Diodes FZT493A 60v npn medium power high gain transistor in sot223 Datasheet

A Product Line of
Diodes Incorporated
FZT493A
60V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223
Features
Mechanical Data









BVCEO > 60V
IC = 1A High Continuous Collector Current
ICM = 2A Peak Pulse Current
High Gain Device > 500 at IC =150mA
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT223



Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
C
B
E
Top View
Equivalent Circuit
Top View
Pin-Out
Ordering Information (Note 4)
Product
FZT493ATA
Notes:
Marking
FZT493A
Reel size (inches)
7
Tape width (mm)
12mm
Quantity per reel
1,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
FZT
493A
FZT493A
Document number: DS37545 Rev. 1 - 2
YWW
SOT223
FZT 493A = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
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FZT493A
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
VCBO
120
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
IC
1
A
ICM
2
A
Value
2
3
62.5
41.7
39
-55 to +150
Unit
W
W
°C/W
°C/W
°C/W
°C
Collector-Base Voltage
Continuous Collector Current
Peak Pulse Current
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
PD
RθJA
RθJL
TJ, TSTG
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
Value
Unit
JEDEC Class
ESD HBM
ESD MM
4,000
400
V
V
3A
C
5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT493A
Document number: DS37545 Rev. 1 - 2
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Thermal Characteristics and Derating Information
FZT493A
Document number: DS37545 Rev. 1 - 2
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Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
Characteristic
BVCBO
120


V
IC = 100 µA
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
60


V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
7


V
IE = 100 µA
ICBO


100
nA
VCB = 45V
Collector Cut-Off Current
ICES


100
nA
VCES = 45V
Emitter Cut-Off Current
IEBO


100
nA
VEB = 5V
mV
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
Collector-Base Cut-Off Current
Test Condition
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)


250
500
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)


1.15
V
IC = 1A, IB = 100mA
VBE(on)


1.0
V
IC = 1A, VCE = 10V
hFE
300
500
300
100
20

1200

IC = 1mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 250mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 1A, VCE = 10V
fT
150


MHz
IC = 50mA, VCE = 10V
f=100MHz
Cobo

10

pF
Base-Emitter Turn-On Voltage (Note 9)
DC Current Gain (Note 9)
Transitional Frequency
Output Capacitance
Note:
VCB= 10V, f=1MHz
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
FZT493A
Document number: DS37545 Rev. 1 - 2
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.40
Tamb=25°C
0.35
0.30
100m
100°C
VCE(SAT) (V)
VCE(SAT) (V)
IC/IB=50
IC/IB=100
IC/IB=50
IC/IB=10
10m
0.25
0.20
25°C
0.15
0.10
-55°C
0.05
1m
10m
100m
IC Collector Current (A)
1
1m
10m
100m
IC Collector Current (A)
VCE(SAT) v IC
1
VCE(SAT) v IC
1400
1.0
1000
25°C
0.8
800
0.6
600
-55°C
0.4
400
0.2
0.0
1m
200
10m
100m
IC Collector Current (A)
1
1.0
1200
0
VBE(SAT) (V)
100°C
Typical Gain (hFE)
Normalised Gain
1.2
VCE=10V
0.8
0.6
IC/IB=50
-55°C
25°C
100°C
0.4
0.2
1m
10m
100m
IC Collector Current (A)
1
VBE(SAT) v IC
hFE v IC
1.0
VCE=10V
VBE(ON) (V)
0.8
-55°C
0.6
25°C
100°C
0.4
0.2
1m
10m
100m
IC Collector Current (A)
1
VBE(ON) v IC
FZT493A
Document number: DS37545 Rev. 1 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
Q
b1
C
E
E1
Gauge
Plane
0.25
Seating
Plane
e1
L
b
A
A1
0°
-1
0°
e
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
7°
7°
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
C1
Dimensions Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
Y2
Y
X
FZT493A
Document number: DS37545 Rev. 1 - 2
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FZT493A
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Copyright © 2015, Diodes Incorporated
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Document number: DS37545 Rev. 1 - 2
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