Mitsubishi M5M4V4405CTP-7 Edo (hyper page mode) 4194304-bit(1048576-word by 4-bit) dynamic ram Datasheet

MITSUBISHI
LSIsLSIs
MITSUBISHI
M5M4V4405CJ,TP-6,-7,-6S,-7S
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDOEDO
(HYPER
(HYPER
PAGE
PAGE
MODE)
MODE)
4194304-BIT
4194304-BIT(1048576-WORD
(1048576-WORD BY BY
4-BIT)
4-BIT)
DYNAMIC
DYNAMIC
RAM
RAM
DESCRIPTION
This is a family of 1048576-word by 4-bit dynamic RAMS,
fabricated with the high performance CMOS process,and is ideal
for large-capacity memory systems where high speed, low power
dissipation , and low costs are essential.
The use of quadruple-layer polysilicon process combined with
silicide technology and a single-transistor dynamic storage stacked
capacitor cell provide high circuit density at reduced costs.
Multiplexed address inputs permit both a reduction in pins and an
increase in system densities.
Self or extended refresh current is low enough for battery
back-up application.
FEATURES
RAS
CAS Address OE
Cycle Power
dissipaaccess access access access
tion
time
time
time
time
time
(max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW)
Type name
M5M4V4405CXX-6, -6S
M5M4V4405CXX-7, -7S
60
70
15
20
30
35
15
20
110
130
264
231
PIN CONFIGURATION (TOP VIEW)
DQ1 1
26 VSS
DQ2 2
25 DQ4
W 3
24 DQ3
RAS 4
23 CAS
A9 5
22 OE
A0 9
18 A8
A1 10
17 A7
A2 11
16 A6
A3 12
15 A5
VCC 13
14 A4
XX=J, TP
Standard 26 pin SOJ, 26 pin TSOP(II)
Single 3.3V±0.3V supply
Low stand-by power dissipation
CMOS lnput level .................................................1.8mW(Max)*
CMOS lnput level ................................................180µW(Max)
Low operating power dissipation
M5M4V4405Cxx-6, -6S .....................................288.0mW (Max)
M5M4V4405Cxx-7, -7S ....................................252.0mW (Max)
Self refresh capabiility*
Self refresh current ..............................................100µA(max)
Extended refresh capability*
Extended refresh current ....................................100µA(max)
Hyper-page mode (1024-bit random access), Read-modify- write,
RAS-only refresh CAS before RAS refresh, Hidden refresh, CBR
self refresh(-6S,-7S) capabilities.
Early-write mode and OE and W to control output buffer impedance
1024 refresh cycles every 16.4ms (A0~A9)
1024refresh cycle every128ms (A0~A9)*
*: Applicable to self refresh version (M5M4V4405Cxx-6S,-7S:
option) only
APPLICATION
Lap top personal computer,Solid state disc, Microcomputer
memory, Refresh memory for CRT
PIN DESCRIPTION
Pin name
A0~A9
DQ1~DQ4
RAS
CAS
W
OE
VCC
VSS
1
Function
Address inputs
Data inputs / outputs
Row address strobe input
Column address strobe input
Write control input
Output enable input
Power supply (+3.3V)
Ground (0V)
Outline 26P0J (300mil SOJ)
DQ1 1
26 VSS
DQ2 2
25 DQ4
W 3
24 DQ3
RAS 4
23 CAS
A9 5
22 OE
A0 9
18 A8
A1 10
17 A7
A2 11
16 A6
A3 12
15 A5
VCC 13
14 A4
Outline 26P3Z-E (300mil TSOP)
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
FUNCTION
Hyper Page mode, RAS-only refresh, and delayed-write. The input
conditions for each are shown in Table 1.
In addition to normal read, write, and read-modify-write operations
the M5M4V4405CJ,TP provide, a number of other functions, e.g.,
Table 1 Input conditions for each mode
Inputs
Input/Output
Operation
Read
Write (Early write)
Write (Delayed write)
Read-modify-write
RAS-only refresh
Hidden refresh
CAS before RAS refresh
Self refresh*
Stand-by
RAS
CAS
W
OE
ACT
ACT
ACT
ACT
ACT
ACT
ACT
ACT
NAC
ACT
ACT
ACT
ACT
NAC
ACT
ACT
ACT
DNC
NAC
ACT
ACT
ACT
DNC
DNC
ACT
DNC
NAC
ACT
DNC
ACT
DNC
DNC
DNC
NAC
NAC
DNC
Row Column
address address
APD
APD
APD
APD
APD
DNC
DNC
DNC
DNC
APD
APD
AP
D
APD
DNC
DNC
DNC
DNC
DNC
Input
Output
OPN
APD
APD
APD
DNC
OPN
DNC
VLD
OPN
IVD
VLD
OPN
VLD
OPN
OPN
DNC
DNC
OPN
Refresh
Remark
YES
YES
YES
YES
YES
YES
YES
YES
NO
Hyper
Page
mode
identical
Note : ACT : active, NAC : nonactive, DNC : don' t care, VLD : valid, IVD : Invalid, APD : applied, OPN : open
BLOCK DIAGRAM
VCC (3.3V)
COLUMN ADDRESS
STROBE INPUT CAS
ROW ADDRESS RAS
STROBE INPUT
WRITE CONTROL
INPUT
CLOCK GENERATOR
CIRCUIT
W
A0 ~ A9
ADDRESS INPUTS
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
2
VSS (0V)
COLUMN DECODER
(4)
DATA IN
BUFFERS
DQ1
DQ2
DQ3
DQ4
SENSE REFRESH
AMPLIFER & I /O CONTROL
ROW &
COLUMN
ADDRESS
BUFFER
ROW
A 0~
A9 DECODER
MEMORY CELL
(4,194,304 BITS)
DATA
INPUTS /
OUTPUTS
(4)
DATA OUT
BUFFERS
OUTPUT
OE ENABLE
INPUT
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VI
VO
IO
Pd
Topr
Tstg
Parameter
Supply voltage
Input voltage
Output voltage
Output current
Power dissipation
Operating temperature
Storage temperature
Conditions
Ratings
-0.5 ~ 4.6
-0.5 ~ 4.6
-0.5 ~ 4.6
With respect to VSS
50
1000
0 ~ 70
-65 ~ 150
Ta=25 C
RECOMMENDED OPERATING CONDITIONS (Ta=0~70˚C, unless otherwise noted)
Symbol
VCC
VSS
VIH
VIL
Parameter
Min
Supply voltage
Supply voltage
High-level input voltage, all inputs
DQ1~DQ4
Low-level input voltage
others
3.0
0
2.0
-0.3
-0.3
Unit
V
V
V
mA
mW
C
C
Limits
Nom
Max
3.3
0
3.6
0
(Note 1)
Unit
VCC+0.3
V
V
V
0.8
0.8
V
V
Note 1 : All voltage values are with respect to VSS.
