Transistors SMD SMD Type Type PNP Transistors MMBT5401 (KMBT5401) SOT-23-3 Unit: mm Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 1 0.55 Pb-Free Packages are Available +0.2 1.6 -0.1 +0.2 2.8 -0.1 High Voltage Transistors 2 +0.02 0.15 -0.02 +0.2 1.1 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base v oltage VCBO -160 V Collector-emitter v oltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -0.6 A Collector Power Dissipation Pc 300 mW TJ, Tstg -55 to +150 Junction and storage temperature Electrical Characteristics Ta = 25 Parameter Symbol Testconditi ons Min Typ Max Unit -160 V -150 V -5 V Collector-base breakdown voltage VCBO IC = -100 Collector-emitter breakdown voltage * VCEO IC =- 1.0 mA, IB = 0 Emitter-base breakdown voltage VEBO IE = -10 Collector cutoff current ICBO VCB =- 120 V, IE = 0 -0.1 A Emitter cutoff current IEBO VEB = -4.0 V, IC = 0 -0.1 A hFE DC current gain * A, IE = 0 A, IC = 0 IC = -1.0 mA, VCE = -5 V 80 IC = -10 mA, VCE = -5 V 100 IC = -50 mA, VCE = -5 V 50 Collector-emitter saturation voltage * VCE(sat) IC = -50 mA, IB = -5.0 mA Base-emitter saturation voltage * VBE(sat) IC = -50 mA, IB = -5.0 mA Transiston frequency * Pulse Test: Pulse Width = 300 fT VCE=-5V,IC=-10mA,f=30MHz 300 -0.5 -1.0 100 V V MHz s, Duty Cycle=2.0%. ■ Classification of hfe(2) Type MMBT5401 MMBT5401-L MMBT5401-H Range 100-300 100-200 200-300 Marking 2L www.kexin.com.cn 1 Transistors SMD SMD Type Type MMBT5401 (KMBT5401) Typical Characteristics Static Characteristic -20 -100uA COMMON EMITTER Ta=25℃ -90uA 200 -60uA -50uA -40uA -6 50 -20uA IB=-10uA -0 -3 -6 VCE -0.6 Ta=100℃ -0.2 -0.0 -0.1 -1 -10 -600 -100 COLLECTOR CURRENT IC Ta=25℃ -0.01 -0.1 -1 (mA) -10 Cob / Cib 100 -600 -100 COLLECTOR CURRENT (mA) IC —— VCB / VEB f=1MHz IE=0 / IC=0 IC (mA) o (pF) Ta=25 C Cib C -10 o Ta=100 C CAPACITANCE COLLECTOR CURRENT IC -0.1 VCE=-5V Ta=25℃ -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 fT -1 -10 REVERSE VOLTAGE —— IC Pc 0.4 fT 250 200 150 100 50 0 Cob 1 -0.5 -1.0 COLLECTOR POWER DISSIPATION Pc (W) 300 10 VBE(V) BASE-EMITTER VOLTAGE (MHz) (mA) Ta=100℃ IC —— V BE -100 VCEsat —— -600 -100 IC β=10 Ta=25℃ -0.4 -10 COLLECTOR CURRENT -1 β=10 -0.8 -1 (V) VBEsat —— IC -1.0 TRANSITION FREQUENCY 0 -9 COLLECTOR-EMITTER VOLTAGE —— V (V) Ta 0.3 0.2 0.1 VCE=-5V o Ta=25 C -0 -5 -10 -15 COLLECTOR CURRENT 2 o Ta=25 C 100 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -0 150 -30uA -4 -2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) hFE -70uA -12 -8 Ta=100 C 250 -80uA -10 VCE=-5V o DC CURRENT GAIN (mA) -14 COLLECTOR CURRENT -16 IC -18 hFE —— IC 300 www.kexin.com.cn -20 IC -25 (mA) -30 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150