IRF IR1168 Dual smart rectifier driver ic Datasheet

Datasheet No – PD97382
September 26, 2011
IR1168S
DUAL SMART RECTIFIER DRIVER IC
Product Summary
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Secondary-side
high
speed
controller
for
synchronous rectification in resonant half bridge
topologies
200V proprietary IC technology
Max 500KHz switching frequency
Anti-bounce logic and UVLO protection
4A peak turn off drive current
Micropower start-up & ultra low quiescent current
10.7V gate drive clamp
70ns turn-off propagation delay
Wide Vcc operating range
Direct sensing for both Synchronous Rectifiers
Minimal component count
Simple design
Lead-free
Topology
LLC Half-bridge
VD
200V
VOUT
10.7V Clamped
Io+ & I o- (typical)
+1A & -4A
Turn on Propagation Delay
60ns (typical)
Turn off Propagation Delay
70ns (typical)
Package Options
Typical Applications
•
LCD & PDP TV, Telecom SMPS, AC-DC adapters
8-Lead SOIC
Typical Connection Diagram
Vin
SR1
C1
Cdc
M1
Rg1
Lr
1
2
1
2
3
4
C2
Rtn
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M2
GATE1
VCC
GATE2
GND
VS1
VS2
VD1
VD2
8
7
6
5
Cout
IR1168
IR1168
LOAD
Rg2
SR2
© 2009 International Rectifier
IR1168S
Table of Contents
Page
Description
3
Qualification Information
4
Absolute Maximum Ratings
5
Electrical Characteristics
6
Functional Block Diagram
8
Input/Output Pin Equivalent Circuit Diagram
9
Lead Definitions
10
Lead Assignments
10
Application Information and Additional Details
12
Package Details
16
Tape and Reel Details
17
Part Marking Information
18
Ordering Information
19
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© 2009 International Rectifier
2
IR1168S
Description
IR1168 is dual smart secondary-side rectifier driver IC designed to drive two N-Channel power MOSFETs used as
synchronous rectifiers in resonant converter applications. The IC can control one or more paralleled N MOSFETs
to emulate the behavior of Schottky diode rectifiers. The drain to source for each rectifier MOSFET voltage is
sensed differentially to determine the level of the current and the power switch is turned ON and OFF in close
proximity of the zero current transition. Ruggedness and noise immunity are accomplished using an advanced
blanking scheme and double-pulse suppression that allows reliable operation in fixed and variable frequency
applications.
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IR1168S
Qualification Information
†
††
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
IC Latch-Up Test
RoHS Compliant
†
††
†††
Industrial
Comments: This family of ICs has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
†††
MSL2 260°C
SOIC8N
(per IPC/JEDEC J-STD-020)
Class B
(per JEDEC standard JESD22-A115)
Class 2
(per EIA/JEDEC standard EIA/JESD22-A114)
Class I, Level A
(per JESD78)
Yes
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
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© 2009 International Rectifier
4
IR1168S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions.
Parameters
Supply Voltage
Cont. Drain Sense Voltage
Pulse Drain Sense Voltage
Source Sense Voltage
Gate Voltage
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Package Power Dissipation
Switching Frequency
Symbol
VCC
VD
VD
VS
VGATE
TJ
TS
RθJA
PD
fsw
Min.
-0.3
-3
-5
-3
-0.3
-40
-55
Max.
20
200
200
20
20
150
150
128
970
500
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Units
V
V
V
V
V
°C
°C
°C/W
mW
kHz
Remarks
VCC=20V, Gate off
SOIC-8
SOIC-8, TAMB=25°C
© 2009 International Rectifier
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IR1168S
Electrical Characteristics
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and
junction temperature range TJ from – 25° C to 125°C . Typical values represent the median values, which are
related to 25°C. If not otherwise stated, a supply voltage of VCC = 15 V is assumed for test condition.
Supply Section
Parameters
Supply Voltage Operating
Range
VCC Turn On Threshold
VCC Turn Off Threshold
(Under Voltage Lock Out)
VCC Turn On/Off Hysteresis
Symbol
Min.
VCC
VCC ON
VCC UVLO
Typ.
Max.
Units
8.6
7.5
8.1
18
8.5
V
V
7
7.6
8
V
18
60
3.8
140
V
mA
mA
mA
µA
VCC HYST
Operating Current
ICC
Quiescent Current
Start-up Current
IQCC
ICC START
0.5
14
48
2.6
Comparator Section
Parameters
Turn-off Threshold
Turn-on Threshold
Hysteresis
Input Bias Current
Input Bias Current
Comparator Input Offset
Symbol
VTH1
VTH2
VHYST
IIBIAS1
IIBIAS2
VOFFSET
Min.
