BSC0910NDI Dual N-Channel OptiMOS™ MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 25 25 V VGS=10 V 4.6 1.2 mW VGS=4.5 V 5.9 1.6 40 40 VDS • Optimized for high performance Buck converter RDS(on),max • Logic level (4.5V rated) • 100% avalanche tested ID A 1) • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant VPhase • Halogen-free according to IEC61249-2-21 • Integrated monolithic Schottky-like diode Type Package BSC0910NDI Marking 0910NDI PG-TISON-8 Maximum ratings, at T j=25 °C, unless otherwise specified 2) Parameter Value Symbol Conditions Unit Q1 Q2 T C=70 °C, V GS=10 V 40 40 T A=25 °C, V GS=4.5 V3) 16 31 V GS=4.5 V3) 13 25 T A=25 °C, V GS=10 V4) 11 22 I D,pulse T C=70 °C 160 160 Avalanche energy, single pulse E AS Q1: I D=20 A, Q2: I D=20 A, R GS=25 W 12 80 Gate source voltage V GS Power dissipation P tot Continuous drain current ID T A=70 °C, Pulsed drain current5) ±20 T A=25 °C2) T A=25 °C, minimum footprint4) Operating and storage temperature T j, T stg 2.5 1.0 1.0 W °C 55/150/56 IEC climatic category; DIN IEC 68-1 Rev.2.0 mJ V 2.5 -55 ... 150 A page 1 2013-11-27 BSC0910NDI Parameter Values Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction case Q1 R thJC - - 4.5 Q2 - - 1.5 Thermal resistance, junction ambient1) Q1 R thJA 6 cm2 cooling area3) - - 50 minimal footprint, steady state4) - - 125 25 - - V - 15 - mV/K V DS=V GS, I D=250 µA 1 - 2 V V DS=20 V, V GS=0 V, T j=25 °C - - 1 µA - - 500 V DS=20 V, V GS=0 V, T j=150 °C - - 0.1 - 3 - V GS=20 V, V DS=0 V - - 100 nA - 4.7 5.9 mW - 1.25 1.6 - 3.5 4.6 - 0.9 1.2 Q1 R G 0.4 0.8 1.6 Q2 0.4 0.7 1.4 42 84 - 85 170 - K/W Q2 Q1 Q2 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Q1 V (BR)DSS V GS=0 V, I D=10 mA Q2 Breakdown voltage temperature coefficient Q1 dV (BR)DSS I D=10 mA, referenced to 25 °C Q2 /dT j Gate threshold voltage Q1 V GS(th) Q2 Zero gate voltage drain current Q1 I DSS Q2 Q1 Q2 Gate-source leakage current Q1 I GSS mA Q2 Drain-source on-state resistance Q1 R DS(on) V GS=4.5 V, I D=25 A Q2 Q1 V GS=10 V, I D=25 A Q2 Gate resistance Transconductance Q1 g fs Q2 Rev.2.0 |V DS|>2|I D|R DS(on)max, I D=30 A page 2 W S 2013-11-27 BSC0910NDI Parameter Values Symbol Conditions Unit min. typ. max. Q1 C iss - 760 1000 Q2 - 3400 4500 - 370 500 - 1700 2300 Q1 Crss - 35 - Q2 - 150 - Q1 t d(on) - 2.4 - Q2 - 5.6 - - 3.6 - - 5.6 - - 13 - Q2 - 28 - Q1 t f - 2.4 - Q2 - 4.1 - Q1 Q gs - 1.9 2.5 Gate to drain charge Q gd - 1.2 1.8 Switching charge Qg - 5.0 6.6 Gate plateau voltage V plateau - 2.5 - - 8.1 10.8 - 5.6 8.4 23 30.6 - 2.4 - - 8 10.6 - 36 48 Dynamic characteristics Input capacitance Output capacitance Q1 C oss Q2 Reverse transfer capacitance Turn-on delay time Rise time Q1 t r Q2 Turn-off delay