MCC MCQ6005 Dual n -channel mosfet Datasheet

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omponents
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MCQ6005
Features
•
Halogen free available upon request by adding suffix "-HF"
•
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
•
Epoxy meets UL 94 V-0 flammability rating
•
Moisture Sensitivity Level 1
Dual
N -Channel Mosfet
SOP-8
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
5.0
A
3.5
A
Continuous Drain Current
(t ≤10s) (note 1)
Continuous Drain Current
Tc=100 ℃
ID (100℃)
Pulsed Drain Current (note 2)
IDM
24
A
Power Dissipation
PD
2.0
W
RθJA
62.5
℃/W
Thermal Resistance from
Junction to Ambient
Operating Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~+150
B
D
Unit
A
C
F
E
K
H
J
G
℃
DIMENSIONS
Equivalent Circuit
DIM
A
B
C
D
E
F
G
H
J
K
θ
Revision: A
INCHES
MIN
MAX
0.053
0.069
1.350
0.004
0.010
0.053
0.061
0.013
0.020
0.007
0.010
0.185
0.200
0.050(BSC)
0.228
0.244
0.150
0.157
0.016
0.050
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
1.270(BSC)
5.800
6.200
3.800
4.000
0.400
1.270
0°
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8°
MM
MIN
0°
MAX
1.750
NOTE
8°
2017/02/10
MCC
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Electrical characteristics (Ta=25
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
VGS(th)
VDS=VGS,ID=250μA
1.2
1.6
2.5
V
RDS(ON)
VGS=10V, ID=5A
-
26
35
mΩ
RDS(ON)
VGS=4.5V, ID=5A
-
32
45
mΩ
gFS
VDS=5V,ID=5A
11
-
-
S
-
979
-
PF
-
120
-
PF
-
100
-
PF
-
5.2
-
nS
Off Characteristics
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=30V,VGS=0V,
F=1.0MHz
Crss
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=30V, RL=6.7Ω
-
3
-
nS
td(off)
VGS=10V,RG=3Ω
-
17
-
nS
-
2.5
-
nS
-
22
nC
-
3.3
nC
-
5.2
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=30V,ID=5A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
VSD
(Note 2)
VGS=0V,IS=5A
IS
-
-
1.2
V
5
A
Notes :
1. The value in any given application depends on the user’s specific board design.
2. Repetitive rating : Pulse width limited by junction temperature.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
4. These parameters have no way to verify.
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Typical Characteristics
R
ID- Drain Current (A)
Normalized On-Resistance
Micro Commercial Components
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-Junction Temperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Revision: A
Figure 6 Source- Drain Diode Forward
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Ordering Information :
Device
Packing
Part Number-TP
Tape&Reel:4Kpcs/Reel
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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Revision: A
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