ELECTRICAL CHARACTERISTICS (Ta=0~70˚C, VCC=3.3V± 0.3V, VsS=0V, unless otherwise noted)
Symbol
VOH
VOL
IOZ
II
ICC1 (AV)
ICC2 (AV)
ICC3 (AV)
ICC4(AV)
ICC6(AV)
ICC8(AV)*
ICC9(AV)*
3
Parameter
Test conditions
High-level output voltage
Low-level output voltage
Off-state output current
Input current
Average supply current
from VCC
operating
(Note 3,4,5)
Supply current from VcC ,
stand-by
(Note 6)
IOH=-2mA
IOL=2mA
Q floating, 0V≤VOUT≤VCC
0V≤VIN≤VCC+0.3V, Other inputs pins=0V
Min
2.4
(Note 2)
Limits
Typ
0
-5
-5
RAS, CAS cycling
tRC=tWC=min.
M5M4V4405C-7,-7S output open
RAS=CAS =VIH, output open
M5M4V4405C-6,-6S
M5M4V4405C
M5M4V4405C(S)
RAS=CAS≥VCC -0.2V
output open
Max
Vcc
0.4
5
5
mA
70
2
0.5
80
tRC=min.
M5M4V4405C-7,-7S output open
70
Average supply current
from VCC
Hyper-Page-Mode
(Note 3,4,5)
Average supply current
from VCC, CAS before
RAS refresh mode
(Note 3)
M5M4V4405C-6,-6S RAS=VIL, CAS cycling
80
tPC=min.
M5M4V4405C-7,-7S output open
70
M5M4V4405C-6,-6S CAS before RAS refresh cycling
70
tRC=min.
M5M4V4405C-7,-7S output open
60
Average supply current
from VCC
Self-Refresh cycle (Note 6)
M5M4V4405C(S)
mA
0.05 *
M5M4V4405C-6,-6S RAS cycling, CAS= VIH
(Note 6)
V
V
µA
µA
80
Average supply current
from VCC
refreshing
(Note 3,5)
Average supply current
from VCC
Extended-Refresh cycle
Unit
mA
mA
mA
RAS cycling CAS≤0.2V or CAS
before RAS refresh cycling
RAS≤0.2V or ≥VCC-0.2V
CAS≤0.2V or ≥VCC-0.2V
W≤0.2V (Except for RAS falling
edge) or ≥VCC-0.2V
OE≤0.2V or ≥VCC-0.2V
A0~A9 ≤0.2V or≥VCC-0.2V
DQ=open
tRC=125µs, tRAS=tRAS min ~1µs
100
µA
RAS=CAS≤0.2V
output open
100
µA
Note 2: Current flowing into an IC is positive, out is negative.
3: ICC1 (AV), ICC3 (AV), ICC4 (AV) and ICC6 (AV) are dependent on cycle rate. Maximum current is measured at the fastest cycle rate.
4: ICC1 (AV) and ICC4 (AV) are dependent on output loading. Specified values are obtained with the output open.
5: Column Addres can be changed once or less while RAS=VIL and CAS=VIH.
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
CAPACITANCE (Ta=0~70˚C, VCC=3.3V±0.3V, Vss=0V, unless otherwise noted)
Symbol
CI (A)
CI (CLK)
CI / O
Test conditions
Parameter
Input capacitance, address inputs
Input capacitance, clock inputs
Input/Output capacitance, data ports
Min
Limits
Typ
VI=VSS
f=1MHz
VI=25mVrms
Max
5
7
7
Unit
pF
pF
pF
SWITCHING CHARACTERISTICS (Ta=0~70˚C, VCC=3.3V±0.3V, Vss=0V, unless otherwise noted, see notes 6,14,15)
Symbol
Limits
Å@
Parameter
M5M4V4405C-6,-6S
Min
tCAC
tRAC
tAA
tCPA
tOEA
tOHC
tOHR
tCLZ
tOEZ
tWEZ
tOFF
tREZ
Access time from CAS
Access time from RAS
Column address access time
Access time from CAS precharge
Access time from OE
Output hold time from CAS
Output hold time from RAS
Output low impedance time from CAS low
Output disable time after OE high
Output disable time after WE low
Output disable time after CAS high
Output disable time after RAS high
(Note 7,8)
(Note 7,9)
(Note 7,10)
(Note 7,11)
(Note 7)
(Note 13)
(Note 7)
(Note 12)
(Note 12)
(Note 12,13)
(Note 12,13)
Max
15
60
30
33
15
5
5
5
M5M4V4405C-7,-7S
Min
ns
ns
ns
ns
ns
20
20
20
20
ns
ns
ns
ns
ns
ns
ns
5
5
5
15
15
15
15
Unit
Max
20
70
35
38
20
Note 6: An initial pause of 200µs is required after power-up followed by a minimum of eight initialization cycles (RAS only refresh or CAS before RAS refresh
cycles)ÅDÅ@Å@Å@Å@Å@Å@Å@Å@Å@Å@Å@Å@Å@ Å@
Note the RAS may be cycled during the initial pause. And eight initialization cycles are required after prolonged periods (greater than tREF(max)) of
RAS inactivity before proper device operation is achieved.
