Lyontek LY62L102516LL-70SL 1024k x 16 bit low power cmos sram Datasheet

®
LY62L102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
REVISION HISTORY
Revision
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 0.4
Rev. 1.0
Description
Initial Issue
Added SL Spec.
Added ISB1/IDR values when TA = 25℃ and TA = 40℃
Revised FEATURES & ORDERING INFORMATION
Lead free and green package available to Green package
available
Added packing type in ORDERING INFORMATION
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Revised PACKAGE OUTLINE DIMENSION in page 10
Revised Notes item 1 and 2 in page 3
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
Revised ORDERING INFORMATION
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
Issue Date
Feb.20.2008
Jul.2.2008
Mar.30.2009
May.7.2010
Aug.29.2013
®
LY62L102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
FEATURES
GENERAL DESCRIPTION
„ Fast access time : 55/70ns
„ Low power consumption:
Operating current : 45/30mA (TYP.)
Standby current : 10μA (TYP.) LL-version
4μA (TYP.) SL-version
„ Single 2.7V ~ 3.6V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
„ Data retention voltage : 1.2V (MIN.)
„ Green package available
„ Package : 48-pin 12mm x 20mm TSOP-I
48-ball 6mm x 8mm TFBGA
The LY62L102516 is a 16,777,216-bit low power
CMOS static random access memory organized as
1,048,576 words by 16 bits. It is fabricated using
very high performance, high reliability CMOS
technology. Its standby current is stable within the
range of operating temperature.
The LY62L102516 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62L102516 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
PRODUCT FAMILY
Vcc Range
Speed
2.7 ~ 3.6V
55/70ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
10µA(LL)/4µA(SL)
45/30mA
-20 ~ 80℃
2.7 ~ 3.6V
55/70ns
10µA(LL)/4µA(SL)
45/30mA
-40 ~ 85℃
2.7 ~ 3.6V
55/70ns
10µA(LL)/4µA(SL)
45/30mA
Product
Family
LY62L102516
LY62L102516(E
Operating
Temperature
0 ~ 70℃
LY62L102516(I)
)
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
Vcc
Vss
A0-A19
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
CE#
CE2
WE#
OE#
LB#
UB#
SYMBOL
DESCRIPTION
A0 - A19
Address Inputs
DQ0 – DQ15 Data Inputs/Outputs
DECODER
I/O DATA
CIRCUIT
1024Kx16
MEMORY ARRAY
CE#, CE2
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB#
Lower Byte Control
UB#
Upper Byte Control
VCC
Power Supply
VSS
Ground
COLUMN I/O
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY62L102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
PIN CONFIGURATION
A
LB# OE#
A0
A1
B
DQ8 UB#
A3
A4
CE# DQ0
C
DQ9 DQ10 A5
A6
DQ1 DQ2
D
Vss DQ11 A17
A7
DQ3 Vcc
E
Vcc DQ12 NC
A16 DQ4 Vss
F
DQ14 DQ13 A14
A15 DQ5 DQ6
G
DQ15 A19
A12
A13 WE# DQ7
A10
H
A18
A8
A9
1
2
3
4
TFBGA
A2
CE2
A11
NC
5
6
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
VT1
VT2
TA
TSTG
PD
IOUT
RATING
-0.5 to 4.6
-0.5 to VCC+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY62L102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
CE2
OE#
WE#
LB#
UB#
H
X
X
L
L
L
L
L
L
L
L
X
L
X
H
H
H
H
H
H
H
H
X
X
X
H
H
L
L
L
X
X
X
X
X
X
H
H
H
H
H
L
L
L
X
X
H
L
X
L
H
L
L
H
L
X
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
SUPPLY CURRENT
DQ0-DQ7 DQ8-DQ15
High – Z
High – Z
ISB,ISB1
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
ICC,ICC1
High – Z
High – Z
DOUT
High – Z
ICC,ICC1
DOUT
High – Z
DOUT
DOUT
DIN
High – Z
ICC,ICC1
DIN
High – Z
DIN
DIN
H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
VCC
*1
Input High Voltage
VIH
*2
Input Low Voltage
VIL
Input Leakage Current
ILI
VCC ≧ VIN ≧ VSS
Output Leakage
VCC ≧ VOUT ≧ VSS,
ILO
Current
Output Disabled
Output High Voltage
VOH IOH = -1mA
Output Low Voltage
VOL
IOL = 2mA
Cycle time = Min.
