NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV DMG7408SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Features and Benefits RDS(ON) Max ID Max TA = +25°C 23mΩ @ VGS = 10V 7.0A 33mΩ @ VGS = 4.5V 6.0A BVDSS 100% Unclamped Inductive Switch (UIS) Test in Production Low RDS(ON) – Ensures On State Losses Are Minimized Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 30V Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters ® Case: PowerDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) PowerDI3333-8 Pin 1 S S S 1 8 2 7 3 6 4 5 G D D D D Top View Top View Internal Schematic Bottom View Ordering Information (Note 4) Part Number DMG7408SFG-7 DMG7408SFG-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. G78 G78 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) YYWW Marking Information YYWW ADVANCE INFORMATION ADVANCE INFORMATION Product Summary N34 N34 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) PowerDI is a registered trademark of Diodes Incorporated. DMG7408SFG Document number: DS35620 Rev. 6 - 3 1 of 6 www.diodes.com December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV DMG7408SFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C t<10s Continuous Drain Current (Note 5) VGS = 4.5V Steady State t<10s ID Value 30 ±20 7.0 5.5 ID 9.5 7.5 A ID 6.0 5.7 A A 8.0 6.3 66 3.0 9 12 ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) Avalanche Energy (Note 7) Unit V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 6) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) Value 1 131 72 2.1 63 35 7.1 -55 to +150 RJA Total Power Dissipation (Note 5) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RJA RJC TJ, TSTG Unit W °C/W °C/W W °C/W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 - - 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) 1.0 1.45 2.4 V RDS(ON) - 15 25 23 33 mΩ |Yfs| VSD - 11 0.72 1 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 10A VGS = 4.5V, ID = 7.5A VDS = 5V, ID = 10A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF 0.4 - 478.9 96.7 61.4 1.1 5.0 10.5 1.8 1.6 2.9 7.9 14.6 3.1 1.6 8 17 - pF pF pF Ω VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz nC nC nC ns ns ns ns VDS = 15V,ID = 10A VGS = 10V, VDS = 15V, RG = 3Ω, RL = 1.5Ω 5. RJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. UIS in production with L = 0.3mH, TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMG7408SFG Document number: DS35620 Rev. 6 - 3 2 of 6 www.diodes.com December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV DMG7408SFG 20 30 VGS = 10V VDS = 5V 20 )A 15 ( T N E R R U C 10 N IA R D ,D I 5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 4.0V VGS = 3.5V 15 10 5 VGS = 150°C VGS = 125°C VGS = 85°C VGS = 3.0V VGS = 25°C VGS = 2.5V VGS = -55°C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0 5 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N 0.04 VGS = 3.5V 0.03 VGS = 4.5V 0.02 VGS = 10V 0.01 O ( S D R 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 1.7 VGS = 4.5V ID = 5A 1.5 VGS = 10V ID = 10A 1.3 1.1 0.9 0.7 0.5 -50 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION ADVANCE INFORMATION 25 -25 0 25 50 75 100 125 150 (°C)) TA, AMBIENT TEMPERATURE (癈 Fig. 5 On-Resistance Variation with Temperature DMG7408SFG Document number: DS35620 Rev. 6 - 3 0.5 1 1.5 2 2.5 3 3.5 VGS , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 0.04 VGS = 10V 0.03 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 0.05 0.04 VGS = 4.5V ID = 5A 0.03 0.02 VGS = 10V ID = 10A 0.01 0 -50 -25 0 25 50 75 100 125 150 (°C)) TA, AMBIENT TEMPERATURE (癈 Fig. 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 18 1.8 IS, SOURCE CURRENT (A) 16 )A ( 14 T N E R 12 R U C 10 E C R 8 U O S 6 ,S I 4 1.6 ID = 1mA 1.4 1.2 ID = 250µA 1.0 T (S G TA = 25°C 0.8 2 V 0.6 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10 1,000 V GS, GATE-SOURCE VOLTAGE (V) f = 1MHz Ciss C, CAPACITANCE (pF) 100 Coss Crss 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 8 4 2 0 30 VDS = 15V ID = 10A 6 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 12 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION ADVANCE INFORMATION 2.0 )V ( E G A T L O V D L O H S E R H T E T A G , )H DMG7408SFG D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 90° 90癈C/W /W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG7408SFG Document number: DS35620 Rev. 6 - 3 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV DMG7408SFG Package Outline Dimensions ADVANCE INFORMATION ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 A3 A1 A Seating Plane D L(4x) D2 1 Pin #1 ID E4 b2(4x) E E3 E2 L1(3x) z(4x) 8 b PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 X3 8 Y2 X2 Y4 X1 Y1 Y3 Y X DMG7408SFG Document number: DS35620 Rev. 6 - 3 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 1 C 5 of 6 www.diodes.com December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN3025SFV DMG7408SFG ADVANCE INFORMATION ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMG7408SFG Document number: DS35620 Rev. 6 - 3 6 of 6 www.diodes.com December 2017 © Diodes Incorporated