7: Measured with a load circuit equivalent to 100pF, VOH=2.4V(IOH=-2mA) and VOL=0.4V(IOL=2mA).
The reference levels for measuring of output signals are 2.0V(VOH) and 0.8V(VOL).
8: Assumes that tRCD≥tRCD(max) and tASC≥tASC(max) and tCP≥tCP(max).
9: Assumes that tRCD≤tRCD(max) and tRAD≤tRAD(max). If tRCD or tRAD is greater than the maximum recommended value shown in this table, tRAC will
increase by amount that tRCD exceeds the value shown.
10: Assumes that tRAD≥tRAD(max) and tASC≤tASC(max).
11: Assumes that tCP≤tCP(max) and tASC≥tASC(max).
12: tOEZ (max), tWEZ(max), tOFF(max) and tREZ(max) defines the time at which the output achieves the high impedance state(IOUT≤ | ±10µA |) and is
not reference to VOH(min) or VOL(max).
13: Output is disabled after both RAS and CAS go to high.
4
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
TIMING REQUIREMENTS (For Read, Write, Read-Modify-Write, Refresh, and Hyper-Page Mode Cycles)
(Ta=0~70˚C, VCC = 3.3V±0.3V, VSS =0V, unless otherwise noted, see notes 14,15)
Limits
Parameter
Symbol
M5M4V4405C-6,-6S
Min
tREF
tREF
tRP
tRCD
tCRP
tRPC
tCPN
tRAD
tASR
tASC
tRAH
tCAH
tDZC
tDZO
tRDD
tCDD
tODD
tT
Refresh cycle time
Refresh cycle time*
RAS high pulse width
Delay time, RAS low to CAS low
Delay time, CAS high to RAS low
Delay time, RAS high to CAS low
CAS high pulse width
Column address delay time from RAS low
Row address setup time before RAS low
Column address setup time before CAS low
Row address hold time after RAS low
Column address hold time after CAS low
Delay time, data to CAS low
Delay time, data to OE low
Delay time, RAS high to data
Delay time, CAS high to data
Delay time, OE high to data
Transition time
Max
M5M4V4405C-7,-7S
Min
16.4
128
(Note 16)
(Note 17)
(Note 18)
(Note 19)
(Note 19)
(Note 20)
(Note 20)
(Note 20)
(Note 21)
40
20
5
0
10
15
0
0
10
10
0
0
15
15
15
1
Max
16.4
128
50
45
20
5
0
13
15
0
0
10
10
0
0
20
20
20
1
30
13
50
50
35
13
Unit
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
50
ns
ns
ns
ns
ns
Note 14: The timing requirements are assumed tT =2ns.
Å@ 15: VIH(min) and VIL(max) are reference levels for measuring timing of input signals.
Å@ 16: tRCD(max) is specified as a reference point only. If tRCD is less than tRCD(max), access time is tRAC. If tRCD is greater than tRCD(max), access time is
controlled exclusively by tCAC or tAA.
Å@ 17: tRAD(max) is specified as a reference point only. If tRAD ≥ tRAD(max) and tASC ≤ tASC(max), access time is controlled exclusively by tAA.
Å@ 18: tASC(max) is specified as a reference point only. If tRCD ≥ tRCD(max) and tASC ≥ tASC(max), access time is controlled exclusively by tCAC.
Å@ 19: Either tDZC or tDZO must be satisfied.
Å@ 20: Either tRDD or tCDD or tODD must be satisfied.
Å@ 21: tT is measured between VIH(min) and VIL(max).
Read and Refresh Cycles
Limits
Parameter
Symbol
tRC
tRAS
tCAS
tCSH
tRSH
tRCS
tRCH
tRRH
tRAL
tCAL
tORH
tOCH
Read cycle time
RAS low pulse width
CAS low pulse width
CAS hold time after RAS low
RAS hold time after CAS low
Read Setup time before CAS low
Read hold time after CAS high
Read hold time after RAS high
Column address to RAS hold time
Column address to CAS hold time
RAS hold time after OE low
CAS hold time after OE low
Note 22: Either tRCH or tRRH must be satisfied for a read cycle.
5
M5M4V4405C-6,-6S
(Note 22)
(Note 22)
Min
110
60
10
48
15
0
0
0
30
18
15
15
Max
10000
10000
M5M4V4405C-7,-7S
Min
130
70
13
55
20
0
0
0
35
23
20
20
Unit
Max
10000
10000
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Write Cycle (Early Write and Delayed Write)
Limits
Parameter
Symbol
tWC
tRAS
tCAS
tCSH
tRSH
tWCS
tWCH
tCWL
tRWL
tWP
tDS
tDH
M5M4V4405C-6,-6S
Write cycle time
RAS low pulse width
CAS low pulse width
CAS hold time after RAS low
RAS hold time after CAS low
Write setup time before CAS low
(Note 24)
Write hold time after CAS low
CAS hold time after W low
RAS hold time after W low
Write pulse width
Data setup time before CAS low or W low
Data hold time after CAS low or W low
Min
110
60
10
48
10
0
10
10
10
10
0
10
Max
10000
10000
M5M4V4405C-7,-7S
Min
130
70
13
55
13
Unit
Max
10000
10000
0
13
13
13
13
0
13
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read-Write and Read-Modify-Write Cycles
Limits
Parameter
Symbol
tRWC
tRAS
tCAS
tCSH
tRSH
tRCS
tCWD
tRWD
tAWD
tOEH
Read write/read modify write cycle time
RAS low pulse width
CAS low pulse width
CAS hold time after RAS low
RAS hold time after CAS low
Read setup time before0 CAS low
Delay time, CAS low to W low
Delay time, RAS low to W low
Delay time, address to W low
OE hold time after W low
M5M4V4405C-6,-6S
(Note 23)
(Note 24)
(Note 24)
(Note 24)
Min
133
89
44
89
44
0
32
77
47
15
Max
10000
10000
M5M4V4405C-7,-7S
Min
161
107
57
107
57
0
42
92
57
20
Unit
Max
10000
10000
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note 23: tRWC is specified as tRWC(min )=tRAC(max)+tODD(min)+tRWL(min)+tRP(min)+4tT.
