Preliminary Technical Information IXTY2N65X2 IXTP2N65X2 X2-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 2A 2.3 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 2 A IDM TC = 25C, Pulse Width Limited by TJM 4 A IA TC = 25C 1 A EAS TC = 25C 100 mJ dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns PD TC = 25C 55 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 0.35 3.00 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-220 D (Tab) TO-220 (IXTP) GD S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Low QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2015 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings V Applications V 100 nA 5.0 5 A 100 A 2.3 Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100654A(6/15) IXTY2N65X2 IXTP2N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 1.1 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss TO-252 AA Outline 1.8 S 14 180 pF 129 pF 0.7 pF 22 45 pF pF 15 ns 19 ns 20 ns 14 ns 4.3 nC 0.8 nC 2.1 nC Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 50 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 2.27 C/W RthJC RthCS 1 - Gate 2,4 - Drain 3 - Source TO-220 C/W 0.50 TO-220 Outline Source-Drain Diode E Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max A oP A1 H1 Q D2 D IS VGS = 0V 2 A ISM Repetitive, pulse Width Limited by TJM 8 A VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 1A, -di/dt = 100A/μs D1 E1 A2 EJECTOR PIN 1.4 137 508 7.4 VR = 100V L1 L V ns nC A e 3X b c e1 3X b2 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY2N65X2 IXTP2N65X2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 2.0 4.0 VGS = 10V 8V 7V VGS = 10V 8V 3.5 1.5 3.0 7V I D - Amperes I D - Amperes 6V 1.0 5.5V 0.5 2.5 6V 2.0 1.5 1.0 5.5V 0.5 5V 5V 0.0 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 4 8 12 VDS - Volts 20 24 28 32 Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 4.5 2.0 VGS = 10V 7V VGS = 10V 4.0 3.5 1.5 RDS(on) - Normalized 6V I D - Amperes 16 VDS - Volts 1.0 5V 0.5 3.0 I D = 2A 2.5 2.0 I D = 1A 1.5 1.0 0.5 4V 0.0 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 -50 13 25 50 75 100 Fig. 5. RDS(on) Normalized to ID = 1A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 2.2 2.0 VGS = 10V 1.8 TJ = 125ºC 3.5 1.6 3.0 1.4 I D - Amperes R DS(on) - Normalized 0 TJ - Degrees Centigrade 4.5 4.0 -25 VDS - Volts 2.5 TJ = 25ºC 2.0 1.2 1.0 0.8 0.6 1.5 0.4 1.0 0.2 0.0 0.5 0.0 0.5 1.0 1.5 2.0 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 2.5 3.0 3.5 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY2N65X2 IXTP2N65X2 Fig. 7. Input Admittance Fig. 8. Transconductance 2.8 3.0 TJ = - 40ºC 2.4 2.5 g f s - Siemens I D - Amperes 2.0 1.6 TJ = 125ºC 25ºC - 40ºC 1.2 25ºC 2.0 1.5 125ºC 1.0 0.8 0.5 0.4 0.0 0.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 6.5 0.4 0.8 1.2 VGS - Volts 1.6 2.0 2.4 2.8 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 6 VDS = 325V 5 I D = 1A 8 I G = 1mA VGS - Volts I S - Amperes 4 3 TJ = 125ºC 6 4 2 TJ = 25ºC 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 0.5 1 1.5 Fig. 11. Capacitance 2.5 3 3.5 4 4.5 Fig. 12. Output Capacitance Stored Energy 1,000 5.0 4.5 Ciss 4.0 100 E OSS - MicroJoules Capacitance - PicoFarads 2 QG - NanoCoulombs VSD - Volts Coss 10 Crss 1 3.5 3.0 2.5 2.0 1.5 1.0 f = 1 MHz 0.5 0 0.0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 VDS - Volts 400 500 600 IXTY2N65X2 IXTP2N65X2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Maximum Transient Thermal Impedance 10 10 RDS(on) Limit I D - Amperes 1 100µs 0.1 Z (th)JC - ºC / W 25µs 1 0.1 TJ = 150ºC TC = 25ºC Single Pulse DC 1ms 10ms 0.01 10 100 VDS - Volts © 2015 IXYS CORPORATION, All Rights Reserved 1,000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS REF: T_2N65X2(Z1-R25T50) 6-05-15-A