NSR2030DMX 2A, 30V Schottky Half Bridge These half bridge Schottky barrier diodes are designed for the rectification of the high speed signal of wireless charging. The NSR2030DMX has a very low forward voltage that will reduce conduction loss. It is housed in a XDFN 2.0 x 1.35 x 0.4 mm package that is ideal for space constrained wireless applications. www.onsemi.com Features • Extremely Fast Switching Speed • Low Forward Voltage − 0.54 V (Typ) @ IF = 2 A • These Devices are Pb−Free, Halogen Free and are RoHS Compliant MARKING DIAGRAM Typical Applications • Low Voltage Half Bridge Rectification & Wireless Charging 3D M G MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) (Note 1) Rating Value Unit Reverse Voltage VR 30 V Forward Current (DC) IF 2.0 A Forward Current Surge Peak (60 Hz, 1 cycle) IFSM 8.0 A Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 ms t=1s IFSM = Specific Device Code = Date Code = Pb−Free Package PIN CONNECTIONS M Symbol 3D M G XDFN4 2.0x1.35 CASE 711BD A 55 10 5.0 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All specifications pertain to a single diode. DEVICE SCHEMATIC THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board TA = 25°C Derate above 25°C PD (Note 2) 0.634 W 5.07 mW/°C Thermal Resistance Junction to Ambient RqJA (Note 2) 197.2 °C/W Junction Temperature TJ +150 °C Storage Temperature Range Tstg −55 to +150 °C 2. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm2, 2 oz. copper trace, still air. ORDERING INFORMATION Device Package Shipping† NSR2030DMXTAG XDFN4 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 August, 2016 − Rev. 0 Publication Order Number: NSR2030DMX/D NSR2030DMX ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3) Symbol Min Typ Max Unit V(BR) 30 − − V Reverse Leakage (VR = 30 V) IR − 5.0 20 mA Forward Voltage (IF = 0.5 A) VF − 0.41 0.45 V Forward Voltage (IF = 1.0 A) VF − 0.46 0.55 V Forward Voltage (IF = 2.0 A) VF − 0.54 0.65 V Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) trr − 25 − ns Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 76 − pF Characteristic Reverse Breakdown Voltage (IR = 1.0 mA) 3. All specifications pertain to a single diode. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 NSR2030DMX 1.0E−01 IR, REVERSE CURRENT (mA) IF, FORWARD CURRENT (A) 10 1 0.1 150°C 125°C 0.01 150°C 1.0E−02 1.0E−03 125°C 1.0E−04 85°C 1.0E−05 1.0E−06 25°C 1.0E−07 1.0E−08 1.0E−09 1.0E−10 25°C 85°C 0.1 0.2 0.3 −55°C 0.4 0.5 1.0E−11 0.6 10 15 20 Figure 2. Reverse Leakage TA = 25°C 120 100 80 60 40 20 0 5 10 15 20 25 30 30 25 Figure 1. Forward Voltage 140 CT, CAPACITANCE (pF) 5 VR, REVERSE VOLTAGE (V) 160 0 −55°C VF, FORWARD VOLTAGE (V) IFSM, FORWARD SURGE MAX CURRENT (A) 0.001 0.0 60 Based on square wave currents TJ = 25°C prior to surge 50 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Tp, PULSE ON TIME (ms) VR, REVERSE VOLTAGE (V) Figure 3. Capacitance Figure 4. Non−Repetitive Peak Forward Current, Max Values 1000 R(t) (°C/W) 100 D = 0.5 0.2 0.1 0.05 10 0.02 0.01 1 Based on square wave currents TJ = 25°C prior to surge SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (s) Figure 5. Thermal Response www.onsemi.com 3 1 10 100 1000 NSR2030DMX PACKAGE DIMENSIONS XDFN4 2.0x1.35, 0.525P CASE 711BD ISSUE O PIN ONE REFERENCE 0.10 C ÇÇÇ ÇÇÇ 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE PADS AS WELL AS THE TERMINALS. A B D E TOP VIEW DIM A A1 b D D2 E E2 e e1 G L A 0.10 C 6X A1 0.08 C 4X b e 2X SEATING PLANE C SIDE VIEW NOTE 4 e1 4X 1 0.10 M C A B 0.05 M C RECOMMENDED MOUNTING FOOTPRINT NOTE 3 L 2X MILLIMETERS MIN MAX 0.34 0.44 0.00 0.05 0.225 0.325 2.00 BSC 0.70 0.80 1.35 BSC 0.70 0.80 0.525 BSC 0.475 BSC 1.12 1.23 0.15 0.25 1.85 2X E2 0.85 G 2X 0.935 G/2 2X D2 PACKAGE OUTLINE BOTTOM VIEW 1.45 1 2X 4X 0.385 0.475 4X 0.525 0.275 DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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