Å@ 24: tWCS, tCWD, tRWD, tAWD, and tCPWD are specified as reference points only. If tWCS≥tWCS(min) the cycle is an early write cycle and the DQ pins will
remain high impedance throughout the entire cycle. IftCWD≥tCWD(min), tRWD≥tRWD(min), tAWD≥tAWD(min) and tCPWD≥tCPWD (min) (for fast page
mode cycle only), the cycle is a read-modify-write cycle and the DQ will contain the data read from the selected address. If neither of the above
condition (delayed write) of the DQ (at access time and until CAS or OE goes back to VIH ) is indeterminate.
6
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Hyper page Mode Cycle
(Read, Early Write, Read-Write, Read-Modify-Write Cycle, Read Write Mix Cycle, Hi-Z control by OE or W)
(Note 25)
Limits
Parameter
Symbol
tHPC
tHPRWC
tDOH
tRAS
tCP
tCPRH
tCPWD
tCHOL
tOEPE
tWPE
tHCWD
tHAWD
tHPWD
tHCOD
tHAOD
tHPOD
Hyper page mode read/write cycle time
Hyper Page Mode read write / read modify write cycle time
Output hold time from CAS low
RAS low pulse width for read or write cycle
CAS high pulse width
RAS hold time after CAS precharge
Delay time, CAS precharge to W low
Hold time to maintain the data Hi-Z until CAS access
OE Pulse Width (Hi-Z control)
W Pulse Width (Hi-Z control)
Delay time, CAS low to W low after read
Delay time, Address to W low after read
Delay time, CAS precharge to W low after read
Delay time, CAS low to OE high after read
Delay time, Address to OE high after read
Delay time, CAS precharge to OE high after read
M5M4V4405C-6,-6S
(Note 26)
(Note 27)
(Note 28)
(Note 24)
Min
25
66
5
Max
77
10
33
50
7
100000
16
M5M4V4405C-7,-7S
Min
30
79
5
92
13
38
60
7
7
7
32
47
50
15
30
33
Unit
Max
100000
16
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7
7
42
57
60
20
35
38
Note 25: All previously specified timing requirements and switching characteristics are applicable to their respective Hyper page mode cycle.
26: tHPC(min) is specified in the case of read-only and early write-only in Hyper page Mode.
27: tRAS(min) is specified as two cycles of CAS input are performed.
28: tCP(max)) is specified as a reference point only.
CAS before RAS Refresh Cycle
(Note 29)
Limits
Parameter
Symbol
tCSR
tCHR
CAS setup time before RAS low
CAS hold time after RAS low
tRSR
tRHP
tCAS
Read setup time before RAS low
Read hold time after RAS low
CAS low pulse width
M5M4V4405C-6,-6S
Min
5
10
10
10
17
Max
M5M4V4405C-7,-7S
Min
5
15
10
15
22
Unit
Max
ns
ns
ns
ns
ns
Note 29: Eight or more CAS before RAS cycles instead of eight RAS cycles are necessary for proper operation of CAS before RAS refresh mode.
Self Refresh Cycle* (Note 30)
Limits
Symbol
tRASS
tRPS
tCHS
tRSR
tRHR
7
Parameter
CBR self refresh RAS low pulse width
CBR self refresh RAS high precharge time
CBR self refresh CAS hold time
Read setup time before RAS low
Read hold time after RAS low
M5M4V4405C-6,-6S
Min
100
110
-50
10
10
Max
M5M4V4405C-7,-7S
Min
100
130
-50
10
15
Unit
Max
µs
ns
ns
ns
ns
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Test Mode Specification (Note 31)
ELECTRICAL CHARACTERISTICS (Ta=0~70˚C, VCC=3.3V±0.3V, VSS=0V, unless otherwise noted) (Note 2)
Symbol
ICC1 (AV)
ICC3 (AV)
ICC4(AV)
ICC6(AV)
Parameter
Average supply current
from VCC
operating
(Note 3,4,5)
Average supply current
from VCC
refreshing
(Note 3,5)
Average supply current
from VCC
Hyper-Page-Mode
(Note 3,4,5)
Average supply current
from VCC
CAS before RAS refresh
(Note 3)
mode
Test conditions
M5M4V4405C-6,-6S
M5M4V4405C-7,-7S
M5M4V4405C-6,-6S
M5M4V4405C-7,-7S
M5M4V4405C-6,-6S
M5M4V4405C-7,-7S
M5M4V4405C-6,-6S
M5M4V4405C-7,-7S
Min
Limits
Typ
Max
RAS, CAS cycling
tRC=tWC=min.
output open
85
RAS cycling, CAS= VIH
tRC=min.
output open
85
RAS=VIL, CAS cycling
tPC=min.
output open
85
Unit
mA
75
mA
75
mA
75
CAS before RAS refresh cycling
tRC=min.
output open
75
mA
65
Note 31: All previously specified electrical characteristics, switing characteristics, and timing requirements are applicable to that of test mode.
