Rohm BH33NB1WHFWHFV 1ch 150ma cmos ldo regulator Datasheet

CMOS LDO Regulators for Portable Equipments
1ch 150mA
CMOS LDO Regulators
BH□□NB1WHFV series
No.11020EBT04
●Description
The BH□□NB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple
rejection ratio of 80 dB (Typ., 1 kHz). They are ideal for use in high-performance, analog applications and offer improved line
regulation, load regulation, and noise characteristics. Using the ultra-small HVSOF5 package, which features a built-in heat
sink, contributes to space-saving application designs.
●Features
1) High accuracy output voltage: ± 1%
2) High ripple rejection ratio: 80 dB (Typ., 1 kHz)
3) Stable with ceramic capacitors
4) Low bias current: 60 µA
5) Output voltage on/off control
6) Built-in overcurrent and thermal shutdown circuits
7) Ultra-small HVSOF5 power package
●Applications
Battery-driven portable devices, etc.
●Product line
150 mA BH□□NB1WHFV Series
Product name
BH□□NB1WHFV
2.5
2.8
2.85
2.9
3.0
3.1
3.3
√
√
√
√
√
√
√
Package
HVSOF5
Model name: BH□□NB1W□
a
b
Symbol
Description
Output voltage specification
□□
Output voltage (V)
□□
Output voltage (V)
25
2.5 V (Typ.)
30
3.0 V (Typ.)
28
2.8 V (Typ.)
31
3.1 V (Typ.)
2J
2.85 V (Typ.)
33
3.3 V (Typ.)
29
2.9 V (Typ.)
a
b
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© 2011 ROHM Co., Ltd. All rights reserved.
Package HFV: HVSOF5
1/8
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
●Absolute maximum ratings
Parameter
Symbol
Ratings
Unit
Applied power supply voltage
VMAX
−0.3 to +6.0
V
Pd
410 *1
mW
Operating temperature range
Topr
−40 to +85
°C
Storage temperature range
Tstg
−55 to +125
°C
Power dissipation
*1: Reduce by 4.1 mW/C over 25C, when mounted on a glass epoxy PCB (70 mm  70 mm  1.6 mm).
●Recommended operating ranges (not to exceed Pd)
Parameter
Symbol
Ratings
Unit
Power supply voltage
VIN
2.5 to 5.5
V
Output current
IOUT
0 to 150
mA
●Recommended operating conditions
Parameter
Symbol
Ratings
Min.
Typ.
Max.
Unit
Input capacitor
CIN
0.1 *2
—
—
µF
Output capacitor
CO
2.2 *2
—
—
µF
*2
Conditions
The use of ceramic
capacitors is recommended.
The use of ceramic
capacitors is recommended.
Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic.
And also make sure that the capacitor value cannot change as time progresses.
●Electrical characteristics
(Unless otherwise specified, Ta = 25°C, VIN = VOUT + 1.0 V, STBY = 1.5 V, CIN = 0.1 µF, CO = 2.2 µF)
Limits
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max.
Output voltage
VOUT
VOUT0.99
VOUT
VOUT1.01
V
IOUT = 1 mA
Circuit current
IGND
—
60
100
µA
IOUT = 50 mA
Circuit current (STBY)
ISTBY
—
—
1.0
µA
STBY = 0 V
RR
—
80
—
dB
VRR = −20 dBv, fRR = 1 kz,
IOUT = 10 mA
Load response 1
LTV1
—
25
—
mV
IOUT = 1 mA to 30 mA
Load response 2
LTV2
—
25
—
mV
IOUT = 30 mA to 1 mA
Dropout voltage 1
VSAT1
—
80
150
mV
Dropout voltage 2
VSAT2
—
250
450
mV
Line regulation
VDL1
—
1
20
mV
Load regulation 1
VDLO1
—
6
30
mV
IOUT = 1 mA to 100 mA
Load regulation 2
VDLO2
—
9
90
mV
IOUT = 1 mA to 150 mA
Overcurrent protection
limit current
ILMAX
—
250
—
mA
VO = VOUT  0.98
ISHORT
—
50
—
mA
VO = 0 V
RSTB
275
550
1100
kΩ
Ripple rejection ratio
Short current
STBY pull-down resistance
STBY control voltage
ON
VSTBH
1.5
—
VIN
V
OFF
VSTBL
−0.3
—
0.3
V
VIN = 0.98  VOUT,
IOUT = 30 mA
VIN = 0.98  VOUT,
IOUT = 100 mA
VIN = VOUT + 0.5 V to 5.5 V,
IOUT = 50 mA
* This IC is not designed to be radiation-resistant.
