DMN62D0LFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION V(BR)DSS Features and Benefits RDS(ON) ID TA = 25°C 2Ω @ VGS = 4V 100mA 2.5Ω @ VGS = 2.5V 50mA • • • • • • • • 60V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data • • • • • • • • DC-DC Converters Power management functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Case: X1-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) • Drain X1-DFN1006-3 Gate S D G ESD PROTECTED Bottom View Top View Pin-Out Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 3) Product DMN62D0LFB-7 DMN62D0LFB-7B Notes: Marking NK NK Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information DMN62D0LFB-7 DMN62D0LFB-7B NK NK Top View Dot Denotes Drain Side Top View Bar Denotes Gate and Source Side DMN62D0LFB Document number: DS35409 Rev. 2 - 2 NK = Product Type Marking Code 1 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN62D0LFB Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 4.0V Unit V V IDM Value 60 ±20 100 75 200 Symbol PD RθJA TJ, TSTG Max 0.47 258 -55 to +150 Unit W °C/W °C TA = 25°C TA = 70°C Steady State ID Pulsed Drain Current (Note 5) mA mA Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Operating and Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise stated Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS 60 - - 1.0 ±100 ±500 ±2.0 V μA nA nA μA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±5V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±15V, VDS = 0V 1.3 1.5 1.9 2.6 0.8 0.9 1.0 2 2.5 3 1.3 V |Yfs| VSD 0.6 - VDS = VGS, ID = 250μA VGS = 4V, ID = 100mA VGS = 2.5V, ID = 50mA VGS = 1.8V, ID = 50mA VGS = 1.5V, ID = 10mA VDS = 10V, ID = 200mA VGS = 0V, IS = 115mA Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 32 4.4 2.9 126 0.45 0.08 0.08 3.4 3.4 26.4 16.3 - IGSS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω S V Test Condition pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VGS = 4.5V, VDS = 10V, ID = 250mA ns ns ns ns VGS = 10V, VDS = 30V, RL = 150Ω, RG = 25Ω, ID = 200mA 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 5. Repetitive rating, pulse width limited by junction temperature. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMN62D0LFB Document number: DS35409 Rev. 2 - 2 2 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN62D0LFB 0.6 1 ID(A) @ VGS=2.5V 0.5 ID, DRAIN CURRENT (A) ID(A) @ VGS=4.0V ID(A) @ VGS=3.0V 0.3 ID(A) @ VGS=4.5V 0.2 ID(A) @ VGS=1.5V 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 5 RDS(ON)(Ω ) Ave @ VG=1.8V 2.5 2 RDS(ON)(Ω) Ave @ VG=2.5V 1.5 RDS(ON)(Ω ) Ave @ VG=4.5V 1 0.5 0 0 0.1 0.2 0.3 ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.4 0.01 0.5 1 1.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 2 10 VGS = 5.0V Ave RDS(ON)(Ω ) @ 125° C Ave RDS(ON)(Ω) @ 150°C Ave RDS(ON)(Ω ) @ 85° C 1 Ave RDS(ON)(Ω ) @ 25° C Ave RDS(ON)(Ω ) @ -55° C 0.1 0 0.1 0.2 0.3 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.4 1.6 3 VTH, GATE THRESHOLD VOLTAGE (V) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 3 0.1 0.001 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) ID, DRAIN CURRENT (A) ID(A) @ VGS=1.8V 0.4 0.1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ADVANCE INFORMATION ID(A) @ VGS=2.0V 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN62D0LFB Document number: DS35409 Rev. 2 - 2 1.4 1.2 1 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature 3 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN62D0LFB 1 60 CT, JUNCTION CAPACITANCE (pF) 55 IS (A) 0.01 45 40 35 30 25 20 15 10 5 0.001 0.1 0.3 0.5 0.7 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diodes Forward Voltage vs. Current 0 1.1 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Junction Capacitance 20 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 SOA, Safe Operation Area 100 1 10 VDS =10V, ID=250mA ID, DRAIN CURRENT (A) 8 VGS (V) 6 4 0.1 0.01 2 0 0 0.2 0.6 0.8 1 QG (nC) Fig. 9 Gate Charge Characteristics 0.4 0.001 0.1 1.2 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCE INFORMATION 0.1 50 r(t) @ D=0.5 r(t) @ D=0.9 r(t) @ D=0.3 0.1 r(t) @ D=0.7 r(t) @ D=0.1 r(t) @ D=0.05 r(t) @ D=0.02 0.01 r(t) @ D=0.01 RθJA(t)=r(t) * RθJA r(t) @ D=0.005 RθJA=273°C/W Duty Cycle, D=t1 / t2 r(t) @ D=Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Fig. 11 Transient Thermal Resistance DMN62D0LFB Document number: DS35409 Rev. 2 - 2 4 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN62D0LFB NEW PRODUCT ADVANCE INFORMATION Package Outline Dimensions A X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout C X1 X G2 G1 Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Y Z DMN62D0LFB Document number: DS35409 Rev. 2 - 2 5 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN62D0LFB IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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