CYSTEKEC MTB012N10RQ8 N-channel enhancement mode power mosfet Datasheet

Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 1/9
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB012N10RQ8
Features
 Single Drive Requirement
 Low On-resistance
 Fast Switching Characteristic
 Repetitive Avalanche Rated
 Pb-free & Halogen-free package
Symbol
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=8A
100V
10A
10.3 mΩ(typ)
12.3 mΩ(typ)
Outline
MTB012N10RQ8
D
D
SOP-8
D
D
G
G：Gate
D：Drain
S：Source
Pin 1
S
S
S
Ordering Information
Device
MTB012N10RQ8-0-T3-G
Package
SOP-8
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB012N10RQ8
CYStek Product Specification
Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Tc=25C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25C, VGS=10V
Continuous Drain Current @ TA=70C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=2mH, ID=18A, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
TA=25 C
Total Power Dissipation
TA=70 C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
VDS
VGS
100
±20
10
8
40 *1
40
324 *3
1.6 *2
3.1
2
-55~+150
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Unit
V
A
mJ
W
C
*2. Duty cycle ≤ 1%
*3. 100% tested by conditions of L=2mH, IAS=10A, VGS=10V, VDD=25V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
Symbol
RθJC
RθJA
Value
20
40
Unit
C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
MTB012N10RQ8
Min.
Typ.
Max.
100
1
-
19.8
10.3
12.3
2.5
±100
1
25
13.5
18.5
-
49.2
9.0
5.3
3015
182
12
-
Unit
V
S
nA
μA
mΩ
Test Conditions
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=5A
VGS=±20V
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=125C
VGS =10V, ID=10A
VGS =4.5V, ID=8A
nC
VDS=80V, VGS=10V, ID=10A
pF
VDS=50V, VGS=0V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 3/9
Characteristics (Cont. TC=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Dynamic
td(ON) *1, 2
18.4
tr
17.8
*1, 2
ns
td(OFF) *1, 2
61.6
tf *1, 2
8.2
Source-Drain Diode Ratings and Characteristics
IS *1
10
A
ISM *3
40
VSD *1
0.79
1.2
V
trr
35
ns
Qrr
57
nC
Test Conditions
VDS=50V, ID=10A, VGS=10V, RGS=3Ω
IS=10A, VGS=0V
IF=10A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTB012N10RQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
36
10V,9V,8V,7V,6V,5V
32
4V
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current(A)
40
28
24
20
3V
16
12
8
2.5V
4
VGS=2V
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
0.4
-75 -50 -25
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VGS=4.5V
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
100
VGS=10V
1.0
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
3.2
450
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=10A
400
350
300
250
200
150
100
50
2.8
VGS=10V, ID=10A
RDS(ON) @Tj=25°C : 10.3mΩ typ.
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
0
MTB012N10RQ8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
Ciss
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
1000
Coss
100
10
Crss
f=1MHz
1
0
10
20
30
40
VDS, Drain-Source Voltage(V)
1.2
ID=1mA
1.0
0.8
0.6
ID=250μA
0.4
-75 -50 -25
50
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=10V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
100
10
VDS=15V
1
0.1
Pulsed
Ta=25°C
0.01
0.001
8
6
4
VDS=80V
2
ID=10A
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
5
10
15 20 25 30 35 40
Qg, Total Gate Charge(nC)
45
50
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
12
100
ID, Maximum Drain Current(A)
RDS(ON)
Limited
ID, Drain Current(A)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
10
100μs
1ms
1
10ms
TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
0.1
100ms
1s
DC
10
8
6
4
2
TA=25°C,RθJA=40°C/W,VGS=10V
0
0.01
0.01
MTB012N10RQ8
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
40
300
VDS=10V
36
TJ(MAX) =150°C
TA=25°C
RθJA=40°C/W
250
32
28
Power (W)
ID, Drain Current (A)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
24
20
16
200
150
100
12
8
50
4
0
0
1
2
3
4
5
6
7
8
VGS, Gate-Source Voltage(V)
9
10
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
r(t), Normalized Effective Transient Thermal
Resistance
10
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM -TA=PDM *RθJA(t)
4.RθJA=40°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB012N10RQ8
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB012N10RQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB012N10RQ8
CYStek Product Specification
Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
B012
N10R
Date Code
Date Code(counting from left to right) :
1st code: year code, the last digit of Christian year
2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D
May→E, Jun→F, Jul→G, Aug→H, Sep→J,
Oct→K, Nov→L, Dec→M
3rd and 4th codes : prodcution serial number, 01~99
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB012N10RQ8
CYStek Product Specification