IRFH7932PbF HEXFET® Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS(on) max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering l l l l l l l l Orderable part number Package Type IRFH7932TRPbF IRFH7932TR2PbF S S S D D G D D PQFN Standard Pack Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 PQFN 5mm x 6mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current 104 IDM PD @TA = 70°C TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range PD @TA = 25°C V 25 c Power Dissipation g Power Dissipation g Units A 200 3.4 W 2.2 g W/°C 0.03 -55 to + 150 °C Thermal Resistance Parameter f RθJC Junction-to-Case RθJA Junction-to-Ambient Notes through 1 g Typ. Max. ––– 2.2 ––– 37 Units °C/W are on page 9 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 IRFH7932PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ΔΒVDSS/ΔTJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient 30 ––– ––– 0.021 ––– ––– V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 2.5 3.3 3.3 3.9 mΩ VGS(th) ΔVGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient 1.35 ––– 1.8 -5.9 2.35 V VDS = VGS, ID = 100μA ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA VGS = 20V VGS = -20V gfs Qg Forward Transconductance Total Gate Charge 59 ––– ––– 34 ––– 51 S VDS = 15V, ID = 20A Qgs1 Qgs2 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 7.9 3.6 ––– ––– Qgd Qgodr Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 11 12 ––– ––– Output Charge ––– ––– 15 19 ––– ––– RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 0.7 20 ––– ––– tr td(off) tf Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– 48 23 20 ––– ––– ––– Ciss Coss Input Capacitance Output Capacitance ––– ––– 4270 830 ––– ––– Crss Reverse Transfer Capacitance ––– 420 ––– Qsw Qoss nC nC VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A e e VDS = 15V VGS = 4.5V ID = 20A See Fig.17 & 18 VDS = 16V, VGS = 0V Ω VDD = 15V, VGS = 4.5V ns pF ID = 20A RG=1.8Ω See Fig.15 VGS = 0V VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. ––– Max. 16 Units mJ ––– 20 A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Min. Typ. Max. Units ––– ––– Conditions MOSFET symbol 4.2 A showing the integral reverse D G ––– 200 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 21 33 32 50 ns nC TJ = 25°C, IF = 20A, VDD = 15V di/dt = 300A/μs See Fig.16 ton Forward Turn-On Time c 2 www.irf.com © 2013 International Rectifier S e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Submit Datasheet Feedback December 16, 2013 IRFH7932PbF 1000 1000 100 BOTTOM 10 TOP 1 0.1 2.3V ≤ 60μs PULSE WIDTH Tj = 25°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 1 10 BOTTOM 10 2.3V 1 ≤ 60μs PULSE WIDTH Tj = 150°C 0.1 0.01 0.1 100 0.1 100 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 100 T J = 150°C 10 T J = 25°C 1 0.1 VDS = 15V ≤ 60μs PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V www.irf.com © 2013 International Rectifier 5.0 ID = 25A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback December 16, 2013 IRFH7932PbF 100000 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C, Capacitance (pF) C oss = C ds + C gd 10000 Ciss Coss 1000 Crss ID= 20A 12 VDS= 24V VDS= 15V 10 8 6 4 2 0 100 1 10 0 100 20 40 60 80 100 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100 T J = 150°C 10 T J = 25°C 1 100μsec 1msec 10 10msec 1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 www.irf.com © 2013 International Rectifier 1.6 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback December 16, 2013 IRFH7932PbF VGS(th) Gate threshold Voltage (V) 30 ID , Drain Current (A) 25 20 15 10 5 2.0 ID = 100μA 1.6 1.2 0.8 0 25 50 75 100 125 -75 150 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) T J , Ambient Temperature (°C) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10. Threshold Voltage Vs. Temperature 100 Thermal Response ( Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 τJ 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 Ri (°C/W) R4 R4 τC τ τ2 τ1 τ3 τ2 τ3 Ci= τi/Ri Ci i/Ri τ4 τ4 τi (sec) 0.54874 0.000128 2.05644 0.023270 7.36536 1.0678 6.44303 38.4 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 16 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance ( mΩ) IRFH7932PbF ID = 25A 14 12 10 8 T J = 125°C 6 4 2 T J = 25°C 0 70 ID 5.86A 6.91A BOTTOM 20.0A 60 TOP 50 40 30 20 10 0 2 3 4 5 6 7 8 9 10 25 VGS, Gate-to-Source Voltage (V) 50 75 V DS V GS + V - DD IAS 20V RD D.U.T. RG DRIVER D.U.T RG 150 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V VDS 125 Starting T J , Junction Temperature (°C) Fig 12. On-Resistance vs. Gate Voltage L 100 + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 A 0.01Ω tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS td(on) I AS Fig 14b. Unclamped Inductive Waveforms 6 www.irf.com © 2013 International Rectifier tr td(off) tf Fig 15b. Switching Time Waveforms Submit Datasheet Feedback December 16, 2013 IRFH7932PbF D.U.T Driver Gate Drive P.W. + - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2μF .3μF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit 7 www.irf.com © 2013 International Rectifier Fig 18. Gate Charge Waveform Submit Datasheet Feedback December 16, 2013 IRFH7932PbF PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE XXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PART NUMBER XYWWX XXXXX MARKING CODE (Per Marking Spec.) PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 IRFH7932PbF PQFN Tape and Reel NOT ES: (I) M ea sured from th e centerlin e o f the sproc ket h ole to the ce nterline of the poc ket (II) C um u lative tolera nce of 10 sp roc ket holes is + /- 0.2 0 (III) M ea sured from th e centerlin e o f the sproc ket h ole to the ce nterline of the poc ket (IV ) O ther ma te rial a vailable (V ) Fo rm ing forma t: Flatbed (V I) E s tim ated m ax im u m leng th = 9 3 me ters / 22 B 3 reel † Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant Consumer †† (per JEDEC JESD47F††† guidelines) MSL1 SO-8 (per JEDEC J-STD-020D†††) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.078mH, RG = 25Ω, IAS = 20A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Revision History Date 12/16/2013 Comments • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) • Updated data sheet with new IR corporate template IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013