Preliminary Technical Information IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 X2-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 8A 500m N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 8 A IDM TC = 25C, Pulse Width Limited by TJM 16 A IA TC = 25C 4 A EAS TC = 25C 250 mJ dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns PD TC = 25C 150 W -55 ... +150 C TJ D (Tab) TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) GD S TJM 150 C Tstg -55 ... +150 C G = Gate S = Source 300 260 °C °C Features 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 2.50 3.00 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 D (Tab) D = Drain Tab = Drain International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 5.0 V 100 nA TJ = 125C 10 A 150 A Applications 500 m © 2015 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100649A(6/15) IXTY8N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 4.8 Ciss Coss IXTA8N65X2 IXTP8N65X2 8.0 S 6 800 pF 495 pF 2.2 pF 43 129 pF pF 24 ns 28 ns 53 ns 24 ns 12.0 nC 3.1 nC 4.4 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.83 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 8 A Repetitive, pulse Width Limited by TJM 32 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 4A, -di/dt = 100A/μs 200 1.65 16.3 VR = 100V ns μC A Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY8N65X2 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 18 8 VGS = 10V 8V 7 14 6V 7V 12 5 I D - Amperes I D - Amperes VGS = 10V 8V 16 7V 6 4 3 10 8 6 2 6V 4 1 5V 2 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4 8 VDS - Volts 12 16 20 24 28 32 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 4.0 8 VGS = 10V 7V 7 3.0 RDS(on) - Normalized 6V 5 4 3 VGS = 10V 3.5 6 I D - Amperes IXTA8N65X2 IXTP8N65X2 5V I D = 8A 2.5 2.0 I D = 4A 1.5 1.0 2 0.5 1 4V 0.0 0 0 1 2 3 4 5 6 7 8 9 -50 10 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 4.5 125 150 9 VGS = 10V 4.0 8 TJ = 125ºC 7 3.5 6 3.0 I D - Amperes R DS(on) - Normalized -25 VDS - Volts 2.5 TJ = 25ºC 2.0 5 4 3 1.5 2 1.0 1 0 0.5 0 2 4 6 8 10 12 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 14 16 18 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY8N65X2 Fig. 7. Input Admittance IXTA8N65X2 IXTP8N65X2 Fig. 8. Transconductance 10 14 TJ = - 40ºC 9 12 8 10 g f s - Siemens I D - Amperes 7 6 5 TJ = 125ºC 25ºC 4 - 40ºC 3 25ºC 8 125ºC 6 4 2 2 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 1 2 3 4 VGS - Volts 5 6 7 8 9 10 11 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 25 20 8 15 6 VGS - Volts I S - Amperes VDS = 325V 10 I D = 4A I G = 10mA 4 TJ = 125ºC TJ = 25ºC 5 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 2 4 6 8 10 12 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Output Capacitance Stored Energy 10000 9 1000 7 100 E OSS - MicroJoules Capacitance - PicoFarads 8 Ciss Coss 10 Crss 1 6 5 4 3 2 1 f = 1 MHz 0.1 0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 VDS - Volts 400 500 600 IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 100 1 RDS(on) Limit 10 Z (th)JC - ºC / W I D - Amperes 25µs 100µs 1 1ms 0.1 TJ = 150ºC 0.1 10ms TC = 25ºC Single Pulse DC 0.01 10 100 0.01 0.00001 1,000 0.0001 VDS - Volts 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-220 Outline E TO-252 AA Outline TO-263 Outline E C2 A 2 3 H1 Q A1 D2 D D1 D 1 A1 E1 L1 L2 A oP 4 H D1 E1 b2 b L3 c e 0.43 [11.0] e A2 EJECTOR PIN L1 0 L 0.34 [8.7] 0.66 [16.6] A2 e 1 - Gate 2,4 - Drain 3 - Source © 2015 IXYS CORPORATION, All Rights Reserved 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS REF: T_8N65X2(X2-R2T5) 6-05-15-A