CYSTEKEC MTE05N08F7T N-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C918F7T
Issued Date : 2017.01.03
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE05N08F7T
BVDSS
ID @VGS=10V, TC=25°C
80V
RDSON(TYP) @ VGS=10V, ID=20A
Features
172A
2.7mΩ
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
Symbol
Outline
MTE05N08F7T
TO-263-7L-4C
G:Gate D:Drain S:Source
Ordering Information
Device
MTE05N08F7T-0-T7-X
Package
Shipping
TO-263-7L-4C
800 pcs / Tape & Reel
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE05N08F7T
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C918F7T
Issued Date : 2017.01.03
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C(silicon limit)
Continuous Drain Current @ TC=100°C(silicon limit)
Continuous Drain Current @ TC=25°C(package limit) (Note 1)
Pulsed Drain Current
(Note 3)
Continuous Drain Current @ TA=25°C
(Note 2)
Continuous Drain Current @ TA=70°C
(Note 2)
Avalanche Current @L=0.1mH
(Note 3)
Avalanche Energy @ L=1mH, ID=60A, VDD=50V
(Note 4)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C
(Note 1)
TA=25°C
(Note 2)
Power Dissipation
TA=70°C
(Note 2)
Operating Junction and Storage Temperature
VDS
VGS
80
±30
202
143
172
688
16.5
13.2
80
1800
330
165
2
1.3
-55~+175
ID
IDM
IDSM
IAS
EAS
PD
PDSM
Tj, Tstg
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max,
(Note 2)
Symbol
RθJC
RθJA
Value
0.45
62.5
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. 100% tested by conditions of L=1mH, IAS=20A, VGS=15V, VDD=50V.
5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTE05N08F7T
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C918F7T
Issued Date : 2017.01.03
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
Min.
Typ.
Max.
80
2.0
-
42.8
2.7
4.0
±100
1
25
3.8
123.8
21
44.8
41
35.6
90
23.2
5776
638
213
1.6
-
0.66
44.2
63.3
172
688
1
-
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
Unit
Test Conditions
mΩ
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=20A
VGS=±30V
VDS =64V, VGS =0V
VDS =64V, VGS =0V, Tj=125°C
VGS =10V, ID=20A
nC
ID=20A, VDS=40V, VGS=10V
ns
VDS=40V, ID=20A, VGS=10V, RG=1Ω
pF
VGS=0V, VDS=40V, f=1MHz
Ω
f=1MHz
V
S
nA
μA
A
V
ns
nC
IS=1A, VGS=0V
IF=1A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTE05N08F7T
CYStek Product Specification
Spec. No. : C918F7T
Issued Date : 2017.01.03
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
ID, Drain Current(A)
250
BVDSS, Normalized Drain-Source
Breakdown Voltage
300
6V
200
10V,9V,8V,7V
150
100
5V
50
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
VGS=4V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
100
VGS=6V
VGS=7V
VGS=10V
10
1
Tj=25°C
0.8
0.6
0.4
Tj=150°C
0.2
1
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
50
2.4
2
ID=20A
40
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
30
20
10
0
0
MTE05N08F7T
2
4
6
8
VGS, Gate-Source Voltage(V)
10
VGS=10V, ID=20A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 2.7mΩ
0
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C918F7T
Issued Date : 2017.01.03
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
C oss
1000
Crss
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
100
0
10
20
30
VDS, Drain-Source Voltage(V)
-75 -50 -25
40
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
8
VDS=40V
6
VDS=64V
4
2
ID=20A
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
ID, Maximum Drain Current(A)
ID, Drain Current(A)
1ms
10ms
10
100ms
DC
TC=25°C, Tj=175°C,
VGS=10V,RθJC=0.45°C/W
single pulse
1
120
140
Silicon limit
100μs
100
40
60
80
100
Total Gate Charge---Qg(nC)
240
10 μs
RDS(ON)
Limited
20
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
1000
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
200
160
120
Package limit
80
40
VGS=10V, RθJC=0.45°C/W
0
0.1
0.1
MTE05N08F7T
1
10
100
VDS, Drain-Source Voltage(V)
1000
0
25
50
75 100 125 150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
Spec. No. : C918F7T
Issued Date : 2017.01.03
Revised Date :
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
5000
300
4500
VDS=10V
Peak Transient Power (W)
ID, Drain Current (A)
250
200
150
100
TJ(MAX) =175°C
TC=25°C
RθJC=0.45°C/W
4000
3500
3000
2500
2000
1500
1000
50
500
0
0
2
4
6
VGS, Gate-Source Voltage(V)
8
10
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.RθJC (t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=0.45 °C/W
0.05
0.02
0.01
0.01
0.001
1.E-05
MTE05N08F7T
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C918F7T
Issued Date : 2017.01.03
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTE05N08F7T
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C918F7T
Issued Date : 2017.01.03
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE05N08F7T
CYStek Product Specification
Spec. No. : C918F7T
Issued Date : 2017.01.03
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
TO-263-7L-4C Dimension
Marking :
Device Name
Date Code
CYS
E05N08
□□□□
Style : Pin 1. Gate
Pin 2, 3, 5, 6, 7 : Source
Pin 4. Drain
7-Lead Plastic Surface Mounted TO-263-7L Package
CYStek Package Code : F7T
Date Code : (From left to right)
First Code : Year code, the last digit of Christinr year. For example, 2014→4, 2015→, 2016→6, …, etc.
Second Code : Month code, Jan→A, Feb→B, Mar→C, Apr→D, May→E, Jun→F, Jul→G, Aug→H, Sep→J,
Oct→K, Nov→L, Dec→M
Third and fourth codes : production serial number, 01~99
*:Typical
Inches
Min.
Max.
0.1673
0.1791
0.0472
0.0551
0.0886
0.1004
0.0004
0.0098
0.0197
0.0276
0.0228
0.0331
0.0157
0.0236
0.3563
0.3720
0.2717
-
DIM
A
A1
A2
A3
b
b1
c
D
D4
Millimeters
Min.
Max.
4.25
4.55
1.20
1.40
2.25
2.55
0.01
0.25
0.50
0.70
0.58
0.84
0.40
0.60
9.05
9.45
6.90
-
DIM
E
e
E5
H
H2
L
L1
L4
θ
Inches
Min.
Max.
0.3858
0.4016
0.0500 BSC
0.2854
0.5768
0.6043
0.0315
0.0472
0.0945
0.1181
0.0335
0.0453
0.0098 BSC
2°
8°
Millimeters
Min.
Max.
9.80
10.20
1.27 BSC
7.25
14.65
15.35
0.80
1.20
2.40
3.00
0.85
1.15
0.25 BSC
2°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE05N08F7T
CYStek Product Specification
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