-12
-220
One-Shot Section
Parameters
Blanking pulse duration
Symbol
tBLANK
Reset Threshold
Hysteresis
Minimum On Time Section
Parameters
Minimum on time
GBD
CLOAD =1nF, fSW = 400kHz
CLOAD =4.7nF, fSW = 400kHz
VCC=VCC ON - 0.1V
Typ.
-6
-140
141
1
10
Max.
0
-80
Min.
9
Typ.
17
2.5
5.4
40
Max.
25
Units
Remarks
µs
V
VCC=10V – GBD
V
VCC=20V – GBD
mV VCC=10V - GBD
Min.
500
Typ.
750
Max.
1000
Units
ns
VTH3
VHYST3
Symbol
TONmin
Remarks
10
50
2
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Units
mV
mV
mV
µA VD = -50mV
µA VD = 200V
mV
GBD
Remarks
Remarks
© 2009 International Rectifier
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IR1168S
Electrical Characteristics
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and
junction temperature range TJ from – 25° C to 125°C . Typical values represent the median values, which are
related to 25°C. If not otherwise stated, a supply voltage of VCC = 15 V is assumed for test condition.
Gate Driver Section
Parameters
Gate Low Voltage
Gate High Voltage
Rise Time
Symbol
VGLO
VGTH
tr1
tr2
Fall Time
tf1
tf2
Turn on Propagation Delay
tDon
Turn off Propagation Delay
tDoff
Pull up Resistance
rup
Pull down Resistance
rdown
Output Peak Current (source) IO source
Output Peak Current (sink)
IO sink
Min.
8.5
Typ.
0.3
10.7
10
80
5
25
60
70
5
1.2
1
4
Max.
0.5
13.5
120
120
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Units
V
V
ns
ns
ns
ns
ns
ns
Ω
Ω
A
A
Remarks
IGATE = 200mA
VCC=12V-18V (internally clamped)
CLOAD = 1nF
CLOAD = 4.7nF
CLOAD = 1nF
CLOAD = 4.7nF
VDS to VGATE -100mV overdrive
VDS to VGATE -100mV overdrive
IGATE = 15mA - GBD
IGATE = -200mA
CLOAD = 1nF - GBD
CLOAD = 1nF - GBD
© 2009 International Rectifier
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IR1168S
Functional Block Diagram
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IR1168S
I/O Pin Equivalent Circuit Diagram
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IR1168S
Lead Definitions
PIN#
1
2
3
4
5
6
7
8
Symbol
GATE1
VCC
VS1
VD1
VD2
VS2
GND
GATE2
Description
Gate Drive Output 1
Supply Voltage
Sync FET 1 Source Voltage Sense
Sync FET 1 Drain Voltage Sense
Sync FET 2 Drain Voltage Sense
Sync FET 2 Source Voltage Sense
Analog and Power Ground
Gate Drive Output 2
Lead Assignments
1
GATE1
GATE2
8
2
VCC
GND
7
3
VS1
VS2
6
4
VD1
VD2
5
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IR1168S
Detailed Pin Description
VCC: Power Supply
This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn
off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC.
To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as close as
possible to the IR1168. This pin is not internally clamped.
GND: Ground
This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to
this point.
VD1 and VD2: Drain Voltage Sense
These are the two high-voltage pins used to sense the drain voltage of the two SR power MOSFETs. Routing
between the drain of the MOSFET and the IC pin must be particularly optimized.
VS1 and VS2: Source Voltage Sense
These are the two differential sense pins for the two source pins of the two SR power MOSFETs. This pin must
not be connected directly to the GND pin (pin 7) but must be used to create a kelvin contact as close as possible
to the power MOSFET source pin.
GATE1 and GATE2: Gate Drive Outputs
These are the two gate drive outputs of the IC. The gate voltage is internally clamped and has a +1A/-4A peak
drive capability. Although this pin can be directly connected to the synchronous rectifier (SR) MOSFET gate, the
use of gate resistor is recommended (specifically when putting multiple MOSFETs in parallel). Care must be taken
in order to keep the gate loop as short and as small as possible in order to achieve optimal switching performance.
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IR1168S
Application Information and Additional Details
State Diagram
POWER ON
Gate Inactive
UVLO MODE
VCC < VCCon
Gate Inactive
ICC = ICC START
VCC > VCCon
VCC < VCCuvlo
NORMAL
Gate Active
Gate PW ≥ MOT
UVLO Mode:
The IC is in the UVLO mode when the VCC pin voltage is below VCCUVLO. The UVLO mode is accessible from
any other state of operation. In the UVLO state, most of the internal circuitry is unbiased and the IC draws a
quiescent current of ICCSTART.
