Fairchild FQB4N90TM N-channel qfet mosfet Datasheet

FQB4N90 / FQI4N90
N-Channel QFET MOSFET
900 V, 4.2 A, 3.3 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
• 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max) @VGS = 10 V,
ID = 2.1 A
• Low Gate Charge (Typ. 24 nC)
• Low Crss (Typ. 9.5 pF)
• 100% Avalanche Tested
D
D
!
"
! "
"
"
G!
G
S
D2-PAK
G D S
FQB Series
Absolute Maximum Ratings
Symbol
VDSS
ID
I2-PAK
!
FQI Series
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQB4N90 / FQI4N90
900
Units
V
4.2
A
- Continuous (TC = 100°C)
2.65
A
16.8
A
IDM
Drain Current
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
570
mJ
IAR
Avalanche Current
(Note 1)
4.2
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
14
4.0
3.13
mJ
V
W
140
1.12
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
TJ, Tstg
TL
- Pulsed
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
0.89
Units
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
FQB4N90 / FQI4N90 Rev. C0
www.fairchildsemi.com
FQB4N90 / FQI4N90 N-Channel MOSFET
March 2013
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
900
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.9
IDSS
IGSSF
IGSSR
VDS = 900 V, VGS = 0 V
--
--
10
µA
VDS = 720 V, TC = 125°C
--
--
100
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
--
2.7
3.3
Ω
--
3.5
--
S
--
860
1100
pF
--
90
120
pF
--
9.5
12.5
pF
--
25
60
ns
--
70
150
ns
--
45
100
ns
--
40
90
ns
--
24
30
nC
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.1 A
gFS
Forward Transconductance
VDS = 50 V, ID = 2.1 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 450 V, ID = 4.2 A,
RG = 25 Ω
(Note 4, 5)
VDS = 720 V, ID = 4.2 A,
VGS = 10 V
(Note 4, 5)
--
5.8
--
nC
--
11.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
4.2
A
ISM
--
--
16.8
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 4.2 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
440
--
ns
Qrr
Reverse Recovery Charge
--
3.3
--
µC
VGS = 0 V, IS = 4.2 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 61mH, IAS = 4.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2010 Fairchild Semiconductor Corporation
FQB4N90 / FQI4N90 Rev. C0
www.fairchildsemi.com
FQB4N90 / FQI4N90 N-Channel MOSFET
Electrical Characteristics
ID, Drain Current [A]
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
1
10
ID , Drain Current [A]
1
10
0
10
150℃
0
10
25℃
-55℃
-1
10
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
1
8
IDR , Reverse Drain Current [A]
RDS(on) [ Ω ],
Drain-Source On-Resistance
10
VGS = 10V
VGS = 20V
6
4
2
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
0
-1
0
3
6
12
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
1500
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 180V
10
Ciss
VDS = 450V
900
Coss
600
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
300
VGS, Gate-Source Voltage [V]
1200
Capacitance [pF]
9
VDS = 720V
8
6
4
2
※ Note : ID = 4.2 A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2010 Fairchild Semiconductor Corporation
FQB4N90 / FQI4N90 Rev. C0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
FQB4N90 / FQI4N90 N-Channel MOSFET
Typical Characteristics
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 2.1 A
0.5
150
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2
5
10
Operation in This Area
is Limited by R DS(on)
4
1
100 µs
1 ms
ID, Drain Current [A]
ID, Drain Current [A]
10
10 ms
DC
0
10
-1
10
※ Notes :
3
2
1
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
1
10
2
10
0
25
3
10
10
50
100
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
※ N o te s :
1 . Z θ J C ( t) = 0 .8 9 ℃ / W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
10
-1
0 .1
0 .0 5
PDM
0 .0 2
JC
( t) , T h e r m a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
10
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
0 .0 1
t1
Z
θ
s i n g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FQB4N90 / FQI4N90 Rev. C0
www.fairchildsemi.com
FQB4N90 / FQI4N90 N-Channel MOSFET
Typical Characteristics
FQB4N90 / FQI4N90 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
12V
Qg
10V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
ID (t)
10V
DUT
VDS (t)
VDD
tp
©2010 Fairchild Semiconductor Corporation
FQB4N90 / FQI4N90 Rev. C0
Time
www.fairchildsemi.com
FQB4N90 / FQI4N90 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
©2010 Fairchild Semiconductor Corporation
FQB4N90 / FQI4N90 Rev. C0
www.fairchildsemi.com
FQB4N90 / FQI4N90 N-Channel MOSFET
Mechanical Dimensions
D2 - PAK
Dimensions in Millimeters
©2010 Fairchild Semiconductor Corporation
FQB4N90 / FQI4N90 Rev. C0
www.fairchildsemi.com
FQB4N90 / FQI4N90 N-Channel MOSFET
Mechanical Dimensions
I2 - PAK
Dimensions in Millimeters
©2010 Fairchild Semiconductor Corporation
FQB4N90 / FQI4N90 Rev. C0
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2010 Fairchild Semiconductor Corporation
FQB4N90 / FQI4N90 Rev. C0
www.fairchildsemi.com
FQB4N90 / FQI4N90 N-Channel MOSFET
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