DMPH1006UPSQ Green 12V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI5060-8 Product Summary Features BVDSS RDS(ON) -12V 6mΩ @ VGS = -4.5V 8mΩ @ VGS = -2.5V ID TA = +25°C -80A -70A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Notebook Battery Power Management DC-DC Converters Load Switch Case: PowerDI5060-8 Case Material: Molded Plastic, ―Green‖ Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D PowerDI5060-8 Pin1 G S D S D S D G D S Top View Top View Pin Configuration Internal Schematic Bottom View Ordering Information (Note 5) Part Number DMPH1006UPSQ-13 Notes: Case PowerDI5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information PH1006US YY WW = Manufacturer’s Marking PH1006US = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) POWERDI is a registered trademark of Diodes Incorporated. DMPH1006UPSQ Document number: DS39099 Rev. 1 - 2 1 of 7 www.diodes.com August 2016 © Diodes Incorporated DMPH1006UPSQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TC = +25°C TC = +100°C Continuous Drain Current (Note 8) VGS = -4.5V Value -12 ±8 -80 -60 -140 -3.6 -18 -17 ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) Avalanche Current, L=0.1mH (Note 9) Avalanche Energy, L=0.1mH (Note 9) IDM IS IAS EAS Unit V V A A A A mJ Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 6) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) RJA Total Power Dissipation (Note 7) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 7) RJA Thermal Resistance, Junction to Case (Note 8) Operating and Storage Temperature Range Electrical Characteristics RJC TJ, TSTG Value 1.8 86 74 3.2 47 40 1.0 -55 to +175 Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -12V, VGS = 0V VGS = 8V, VDS = 0V VGS(TH) RDS(ON) VSD — 4 5 -0.7 -1 6 8 -1.1 V Static Drain-Source On-Resistance -0.4 — — — VDS = VGS, ID = -250µA VGS = -4.5V, ID = -15A VGS = -2.5V, ID = -10A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 6,334 1094 895 3.5 124 72 9 17 11 21 105 94 27 10 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -8V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = -10V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = -10V, ID = -20A ns VGS = -4.5V, VDD = -10V, Rg = 1, ID = -10A ns nC IF = -10A, di/dt = -100A/µs IF = -10A, di/dt = -100A/µs 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMPH1006UPSQ Document number: DS39099 Rev. 1 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated DMPH1006UPSQ 30.0 30 25.0 25 VGS = -1.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = -5V VGS = -2.0V 20.0 VGS = -2.5V VGS = -4.5V VGS = -8.0V 15.0 10.0 VGS = -1.2V 5.0 20 15 TJ=85℃ TJ=125℃ 10 TJ=150℃ TJ=175℃ 5 TJ=25℃ VGS = -1.0V TJ=-55℃ 0.0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VGS = -2.5V 0.005 0.004 VGS = -4.5V 0.004 0.003 10 15 20 25 1.4 1.7 30 0.08 0.06 ID = -15A 0.04 ID = -10A 0.02 0 0 2 4 6 8 ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage Figure 4. Typical Transfer Characteristic 1.5 0.007 VGS = -4.5V 0.0065 175℃ 0.006 RDS(ON), DRAIN-SOURCE ONRESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.1 Figure 2. Typical Transfer Characteristic 0.006 5 0.8 VGS, GATE-SOURCE VOLTAGE (V) 0.006 0.005 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 150℃ 0.0055 0.005 125℃ 0.0045 85℃ 0.004 25℃ 0.0035 0.003 -55℃ 0.0025 0.002 1.4 1.3 1.2 VGS = -4.5V, ID = -15A 1.1 1 0.9 0.8 VGS = -2.5V, ID = -10A 0.7 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMPH1006UPSQ Document number: DS39099 Rev. 1 - 2 3 of 7 www.diodes.com August 2016 © Diodes Incorporated 0.008 0.007 VGS = -2.5V, ID = -10A 0.006 0.005 0.004 0.9 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMPH1006UPSQ VGS = -4.5V, ID = -15A 0.003 0.8 0.7 ID = -1mA 0.6 0.5 ID = -250μA 0.4 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature -50 0 25 50 75 Figure 8. Gate Threshold Variation vs. Junction Temperature 100000 f=1MHz VGS = 0V CT, JUNCTION CAPACITANCE (pF) 25 20 15 TJ = 85oC 10 TJ = 125oC TJ = 150oC TJ = 175oC 5 TJ = 25oC TJ = -55oC Ciss 10000 Coss 1000 0 Crss 100 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 3 6 9 12 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 1000 8 ID, DRAIN CURRENT (A) RDS(ON) Limited 6 VGS (V) 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) 30 IS, SOURCE CURRENT (A) -25 4 VDS = -10V, ID = -20A 2 0 PW =1ms 20 40 60 80 100 Qg (nC) Figure 11. Gate Charge 120 140 PW =10µs PW =1µs 100 PW =10ms 10 1 0 PW =100µs PW =100ms DC TJ(Max) = 175℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS= -4.5V 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 12. SOA, Safe Operation Area POWERDI is a registered trademark of Diodes Incorporated. DMPH1006UPSQ Document number: DS39099 Rev. 1 - 2 4 of 7 www.diodes.com August 2016 © Diodes Incorporated DMPH1006UPSQ r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t) = r(t) * RθJC RθJC = 1.00℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 10 100 1000 POWERDI is a registered trademark of Diodes Incorporated. DMPH1006UPSQ Document number: DS39099 Rev. 1 - 2 5 of 7 www.diodes.com August 2016 © Diodes Incorporated DMPH1006UPSQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10º 12º 11º Θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X G Y(4x) Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 POWERDI is a registered trademark of Diodes Incorporated. DMPH1006UPSQ Document number: DS39099 Rev. 1 - 2 6 of 7 www.diodes.com August 2016 © Diodes Incorporated DMPH1006UPSQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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