time Fall time Q1 t d(off) V GS=0 V, V DS= 12 V, f =1 MHz V DD=12 V, V GS=10 V, R G=1.6 W, I D=30 A pF ns Gate Charge Characteristics Gate to source charge Gate to source charge Q2 Q gs Gate to drain charge Q gd Switching charge Qg Gate plateau voltage V plateau Output charge Q1 Q oss V DD=12 V, I D=30 A, V GS=0 to 4.5 V V nC V nC V DD=12 V, V GS=0 V Q2 Rev.2.0 nC page 3 2013-11-27 BSC0910NDI Parameter Values Symbol Conditions Unit min. typ. max. - - 28 - - 40 Q1 I S,pulse - - 160 Q2 - - 160 Reverse Diode Diode continuous forward current Q1 I S Q2 A T C=25 °C Diode pulse current Diode forward voltage Reverse recovery charge Q1 V SD V GS=0 V, I F=20 A, T j=25 °C - 0.87 1 Q2 V GS=0 V, I F=10 A, T j=25 °C - 0.56 0.7 - 5 - nC - 5 - nC Q1 Q rr Q2 V R=12 V, I F=10 A, di F/dt =400 A/µs V 1) J-STD20 and JESD22 2) One transistor active 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active. 4) 5) See figure 3 for more detailed information. Rev.2.0 page 4 2013-11-27 BSC0910NDI 1 Power dissipation (Q1) P tot=f(T A)3) 1.2 1.2 1 1 0.8 0.8 Ptot [W] Ptot [W] P tot=f(T A) 2 Power dissipation (Q2) 3) 0.6 0.6 0.4 0.4 0.2 0.2 0 0 0 40 80 120 0 160 40 TA [°C] 80 120 160 120 160 TA [°C] 3 Drain current (Q1) 4 Drain current (Q2) I D=f(T C) I D=f(T C) parameter: V GS≥10 V parameter: V GS≥10 V 40 40 30 30 ID [A] 50 ID [A] 50 20 20 10 10 0 0 0 40 80 120 160 TC [°C] Rev.2.0 0 40 80 TC [°C] page 5 2013-11-27 BSC0910NDI 5 Safe operating area (Q1) 6 Safe operating area (Q2) I D=f(V DS); T C=25 °C; D =0 I D=f(V DS); T C=25 °C; D =0 parameter: t p parameter: t p 103 103 1 µs 1 µs 102 10 µs 102 10 µs 100 µs 100 µs 1 ms 101 ID [A] ID [A] 10 ms 1 ms 10 ms 101 DC DC 100 100 10-1 10-1 10-1 100 101 102 10-1 100 VDS [V] 101 102 VDS [V] 7 Max. transient thermal impedance (Q1) 8 Max. transient thermal impedance (Q2) Z thJC=f(t p) Z thJC=f(t p) parameter: D =t p/T parameter: D =t p/T 101 101 0.5 100 100 ZthJC [K/W] ZthJC [K/W] 0.5 0.2 0.1 0.05 0.2 0.1 0.05 0.02 10-1 0.02 0.01 0.01 single pulse single pulse 10-1 10-2 10-5 10-4 10-3 10-2 10-1 100 tp [s] Rev.2.0 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 6 2013-11-27 BSC0910NDI 9 Typ. output characteristics (Q1) 10 Typ. output characteristics (Q2) I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: V GS parameter: V GS 160 400 4V 10 V 4.5 V 10 V 3.5 V 3.5 V 4.5 V 4V 3.3 V 120 300 3V 80 ID [A] ID [A] 3.2 V 200 3V 2.8 V 2.8 V 40 100 0 0 0 1 2 3 0 1 VDS [V] 2 3 VDS [V] 11 Typ. drain-source on resistance (Q1) 12 Typ. drain-source on resistance (Q2) R DS(on)=f(I D); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 8 3 7 2.5 3.3 V 3.5 V 6 3V 2 4V 4.5 V RDS(on) [mW] RDS(on) [mW] 5 5V 4 10 V 3.3 V 3.5 V 1.5 4V 4.5 V 5V 3 1 10 V 2 0.5 1 0 0 0 20 40 