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2/8
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
4.0
4.0
3.5
3.5
3.5
3.0
3.0
2.5
2.0
1.5
1.0
2.5
2.0
1.5
1.0
0.5
1
2
3
4
Input Voltage VIN[V]
5
0
Fig.1 Output Voltage vs Input Voltage
(BH25NB1WHFV)
2.0
1.5
1.0
1
2
3
4
Input Volt age VIN[V]
0
5
Fig.2 Output Voltage vs Input Voltage
(BH30NB1WHFV)
70
70
70
50
40
30
20
50
40
30
20
10
10
0
0
0
1
2
3
4
Input Voltage VIN[V]
GND Current IGND[mA]
80
GND Current IGND[mA]
80
60
Fig.4 GND Current vs Input Voltage
(BH25NB1WHFV)
50
40
30
20
0
1
2
3
4
Input Voltage VI N[V]
5
0
Fig.5 GND Current vs Input Voltage
(BH30NB1WHFV)
3.0
3.0
Output Voltage VOUT[V]
1.5
1.0
0.5
Output Voltage VOUT[V]
3.0
Output Voltage VOUT[V]
3.5
2.5
2.0
1.5
1.0
50
100 150 200 250
O ut put Current IOUT[mA]
300
Fig.7 Output Voltage vs Output Current
(BH25NB1WHFV)
1.5
1.0
0.5
0.0
0
50
100 150 200 250
Output Current IO UT [mA]
0
300
Fig.8 Output Voltage vs Output Current
(BH30NB1WHFV)
0. 4
0.4
0.4
Dropout Voltage
0. 1
0. 0
0.3
0.3
0.2
0.2
0.1
0.1
0.0
0.0
0
50
100
Output Current I OUT[mA]
150
Fig.10 Dropout voltage vs Output Current
(BH25NB1WHFV)
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© 2011 ROHM Co., Ltd. All rights reserved.
300
Dropout Voltage VSAT[V]
0.5
VSAT[V]
0.5
0. 2
50
100 150 200 250
Output Current IO UT [mA]
Fig.9 Output Voltage vs Output Current
(BH33NB1WHFV)
0. 5
0. 3
5
2.0
0.0
0
2
3
4
Input Voltage VIN[V]
2.5
0.5
0.0
1
Fig.6 GND Current vs Input Voltage
(BH33NB1WHFV)
3.5
2.0
5
60
3.5
2.5
2
3
4
Input Voltage VIN[V]
10
0
5
1
Fig.3 Output Voltage vs Input Voltage
(BH33NB1WHFV)
80
60
GND Current IGND[mA]
2.5
0.0
0.0
0
3.0
0.5
0.5
0.0
Dropout Voltage VSAT[V]
O ut put Volt age VO UT[V]
4.0
Out put Voltage VOUT[V]
Output Voltage VOUT[V]
●Reference data
0
50
100
Output Current IOUT[mA]
150
0
50
100
O ut put Current IOUT[mA]
150
Fig.11 Dropout voltage vs Output Current Fig.12 Dropout voltage vs Output Current
(BH33NB1WHFV)
(BH30NB1WHFV)
3/8
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
3.40
2.55
2.50
2.45
Output Voltage VOUT[V]
3.10
Output Voltage VOUT[V]
Output Voltage VOUT[V]
2.60
3.05
3.00
2.95
IOUT=1mA
2.40
-25
0
25
50
Temp[℃]
75
3.25
IOUT=1mA
3.20
-50
100
Fig.13 Output Voltage vs Temperature
(BH25NB1WHFV)
-25
0
25
50
Temp[℃]
75
-50
100
Fig.14 Output Voltage vs Temperature
(BH30NB1WHFV)
90
80
80
60
50
40
30
Co=2.2μF
Io=10mA
20
10
100
1k
Ripple Rejection R.R.[dB]
90
80
70
70
60
50
40
30
Co=2.2μF
Io=10mA
20
10 k
100
