Renesas N0601N-ZK-E1-AY N-channel mosfet for switching Datasheet

Preliminary Data Sheet
N0601N
R07DS0557EJ0100
Rev.1.00
Nov 07, 2011
N-CHANNEL MOSFET FOR SWITCHING
Description
The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low input capacitance
Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current
ID(DC) = ±100 A
• RoHS Compliant
Ordering Information
Part No.
N0601N-ZK-E1-AY ∗1
Lead Plating
Pure Sn (Tin)
N0601N-ZK-E2-AY ∗1
Packing
Tape
800 p/reel
Package
TO-263
1.39 g TYP.
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗2
Single Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
60
±20
±100
±400
156
1.5
150
−55 to +150
55
300
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
0.80
83.3
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗
2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V, L = 100 μH
R07DS0557EJ0100 Rev.1.00
Nov 07, 2011
Page 1 of 6
N0601N
Chapter Title
Electrical Characteristics (TA = 25°C, all terminals are connected)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance ∗1
Symbol
IDSS
IGSS
VGS(off)
| yfs |
MIN.
TYP.
MAX.
1
±100
4.0
Drain to Source On-state
Resistance ∗1
RDS(on)
3.3
4.2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
7730
560
290
pF
pF
pF
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗1
Reverse Recovery Time
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
35
12
76
14
133
38
38
VDD = 30 V, ID = 50 A,
VGS = 10 V,
RG = 0 Ω
44
ns
ns
ns
ns
nC
nC
nC
V
ns
Reverse Recovery Charge
Qrr
61
nC
2.0
35
1.5
Unit
μA
nA
V
S
mΩ
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 50 A
VGS = 10 V, ID = 50 A
VDD = 48 V,
VGS = 10 V,
ID = 100 A
IF = 100 A, VGS = 0 V
IF = 50 A, VGS = 0 V,
di/dt = 100 A/μ s
∗
Note: 1. Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
VDS
ID
VDS
0
10%
10%
tr
td(off)
Wave Form
τ
VDD
Starting Tch
90%
VDS
VGS
0
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
ton
tf
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
50 Ω
R07DS0557EJ0100 Rev.1.00
Nov 07, 2011
RL
VDD
Page 2 of 6
N0601N
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
TOTAL POWER DISSIPATION vs.
OPERATING AREA
CASE TEMPERATURE
200
120
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
140
100
80
60
40
20
150
100
50
0
0
0
25
50
75
100
125
150
0
175
TC - Case Temperature - °C
25
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID - Drain Current - A
RDS(on) Limited
PW = 300 µs
1 ms
100
10 ms
10
Power Dissipation Limited
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
Single pulse
Rth(ch-A) = 83.3°C/W
100
10
Rth(ch-C) = 0.80°C/W
1
0.1
0.01
0.1 m
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0557EJ0100 Rev.1.00
Nov 07, 2011
Page 3 of 6
N0601N
Chapter Title
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
100
VGS = 10 V
300
TA = 125°C
75°C
25°C
−25°C
10
ID - Drain Current - A
ID - Drain Current - A
400
200
100
Pulsed
0
1
0.1
0.01
VDS = 10 V
Pulsed
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
3
4
5
GATE TO SOURCE CUT-OFF VOLTAGE vs.
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CHANNEL TEMPERATURE
CURRENT
4
100
3
2
1
VDS = 10 V
ID = 1.0 mA
0
-50
0
50
100
150
TA = 125°C
75°C
25°C
−25°C
10
1
0.1
VDS = 10 V
Pulsed
0.01
0.01
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
VGS = 10 V
8
6
4
2
Pulsed
0
1
10
100
ID - Drain Current - A
R07DS0557EJ0100 Rev.1.00
Nov 07, 2011
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
2
VGS - Gate to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
VDS - Drain to Source Voltage - V
1
25
ID = 50 A
Pulsed
20
15
10
5
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Page 4 of 6
N0601N
Chapter Title
DRAIN TO SOURCE ON-STATE RESISTANCE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
8
100000
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
vs. CHANNEL TEMPERATURE
6
4
2
VGS = 10 V
ID = 50 A
Pulsed
0
50
100
150
1000
Coss
VGS = 0 V
f = 1.0 MHz
Crss
0.1
1
10
100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
1000
14
VGS - Gate to Source Voltage - V
td (on), tr, td (off), tf - Switching Time - ns
Ciss
100
0.01
0
-50
10000
tf
td(off)
100
td(on)
10
tr
VDD = 30 V
VGS = 10 V
RG = 0 Ω
12
VDD = 12 V
30 V
48 V
10
8
6
4
2
ID = 100 A
0
1
0.1
1
10
0
100
20
40
60
80
100
120
140
QG - Gate Charge - nC
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
1000
100
10
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
VGS = 10 V
0V
1
0.1
Pulsed
0.01
0
0.4
0.8
1.2
VF(S-D) - Source to Drain Voltage - V
R07DS0557EJ0100 Rev.1.00
Nov 07, 2011
1.6
10
VGS = 0 V
di/dt = 100 A/µs
1
0.1
1
10
100
IF - Diode Forward Current - A
Page 5 of 6
N0601N
Chapter Title
Package Drawing (Unit: mm)
TO-263
4.8 MAX.
1.2±0.3
10.0±0.3
7.8 MIN.
1.3±0.2
0 to 0.25
2.00
1.27±0.2
2.4±0.2
0.5±0.2
2.54
1
0.8±0.1
2
2.3±0.3
9.2±0.3
15.3±0.5
6.7±0.3
4
0.254
3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Equivalent Circuit
Drain
Body
Diode
Gate
Source
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0557EJ0100 Rev.1.00
Nov 07, 2011
Page 6 of 6
Revision History
N0601N Data Sheet
Rev.
Date
Page
1.00
Nov 07, 2011
−
Description
Summary
First Edition Issued
All trademarks and registered trademarks are the property of their respective owners.
C-1
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5.
When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
7.
Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2011 Renesas Electronics Corporation. All rights reserved.
Colophon 1.1
Similar pages