- 55
CE# = VIL and CE2 = VIH
ICC
II/O = 0mA
- 70
Other pins at VIL or VIH
Average Operating
Power supply Current
Cycle time = 1µs
CE#≦0.2V and CE2≧VCC-0.2V
ICC1
II/O = 0mA
other pins at 0.2V or VCC-0.2V
CE# = VIH or CE2 = VIL
ISB
Other pins at VIL or VIH
LL
LLE
LLI
CE# ≧VCC-0.2V
Standby Power
*5
SL
25℃
Supply Current
or CE2≦0.2V
*5
SLE
ISB1
Other pins at 0.2V
*5
40℃
SLI
or VCC-0.2V
SL
SLE
SLI
MIN.
2.7
2.2
- 0.2
-1
*4
MAX.
3.6
VCC+0.3
0.6
1
UNIT
V
V
V
µA
-1
-
1
µA
2.2
-
2.7
-
0.4
V
V
-
45
60
mA
-
30
45
mA
-
8
16
mA
-
0.3
2
mA
-
10
10
10
60
80
100
µA
µA
µA
-
4
6
µA
-
4
6
µA
-
4
4
4
30
30
40
µA
µA
µA
Notes:
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
TYP.
3.0
-
®
LY62L102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
Typical values are measured at VCC = VCC(TYP.) and TA = 25℃
5. This parameter is measured at VCC = 3.0V
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
MAX
6
8
-
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
SYM.
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
tBA
tBHZ*
tBLZ*
SYM.
tWC
tAW
tCW
tAS
tWP
tWR
tDW
tDH
tOW*
tWHZ*
tBW
LY62L102516-55
MIN.
MAX.
55
55
55
30
10
5
20
20
10
55
25
10
-
LY62L102516-70
MIN.
MAX.
70
70
70
35
10
5
25
25
10
70
30
10
-
UNIT
LY62L102516-55
MIN.
MAX.
55
50
50
0
45
0
25
0
5
20
45
-
LY62L102516-70
MIN.
MAX.
70
60
60
0
55
0
30
0
5
25
60
-
UNIT
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
LY62L102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
CE2
LB#,UB#
tBA
OE#
tOE
tOH
tOHZ
tBHZ
tCHZ
tOLZ
tBLZ
tCLZ
Dout
High-Z
Data Valid
High-Z
Notes :
1.WE#is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low, CE2 = high, LB# or UB# = low.
3.Address must be valid prior to or coincident with CE# = low, CE2 = high, LB# or UB# = low transition; otherwise tAA is the limiting
parameter.
4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
5
®
LY62L102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
tWC
Address
tAW
CE#
tCW
CE2
tBW
LB#,UB#
tAS
tWP
tWR
WE#
tWHZ
Dout
TOW
High-Z
(4)
tDW
Din
(4)
tDH
Data Valid
WRITE CYCLE 2 (CE# and CE2 Controlled) (1,2,5,6)
tWC
Address
tAW
CE#
tAS
tWR
tCW
CE2
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6
®
LY62L102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
WRITE CYCLE 3 (LB#,UB# Controlled) (1,2,5,6)
tWC
Address
tAW
tWR
CE#
tAS
tCW
CE2
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Notes :
1.WE#,CE#, LB#, UB# must be high or CE2 must be low during all address transitions.
2.A write occurs during the overlap of a low CE#, high CE2, low WE#, LB# or UB# = low.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#, LB#, UB# low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain
in a high impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
7
®
LY62L102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
VCC for Data Retention
VDR
CE#≧VCC - 0.2V or CE2≦0.2V
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
tRC* = Read Cycle Time
IDR
tCDR
LL
LLE
LLI
VCC = 1.2V
SL 25℃
CE# ≧VCC-0.2V or CE2≦0.2V
SLE
other pins at 0.2V or VCC-0.2V
SLI 40℃
SL/SLE
SLI
See Data Retention
Waveforms (below)
MIN.
1.2
-
TYP.
4
4
4
MAX.