The IC remains in the UVLO condition until the voltage on the VCC pin exceeds the VCC turn on threshold
voltage, VCC ON.
Normal Mode:
The IC enters in normal operating mode once the UVLO voltage has been exceeded. At this point the gate drivers
are operating and the IC will draw a maximum of ICC from the supply voltage source.
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IR1168S
General Description
The IR1168 Dual Smart Rectifier controller IC is the industry first dedicated high-voltage controller IC for
synchronous rectification in resonant converter applications. The IC can emulate the operation of the two
secondary rectifier diodes by correctly driving the synchronous rectifier (SR) MOSFETs in the two secondary legs.
The core of this device are two high-voltage, high speed comparators which sense the drain to source voltage of
the MOSFETs differentially. The device current is sensed using the RDSON as a shunt resistance and the GATE pin
of the MOSFET is driven accordingly. Dedicated internal logic then manages to turn the power device on and off in
close proximity of the zero current transition.
IR1168 further simplifies synchronous rectifier control by offering the following power management features:
-Wide VCC operating range allows the IC to be directly powered from the converter output
-Shoot through protection logic that prevents both the GATE outputs from the IC to be high at the same time
-Device turn ON and OFF in close proximity of the zero current transition with low turn-on and turn-off propagation
delays; eliminates reactive power flow between the output capacitors and power transformer
-Internally clamped gate driver outputs that significantly reduce gate losses.
The SmartRectifier™ control technique is based on sensing the voltage across the MOSFET and comparing it with
two negative thresholds to determine the turn on and off transitions for the device. The rectifier current is sensed
by the input comparators using the power MOSFET RDSON as a shunt resistance and its GATE is driven depending
on the level of the sensed voltage vs. the 3 thresholds shown below.
VGate
VDS
VTH2
VTH1
VTH3
Figure 1: Input comparator thresholds
Turn-on phase
When the conduction phase of the SR FET is initiated, current will start flowing through its body diode, generating
a negative VDS voltage across it. The body diode has generally a much higher voltage drop than the one caused by
the MOSFET on resistance and therefore will trigger the turn-on threshold VTH2.
When VTH2 is triggered, IR1168 will drive the gate of MOSFET on which will in turn cause the conduction voltage
VDS to drop down to ID*RDSON. This drop is usually accompanied by some amount of ringing, that could trigger the
input comparator to turn off; hence, a fixed Minimum On Time (MOT) blanking period is used that will maintain the
power MOSFET on for a minimum amount of time.
The fixed MOT limits the minimum conduction time of the secondary rectifiers and hence, the maximum switching
frequency of the converter.
Turn-off phase
Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level where
VDS will cross the turn-off threshold VTH1.
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IR1168S
Since the device currents are sinusoidal here, the device VDS will cross the VTH1 threshold with a relatively low
dV/dt. Once the threshold is crossed, the current will start flowing again through the body diode, causing the VDS
voltage to jump negative. Depending on the amount of residual current, VDS may once again trigger the turn-on
threshold; hence, VTH2 is blanked for a time duration tBLANK after VTH1 is triggered. When the device VDS
crosses the positive reset threshold VTH3, tBLANK is terminated and the IC is ready for next conduction cycle as
shown below.
VTH3
IDS
VDS
T1
T2
VTH1
VTH2
Gate Drive
Blanking
MOT
tBLANK
time
Figure 2: Secondary currents and voltages
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IR1168S
VCC
VCC ON
VCC UVLO
t
UVLO
NORMAL
UVLO
Figure 3: Vcc UVLO
VTH1
VDS
VTH2
t Don
t Doff
VGate
90%
50%
10%
t rise
tfall
Figure 4: Timing waveform
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IR1168S
9.0 V
VCC UVLO Thresholds
ISUPPLY (mA)
10
1
0.1
8.5 V
8.0 V
7.5 V
VCC ON
0.01
VCC UVLO
6V
8V
10 V
12 V 14 V
16 V 18 V
7.0 V
-50 °C
Supply voltage
Figure 5: Supply Current vs. Supply Voltage
14.9
ICC Supply Current (mA)
ICC Supply Current (mA)
150 °C
Icc @400KHz, CLOAD=1nF
14.8
2.65
2.60
2.55
2.50
2.45
2.40
2.35
-50 °C
50 °C
100 °C
Temperature
Figure 6: Undervoltage Lockout vs. Temperature
IQCC
2.70
0 °C
14.7
14.6
14.5
14.4
14.3
14.2
0 °C
50 °C
100 °C
Temperature
14.1
-50 °C
150 °C
0 °C
50 °C
100 °C
Temperature
150 °C
Figure 8: Icc Supply Currrent @1nF Load vs.
