BWTECH MSF4N60L 600v n-channel mosfet Datasheet

MSF4N60L
600V N-Channel MOSFET
Description
The MSF4N60L is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
•RoHS compliant package
Application (500V-600V)
• Open Framed Power Supply
• Adapter
• STB
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
4.5
A
Drain Current -Continuous (TC=100°C)
2.6
A
IDM
Drain Current Pulsed
18
A
IAR
Avalanche Current
4.0
A
EAS
Single Pulsed Avalanche Energy
48
mJ
EAR
Repetitive Avalanche Energy
3.1
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
ID
Publication Order Number: [MSF4N60L]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60L
600V N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
TL
TPKG
PD
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (TC = 25 °C)
Derating Factor above 25 °C
TSTG
Operating and Storage Temperature Range
TJ
Storage Temperature
Value
Unit
300
°C
260
°C
31
W
0.25
W/°C
-55 to +150
°C
150
°C
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=4A, VDD=50V, L=7mH, VG=10V, Starting TJ=25℃
3. ISD≦4A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃
Thermal Characteristics (Tc=25°C unless otherwise noted)
Symbol
Parameter
Max.
RθJC
Thermal Resistance, Junction-to-Case
2.6
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Static Characteristics
Symbol
Parameter
BVDSS
Drain-Source Breakdown
Voltage
Test Conditions
Min
Typ.
Max.
Units
VGS = 0 V , ID = 250μA
600
--
--
V
--
0.6
--
V/°C
2.0
--
4.0
V
--
--
1
μA
VGS = ±30
--
--
±100
nA
VGS = 10 V,ID = 3.5 A
--
0.9
1.4
Ω
Min
Typ.
Max.
Units
--
1482
--
pF
--
121.7
--
pF
--
14
--
pF
△BVDSS
Breakdown Voltage
/△TJ
Temperature Coefficient
VGS(th)
Gate Threshold Voltage
VDS = VGS,ID = 250μA
Zero Gate Voltage Drain
VDS = 600 V , VGS = 0 V
Current
VDS = 480 V , TC = 125°C
IDSS
IGSS
RDS(ON)
Gate-Body Leakage
Forward
Static Drain-Source
On-Resistance
ID = 250μA, Referenced to 25°C
Dynamic Characteristics
Symbol
Parameter
CISS
Units
Test Conditions
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Publication Order Number: [MSF4N60L]
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
10
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60L
600V N-Channel MOSFET
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
--
10
30
ns
td(on)
Turn-On Time
tr
Turn-On Time
VDS = 300 V, ID = 7 A,
--
40
80
ns
td(off)
Turn-Off Delay Time
RG = 25 Ω , VGS = 10 V
--
40
100
ns
tf
Turn-Off Fall Time
--
50
90
ns
Qg
Total Gate Charge
--
28
37
nC
--
4.7
--
nC
--
11
--
nC
Min
Typ.
Max.
Units
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 300 V,ID = 7 A,
VGS = 10 V
Source-Drain Diode
Symbol
Parameter
Test Conditions
IS
VD = VG = 0
--
--
4.0
ISM
VS = 1.3 V
--
--
16
VSD
IS = 4 A , VGS = 0 V
--
0.85
1.0
V
trr
IF = 7 A , VGS = 0 V
--
350
--
ns
Qrr
diF/dt=100A/μs
--
3.3
--
μC
A
Notes;
1. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
Publication Order Number: [MSF4N60L]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60L
600V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF4N60L]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60L
600V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF4N60L]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60L
600V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
Fig 12. Resistive Switching Test Circuit & Waveforms
Fig 13. Gate Charge Test Circuit & Waveform
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Publication Order Number: [MSF4N60L]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60L
600V N-Channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [MSF4N60L]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N60L
600V N-Channel MOSFET
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Publication Order Number: [MSF4N60L]
© Bruckewell Technology Corporation Rev. A -2014
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