SWITCHING CHARACTERISTICS (Ta=0~70˚C, VCC=3.3V±0.3V, VSS=0V, unless otherwise noted, see notes 6,14,15)
Limits
Parameter
Symbol
M5M4V4405C-6,-6S
Min
tCAC
tRAC
tAA
tCPA
tOEA
(Note 7,8)
(Note 7,9)
Access time from CAS
Access time from RAS
Column address access time
Access time from CAS precharge
Access time from OE
M5M4V4405C-7,-7S
Max
20
Min
65
35
38
20
(Note 7,10)
(Note 7,11)
(Note 7)
Max
25
75
40
43
25
Unit
ns
ns
ns
ns
ns
TIMING REQUIREMENTS (Ta=0~70˚C, VCC=3.3V±0.3V, VSS=0V, unless otherwise noted, see notes 14,15)
Read and Refresh Cycles
Limits
Parameter
Symbol
tRC
tRAS
tCAS
tCSH
tRSH
tRAL
tCAL
tORH
tOCH
M5M4V4405C-6,-6S
Min
115
65
Read cycle time
RAS low pulse width
CAS low pulse width
CAS hold time after RAS low
RAS hold time after CAS low
Column address to RAS hold time
Column address to CAS hold time
RAS hold time after OE low
CAS hold time after OE low
15
53
20
35
23
20
20
Max
10000
M5M4V4405C-7,-7S
Min
135
75
10000
18
60
25
40
28
25
25
Unit
Max
10000
10000
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read-Write and Read-Modify-Write Cycles
Limits
Parameter
Symbol
tRWC
tRAS
tCAS
tCSH
tRSH
tCWD
tRWD
tAWD
8
Read write/read modify write cycle time
RAS low pulse width
CAS low pulse width
CAS hold time after RAS low
RAS hold time after CAS low
Delay time, CAS low to W low
Delay time, RAS low to W low
Delay time, address to W low
M5M4V4405C-6,-6S
(Note 23)
(Note 24)
(Note 24)
(Note 24)
Min
138
94
49
94
49
37
82
52
Max
10000
10000
M5M4V4405C-7,-7S
Min
166
112
62
112
62
47
97
62
Unit
Max
10000
10000
ns
ns
ns
ns
ns
ns
ns
ns
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Hyper page Mode Cycle
(Read, Early Write, Read-Write, Read-Modify-Write Cycle, Read Write Mix Cycle, Hi-Z control by OE or W)
(Note 25)
Limits
Parameter
Symbol
tHPC
tHPRWC
tRAS
tCPRH
tCPWD
tHCWD
tHAWD
tHPWD
tHCOD
tHAOD
tHPOD
Hyper page mode read/write cycle time
Hyper Page Mode read write / read modify write cycle time
RAS low pulse width for read or write cycle
RAS hold time after CAS precharge
Delay time, CAS precharge to W low
Delay time, CAS low to W low after read
Delay time, Address to W low after read
Delay time, CAS precharge to W low after read
Delay time, CAS low to OE high after read
Delay time, Address to OE high after read
Delay time, CAS precharge to OE high after read
M5M4V4405C-6,-6S
(Note 26)
(Note 27)
(Note 24)
Min
30
71
82
38
55
37
52
55
20
35
38
Max
100000
M5M4V4405C-7,-7S
Min
35
84
97
43
65
47
62
65
25
40
43
Unit
Max
100000
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Test Mode Set Cycle
Limits
Parameter
Symbol
tWSR
tWHR
9
Write setup time before RAS low
Write hold time after RAS low
M5M4V4405C-6,-6S
Min
10
10
Max
M5M4V4405C-7,-7S
Min
10
15
Unit
Max
ns
ns
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Timing Diagrams
Read Cycle
(Note 32)
tRC
tRAS
RAS
tRP
VIH
VIL
tCSH
tCRP
tRCD
tRSH
tCAS
tCRP
VIH
CAS
VIL
tRAL
tCAL
tRAD
tASR
VIH
A0 ~A9
VIL
tRAH
tASC
ROW
ADDRESS
tASR
tCAH
ROW
ADDRESS
COLUMN
ADDRESS
tRRH
tRCH
tRCS
W
VIH
VIL
tCDD
tDZC
DQ1~DQ4
(INPUTS)
VIH
Hi-Z
VIL
tREZ
tCAC
tAA
tOHR
tCLZ
DQ1~DQ4
(OUTPUTS)
VOH
VOL
Hi-Z
Hi-Z
DATA VALID
tRAC
tDZO
tOEA
tOCH
OE
tWEZ
tOFF
tOHC
tOEZ
tODD
VIH
VIL
tORH
Note 32
Indicates the don't care input.
VIH(min)≤VIN≤VIH(max) or VIL(min)≤VIN≤VIL(max)
Indicates the invalid output.
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Early Write Cycle
tWC
tRAS
RAS
tRP
VIH
VIL
tCSH
tCRP
CAS
tRCD
tRSH
tCAS
tCRP
VIH
VIL
tASR
VIH
A0~A9
VIL
tASC
tRAH
ROW
ADDRESS
COLUMN
ADDRESS
ROW
ADDRESS
tWCS
W
tASR
tCAH
tWCH
VIH
VIL
tDS
DQ1~DQ4
(INPUTS)
DQ1~DQ4
(OUTPUTS)
OE
VIH
tDH
DATA VALID
VIL
VOH
VOL
VIH
VIL
Hi-Z
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Delayed Write Cycle
tWC
tRP
tRAS
RAS
VIH
VIL
tCRP
tCSH
tCRP
tRSH
tRCD
tCAS
CAS
VIH
VIL
tASR
VIH
A0~A9
VIL
tRAH
tASC
tCAH
ROW
ADDRESS
tASR
ROW
ADDRESS
COLUMN
ADDRESS
tCWL
tRWL
tWP
tRCS
W
VIH
VIL
tWCH
tDZC
DQ1~DQ4
(INPUTS)
tDS
VIH
Hi-Z
tDH
DATA
VALID
VIL
tCLZ
DQ1~DQ4
(OUTPUTS)
VOH
Hi-Z
Hi-Z
VOL
tDZO
tOEZ
tODD
VIH
OE
VIL
tOEH
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Read-Write, Read-Modify-Write Cycle
tRWC
tRAS
tRP
VIH
RAS
VIL
tCRP
tCSH
tRCD
tCRP
tRSH
tCAS
VIH
CAS
VIL
tRAD
tASR
VIH
A0~A9
VIL
tRAH
tCAH
tASC
tASR
COLUMN
ADDRESS
ROW
ADDRESS
ROW
ADDRESS
tAWD
tCWD
tRWD
tRCS
tCWL
tRWL
tWP
VIH
W
VIL
tDH
tDS
tDZC
DQ1~DQ4
(INPUTS)
VIH
Hi-Z
VIL
DATA VALID
tCAC
tAA
tCLZ
DQ1~DQ4
(OUTPUTS)
VOH
VOL
Hi-Z
Hi-Z
DATA
VALID
tRAC
tODD
tDZO
tOEH
tOEA
tOEZ
OE
VIH
VIL
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Hyper Page Mode Read Cycle
tRAS
tRP
VIH
RAS
VIL
tCSH
tCRP
tCAS
tRCD
tCP
tHPC
tCAS
tCP
tRSH
tCAS
tASC
tCAH
tASC
VIH
CAS
VIL
tRAD
tASR
VIH
A0~A9
VIL
tRAH
tCAH
tASC
ROW
ADDRESS
COLUMN-1
COLUMN-2
tCPRH
tCAH
ROW
ADDRESS
COLUMN-3
tRAL
tRCS
tCAL
tASR
tCAL
tCAL
tRRH
tRCH
VIH
W
VIL
tWEZ
tDZC
DQ1~DQ4
(INPUTS)
tRDD
tCDD
VIH
Hi-Z
tCAC
tAA
VIL
tDOH
tCLZ
VOH
DQ1~DQ4
(OUTPUTS) VOL
Hi-Z
DATA
VALID-1
tRAC
tDZO
tCAC
tAA
tCAC
tAA
tCPA
tDOH
DATA
VALID-2
tREZ
tOHR
tOFF
tOHC
DATA
VALID-3
tCPA
tOEA
tOCH
tOEZ
VIH
OE
VIL
tODD
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Hyper Page Mode Early Write Cycle
tRAS
tRP
VIH
RAS
VIL
tCSH
tCAS
tRCD
tCRP
tRSH
tCAS
tCP
tHPC
tCAS
tCP
tASC
tCAL
tCAH
tASC
tCRP
VIH
CAS
VIL
tASR
A0~A9
VIH
VIL
tRAH
ROW
ADDRESS
tASC
tCAH
COLUMN-1
tWCS
tWCH
COLUMN-2
tWCS
tWCH
tCAL
tCAH
COLUMN-3
tWCS
tWCH
VIH
W
VIL
tDS
DQ1~DQ4
(INPUTS)
VIH
VIL
VOH
DQ1~DQ4
(OUTPUTS) VOL
OE
VIH
VIL
tDH
DATA
VALID-1
tDS
tDH
DATA
VALID-2
Hi-Z
tDS
tDH
DATA
VALID-3
tASR
ROW
ADDRESS
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Hyper Page Mode Read-Write, Read-Modify-Write Cycle
tRAS
RAS
tRP
VIH
VIL
tRWL
tCSH
tCRP
tRCD
tCRP
tHPRWC
tCAS
tCAS
tCP
VIH
CAS
VIL
tASR
A0~A9
VIH
VIL
tRAD
tRAH
ROW
ADDRESS
tASC
tCAH
tASC
COLUMN-1
tASR
ROW
ADDRESS
COLUMN-2
tAWD
tAWD
tRCS
tCWL
tCAH
tCWL
tCWD
tCWD
tRCS
tWP
tWP
VIH
W
VIL
tCPWD
tRWD
tDZC
DQ1~DQ4
(INPUTS)
VIH
tDS
Hi-Z
VIL
tDH
tDZC
tDS
Hi-Z
DATA
VALID-1
tCAC
tAA
tCLZ
DQ1~DQ4
(OUTPUTS) VOL
tCLZ
Hi-Z
Hi-Z
DATA
VALID-1
tRAC
tDZO
tODD
tOEA
VIH
VIL
Hi-Z
DATA
VALID-2
tCPA
tODD
tDZO
tOEH
tOEZ
OE
DATA
VALID-2
tCAC
tAA
VOH
tDH
tOEZ
tOEA
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Hyper Page Mode Mix Cycle (1)
tRP
tRAS
tRWL
VIH
RAS
VIL
tCRP
tCSH
tCRP
tRCD
tCAS
tHPC
tCAS
tCP
tHPRWC
tCAS
tCP
tCWL
VIH
CAS
VIL
tRAD
tASR
A0~A9
VIH
VIL
tRAH
ROW
ADDRESS
tASC
tCAH
tASC
tASC
COLUMN-2
COLUMN-1
tRCS
tASR
tCAH
ROW
ADDRESS
COLUMN-3
tCPWD
tAWD
tCWD
tWCH
tWCS
tCAL
tCAL
W
tCAH
tWP