Temperature
Figure 7: Icc Quiescent Currrent vs. Temperature
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-3.8
-124.0
-4.0
-125.0
-4.2
-126.0
VTH2 Thresholds (mV)
VTH1 Threshold (mV)
IR1168S
-4.4
-4.6
-4.8
-129.0
Ch2
0 °C
50 °C
Temperature
100 °C
Ch1
-130.0
Ch1
-131.0
-50 °C
150 °C
Figure 9: VTH1 vs. Temperature
0 °C
50 °C
100 °C
Temperature
150 °C
Figure 10: VTH2 vs. Temperature
810 ns
-119.0
800 ns
Ch2
-120.0
Ch1
790 ns
-121.0
Minimum On Time
Comparator Hysteresis VHYST (mV)
-128.0
Ch2
-5.0
-5.2
-50 °C
-127.0
-122.0
-123.0
-124.0
780 ns
770 ns
760 ns
750 ns
MOT_Ch1
-125.0
740 ns
-126.0
-50 °C
0 °C
50 °C
100 °C
Temperature
730 ns
-50 °C
150 °C
MOT_Ch2
0 °C
50 °C
100 °C
150 °C
Temperature
Figure 11: Comparator Hysteresis vs.
Temperature
Figure 12: MOT vs Temperature
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IR1168S
70 ns
60 ns
65 ns
Propagation Delay
Propagation Delay
55 ns
60 ns
55 ns
50 ns
50 ns
45 ns
45 ns
Ch1 Turn-off Propagation Delay
Ch2 Turn-off Propagation Delay
40 ns
40 ns
35 ns
-50 °C
Ch1 Turn-on Propagation Delay
Ch2 Turn-on Propagation Delay
0 °C
50 °C
Temperature
100 °C
35 ns
-50 °C
150 °C
100 °C
150 °C
Figure 14: Turn-off Propagation Delay vs.
Temperature
11.5 V
9 ns
Ch1 VGH@Vcc=12V
Ch2 VGH@Vcc=12V
Ch1 VGH@Vcc=18V
Ch2 VGH@Vcc=18V
9 ns
Gate Tr and Tf @ 1nF Load
Gate Clamping Voltage
50 °C
Temperature
Figure 13: Turn-on Propagation Delay vs.
Temperature
11.0 V
10.5 V
10.0 V
-50 °C
0 °C
0 °C
50 °C
100 °C
8 ns
8 ns
7 ns
Temperature
Tr_Ch2
Tf_Ch1
Tf_Ch2
7 ns
6 ns
6 ns
5 ns
-50 °C
150 °C
Tr_Ch1
0 °C
50 °C
100 °C
150 °C
Temperature
Figure 15: Gate Clamping Voltage vs.
Temperature
Figure 16: Gate Output Tr and Tf time @ 1nF
Load vs. Temperature
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IR1168S
Package Details: SOIC8N
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IR1168S
Tape and Reel Details: SOIC8N
LOADED TAPE FEED DIRECTION
A
B
H
D
F
C
NOTE : CONTROLLING
DIM ENSION IN M M
E
G
CARRIER TAPE DIMENSION FOR
Metric
Code
Min
Max
A
7.90
8.10
B
3.90
4.10
C
11.70
12.30
D
5.45
5.55
E
6.30
6.50
F
5.10
5.30
G
1.50
n/a
H
1.50
1.60
8SOICN
Imperial
Min
Max
0.311
0.318
0.153
0.161
0.46
0.484
0.214
0.218
0.248
0.255
0.200
0.208
0.059
n/a
0.059
0.062
F
D
C
B
A
E
G
H
REEL DIMENSIONS FOR 8SOICN
Metric
Code
Min
Max
A
329.60
330.25
B
20.95
21.45
C
12.80
13.20
D
1.95
2.45
E
98.00
102.00
F
n/a
18.40
G
14.50
17.10
H
12.40
14.40
Imperial
Min
Max
12.976
13.001
0.824
0.844
0.503
0.519
0.767
0.096
3.858
4.015
n/a
0.724
0.570
0.673
0.488
0.566
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IR1168S
Part Marking Information
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IR1168S
Ordering Information
Standard Pack
Base Part Number
IR1168
Package Type
SOIC8N
Complete Part Number
Form
Quantity
Tube/Bulk
95
IR1168SPBF
Tape and Reel
2500
IR1168STRPBF
The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no
responsibility for the consequences of the use of this information. International Rectifier assumes no responsibility for any
infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by
implication or otherwise under any patent or patent rights of International Rectifier. The specifications mentioned in this document are
subject to change without notice. This document supersedes and replaces all information previously supplied.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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