Frequency f[Hz]
1M
10
100
1k
100
1M
50 mV / div
75
100
50
40
30
Co=2.2μF
Io=10mA
10
100
1k
10 k
100
Frequency f[Hz]
1M
Fig.18 Ripple Rejection
(BH33NB1WHFV)
IOUT = 1 mA → 30 mA
IOUT = 1 mA → 30 mA
VOUT
25
50
Temp[℃]
60
20
Fig.17 Ripple Rejection
(BH30NB1WHFV)
IOUT = 1 mA → 30 mA
50 mV / div
0
70
Frequency f[Hz]
Fig.16 Ripple Rejection
(BH25NB1WHFV)
VOUT
10 k
-25
Fig.15 Output Voltage vs Temperature
(BH33NB1WHFV)
90
Ripple Rejection R.R.[dB]
Ripple Rejection R.R.[dB]
3.30
IOUT=1mA
2.90
-50
3.35
VOUT
50 mV / div
100 µs / div
100 µs / div
100 µs / div
Fig.19 Load Response
(Co = 2.2 µF)
(BH25NB1WHFV)
Fig.20 Load Response
(Co = 2.2 µF)
(BH30NB1WHFV)
1 V / div
STBY
1 V / div
STBY
1 V / div
Co = 1 µF
Co = 10 µF
Co = 10 µF
VOUT
Co = 2.2 µF
VOUT
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100 µs / div
Fig.23 Output Voltage Rise Time
(BH30NB1WHFV)
4/8
1 V / div
Co = 1 µF
VOUT
Co = 2.2 µF
100 µs / div
Fig.22 Output Voltage Rise Time
(BH25NB1WHFV)
1 V / div
STBY
1 V / div
Co = 1 µF
Fig.21 Load Response
(Co = 2.2 µF)
(BH33NB1WHFV)
Co = 10 µF
Co = 2.2 µF
100 µs / div
Fig.24 Output Voltage Rise Time
(BH33NB1WHFV)
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
●Block diagram, recommended circuit diagram, and pin assignment diagram
BH□□NB1WHFV
VIN
VIN
3
VOLTAGE
REFERENCE
Cin
4
STBY
1
STBY
2
3
4
5
GND
VIN
VOUT
N.C.
VOUT
VOUT
Co
OVER CURRENT
PROTECTION
VSTB
Symbol
THERMAL
PROTECTION
2
GND
Pin
No.
N.C.
CONTROL
BLOCK
1
5
Function
Output voltage on/off control
(High: ON, Low: OFF)
Ground
Power supply input
Voltage output
NO CONNECT
Cin    0.1µF
Co    2.2µF
Fig.25
●Power dissipation (Pd)
1. Power dissipation (Pd)
Power dissipation calculations include estimates of power dissipation characteristics and internal IC power consumption,
and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is
exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current
capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is
not exceeded during IC operation.
Calculating the maximum internal IC power consumption (PMAX)
PMAX = (VIN − VOUT)  IOUT (MAX.)
VIN : Input voltage
VOUT : Output voltage
IOUT (MAX): Max. output current
2. Power dissipation/power dissipation reduction (Pd)
HVSOF5
0.6
Board: 70 mm  70 mm  1.6 mm
Material: Glass epoxy PCB
0.4
Pd[W]
410 mW
0.2
0
0
Fig. 26
25
50
75
100
125
Ta[℃]
HVSOF5 Power Dissipation/Power Dissipation Reduction (Example)
*Circuit design should allow a sufficient margin for the temperature range so that PMAX < Pd.
