CGHV14800 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically deliverying >65% drain efficiency. The package options are ceramic/metal flange package. Package Type : 440117 PN: CGHV148 00F Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 900 900 870 870 920 W Power Gain 14.5 14.5 14.0 14.0 14.0 dB 68 67 67 63 62 % Drain Efficiency Note: Measured in the CGHV14800-AMP amplifier circuit, under 3 μs pulse width, 3% duty cycle, PIN = 45 dBm. ary 2016 - Prelimin Rev 0.2 – June Features • Reference design amplifier 1.2 - 1.4 GHz Operation • 800 W Minimum Output Power • 14 dB Power Gain • 69% Typical Drain Efficiency • <0.3 dB Pulsed Amplitude Droop • Internally input and output matched Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 125 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 132 mA 25˚C Maximum DC Current IDCMAX 24 A 25˚C TS 245 ˚C τ 40 in-oz RθJC 0.44 ˚C/W PDISS = 398 W, 50˚C RθJC 0.10 ˚C/W PDISS = 664 W, 3 µsec, 3%, 85˚C TC -40, +100 ˚C PDISS = 664 W, 100 µsec, 10% 1 Soldering Temperature 2 Screw Torque CW Thermal Resistance, Junction to Case3 Pulsed Thermal Resistance, Junction to Case 3 Case Operating Temperature 4 Note: Current limit for long term, reliable operation Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV14800F 4 See also, the Power Dissipation De-rating Curve on Page x 1 2 Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 83.6 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 500 mA Saturated Drain Current IDS 80.3 123.5 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 83.6 mA DC Characteristics (TC = 25˚C) 1 2 RF Characteristics3 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted) Output Power POUT – 900 – W VDD = 50 V, IDQ = 800 mA, PIN = 45 dBm Drain Efficiency DE – 68 – % VDD = 50 V, IDQ = 800 mA, PIN = 45 dBm Power Gain GP – 14.5 – dB VDD = 50 V, IDQ = 800 mA, PIN = 45 dBm Pulsed Amplitude Droop D – -0.3 – dB VDD = 50 V, IDQ = 800 mA Output Mismatch Stress VSWR – 5:1 – Y No damage at all phase angles, VDD = 50 V, IDQ = 800 mA, PIN = 45 dBm Pulsed Input Capacitance CGS – 326 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 643 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 3.9 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV14800-AMP. Pulse Width = 3 μS, Duty Cycle = 3%. Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV14800 Rev 0.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Pulsed Performance Figure 1. - Saturated Output Power and Drain Efficiency vs Frequency of the CGHV14800F in the CGHV14800F-AMP CGHV14800F Typical Part Performance VDD = 50 V, IDQ = 800 mA, Pulse Width = 3 μS, Duty Cycle = 3% 60.5 90 Output Power 80 59.5 70 ƞ 59.0 60 Psat Pout, Pin=44dBm 58.5 Drain Efficiency (%) Output Power (dBm) 60.0 50 DEFF at Psat Deff, Pin = 44dBm 58.0 1.0 1.1 1.2 1.3 1.4 1.5 1.6 40 Frequency (GHz) Figure 2. - Small Signal Gain and Return Losses vs Frequency of the CGHV14800F in the CGHV14800F-AMP 50 V,Signal IDQ =Gain 800and mA, Pulse Width = 100 μS, Cycle = 5% VDD =Small Return Losses vs Frequency forDuty the CGHV14800 5 16 0 12 -5 8 -10 S21 S11, S22 20 S21 4 -15 S11 S22 0 1.0 1.1 1.2 1.3 Frequency 1.4 1.5 Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV14800 Rev 0.2 1.6 -20 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV14800F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 5.1,OHM, +/- 1%, 0.25W, 1206 1 R2 RES,1/16W,0603,1%,4.99K OHMS 1 R3 RES 536OHM +/- 1%, 0.25W,1206 1 L1 INDUCTOR,CHIP,6.8nH,0603 SMT 1 C1, C14, C15 CAP, 100 PF +/- 5%,, 250V, 0805, ATC 600F 3 C16 CAP, 2.0pF, +/-0.1pF, 0603, ATC 1 C2 CAP, 33pF, +/-5%, 0603, ATC 1 C3, C8 CAP, 470PF, 5%, 100V, 0603, X7R 2 C4, C9 CAP,33000PF, 0805,100V, X7R 2 C5, C10 CAP, 1.0UF, 100V, 10%, X7R, 1210 2 C6 CAP 10UF 16V TANTALUM 1 C7 CAP, 33 PF +/- 5%,, 250V, 0805, ATC 600F 1 C11 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1 C14 CAP 10uF 16V TANTALUM 1 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2 1 PCB, TMM10i, 0.025” THK, CGHV14800 1.2-1.4GHZ 1 2-56 SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 CGHV14800F 1 J1,J2 Q1 CGHV14800F-AMP Demonstration Amplifier Circuit Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV14800 Rev 0.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV14800-AMP Demonstration Amplifier Circuit Outline CGHV14800-AMP Demonstration Amplifier Circuit Schematic Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV14800 Rev 0.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV14800F (Package Type — 440117) Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV14800 Rev 0.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV14800F Type Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Product Line Parameter Upper Frequency 1 Power Output Type Value Units 1.4 GHz 800 W F = Flanged P = Package - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV14800 Rev 0.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV14800F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV14800-TB CGHV14800F-AMP Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV14800 Rev 0.2 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV14800 Rev 0.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf