Single N-channel Trench MOSFET 30V, 88.1A, 4.6mΩ General Description Features The MDU1513 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1513 is suitable device for DC/DC Converter and general purpose applications. D D D D D D D D S S S G G S S S VDS = 30V ID = 88.1A @VGS = 10V RDS(ON) < 4.6 mΩ @VGS = 10V < 7.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D G PowerDFN56 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V ±20 V VGSS TC=25oC TC=70oC Continuous Drain Current (1) o TA=25 C 88.1 ID TA=70oC Pulsed Drain Current IDM TC=25 C Power Dissipation o TA=25 C Single Pulse Avalanche Energy Junction and Storage Temperature Range 100 A 62.5 PD TA=70oC (2) A 26.1(3) 20.8(3) o TC=70oC 70.4 40.0 W 5.5(3) 3.5(3) EAS 118 TJ, Tstg -55~150 Symbol Rating RθJA 22.7 RθJC 2.0 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case May. 2011. Version 1.2 1 Unit o C/W MagnaChip Semiconductor Ltd. MDU1513 – Single N-Channel Trench MOSFET 30V MDU1513 Part Number Temp. Range MDU1513URH o -55~150 C Package Packing Quantity Rohs Status PowerDFN56 Tape & Reel 3000 units Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V TJ=55oC VGS = ±20V, VDS = 0V VGS = 10V, ID = 20A Drain-Source ON Resistance Forward Transconductance - 1 - 5 - - ±0.1 - 4.0 4.6 - 5.8 6.7 VGS = 4.5V, ID = 17A - 5.8 7.0 VDS = 5V, ID = 10A - 35 - 20.3 27.0 33.8 9.7 12.9 16.1 - 5.4 - - 4.3 - 1295 1726 2158 TJ=125oC RDS(ON) gfs - V µA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15.0V, ID = 20A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss 127 169 211 Output Capacitance Coss 247 329 411 Turn-On Delay Time td(on) - 9.9 - - 12.1 - - 33.5 - - 9.5 - Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDS = 15.0V, ID = 20A , RG = 3.0Ω tf nC pF ns Rg f=1 MHz - 1.5 2.5 Ω VSD IS = 20A, VGS = 0V - 0.8 1.1 V - 27.3 41.0 ns - 19.7 29.6 nC Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 20A, dl/dt = 100A/µs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 27A, VDD = 27V, VGS = 10V. 3. T < 10sec May. 2011. Version 1.2 2 MagnaChip Semiconductor Ltd. MDU1513 – Single N-Channel Trench MOSFET 30V Ordering Information 12 Drain-Source On-Resistance [mΩ] VGS = 10V 4.0V 3.5V 4.5V ID, Drain Current [A] 40 5.0V 30 20 3.0V 10 0 0.0 0.5 1.0 1.5 2.0 2.5 10 8 VGS = 4.5V 6 4 VGS = 10V 2 0 3.0 5 10 VDS, Drain-Source Voltage [V] 20 25 30 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 100 1.8 ※ Notes : ID = 20.0A ※ Notes : 1. VGS = 10 V 2. ID = 16.0 A 1.6 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 15 ID, Drain Current [A] 1.4 1.2 1.0 80 60 40 20 0.8 TA = 25℃ 0.6 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 30 ※ Notes : ※ Notes : VDS = 5V 1 10 IDR, Reverse Drain Current [A] ID, Drain Current [A] 25 20 15 TA=25℃ 10 5 VGS = 0V TA=25℃ 0 10 -1 10 0 0 1 2 3 4 0.3 5 Fig.5 Transfer Characteristics May. 2011. Version 1.2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDU1513 – Single N-Channel Trench MOSFET 30V 50 2400 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 20A VDS = 15V 2000 Capacitance [pF] VGS, Gate-Source Voltage [V] 8 6 4 Ciss 1600 1200 800 400 0 0 5 10 15 20 25 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 2 Crss 0 30 0 5 10 Q G, Total Gate Charge [nC] 15 20 25 30 VDS, Drain-Source Voltage [V] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 2 100 10 10 ms 90 100 ms 80 DC ID, Drain Current [A] ID, Drain Current [A] 1s 10 s 1 10 Operation in This Area is Limited by R DS(on) 0 10 70 60 50 40 30 20 Single Pulse TJ=Max rated TC=25℃ -1 10 10 -1 10 10 0 1 0 2 10 25 10 50 75 100 125 150 T A, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 Zθ JA(t), Thermal Response 10 0 D=0.5 10 0.2 0.1 -1 0.05 10 0.02 -2 0.01 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC 10 single pulse -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve May. 2011. Version 1.2 4 MagnaChip Semiconductor Ltd. MDU1513 – Single N-Channel Trench MOSFET 30V 10 PowerDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified Dimension MILLIMETERS Min A 0.90 1.10 b 0.33 0.51 C 0.20 0.34 D1 4.50 5.10 D2 - 4.22 E 5.90 6.30 E1 5.50 6.10 E2 - 4.30 e May. 2011. Version 1.2 5 Max 1.27BSC H 0.41 0.71 K 0.20 - L 0.51 0.71 α 0° 12° MagnaChip Semiconductor Ltd. MDU1513 – Single N-Channel Trench MOSFET 30V Package Dimension MDU1513 – Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. May. 2011. Version 1.2 6 MagnaChip Semiconductor Ltd.