60 ID [A] Rev.2.0 0 20 40 60 80 ID [A] page 7 2013-11-27 BSC0910NDI I D=f(V GS); |V DS |>2 | I D| R DS(on)max I D=f(V GS); |V DS |>2 | I D| R DS(on)max parameter: T j parameter: T j 160 160 120 120 ID [A] 14 Typ. transfer characteristics (Q2) ID [A] 13 Typ. transfer characteristics (Q1) 80 40 40 25 °C 150 °C 80 150 °C 25 °C 0 0 0 1 2 3 4 0 1 2 VGS [V] 3 4 VGS [V] 15 Drain-source on-state resistance (Q1) 16 Drain-source on-state resistance (Q2) R DS(on)=f(T j); I D=25 A; V GS=10 V R DS(on)=f(T j); I D=25 A; V GS=10 V 8 2.5 7 2 5 4 RDS(on) [mW] RDS(on) [mW] 6 typ 3 1.5 1 typ 2 0.5 1 0 0 -60 -20 20 60 100 140 180 Tj [°C] Rev.2.0 -60 -20 20 60 100 140 180 Tj [°C] page 8 2013-11-27 BSC0910NDI 18 Typ. gate threshold voltage (Q2) V GS(th)=f(T j); V GS=V DS; I D=250 µA V GS(th)=f(T j); V GS=V DS; I D=10 mA 2.8 2.8 2.4 2.4 2 2 1.6 1.6 VGS(th) [V] VGS(th) [V] 17 Typ. gate threshold voltage (Q1) 1.2 1.2 0.8 0.8 0.4 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 Tj [°C] 100 140 180 Tj [°C] 19 Typ. capacitances (Q1) 20 Typ. capacitances (Q2) C =f(V DS); V GS=0 V; f =1 MHz C =f(V DS); V GS=0 V; f =1 MHz 104 104 Ciss Coss 103 103 C [pF] C [pF] Ciss Coss Crss 102 102 Crss 101 101 0 5 10 15 20 25 VDS [V] Rev.2.0 0 5 10 15 20 25 VDS [V] page 9 2013-11-27 BSC0910NDI 21 Forward characteristics of reverse diode (Q1) 22 Forward characteristics of reverse diode (Q2) I F=f(V SD) I F=f(V SD) parameter: T j parameter: T j 103 103 100 °C 102 150 °C 102 25 °C -55 °C 25 °C IF [A] IF [A] 150 °C 101 100 101 100 10-1 10-1 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 VSD [V] 0.6 0.8 1 VSD [V] 23 Avalanche characteristics (Q1) 24 Avalanche characteristics (Q2) I AS=f(t AV); R GS=25 W I AS=f(t AV); R GS=25 W parameter: T j(start) parameter: T j(start) 102 102 25 °C IAV [A] IAV [A] 25 °C 101 100 °C 125 °C 100 °C 101 125 °C 100 100 100 101 102 103 tAV [µs] Rev.2.0 100 101 102 103 tAV [µs] page 10 2013-11-27 BSC0910NDI 25 Typ. gate charge (Q1) 26 Typ. gate charge (Q2) V GS=f(Q gate); I D=20 A pulsed V GS=f(Q gate); I D=20 A pulsed parameter: V DD parameter: V DD 10 10 8 8 12 V 12 V 5V 20 V 5V 20 V VGS [V] 6 VGS [V] 6 4 4 2 2 0 0 0 2 4 6 8 10 12 0 10 20 Qgate [nC] 30 40 50 Qgate [nC] 27 Drain-source breakdown voltage (Q1) 28 Typ. drain-source leakage current (Q2) V BR(DSS)=f(T j); I D=1 mA I DSS=f(V DS ); V GS=0 V parameter: T j 30 10-2 29 28 10-3 125 °C 26 IDSS [A] VBR(DSS) [V] 27 25 100 °C 10-4 75 °C 24 23 10-5 22 21 25 °C 10-6 20 -60 -20 20 60 100 140 180 5 10 15 20 VDSj [V] Tj [°C] Rev.2.0 0 page 11 2013-11-27 BSC0910NDI PG-TISON Rev.2.0 page 12 2013-11-27 BSC0910NDI PG-TISON-8 Rev.2.0 page 13 2013-11-27 BSC0910NDI Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.0 page 14 2013-11-27