UTC MMBTH10G-X-AE3-R Rf transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBTH10
NPN SILICON TRANSISTOR
RF TRANSISTOR
DESCRIPTION

The UTC MMBTH10 is designed for using as VHF and UHF
oscillators and VHF Mixer in a tuner of a TV receiver.

ORDERING INFORMATION
Ordering Number
Note:

MMBTH10G-x-AE3-R
MMBTH10G-x-AL3-R
MMBTH10G-x-AN3-R
MMBTH10G-x-AQ3-R
Pin Assignment: E: Emitter
B: Base
Package
SOT-23
SOT-323
SOT-523
SOT-723
C: Collector
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MMBTH10

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°С unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SOT-23
Power Dissipation
SOT-323/SOT-523
SOT-723
Collector current
SYMBOL
VCBO
VCEO
VEBO
RATINGS
30
25
3
225
200
150
50
PC
IC
UNIT
V
V
V
mW
mW
mW
mA
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°С unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Current Gain Bandwidth Product

SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
ICBO
IEBO
hFE
Cob
fT
TEST CONDITIONS
IC=100µA
IC=1mA
IE=10µA
IC=4mA, IB=400µA
VCE=10V, IC=4mA
VCB=25V
VEB=2V
VCE=10V, IC=4mA
VCB=10V, f=1MHZ
VCE=10V, IC=4mA, f=100MHz
MIN
30
25
3
TYP
MAX
500
950
100
100
UNIT
V
V
V
mV
mV
nA
nA
60
0.7
650
pF
MHz
CLASSIFICATION OF hFE
RANK
RANGE
A
60-100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
90-130
C
120-200
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Base Emitter On Voltage, VBE(ON)(V)
Base Emitter Voltage, VBE(SAT) (V)
Collector-Emitter Voltage, VCE(SAT) (V)
Typical Pulsed Current Gain, hFE

Power Dissipation, PD (mW)
Collector Current, ICBO (nA)
MMBTH10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
QW-R206-003.H
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MMBTH10
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Input Admittance
Input Admittance, |Yib| (mmhos)
120
80
gib
40
0
-40
bib
-80
-120
0
200
VCE=10V
IC=5mA
10
8
6
bob
4
gob
2
0
1000
500
Output Admittance
12
VCE=10V
IC=5mA
Output Admittance, |Yob| (mmhos)

100
VCE=10V
IC=5mA
bfb
80
40
0
gfb
-40
-80
-120
0
200
1000
500
Reverse Transfer Admittan
8
Reverse Admittance, |Yrb| (mmhos)
Forward Admittance, |Yfb| (mmhos)
Frequency, f (MHz)
Forward Transfer Admittance
120
VCE=10V
IC=5mA
6
4
-brb
2
-grb
0
0
200
Frequency, f (MHz)
Output Admittance, |Yoe| (mmhos)
Input Admittance, |Yie| (mmhos)
gie
16
12
bie
8
4
0
0
200
500
1000
Frequency, f (MHz)
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Output Admittance
6
VCE=10V
Ic=2mA
20
1000
500
Frequency, f (MHz)
Input Admittance
24
1000
500
200
Frequency, f (MHz)
VCE=10V
Ic=2mA
5
4
boe
3
2
1
goe
0
0
200
500
1000
Frequency, f (MHz)
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MMBTH10
Reverse Admittance, |Yre| (mmhos)
TYPICAL CHARACTERISTICS(Cont.)
Rorward Admittance, |Yfe| (mmhos)

NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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