VIH
VIL
tDZC
DQ1~DQ4
(INPUTS)
VIH
tDZC
DATA
VALID-2
tCAC
VIL
tDH
tDS
tCAC
tWEZ
tCLZ
Hi-Z
tCLZ
DATA
VALID-3
DATA
VALID-1
tRAC
tDZO
tDH
DATA
VALID-3
tAA
tAA
VOH
DQ1~DQ4
(OUTPUTS) VOL
tDS
tCPA
tOEA
tOCH
tOEZ
tDZO
tOEA
tOEZ
VIH
OE
VIL
tODD
tODD
tOEH
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Hyper Page Mode Mix Cycle (2)
VIH
RAS
VIL
VIH
CAS
VIL
tCP
tASC
A0~A9
tCAS
tCAH
tCAS
tCAH
tASC
tASC
tCAH
VIH
COLUMN-1
COLUMN-2
COLUMN-3
VIL
tRCH
tCAL
tCAL
tWCS
W
tHCWD
VIL
tHAWD
tDH
tDS
tHPWD
DQ1~DQ4
(INPUTS)
VIH
Hi-Z
VIL
tAA
tCPA
tWEZ
tCLZ
VOH
DQ1~DQ4
(OUTPUTS) VOL
DATA
VALID-1
tHCOD
tHAOD
tHPOD
VIL
Hi-Z
tCAC
tCAC
tCPA
VIH
tDZC
DATA
VALID-2
tAA
OE
tWCH
VIH
Hi-Z
DATA
VALID-3
tDZC
tOEZ
tODD
tOEA
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Hyper Page Mode Read Cycle ( Hi-Z control by OE )
tRAS
tRP
VIH
RAS
VIL
tCSH
tRSH
tCAS
tHPC
tCAS
tRCD
tCRP
tCAS
tCP
tCP
tCRP
VIH
CAS
VIL
tRAD
tASR
A0~A9
VIH
VIL
tRAH
tASC
ROW
ADDRESS
tASC
tCAH
COLUMN-1
tCPRH
tCAH
tASC
tCAH
COLUMN-2
tASR
ROW
ADDRESS
COLUMN-3
tRAL
tRRH
tRCS
tRCH
VIH
W
VIL
tWEZ
tDZC
DQ1~DQ4
(INPUTS)
tRDD
tCDD
VIH
Hi-Z
tCAC
tCAC
VIL
tAA
tCLZ
VOH
DQ1~DQ4
(OUTPUTS) VOL
VIH
Hi-Z
DATA
VALID-1
tRAC
tDZO
tOEA
tAA
tCAC
tAA
tDOH
tCLZ
DATA
VALID-1
DATA
VALID-2
DATA
VALID-3
tCPA
tCPA
tOEZ
Hi-Z
tREZ
tOHR
tOFF
tOHC
tCHOL
tOCH
tOEA
tOEZ
tOEZ
OE
VIL
tOEPE
tOEPE
tODD
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Hyper Page Mode Read Cycle ( Hi-Z control by W )
tRAS
tRP
VIH
RAS
VIL
tCSH
tRCD
tCRP
tCAS
tHPC
tCAS
tCP
tRSH
tCAS
tCP
tCRP
VIH
CAS
VIL
tRAD
tASR
A0~A9
VIH
VIL
tRAH
tCAH
tASC
ROW
ADDRESS
COLUMN-1
tASC
tCPRH
tCAH
tASC
tCAH
COLUMN-2
tRCH
tRCS
W
ROW
ADDRESS
COLUMN-3
tRAL
tRCS
tASR
tRRH
tRCH
VIH
VIL
tWEZ
tWPE
tDZC
DQ1~DQ4
(INPUTS)
tRDD
tCDD
VIH
Hi-Z
VIL
VOH
DQ1~DQ4
(OUTPUTS) VOL
tCAC
tCAC
tAA
tAA
tCLZ
tDOH
Hi-Z
DATA
VALID-1
tRAC
tDZO
tCLZ
tWEZ
DATA
VALID-2
tCPA
tOEA
tOCH
tCAC
tAA
Hi-Z
tREZ
tOHR
tOFF
tOHC
DATA
VALID-3
tCPA
tOEZ
VIH
OE
VIL
tODD
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
RAS-only Refresh Cycle
tRC
tRAS
RAS
tRP
VIH
VIL
tRPC
tCRP
tCRP
VIH
CAS
VIL
tASR
A0~A9
VIH
VIL
W
tRAH
tASR
ROW
ADDRESS
ROW
ADDRESS
VIH
VIL
DQ1~DQ4
(INPUTS)
VIH
VIL
VOH
DQ1~DQ4
(OUTPUTS) VOL
OE
VIH
VIL
Hi-Z
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
CAS before RAS Refresh Cycle, Extended Refresh Cycle*
tRC
RAS
tRC
tRAS
tRP
tRP
tRAS
VIH
VIL
tRPC tCSR
CAS
tCHR
tRPC
tCSR
tCRP
tRPC
tCHR
VIH
VIL
tCPN
tASR
A0~A9
VIH
ROW
ADDRESS
VIL
COLUMN
ADDRESS
tRRH
tRCH tRSR
W
tRHR
tRSR
tRCS
tRHR
VIH
VIL
DQ1~DQ4
(INPUTS)
VIH
VIL
tREZ
tOHR
tOFF
tOHC
VOH
DQ1~DQ4
(OUTPUTS) VOL
Hi-Z
tOEZ
OE
VIH
VIL
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Hidden Refresh Cycle (Read)
(Note 33)
tRC
tRAS
tRC
tRP
tRAS
tRP
VIH
RAS
VIL
tCRP
tRCD
tRSH
tCHR
VIH
CAS
VIL
tRAD
tASR
VIH
A0~A9
VIL
tRAH
tASC
tASR
tCAH
COLUMN
ADDRESS
ROW
ADDRESS
tRCS
ROW
ADDRESS
tRRH
tRAL
tRCH
VIH
W
VIL
tCDD
tDZC
tRDD
DQ1~DQ4
(INPUTS)
VIH
Hi-Z
tREZ
VIL
tCAC
tAA
tOHR
tOFF
tCLZ
VOH
DQ1~DQ4
(OUTPUTS) VOL
tOHC
Hi-Z
Hi-Z
DATA VALID
tRAC
tDZO
tOEA
tORH
VIH
OE
VIL
Note 33: Early write, delayed write, read write or read modify write cycle is applicable instead of read cycle.
