AP9950AGH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
68V
RDS(ON)
10.5mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
70A
S
Description
AP9950A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
G
D S
TO-252(H)
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
68
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
70
A
ID@TC=100℃
Drain Current, VGS @ 10V
45
A
240
A
92.6
W
2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
3
Value
Units
1.35
℃/W
62.5
℃/W
1
201501163
AP9950AGH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
68
-
-
V
VGS=10V, ID=40A
-
-
10.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
47
-
S
IDSS
Drain-Source Leakage Current
VDS=68V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
58
93
nC
Qgs
Gate-Source Charge
VDS=56V
-
14
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
24
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
19
-
ns
tr
Rise Time
ID=30A
-
65
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
30
-
ns
tf
Fall Time
VGS=10V
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
3300 5280
pF
Coss
Output Capacitance
VDS=25V
-
300
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
185
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
2
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
45
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
85
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9950AGH-HF
240
160
10V
9.0V
o
T C = 25 C
10V
9.0V
8.0V
o
T C = 150 C
ID , Drain Current (A)
ID , Drain Current (A)
200
8.0V
160
7.0V
120
V GS =6.0V
80
120
7.0V
V GS =6.0V
80
40
40
0
0
0
4
8
12
16
20
24
0
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
1.2
I D =40A
V G =10V
I D =1mA
2.0
1
.
Normalized RDS(ON)
Normalized BVDSS
1.1
1.6
1.2
0.9
0.8
0.4
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C)
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
2.0
40
I D =250uA
1.6
o
Normalized VGS(th)
IS(A)
30
o
T j =150 C
T j =25 C
20
1.2
0.8
10
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9950AGH-HF
f=1.0MHz
4000
I D =30A
V DS =56V
10
C iss
3000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
1
80
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
ID (A)
100
100us
10
1ms
o
10ms
100ms
DC
T C =25 C
Single Pulse
1
0.1
1
10
100
.
Normalized Thermal Response (R thjc)
1000
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP9950AGH-HF
MARKING INFORMATION
9950AGH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5