Panasonic MA4X174 Switching diodes (silicon planar type) Datasheet

Switching Diodes
MA4X174 (MA174)
Silicon planar type
Unit: mm
2.90+0.20
–0.05
For small power rectification and surge absorption
1.9±0.2
0.16+0.10
–0.06
(0.95) (0.95)
0.5R
2
1
0.40+0.10
–0.05
Rating
Unit
VR
200
V
Repetitive peak reverse voltage
VRRM
250
V
Non-repetitive peak reverse
surge voltage
VRSM
300
V
IO
100
mA
IFRM
225
IFSM
500
Output current
Single
Double
Repetitive peak
forward current
Single
75
Double
Non-repetitive peak Single
forward surge current * Double
10˚
EIAJ: SC-61
1.1+0.3
–0.1
Symbol
Reverse voltage
0.4±0.2
0.60+0.10
–0.05
+0.2
0 to 0.1 1.1–0.1
Parameter
(0.65)
(0.2)
■ Absolute Maximum Ratings Ta = 25°C
2.8+0.2
–0.3
4
5˚
3
• Two isolated elements contained in one package, allowing highdensity mounting
• High breakdown voltage: VR = 200 V
1.50+0.25
–0.05
■ Features
1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1
Mini4-G1 Package
Marking Symbol: M2O
mA
Internal Connection
170
mA
3
4
2
1
375
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note) *: t = 1 s
■ Electrical Characteristics Ta = 25°C ± 3°C
Max
Unit
Forward voltage
Parameter
Symbol
VF
IF = 100 mA
Conditions
Min
Typ
1.3
V
Reverse current
IR
VR = 200 V
1.0
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SKF00046BED
1
MA4X174
IR  V R
102
10
10
1 Ta = 125°C
75°C
25°C
−20°C
10 −1
10 −2
0
0.2
Ta = 125°C
1
75°C
10 −1
25°C
0.4
0.6
0.8
1.0
10 −3
1.2
0
40
IR  T a
10 mA
3 mA
0.4
120
160
200
0
−40
240
10 −2
1.6
1.2
0.8
0.4
0
160
Ambient temperature Ta (°C)
200
0
40
80
120
160
200
Reverse voltage VR (V)
SKF00046BED
120
160
200
IF(surge)  tW
Ta = 25°C
IF(surge)
Forward surge current IF(surge) (A)
10 −1
120
80
103
2.0
1
80
40
f = 1 MHz
Ta = 25°C
VR = 200 V 100 V
10 V
40
0
Ambient temperature Ta (°C)
Ct  VR
Terminal capacitance Ct (pF)
Reverse current IR (µA)
80
2.4
10
2
IF = 100 mA
0.8
Reverse voltage VR (V)
102
0
1.2
10 −2
Forward voltage VF (V)
10 −3
−40
VF  Ta
1.6
Forward voltage VF (V)
102
Reverse current IR (µA)
Forward current IF (mA)
IF  VF
103
240
tW
Non repetitive
102
10
1
10 −1
10 −1
1
Pulse width tW (ms)
10
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Consult our sales staff in advance for information on the following applications:
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
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2003 SEP
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