3.6
50
60
80
UNIT
V
µA
µA
µA
-
2.5
5
µA
-
2.5
5
-
2.5
2.5
30
40
µA
µA
µA
0
-
-
ns
tRC*
-
-
ns
tR
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1) (CE# controlled)
VDR ≧ 1.2V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE#
VIH
tR
CE# ≧ Vcc-0.2V
VIH
Low Vcc Data Retention Waveform (2) (CE2 controlled)
VDR ≧ 1.2V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE2
tR
CE2 ≦ 0.2V
VIL
VIL
Low Vcc Data Retention Waveform (3) (LB#, UB# controlled)
VDR ≧ 1.2V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
LB#,UB#
VIH
tR
LB#,UB# ≧ Vcc-0.2V
VIH
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
8
®
LY62L102516
Rev. 1.0
1024K X 16 BIT LOW POWER CMOS SRAM
PACKAGE OUTLINE DIMENSION
48-pin 12mm x 20mm TSOP-I Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
9
®
LY62L102516
Rev. 1.0
1024K X 16 BIT LOW POWER CMOS SRAM
48-ball 6mm × 8mm TFBGA Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10
®
LY62L102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
ORDERING INFORMATION
Package Type
Access Time
(Speed)(ns)
48-Pin 12mmx20mm 55
TSOP-I
Power
Type
Special
Ultra Low Power
Temperature
Range(℃)
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
70
Special
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Packing
Type
Tray
LY62L102516LL-55SL
Tape Reel
LY62L102516LL-55SLT
Tray
LY62L1025616LL-55SLE
Tape Reel
LY62L102516LL-55SLET
Tray
LY62L102516LL-55SLI
Tape Reel
LY62L102516LL-55SLIT
Tray
LY62L102516LL-55LL
Tape Reel
LY62L102516LL-55LLT
Tray
LY62L102516LL-55LLE
Tape Reel
LY62L102516LL-55LLET
Tray
LY62L102516LL-55LLI
Tape Reel
LY62L102516LL-55LLIT
Tray
LY62L102516LL-70SL
Tape Reel
LY62L102516LL-70SLT
Tray
LY62L102516LL-70SLE
Tape Reel
LY62L102516LL-70SLET
Tray
LY62L102516LL-70SLI
Tape Reel
LY62L102516LL-70SLIT
Tray
LY62L102516LL-70LL
Tape Reel
LY62L102516LL-70LLT
Tray
LY62L102516LL-70LLE
Tape Reel
LY62L102516LL-70LLET
Tray
LY62L102516LL-70LLI
Tape Reel
LY62L102516LL-70LLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
11
Lyontek Item No.
®
LY62L102516
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
ORDERING INFORMATION
Package Type
Access Time
(Speed)(ns)
48-ball 6mmx8mm
TFBGA
55
Power
Type
Special
Ultra Low Power
Temperature
Range(℃)
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
70
Special
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Packing
Type
Tray
LY62L102516GL-55SL
Tape Reel
LY62L102516GL-55SLT
Tray
LY62L1025616GL-55SLE
Tape Reel
LY62L102516GL-55SLET
Tray
LY62L102516GL-55SLI
Tape Reel
LY62L102516GL-55SLIT
Tray
LY62L102516GL-55LL
Tape Reel
LY62L102516GL-55LLT
Tray
LY62L102516GL-55LLE
Tape Reel
LY62L102516GL-55LLET
Tray
LY62L102516GL-55LLI
Tape Reel
LY62L102516GL-55LLIT
Tray
LY62L102516GL-70SL
Tape Reel
LY62L102516GL-70SLT
Tray
LY62L102516GL-70SLE
Tape Reel
LY62L102516GL-70SLET
Tray
LY62L102516GL-70SLI
Tape Reel
LY62L102516GL-70SLIT
Tray
LY62L102516GL-70LL
Tape Reel
LY62L102516GL-70LLT
Tray
LY62L102516GL-70LLE
Tape Reel
LY62L102516GL-70LLET
Tray
LY62L102516GL-70LLI
Tape Reel
LY62L102516GL-70LLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
12
Lyontek Item No.
®
LY62L102516
Rev. 1.0
1024K X 16 BIT LOW POWER CMOS SRAM
THIS PAGE IS LEFT BLANK INTENTIONALLY.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
13
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