AOSMD AO4496L N-channel enhancement mode field effect transistor Datasheet

AO4496
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4496/L uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a DC-DC converter
application. AO4496 and AO4496L are electrically
identical.
VDS (V) = 30V
(VGS = 10V)
ID = 10A
RDS(ON) < 19.5mΩ (VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 26mΩ
UIS TESTED!
Rg, Ciss, Coss, Crss Tested
-RoHS Compliant
-AO4496L is Halogen Free
D
S
D
S
D
S
D
G
D
G
S
SOIC-8
Absolute Maximum Ratings TJ=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
B
Avalanche Current G
Repetitive avalanche energy L=0.1mH
Power Dissipation
A
G
TA=25°C
±20
V
ID
IDM
7.5
IAR
17
EAR
14
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
mJ
3.1
W
2.0
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
A
50
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
10
TA=70°C
Pulsed Drain Current
30
Maximum
RθJA
RθJL
-55 to 150
Typ
31
59
16
Max
40
75
24
°C
Units
°C/W
°C/W
°C/W
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AO4496
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = 250µA, VGS = 0V
1
TJ = 55°C
5
Gate-Body leakage current
VDS = 0V, VGS = ±20V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = 250µA
1.4
ID(ON)
On state drain current
VGS = 10V, VDS = 5V
50
±100
VGS = 10V, ID = 10A
TJ=125°C
VDS = 5V, ID = 10A
30
0.76
Output Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
550
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=10A
3
µA
nA
V
A
26
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
19.5
29
Diode Forward Voltage
IS = 1A,VGS = 0V
Maximum Body-Diode Continuous Current
Crss
16
21
VSD
Coss
2.5
24
Forward Transconductance
IS
1.8
VGS = 4.5V, ID = 7.5A
gFS
Units
V
VDS = 30V, VGS = 0V
Static Drain-Source On-Resistance
Max
30
IGSS
RDS(ON)
Typ
mΩ
S
1
V
3
A
715
pF
110
pF
55
pF
4
5.5
Ω
9.8
13
nC
4.6
6.1
nC
1.8
nC
Gate Drain Charge
2.2
nC
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, RL= 1.5Ω,
RGEN=3Ω
3.2
ns
24
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=100A/µs
22
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
14
6
ns
29
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
0
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C.
Rev2: July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
10V
VDS= 5V
4.5V
4V
40
40
30
ID(A)
ID (A)
30
3.5V
20
20
10
125°C
10
VGS= 3V
25°C
0
0
0
1
2
3
4
5
1
26
Normalized On-Resistance
RDS(ON) (mΩ)
3
4
5
1.8
24
VGS= 4.5V
22
20
18
VGS= 10V
16
14
0
5
10
15
VGS= 10V
ID= 10A
1.6
1.4
VGS= 4.5V
ID= 7.5A
1.2
1.0
0.8
IF=-6.5A,
dI/dt=100A/µs
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+02
50
ID= 10A
45
1E+01
1E+00
40
1E-01
35
IS (A)
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
125°C
30
1E-02
125°C
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER
1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL
25
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-04
20
25°C
25°C
OUT OF SUCH APPLICATIONS OR USES OF
ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,
1E-05
FUNCTIONS
15 AND RELIABILITY WITHOUT NOTICE.
1E-06
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
10
VDS= 15V
ID= 10A
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
600
400
200
Coss
Crss
0
0
0
2
4
6
8
0
10
5
10
15
20
TJ(Max)=150°C
TA=25°C
10µs
1ms
RDS(ON)
limited
1
10ms
100ms
10s
0.1
TJ(Max)=150°C
TA=25°C
10
100
VDS (Volts)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.01
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1
10
1
0.0001
IF=-6.5A, dI/dt=100A/µs
1
10
100
DC
0.01
0.1
Power (W)
100µs
10
ID (Amps)
30
1000
100
ZθJA Normalized Transient
Thermal Resistance
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT
SingleNOTICE.
Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4496
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
Rg
+
VDC
90%
Vdd
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
Rg
-
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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