●Input Output capacitors
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so
they should be checked once the IC has been mounted.
Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or
X7R, or better models that offer good temperature and DC bias characteristics and high tolerant voltages.
Typical ceramic capacitor characteristics
100
120
50 V
tolerance
95
80
Capacitanc e rate of change [%]
100
Capac itance rate of change [% ]
Capacitance rate of change [%]
100
120
50 V tolerance
90
60
85
10 V
tolerance
40
16 V tolerance
20
10 V
tolerance
80
16 V tolerance
75
0
70
0
1
2
DC bias Vdc[V]
3
4
Fig.27 Capacitance vs Bias
(Y5V)
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© 2011 ROHM Co., Ltd. All rights reserved.
X7R
X5R
80
Y5V
60
40
20
0
0
1
2
DC bias Vdc[V]
3
Fig.28 Capacitance vs Bias
(X5R, X7R)
5/8
4
- 25
0
25
Temp[℃]
50
75
Fig.29 Capacitance vs Temperature
(X5R, X7R, Y5V)
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
●Output capacitors
Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output
pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage
supply source connected to the VCC. The higher value the output capacitor goes, the more stable the whole operation
becomes. This leads to high load transient response. Please confirm the whole operation on actual application board.
Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its
value goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking
capacitor makers.
BH□□NB1WHFV
100
COUT = 2.2 µF
Ta = +25°C
ESR[ ]
10
1
Stable region
0.1
0.01
0
50
100
150
Output Current IOUT [mA]
Fig.30 Stable Operation Region (Example)
●Operation Notes
1. Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit.
If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices,
such as fuses.
2.
Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
3.
Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
4.
Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to
shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do
not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is
assumed.
5.
Overcurrent protection circuit
The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This
circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current
flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous operation or transitioning of the
protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics
to temperatures.
6.
Action in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
7.
Ground wiring pattern
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change
the GND wiring pattern of any external components, either.
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6/8
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
8.
GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
9.
Back Current
In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this
current by inserting a bypass diode between the VIN and VOUT pins.
Back current
VIN
STBY
OUT
GND
Fig. 31 Example Bypass Diode Connection
10. Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to
stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting
it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an
antistatic measure. Use similar precaution when transporting or storing the IC.
11. Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Transistor (NPN)
Resistor
Pin A
Pin B
C
Pin B
B
E
Pin A
N
P
+
N
P
P
N
+
N
Parasitic
element
P+
P substrate
Parasitic element
GND
B
N
P
P
C
+
N
E
Parasitic
element
P substrate
Parasitic element
GND
GND
GND
Other adjacent elements
Fig.32 Example of IC structure
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7/8
2011.01 - Rev.B
Technical Note
BH□□NB1WHFV series
●Ordering part number
B
H
2
Part No.
5
N
Output voltage
25:2.5 V
28:2.8 V
2J:2.85 V
29:2.9 V
30:3.0 V
31:3.1 V
33:3.3 V
B
1
W
Series
NB1 : High ripple
rejection
H
Shutdown
switch
W : Includes
switch
F
V
-
Package
HFV : HVSOF5
T
R
Packaging and forming specification
TR: Embossed tape and reel
HVSOF5
Embossed carrier tape
(0.3)
Quantity
3000pcs
4
(0.91)
4
5
(0.41)
5
0.2MAX
Tape
1.0±0.05
(0.05)
(0.8)
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
)
3 2 1
1 2 3
1pin
0.13±0.05
S
+0.03
0.02 –0.02
1.6±0.05
0.6MAX
1.2±0.05
(MAX 1.28 include BURR)
<Tape and Reel information>
1.6±0.05
0.1
S
0.5
0.22±0.05
0.08
Direction of feed
M
Reel
(Unit : mm)
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8/8
∗ Order quantity needs to be multiple of the minimum quantity.
2011.01 - Rev.B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
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More detail product informations and catalogs are available, please contact us.
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R1120A
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