ON NRVTS560EMFST3G Schottky rectifier Datasheet

NRVTS560EMFS
Exceptionally Low Leakage
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
•
Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
60 VOLTS
5,6
1,2,3
MARKING
DIAGRAM
Typical Applications
• Switching Power Supplies including Wireless, Smartphone and
•
•
•
•
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
•
1
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TE0560
A
Y
W
ZZ
Mechanical Characteristics:
•
•
•
•
A
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
A
C
TE0560
AYWWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Package
Shipping†
NRVTS560EMFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVTS560EMFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 0
1
Publication Order Number:
NRVTS560EMFS/D
NRVTS560EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
Average Rectified Forward Current
(Rated VR, TC = 168°C)
IF(AV)
5.0
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 167°C)
IFRM
10
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +175
°C
EAS
60
mJ
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
V
ESD Rating (Human Body Model)
TBD
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Max
Unit
RθJC
2.4
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Instantaneous Forward Voltage (Note 1)
(iF = 2.5 Amps, TJ = 25°C)
(iF = 5.0 Amps, TJ = 25°C)
Typ
Max
0.50
0.55
−
0.61
0.41
0.50
−
0.59
−
2
30
4
vF
(iF = 2.5 Amps, TJ = 125°C)
(iF = 5.0 Amps, TJ = 125°C)
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
Unit
V
iR
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
NRVTS560EMFS
TYPICAL CHARACTERISTICS
100
iF, INSTANTANEOUS FORWARD
CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 175°C
TA = 150°C
10
TA = 125°C
1
TA = 25°C
TA = −55°C
0.1
TA = 150°C
TA = 125°C
TA = 25°C
1
TA = −55°C
0.1
0.1
0.2
0.3
0.4
0.6
0.5
0.7
0.8
0
0.1
0.2
0.4
0.3
0.5
0.7
0.6
0.8
0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
IR, INSTANTANEOUS REVERSE CURRENT (A)
0
1.E+00
TA = 175°C
1.E−02
1.E−01
TA = 150°C
1.E−03
TA = 125°C
1.E−04
TA = 175°C
1.E−02
TA = 150°C
1.E−03
TA = 125°C
1.E−04
1.E−05
TA = 25°C
1.E−06
TA = 25°C
1.E−05
1.E−06
1.E−07
5
10
15
20
25
30
35
40
45
50
55 60
10
15
20
25
30
35
40
50
45
55
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
C, JUNCTION CAPACITANCE (pF)
1000
TJ = 25°C
100
0.1
5
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
IF(AV), AVERAGE FORWARD CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
TA = 175°C
10
1
10
12
11
10
9
DC
8
7
Square Wave
6
5
4
3
2
RqJC = 2.4°C/W
1
0
0
20
40
60
80
100
120
140
160 175
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Device
www.onsemi.com
3
60
NRVTS560EMFS
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
18
IPK/IAV
= 20
16
IPK/IAV = 10
14
12
10
Square Wave
8
IPK/IAV = 5
6
4
dc
2
0
0
1
2
3
4
5
6
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
50% (DUTY CYCLE)
R(t) (C/W)
10
1
20%
10%
5.0%
2.0%
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
1.0
10
100
1000
PULSE TIME (s)
Figure 8. Typical Thermal Characteristics
R(t) (C/W)
10
1
50% (DUTY CYCLE)
20%
0.1
10%
5.0%
2.0%
1.0%
0.01
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (s)
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
www.onsemi.com
4
NRVTS560EMFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE L
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
C
e
SEATING
PLANE
DETAIL A
A
0.10 C
SIDE VIEW
3X
2X
0.495
8X
4.560
b
0.10
C A B
0.05
c
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.30
5.15
4.70
4.90
5.10
3.80
4.00
4.20
6.15
6.00
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
2X
1.530
e/2
L
1
4
3.200
K
4.530
E2
PIN 5
(EXPOSED PAD)
L1
M
1.330
2X
0.905
1
G
D2
BOTTOM VIEW
0.965
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NRVTS560EMFS/D
Similar pages