13
5.23
5.33
7.70
7.90
8.10
5.18
5.28
5.38
1.27
-
0.50
0.67
0.85
1.21
1.31
1.41
0°
5°
8°
Min
0.002 0.067 0.012 0.007 0.202 0.303
Inch Nom
0.006 0.071 0.016 0.008 0.206 0.311
Max 0.085 0.010 0.075 0.020 0.010 0.210 0.319
Note: Both package length and width do not include mold flash.
0.204
0.208
0.212
0.050
-
0.020
0.026
0.033
0.048
0.052
0.056
0°
5°
8°
Unit
mm
Min
Nom
Max
59 - 57
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
10.3. Package USON8 (4×3mm)
D
A2
y
E
A
Top View
L
A1
Side View
D1
1
b
E1
e
E1
Bottom View
Dimensions
Symbol
Unit
A
A1
A2
b
D
D1
E
E1
0.50
0.55
0.00
-
0.15
0.25
0.30
2.90
3.00
0.10
0.25
3.90
4.00
0.70
0.80
E2
e
L
0.00
-
0.50
0.60
mm
Min
Nom
Inch
Max 0.60 0.05
0.35 3.10 0.40 4.10 0.90
0.08 0.70
Min 0.020 0.000
0.010 0.114 0.004 0.153 0.027
0.000 0.020
Nom 0.022
0.006 0.012 0.118 0.010 0.157 0.031 0.031BSC 0.031BSC
0.024
Max 0.024 0.002
-
0.014 0.122 0.016 0.161 0.035
0.80BSC 0.80BSC
y
-
0.003 0.028
Note:
1. Both package length and width do not include mold flash.
2. The exposed metal pad area on the bottom of the package is connected to device ground (GND pin), so both
Floating and connecting GND of exposed pad are also available.
59 - 58
Rev.1.0
GD25LQ80xIGx 1.8V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
10.4 Package WSON8 (6×5mm)
D
A2
y
E
A
Top View
L
A1
Side View
D1
b
1
E1
e
Bottom View
Dimensions
Symbol
Unit
A
A1
A2
b
D
D1
E
E1
e
y
L
mm
Min
Nom
0.70
0.75
-
0.19
0.22
0.35
0.42
5.90
6.00
3.25
3.37
4.90
5.00
3.85
3.97
1.27 BSC
0.00
0.04
0.50
0.60
Inch
Max
Min
Nom
0.80
0.028
0.030
0.05
-
0.25
0.007
0.009
0.48
0.014
0.016
6.10
0.232
0.236
3.50
0.128
0.133
5.10
0.193
0.197
4.10
0.151
0.156
0.05 BSC
0.08
0.000
0.001
0.75
0.020
0.024
Max
0.032
0.002
0.010
0.019
0.240
0.138
0.201
0.161
-
0.003
0.030
Note:
1. Both package length and width do not include mold flash.
2. The exposed metal pad area on the bottom of the package is connected to device ground (GND pin), so both
Floating and connecting GND of exposed pad are also available.
59 - 59
Rev.1.0
Similar pages