Timing requirements and output state are the same as that of each cycle shown above.
tOEZ
tODD
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Self Refresh Cycle* (Note 30)
tRP
tRASS
tRPS
VIH
RAS
VIL
tRPC
tCRP
tRPC
tCSR
tCHS
VIH
CAS
VIL
tCPN
tASR
A0~A9
VIH
ROW
ADDRESS
VIL
tRRH
tRCH
W
tRSR
tRHR
tRCS
VIH
VIL
tRDD
tCDD
DQ1~DQ4
(INPUTS)
VIH
Hi-Z
VIL
tREZ
tOHR
tOFF
tOHC
DQ1~DQ4 VOH
(OUTPUTS) VOL
Hi-Z
tOEZ
tODD
VIH
OE
VIL
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Test Mode Set Cycle (Note 34)
tRC
tRP
RAS
tRAS
tRP
VIH
VIL
tRPC
CAS
tCSR
tRPC
tCHR
tCRP
VIH
VIL
tCPN
tASR
VIH
A0~A9
ROW
ADDRESS
VIL
tRCH
tWSR
tWHR
COLUMN
ADDRESS
tRCS
VIH
W
DQ1~DQ4
(INPUTS)
VIL
VIH
VIL
tOFF
DQ1~DQ4 VOH
(OUTPUTS) VOL
Hi-Z
tOEZ
VIH
OE
VIL
Note 34: The cycle is also avaiilable for initialization cycle, but in this case device enters test mode.
The test mode function is initiated with a W and CAS before RAS cycle(WCBR cycle) as specified above timing diagram.
The test mode function is terminated by either a CAS before RAS(CBR) refresh or a RAS only refresh cycle.
During the test mode, the device is internally organized as 4-bits wide (256 kilobytes deep) for each DQ (input / output) port.
No addressing of A0, A1(column only) is required.
During a write cycle, data on the each DQ (input) pin is written in parallel into all 4-bits for each DQ port and can be written
independently for each DQ port.
During a read cycle, the each DQ (output) pin indicates independently a HIGH state if all 4-bits are equal, and a LOW state
if any bits differ.
During the test mode operation, a WCBR cycle is used to perform refresh.
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
Note 30 : Self refresh sequence
Two refreshing methods should be used properly depending on the
low pulse width(tRASS) of RAS signal during self refresh period.
1. Distributed refresh during Read / Write operation
(A) Timing Diagram
Read / Write Cycle
Self Refresh Cycle
tRASS≥100µs
tNSD
Read / Write Cycle
tSND
RAS
first
refresh cycle
last
refresh Cycle
Table 2
Read / Write Cycle
Read / Write
Self Refresh
Self Refresh
Read / Write
CBR distributed
refresh
tNSD≤125µs
tSND≤125µs
RAS only
distributed refresh
tNSD≤16µs
tSND≤16µs
(B) Definition of distributed refresh
tREF
tREF/1024
tREF/1024
RAS
refresh
cycle
read/write
cycles
refresh
cycle
refresh
cycle
read/write
cycles
Definition of CBR distributed refresh
(Including extended refresh)
The CBR distributed refresh performs more than 1024
constant period(125µs max.) CBR cycles within 128 ms.
Definition of RAS only distributed refresh
All combinations of nine row address signals (A0~A9) are
selected during 1024 constant period(16µs max.) RAS only
refresh cycles within 16.4 ms.
Note:
Hidden refresh may be used instead of CBR refresh.
RAS/CAS refresh may be used instead of RAS only refresh.
1.1 CBR distributed refresh
Switching from read/write operation to self refresh operation.
The time interval from the falling edge of RAS signal in the last
CBR refresh cycle during read/write operation period to the
falling edge of RAS signal at the start of self refresh operation
should be set within tNSD (shown in table 2).
Switching from self refresh operation to read/write operation.
The time interval from the rising edge of RAS signal at the end of
self refresh operation to the falling edge of RAS signal in the first
CBR refresh cycle during read/write operation period should be
set within tSND(shown in table 2).
1.2 RAS only distributed refresh
Switching from read/write operation to self refresh operation.
The time interval tNSD from the falling edge of RAS signal in the
last RAS only refresh cycle during read/write operation period to
the falling edge of RAS signal at the start of self refresh operation
should be set within 16µs.
Switching from self refresh operation to read/write operation.
The time interval tSND from the rising edge of RAS signal at the
end of self refresh operation to the falling edge of RAS signal in
the first CBR refresh cycle during read/write operation period
should be set within 16µs.
MITSUBISHI LSIs
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
2. Burst refresh during Read/Write operation
(A) Timing diagram
Read / Write
Self Refresh
tRASS≥100µs
tNSB
Read / Write
tSNB
RAS
first
refresh cycles
refresh cycles
1024 cycles
refresh cycles
1024 cycles
last
refresh Cycles
Table 3
Read / Write Cycle
CBR burst
refresh
Read / Write
Self Refresh
Self Refresh
Read / Write
tNSB≤16.4ms
tSNB≤16.4ms
RAS only
burst refresh
tNSB+tSNB≤16.4ms
(B) Definition of burst refresh
16.4ms
RAS
refresh cycles
1024cycles
read/write cycles
Definition of CBR burst refresh
The CBR burst refresh performs more than 1024
continuous CBR cycles within 16.4 ms.
Definition of RAS only burst refresh
All combination of nine row address signals (A0 ~A9)
are selected during 1024 continuous RAS only refresh
cycles within 16.4 ms.
2.1 CBR burst refresh
Switching from read/write operation to self refresh operation.
The time interval ns from the falling edge of RAS signal in the
first CBR refresh cycle during read/write operation period to the
falling edge of RAS signal at the start of self refresh operation
should be set within 16.4 ms.
Switching from self refresh operation to read/write operation.
The time interval snob from the rising edge of RAS signal at the
end of self refresh operation to the falling edge of RAS signal in
the last CBR refresh cycle during read/write operation period
should be set within 16.4 ms.
2.2 RAS only burst refresh
Switching from read/write operation to self refresh operation.
The time interval from the falling edge of RAS signal in the first
RAS only refresh cycle during read/write operation period to the
falling edge of RAS signal at the start of self refresh operation
should be set within tNSB(Shown in table 3).
Switching from self refresh operation to read/write operation.
The time interval from the rising edge of RAS signal at the end of
self refresh operation to the falling edge of RAS signal in the last
RAS only refresh cycle during read/write operation period should
be set within tSNB(shown in table 3).
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